IRF3205

HEXFET
®
Power MOSFET
01/25/01
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.75
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
www.irf.com 1
V
DSS
= 55V
R
DS(on)
= 8.0mΩ
I
D
= 110A
¨
S
D
G
TO-220AB
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
¤ Advanced Process Technology
¤ Ultra Low On-Resistance
¤ Dynamic dv/dt Rating
¤ 175°C Operating Temperature
¤ Fast Switching
¤ Fully Avalanche Rated
Description
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 110 ¨
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 80 A
I
DM
Pulsed Drain Current C 390
P
D
@T
C
= 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
I
AR
Avalanche CurrentC 62 A
E
AR
Repetitive Avalanche EnergyC 20 mJ
dv/dt Peak Diode Recovery dv/dt C 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
PD-91279E
IRF3205
2 www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)C
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 62A, V
GS
= 0V C
t
rr
Reverse Recovery Time ––– 69 104 ns T
J
= 25°C, I
F
= 62A
Q
rr
Reverse Recovery Charge ––– 143 215 nC di/dt = 100A/µs

C
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
110
390
A
C Starting T
J
= 25°C, L = 138µH
R
G
= 25Ω, I
AS
= 62A. (See Figure 12)
C Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
C I
SD
≤ 62A, di/dt ≤ 207A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
C Pulse width ≤ 400µs; duty cycle ≤ 2%.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
¨ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 8.0 mΩ V
GS
= 10V, I
D
= 62A C
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 44 ––– ––– S V
DS
= 25V, I
D
= 62AC
––– ––– 25
µA
V
DS
= 55V, V
GS
= 0V
––– ––– 250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 146 I
D
= 62A
Q
gs
Gate-to-Source Charge ––– ––– 35 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 54 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 14 ––– V
DD
= 28V
t
r
Rise Time ––– 101 ––– I
D
= 62A
t
d(off)
Turn-Off Delay Time ––– 50 ––– R
G
= 4.5Ω
t
f
Fall Time ––– 65 ––– V
GS
= 10V, See Fig. 10 C
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 3247 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 781 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 211 ––– pF ƒ = 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche EnergyC ––– 1050© 264C mJ I
AS
= 62A, L = 138µH
nH
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
© This is a typical value at device destruction and represents
operation outside rated limits.
CThis is a calculated value limited to T
J
= 175°C.
IRF3205
www.irf.com 3
Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C J
°

TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I



,


D
r
a
i
n
-
t
o
-
S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C J
°

TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I



,


D
r
a
i
n
-
t
o
-
S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
DS
D
4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R












,

D
r
a
i
n
-
t
o
-
S
o
u
r
c
e

O
n

R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
J
D
S
(
o
n
)
°
V =
I =
GS
D
10V
107A
1
10
100
1000
4 6 8 10 12
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I



,


D
r
a
i
n
-
t
o
-
S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
GS
D
T = 25 C
J
°
T = 175 C
J
°
IRF3205
4 www.irf.com
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
C
,

C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 20 40 60 80 100 120
0
2
4
6
8
10
12
14
16
Q , Total Gate Charge (nC)
V





,

G
a
t
e
-
t
o
-
S
o
u
r
c
e

V
o
l
t
a
g
e

(
V
)
G
G
S
I =
D
62A
V = 11V
DS
V = 27V
DS
V = 44V
DS
1
10
100
1000
10000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C °
°
J
C
V , Drain-to-Source Voltage (V)
I



,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
I



,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
DS
D
10us
100us
1ms
10ms
0.1
1
10
100
1000
0.2 0.8 1.4 2.0 2.6
V ,Source-to-Drain Voltage (V)
I





,

R
e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
SD
S
D
V = 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
IRF3205
www.irf.com 5
R
D
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
R
G
D.U.T.
10V
+
-
25 50 75 100 125 150 175
0
20
40
60
80
100
120
T , Case Temperature ( C)
I



,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
°
C
D
LIMITED BY PACKAGE
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
R
G
D.U.T.
10V
V
DD
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJC C

P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
h
e
r
m
a
l

R
e
s
p
o
n
s
e
(
Z








)
1
t
h
J
C
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF3205
6 www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01Ω t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
100
200
300
400
500
Starting T , Junction Temperature ( C)
E





,

S
i
n
g
l
e

P
u
l
s
e

A
v
a
l
a
n
c
h
e

E
n
e
r
g
y

(
m
J
)
J
A
S
°

I
D
TOP
BOTTOM
25A
44A
62A
IRF3205
www.irf.com 7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+ -
-
-
Fig 14. For N-Channel HEXFETS
* V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
C
C
C
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
C
*
IRF3205
8 www.irf.com
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 ( .185)
4.20 ( .165)
3X
0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 ( .149)
3.54 ( .139)
- A -
10.54 (.415)
10.29 (.405)
2.87 ( .113)
2.62 ( .103)
15.24 ( .600)
14.84 ( .584)
14.09 ( .555)
13.47 ( .530)
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Part Marking Information
TO-220AB
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
PART NUMBER
I NTERNATIONAL
RECTIFIER
LOGO
EXAMPLE : THI S IS AN IRF1010
WI TH ASSEMBLY
LOT CODE 9B1M
ASSEMBLY
LOT CODE
DATE CODE
(YYWW )
YY = YEAR
W W = W EEK
9246
IRF1010
9B 1M
A
Data and specifications subject to change without notice.
This product has been designed and qualified for the automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/01

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