Philips Semiconductors

Product specification

Thyristors logic level
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

BT169 series

QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT169 Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX MAX MAX MAX UNIT . . . . B 200 0.5 0.8 8 D 400 0.5 0.8 8 E 500 0.5 0.8 8 G 600 0.5 0.8 8 A A V A

PINNING - TO92 variant
PIN 1 2 3 DESCRIPTION anode gate cathode

PIN CONFIGURATION

SYMBOL

a

k

3 2 1

g

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tlead ≤ 83 ˚C all conduction angles t = 10 ms t = 8.3 ms half sine wave; Tj = 25 ˚C prior to surge t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs -40 B 2001 MAX. D 4001 0.5 0.8 8 9 0.32 50 1 5 5 2 0.1 150 125 E 5001 G 6001 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C

VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current

I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 2001 1 Rev 1.500

05 MAX. exponential waveform. 60 - UNIT K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT IL IH VT VGT ID. IGT = 0. ITM = 1. UNIT V/µs µs µs September 2001 2 Rev 1. VR = 35 V. IT = 10 mA. IG = 10 mA. IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V. RGK = 1 kΩ MIN. 500 TYP. RGK = 1 kΩ IT = 1 A VD = 12 V.6 A. 150 MAX.2 TYP. dITM/dt = 30 A/µs. Tj = 125 ˚C. 50 2 2 1.35 0.3 0. gate open circuit VD = VDRM(max). RGK = 1 kΩ ITM = 2 A.1 UNIT µA mA mA V V V mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt tq PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max). IGT = 0. - BT169 series TYP. IT = 10 mA. lead length = 4mm CONDITIONS MIN. IT = 10 mA.5 mA. Tj = 125 ˚C. gate open circuit VD = 12 V. Tj = 125 ˚C.Philips Semiconductors Product specification Thyristors logic level THERMAL RESISTANCES SYMBOL Rth j-lead Rth j-a PARAMETER Thermal resistance junction to lead Thermal resistance junction to ambient pcb mounted. dVD/dt = 2 V/µs. 0. VD = VDRM(max). dIG/dt = 0.500 . 200 6 5 1.1 A/µs VD = 67% VDRM(max).8 0. RGK = 1 kΩ MIN.2 0. 800 2 100 MAX.5 mA. gate open circuit VD = VDRM(max). Tj = 125 ˚C.5 0. VR = VRRM(max). RGK = 1 kΩ VD = 12 V.

2 2.4 1. Tlead ≤ 83˚C. 1000 2 IT(RMS) / A 1.8 0.5 100 1 10 IT T I TSM 0.500 .6 0. Maximum permissible non-repetitive peak on-state current ITSM.4 0. IT(AV).3 0.1 0. versus junction temperature Tj.8 1. versus pulse width tp. Ptot.2 120 1. for sinusoidal currents.6.01 0. versus number of cycles.2 1 0.57 83 1. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C).2 0.5 time Tj initial = 25 C max 1 10us 100us T/s 1ms 10ms 0 0.1.2 0.6 0 50 Tlead / C 100 150 0 -50 0. f = 50 Hz. for sinusoidal currents. versus average on-state current. ITSM / A Fig. September 2001 3 Rev 1. Tlead. Fig.5 0.1 surge duration / s 1 10 Fig.8 0.5 0.3 0.8 90 2.3.6 125 0. for sinusoidal currents.4 IF(AV) / A 0. tp ≤ 10ms.4.8 89 95 101 107 113 10 ITSM / A IT I TSM 8 time T Tj initial = 25 C max 6 4 4 2 119 0 0. Maximum on-state dissipation.1 0 Ptot / W conduction form angle factor degrees a 30 4 60 2.2 0. Maximum permissible repetitive rms on-state current IT(RMS).4 0.57 Tc(max) / C 77 a = 1. versus lead temperature.9 2.9 180 1.6 0.7 0 1 10 100 Number of half cycles at 50Hz 1000 Fig.2. versus surge duration.7 0. IT(RMS) / A Fig. Maximum permissible rms current IT(RMS) .Philips Semiconductors Product specification Thyristors logic level BT169 series 0. where a = form factor = IT(RMS)/ IT(AV). f = 50 Hz.4 -50 0 50 Tj / C 100 150 Fig. VGT(Tj) VGT(25 C) 1 1. Maximum permissible non-repetitive peak on-state current ITSM.6 83 C 0.5.

