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In the reverse bias region we have the transition or
depletion region capacitane (CT), whereas in the forward
bias region we have the diffusion (CD) or storage
The transition capacitance represents the change in
charge stored in the depletion region with respect to a
change in junction voltage.
The increase in the level of reverse bias caused the width
of the depletion region, W to increase. An increase in the
width of the depletion region, W is accompanied by
additional uncovered ions in the space charge or
transition region.
Because positive ions exist on one side of the junction
and negative ions on the other, the transition
capacitance, CT is analogous to a parallel plate capacitor
for which we have

CT=εA/w Farads

A= Junction area
ε= Permittivity of the semiconductor
We must note that w is a function area of the reversed
biased voltage so that transittion capacitance CT is
voltage dependent.
For a step graded junction, the width of the depletion
region, W is inversely proportional to the square root of
the reverse bias voltage.
Under forward biased condition, the value of transittion
capacitance is to small compared to diffusion capacitance
that it is generally neglected . Similarly in a reverse
biased diode, a small amount of carrier diffusion exists,
but this capacitance is negligible when compared to
transition capacatance.

Transition & Diffusion capacitance verse applied bias
for a silicon diode