You are on page 1of 1

The bipolar junction transistor is the one which amplifies a small change in input current to produce a large change

in output current. Another type of transistor, called a field effect transistor (FET), converts a change in input voltage into a change in output current and thus the gain of an FET is measured by its transconductance, defined as the ratio of change in output current to change in input voltage. To overcome from the "surface states" that blocked electric fields from penetrating into the semiconductor material. Investigating thermally grown silicon-dioxide layers, they found these states could be markedly reduced at the interface between the silicon and its oxide in a sandwich comprising layers of metal (M - gate), oxide (O - insulation), and silicon (S semiconductor) - thus the name MOSFET, popularly known as MOS. The voltage is applied to the input terminal which is called its Gate and the current flowing through the transistor is depending on the electric field produced by the gate voltage. Under the gate electrode an insulating plate has been placed and so the gate current of an FET is approximately zero. Those FETs which uses a thin silicon dioxide as the insulator is known as the Metal Oxide Semiconductor (MOS) transistor or Metal Oxide Semiconductor Field Effect Transistor (MOSFET).