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# Formulas

Constantes físicas

Semiconductores (T = 300 K)
Silicio
NC = 2.8 · 1019 cm−3
NV = 1.04 · 1019 cm−3
ni = 1.45 · 1010 cm−3
Eg = 1.12eV 
= 11.90
χ = 4.05eV
2
µn = 1350 cm
V ·s
2
µp = 480 cm
V ·s
m?n = 1.08m0
m?p = 0.56m0

e = 1.6 · 10−19 C
m0 = 9.1 · 10−31 Kg
c = 2.998 · 108 m/s 
0 = 8.854 · 10−12 F/m
µ0 = 4π · 10−7 Tm/A
kB = 1.38 · 10−23 J/o K
h = 6.6 · 10−34 Js

n0 = NC e−
NC = 2 

Ec −EF
kT

p0 = NV e− 

3/2

2πm?n kT
h2
E −E
− F ikT F

NV = 2

Arseniuro de Galio
NC = 4.7 · 1017 cm−3
NV = 7.0 · 1018 cm−3
ni = 1.39 · 106 cm−3
Eg = 1.42eV 
= 13.10
χ = 4.07eV
2
µn = 8500 cm
V ·s
2
µp = 400 cm
V ·s
m?n = 0.067m0
m?p = 0.48m0

Transporte en semiconductores

EF −Ev
kT

Dn = µn kT
e
Jn = eDn dn
+ eµn nE
dx 

2πm? kT 3/2
p

h2

p0 = ni e−

n0 = ni e

Germanio
NC = 2.8 · 1019 cm−3
NV = 6.0 · 1018 cm−3
ni = 2.4 · 1013 cm−3
Eg = 0.66eV 
= 160
χ = 4.0eV
2
µn = 3600 cm
V ·s
2
µp = 1800 cm
V ·s
m?n = 0.55m0
m?p = 0.37m0

Dp = µp kT
e
dp
Jp = −eDp dx
+ eµp pE

EF −EF i
kT

Excesos en semiconductores

Dn

∂ (δn)
δn
∂ (δn)
∂ 2 (δn)
0
+
µ
E
+
g

=
n
∂x2
∂x
τn0
∂t

Dp

∂ (δp)
δp
∂ (δp)
∂ 2 (δp)
− µp E
+ g0 −
=
2
∂x
∂x
τp0
∂t

Juntura PN

Vbi =

kT
e

Ln = 

ln

NA ND
n2i 

;

W =

q

2s
e

D
(Vbi − V ) NNAA+N
;
ND

Dn τn0

Lp =
iD = eA 

Dn
n
Ln p0

+

1

Dp
p
Lp n0 

h

exp 

vD
Vt 

i

−1

q

Dp τp0