Nirma University,Institute of Technology M. Tech. (VLSI Design) Sem.

I 3EC1104: Semicoductor physics Device & Modelling

Lesson Planning

linearly graded junction • Depletion capacitance. varactor • I-V characteristics. Process variation . switching of bipolar transistor • Heterojunction bipolar transistor • Thyristor & related power devices • Problems Ohmic contact & Schottkey barrier • Ohmic contact • Schottkey barrier Basic Semiconductor Physics (MoS related) • For P-type <100> substrate • For N-type <100> substrate MOS capacitor with different bias C-V curve • Capacitors with Al metal • Capacitor with Poly MOSFET and compound semiconductor FET • P channel MOSFET • N channel MOSFET Recent development in microelectronic device • LDD structure • Sub micron devices Process variation and second order effects . carrier concentration in equilibrium • Carrier drift & carrier diffusion • Generation & recombination process. abrupt junction. minority carrier storage. thermal equilibrium condition. tunneling effect. continuity equation 2 PN junction • Basic fabrication steps. Device Modeling Total Hours [3]` [7] 3 [7] 4 5 [2] 1 1 [5] 6 [5] 10 [5] 11 [5] 12 [6] 47 . diffusion capacitance • Junction breakdown. Overview of semiconductor theory • Energy bands. C-V characteristics. generation-recombination & high injection effects • Charge storage and transient behavior. Second order effects . avalanche multiplication • Heterojunction Bipolar junction & related devices • Transistor action • Static characteristics of bipolar transistor • Frequency response. fermi level • Depletion region.Sr No Topics 1.

M.Zee .Books: 1.Semiconductor physics Device and Modeling by S.

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