dVD/dt versus junction temperature Tj. Typical and maximum on-state characteristic.10. Normalised gate trigger current IGT(Tj)/ IGT(25˚C). versus pulse width tp. IH(Tj) IH(25 C) Fig. versus junction temperature Tj.8.5 1 0.5 1 VT / V 1. versus junction temperature Tj.5 2 2.1 t 0 50 Tj / C 100 150 10s Fig. Transient thermal impedance Zth j-lead. dVD/dt (V/us) 10000 3 2.5 0 -50 10 0 50 100 150 100 0 50 Tj / C 100 150 Tj / C Fig. critical rate of rise of off-state voltage.1s 1s P D tp 0.5 1 0.067 V Rs = 0.7. Fig.5 0 -50 0 0 0.11.5 RGK = 1 kohms 1000 2 1.5 0 -50 0. Normalised latching current IL(Tj)/ IL(25˚C).500 .1ms 1ms 10ms tp / s 0. September 2001 4 Rev 1.5 IGT(Tj) IGT(25 C) 5 IT / A Tj = 125 C Tj = 25 C 4 Vo = 1.187 ohms typ max 3 2 1 1 0.5 2 1. RGK = 1 kΩ. Typical.5 2 10 1 1.5 0 50 Tj / C 100 150 Fig. versus junction temperature Tj. Normalised holding current IH(Tj)/ IH(25˚C).Philips Semiconductors Product specification Thyristors logic level BT169 series 3 2. RGK = 1 kΩ.12. 100 Zth j-lead (K/W) 3 2. IL(Tj) IL(25 C) Fig.9.01 10us 0.

Epoxy meets UL94 V0 at 1/8".7 1.66 0.40 D 4. TO92 . Net Mass: 0.8 4.48 0. September 2001 5 Rev 1.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.56 c 0.6 e 2.Philips Semiconductors Product specification Thyristors logic level MECHANICAL DATA Plastic single-ended leaded (through hole) package.2 5.500 .4 E 4.13. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.0 b 0.7 L1(1) 2.45 0.5 Note 1.2 3. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig.40 b1 0.4 d 1. plastic envelope.27 L 14. 3 leads BT169 series SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.54 e1 1.5 12.2 g Notes 1.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. it is believed to be accurate and reliable and may be changed without notice. 2001 All rights are reserved. Philips Semiconductors reserves the right to change the specification without notice. manufacturing and supply.Philips Semiconductors Product specification Thyristors logic level BT169 series DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS2 Objective data PRODUCT STATUS3 Development DEFINITIONS This data sheet contains data from the objective specification for product development. No liability will be accepted by the publisher for any consequence of its use. Application information Where application information is given. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Preliminary data Qualification Product data Production Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). 2 Please consult the most recently issued datasheet before initiating or completing a design. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. in ordere to improve the design and supply the best possible product This data sheet contains data from the product specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.500 .semiconductors.  Philips Electronics N. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. devices or systems where malfunction of these products can be reasonably expected to result in personal injury.philips. September 2001 6 Rev 1. Exposure to limiting values for extended periods may affect device reliability. Philips Semiconductors reserves the right to make changes at any time in order to improve the design. it is advisory and does not form part of the specification.V. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. The latest information is available on the Internet at URL http://www. The information presented in this document does not form part of any quotation or contract.com. Stress above one or more of the limiting values may cause permanent damage to the device.

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