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(Chemical Mechanical

Polishing, CMP)CMP

CMP

CMP(

CuWTiCe

)CMP

1525%

()

CMP

200626,000

CMP

CMP

CMP

CMP

pH

CMP

CMP(metal)

(Membrane Separation)

(oxide)CMP

C M P

(metal CMP slurry)

(MicrofiltrationMF)(Ultrafiltration

CMP(oxide CMP slurry)

UF)(Ceramic filtration)

13

100~2,000nmAl 2O 3

(coagulant)(flocculants)

pH4

110nm SiO2(dispersing agent)

10

30%pH10

(1)

(Repulsive potential)

(Van der Waal's force)

(compression of the electrical

(Electrostatic poten-

double layer)(adsorption)(charge

tial)

neutralization)(precipitate enmesh-

ment)(bridging)

(zeta potential)

(Energy barrier)(
2)

(Coagulation)

(Flocculation)
1

14

94220

2050m

()(aluminum sul-

5mV

fate)(polyaluminum chloride,

PACl)(ferric chloride)

()(poly-

acrylamide)(polyacrylic acid)

(polyethylene imine)

()(chi-

tosan)(algin)

pHORP

acrylamide

( carcinogen )(neurotox-

ic)

pH

Bio R&Ds Co., Ltd.

OCETABIOFLOC

CMP

BIO-FLOCK

pH

(chitosan)

(sodium aglinate)

CMP

1CMP

Rhodococcus erythropolis S-1Nocardia amarae

PAC

YK1Alcaligenes latus B-

PAC

1PACCMP

PAC

10PAC(ml/L)

(mv)

(s/cm)

-17.6

139

11.25

-13.6

PAC1

11.5

-11

11.55

1.2

12.5

7.9

20

23.2

11.55ml10PAC

15

18Alcaligenes cupidus
KT201Bacillus sp. DP152
Arathrobacter

sp.

Aarcuadendron sp.TS-4

CMP

3CMP

pH

COD(T)(mg/L)

(s/cm )

7.32

250

CMP

CMP

7.40

45

6.45

130

CMP

9,0002006

20029.3/

TFT-LCD6/2006

100s/cm

16.5/TFT-LCD22.8

CMP

(Semiconductor

Industry AssociationSIA)1998

199730

250s/cm

gal/in2Silicon5gal/in2Silicon

/3CMP

CMP

CMP

CMP

(2)

2002
16

94220

(221)169101
TEL02-2695-6933FAX02-2695-8463
www.dcb.org.tw