2 Gain and Stability


more devices since it involves constraints on

[WO parameters. Recently. however, a new criterion has been derived that combines rhe K-A parameters into a test invoIving only a single parameter, p. T h e derivation of t h ~ s criteria is suaighlforwa-d. but lengthy. so we refer t reader to the likerawre [€I], and present only the result for uncandiuonal k


Thus, if t i > 1 , h e device is nncondstionalIy stable. In addition, it can be said that larger values of p imply w a t e r stability.


Transistor Stability


The S parameters for ~e HP HHZT- 102 GaAs FET at 2 GHz with a bias volkge Vi, = O are given as f o k w s {ZI, 50 9); =

Determine the stability af this transistor by calculating K and Jb[, plot the md stability circIes.

From ( 1 1.3 1) and (1 1.24) we compute K and 1 A 1 as

We have ]A1 = 0.696 < I , bur K < I , so the device is potentialIy unstable. The centers and radii of the stability circles are given by (1 1.28) and (1 1.29):

11. [he central part of the Smith chart rep~sents stable operating reeion for rs and rL. a& the stable regions fa:.12. Since lSlll *: 1 and (&I < I .Chapter 7 1: Design of Microwave Ampjifiers and Oscillators FIGURE I 1.2.12 Stability circles for Exampls 11. as shown 3 be ~C and in Figur. Equation (1 1. the me unstableregions are darkened.have k e n located on the Smith chm. 0 Design for Maximum Gain (Conjugate Matching) After h e stability of the vansisror h q becn dcmrmked.38) gives fi = 0. d a ~~ 1 1 used to pl~l hput oulput stability rircies. rs and rr.86 for this device. input sectiom:: .

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