Prepared by: Eng. Hazem W. Marar

and a length about 1 um as shown in the figure below.4 um to the left and 0. Hazem W.48 um and a length of 0. Marar . Draw a diffusion rectangle (DIFF) with a width of 0. Use the ruler to get a poly rectangle of width= 0. The first step is to draw a poly layer.1 um.We will start the inverter by drawing a PMOS. Click on draw a rectangle and choose the poly layer “PO” from the right side pane. Place the diffusion rectangle in the center of the diffusion area. The figure below shows the diffusion area placed.9 um. The second step is to draw a diffusion region. Prepared by: Eng. the diffusion area should be placed 0. that is. Place the diffusion area about in the middle of the poly as seen.4 um to the right of the POLY.

Marar . Add a new N-WELL layer on your design. Prepared by: Eng. Stretch the N-WELL layer as seen below using the “stretch” tool found in the left toolbar.The next step will be placing a PIMP area.14 um taken from every corner as below. Each PMOS transistor should have an N-WELL base layer. Hazem W. Take a 0. Place the area over the diffusion area having a margin area of 0.1 um margin from the bottom line. We will use this area in a couple of steps ahead.

Now add a metal area by choosing M1 from the right panel. The metal contact should be placed at 0. Hazem W. Until now.05 um from the right side of the diffusion and have a width of 0.23 um as seen below. your design should look like this Prepared by: Eng. Marar . Stretch the metal area down.

Marar . Prepared by: Eng. Now place four contacts in the diffusion area as seen below.45 um away from the metal borders. The contact should be at least 0. Hazem W.In the same manner add a new metal area on the left side and stretch it up as follow.

Add a diffusion area inside the NIMP square.Now add a square NIMP area at the edge of the metal that you stretched upwards. And as before. Marar .14 um margin from all the corners to place a diffusion area like this. Align the NIMP area to the PIMP rectangle as seen below. take a 0. Prepared by: Eng. Hazem W.

This contact represents the source of the PMOS. Prepared by: Eng. The contact should be placed as before. Marar . that is at least 0.45 um from the metal borders. Hazem W. You are almost done of designing the layout of your first PMOS.Now place a contact in the diffusion area as seen below. The design until now should look familiar as this one.

The gate of the MOS transistor is the POLY rectangle that we placed first.Now add a metal pin “M1PIN” on the source contact. Now back to the original CMOS inverter circuit. both gates of the NMOS and PMOS transistors Are connected together to form the input of the inverter. for example “AVDD”. Hazem W. The pin should be placed over the contact as seen below. Then press “q” on your keyboard and change the pin’s name to the same name you used for your supply. Thus the POLY of the PMOS will be stretched to meet the POLY of the NMOS and the PMOS drain which is represented by the metal rectangle that we stretched down should be in touch with the NMOS drain as seen from the circuit. As seen from the circuit. Marar . Prepared by: Eng.

Marar .21 um x 0. Add an M1PIN over the contact and rename it to “IN”. This is the inverter’s input signal. Now add a metal rectangle with the same size (0. Hazem W. Prepared by: Eng.Stretch the POLY rectangle and add a place for a contact the will later represent the input pin as seen in the figure below.3 um) and this will represent the base of the input contact. After that add a contact using the same dimensions rules that we used earlier.

The design should look like the one below.The Diffusion area’s width is half that for the PMOS. create the NMOS using the same steps that we used for the PMOS but with the following differences: 1.24 um.After this. After that. Hazem W. start designing the source of the NMOS which will eventually be the contact at which the ground “0 volts” is connected.33 um x 0. Marar . The design should look similar to this. Prepared by: Eng.6 um PIMP rectangle in which we place a 0.6 um x 0.33 um diffusion area. 3. A contact along with an M1PIN called “AVSS” are placed using the same previous scheme.Replacing the PIMP area with a NIMP area using the same margin rules. that is 0. This is achieved by drawing a 0.No N-WELL layer surrounds the NMOS. 2.

The M1PIN need not to be placed over a contact. Marar .Now you have your complete design of your first inverter. Prepared by: Eng. We need to define the output of out inverter. Name the pin as the name you used in your schematic. for example “OUT”. But there is still one step to go. Hazem W. add an M1PIN on the common metal area between the two transistors. To do that.

Your complete layout design for your CMOS inverter. Marar . Hazem W. Prepared by: Eng.Here it is. Verify your connections using the DRC test and then proceed with your simulations.

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