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MOSFET Amplifier Large Signal Analysis

# MOSFET Amplifier Large Signal Analysis

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05/03/2013

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# 6.

002

CIRCUITS AND ELECTRONICS

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MOSFET Amplifier Large Signal Analysis

Review
Amp constructed using dependent source control a a′ port
DS

b output b′ port

Dependent source in a circuit
v

+ –

a +
a′ –

b

i = f (v )
b′

Superposition with dependent sources: one way leave all dependent sources in; solve for one independent source at a time [section 3.5.1 of the text] Next, quick review of amp … Reading: Chapter 7.3–7.7

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Amp review
VS
RL

vO
VCCS

vI

+ –

K 2 iD = (vI − 1) 2 for vI ≥ 1V = 0 otherwise

vO = VS − iD RL K (vI − 1)2 2

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Key device Needed:
v
A B
i = f (v )

voltage controlled current source

C

Let’s look at our old friend, the MOSFET …

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Key device Needed:
Our old friend, the MOSFET … First, we sort of lied. The on-state behavior of the MOSFET is quite a bit more complex than either the ideal switch or the resistor model would have you believe.

D G vGS < VT

D
G S vGS ≥ VT

S

?

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Graphically
iDS v+ DS –

Demo

+ vGS –

egio n

iDS vGS ≥ VT

iDS vGS ≥ VT

iDS

vDS = vGS − VT vGS 1
Saturation region

Trio de r

vGS 2
...

vGS3
vDS

vGS < VT

vDS

vGS < VT

vDS

S MODEL

SR MODEL

vGS < VT Cutoff
region

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Graphically
iDS v+ DS –

+ vGS –

egio n

iDS vGS ≥ VT

iDS vGS ≥ VT

iDS

vDS = vGS − VT vGS 1
Saturation region

Trio de r

vGS 2
...

vGS3
vDS

vGS < VT

vDS

vGS < VT

vDS

S MODEL

SR MODEL

vGS < VT

vDS ≥ vGS − VT
Notice that MOSFET behaves like a current source

when

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MOSFET SCS Model
When

vDS ≥ vGS − VT

the MOSFET is in its saturation region, and the switch current source (SCS) model of the MOSFET is more accurate than the S or SR model

D G vGS < VT D G S vGS G ≥ VT S D iDS = f (vGS ) K 2 = (vGS − VT ) 2 S
when

vDS ≥ vGS − VT

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Reconciling the models…
egio n

iDS vGS ≥ VT

iDS vGS ≥ VT

iDS

vDS = vGS − VT vGS 1
Saturation region

Trio de r

vGS 2
...

vGS3
v DS

vGS < VT

vDS

vGS < VT

vDS

vGS < VT
SCS MODEL for analog designs

S MODEL for fun!

SR MODEL for digital designs

When to use each model in 6.002?
Note: alternatively (in more advanced courses)

vDS ≥ vGS − VT vDS < vGS − VT

use SCS model use SR model

or, use SU Model (Section 7.8 of A&L)

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Back to Amplifier
VS
vI

AMP

vO

VS
RL vI

G

D S

vO K 2 iDS = (vI − VT ) 2 in saturation region

To ensure the MOSFET operates as a VCCS, we must operate it in its saturation region only. To do so, we promise to adhere to the “saturation discipline”

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MOSFET Amplifier
VS
RL vI

G

D S

vO K 2 iDS = (vI − VT ) 2 in saturation region

To ensure the MOSFET operates as a VCCS, we must operate it in its saturation region only. We promise to adhere to the “saturation discipline.” In other words, we will operate the amp circuit such that vGS ≥ VT and vDS ≥ vGS – VT vO ≥ vI – vT at all times.

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Let’s analyze the circuit
First, replace the MOSFET with its SCS model.

VS
RL

vO G D iDS
+ vI –

K 2 = (vI − VT ) 2

A

vGS = vI

+ –

S

for vO ≥ v I − VT

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Let’s analyze the circuit
VS
RL

vO G D iDS
+ vI –

K 2 = (vI − VT ) 2

A

vGS = vI

+ –

S

for vO ≥ v I − VT
(vO = vDS in our example)

1

Analytical method: vO vs vI vO = VS − iDS RL B K 2 or vO = VS − (vI − VT ) RL for vI ≥ VT 2 vO ≥ vI − VT

vO = VS

v I < VT (MOSFET turns off)
for

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Graphical method vO vs vI K 2 From A : iDS = (vI − VT ) , 2 vO ≥ vI − VT 2
for

⇓ 2iDS vO ≥ K ⇓ K 2 iDS ≤ vO 2

B : iDS

=

VS v0 − RL RL

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2

Graphical method vO vs vI K 2 K 2 for iDS ≤ vO A : iDS = (vI − VT ) , 2 2 VS vO − B : iDS = RL RL iDS

VS RL B

iDS

K 2 ≤ vO 2 A
vI = vGS

li n e

VS Constraints A and B

vO

must be met

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2

Graphical method vO vs vI

iDS VS RL B I DS iDS ≤ K 2 vO 2 A
vI

VI vO

VO

VS

Constraints A and B must be met. Then, given VI, we can find VO, IDS .

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Large Signal Analysis
of Amplifier (under “saturation discipline”)
1 2 vO versus vI Valid input operating range and valid output operating range

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Large Signal Analysis
1 vO versus vI vO VS VS − K 2 vI − VT ) RL ( 2

VT

vO = vI − VT gets into triode region vI

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Large Signal Analysis
What are valid operating ranges under the saturation discipline? vI ≥ VT Our K 2 iDS ≤ vO Constraints vO ≥ v I − VT 2 2 iDS VS RL iDS ≤ K 2 vO 2

K 2 iDS = (vI − VT ) 2 vI VS vO iDS = − RL R L vO

VS

?

vI = VT vO = VS and iDS = 0

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2

Large Signal Analysis
iDS iDS K 2 ≤ vO 2

What are valid operating ranges under the saturation discipline?

iDS =

K (vI − VT )2 2 vI VS vO iDS = − RL R L vO

− 1 + 1 + 2 KRLVS vI = VT + KRL
vO = − 1 + 1 + 2 KRLVS KRL VS vO = − RL RL

vI = VT vO = VS and iDS = 0

iDS

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Large Signal Analysis Summary
1 vO versus vI K 2 vO = VS − (vI − VT ) RL 2 2 Valid operating ranges under the saturation discipline? Valid input range: vI : VT to − 1 + 1 + 2 KRLVS VT + KRL

corresponding output range: vO : VS to − 1 + 1 + 2 KRLVS KRL

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