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upc 4570 ha

upc 4570 ha

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Published by: Akin 바보 on May 20, 2012
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BIPOLAR ANALOG INTEGRATED CIRCUIT

IlPC4570
DUAL ULTRA LOW-NOISE, WIDEBAND, OPERATIONAL AMPLIFIER
DESCRIPTION
The ,uPC4570 is an ultra low-noise, wideband slew-rate, dual operational amplifier. type op-arnps. the slew-rate stable under The gain bandwidth noise is three times better than the conventional products high 4558 and In Input equivalent

FEATURES
• Ultra low noise: en = 4.5 nV/1HZ product: • High slew rate: 7 V/,us • High gain bandwidth • Internal frequency GBW = 15 MHz at 100 kHz compensation

are seven times better than 4558. voltage-follower wideband op-amps. circuit conditi-

spite of fast AC performance, the ,uPC4570 is extremely ons. Supply current is also improved conventional excellent choice for pre-amplifiers in audio,instrumentation,and compared with and active filters circuits.

The ,uPC4570 is an

communication

CONNECTION EQUIVALENT CIRCUIT (1/2 Circuit) (Top View)

DIAGRAM

pPC4570C,4570G2

pPC4570HA

ORDERING INFORMATION
PART NUMBER ,uPC4570C ,uPC4570G2 ,uPC4570HA Please refer to "Quality NEC Corporation PACKAGE 8 PIN PLASTIC DIP (300 mil) 8 PIN PLASTIC SOP (225 mil) 9 PIN SLIM SIP grade on NEC Semiconductor Devices" QUALITY GRADE Standard Standard Standard (Document number IEI-1209) published by

to know the specification

of quality grade on the devices and its recommended

applications.

Document (0.0.

No. IC-1996A No. IC-6652B) 1993 M

Date Published March Printed in Japan

© NEC Corporation 1987

. not to exceed the absolute maximum RECOMMENDED OPERATING CONDITIONS SYMBOL V± MIN.3 to V+ +0. ±16 ±10 50 100 UNIT V mA kQ pF CHARACTERISTIC Supply Output Source Voltage Current Resistance Load (Av = + 1) 10 Rs CL Capacitive 2 . Note 4. Thermal derating factor is -5.-0.3 to V+ +0. Even during the transition period of supply voltage. Even during the transition Swing of electrical characteristics.0 mV / °C when ambient temperature Note 5.3 V. Note without damage or destructive. power on/off etc.uPC4570 RATINGS (Ta = 25 -ci SYMBOL V+-VVID IlPC4570 -0. The input voltage should be allowed to input without damage or destruction. Note 2. should be kept. The output voltage of normal operation will be the Output Voltage is higher than 55°C. ±4 TYP..3 to +36 ±30 V. This specification this specification is the voltage which should be allowed to supply to the output terminal from external period of supply voltage. is higher than 25°C. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. Note 3. Thermal derating factor is -4. ratings. this specification should be kept. Pay careful attention to the total power dissipation 4 and Note 5. power on/off etc.4 mV / °C when ambient temperature Note 6.-0. Reverse connection of supply voltage can cause destruction.3 350 PT 440 350 10 Topt Tstg -20 to +80 -55 to + 125 UNIT V V V V mW mW mW sec °C °C Differential Input Voltage (Note 2) (Note 3) Input Voltage Output Voltage C Power Dissipation Package VI Vo (Note 4) (Note 5) (Note 4) (Note 6) G2 Package HA Package Output Short Circuit Duration Range Range Operating Storage Temperature Temperature Note 1.NEe ABSOLUTE MAXIMUM PARAMETER Voltage between V+ and V(Note1) . MAX.

s. 2) FLAT + JIS A. Before spec is following. ±0. V" J1 Vr. 3) fa = 10Hz..: v.4 ±12.53 5. ±200 1000 UNIT nA nA CONDITIONS 1.m.s. V.5 4.8 ±14 7 15 7 50 0. dB fa = 1 kHz.0 I. TYP.65 * Input Equivalent Input Equivalent Input Equivalent Input Equivalent Input Equivalent Channel v.CM SR Common Slew Rate Mode Input Voltage Gain Bandwidth Product GBW funity Unity Gain Frequency Phase Margin Total Harmonic Distortion Noise Voltage Noise Voltage Noise Voltage Noise Voltage Noise Voltage Density Density Density !fJunitv THD V" % JlVr.m. 1) RIAA (Fig. nV/{H. 0. V± = ±15 MIN. those spec was applied to the production lots mode after Jun. e" Bn JIVr. pAJ{H. 2) 3 . Rs = 100 Q (Fig.002 0. CHARACTERISTIC Input Offset Current Input Bias Current Input Equivalent (Note7) (Note7) Noise Voltage SYMBOL MIN. Note 8.2 MAX. '87 by the effect of input PNP Tr's hfe rise.5 0. Rs = 100 Q fa = 1 kHz r. Vo = ±10 V Rs ~ 50 Q CONDITIONS SYMBOL Via * * Input Offset Current Input Bias Current Large Signal Supply Common Supply Output Output (Note7) (Note7) Gain "0 18 Au Icc Voltage Current Mode Rejection Voltage Voltage Voltage Rejection Swing Swing Range Ratio Ratio 10= 0 A. Because each currents are base current of PNP-transistor on input stage. Rs = 100 Q RL ~ 10 kQ RL ~ 2 kQ RL ~ 2 kQ. ±5 ±100 400 UNIT mV nA nA V/mV 8 mA dB dB V V V Vips MHz MHz degree RL ~ 2 kQ fa = kHz open loop open loop Va = 3 V r.m. nV/{H. RIAA (Fig.s. For asterisk items. TYP..9 0.7 120 V) MAX. ±10 500 1. Separation f= 20 Hz to 20 kHz Note 7. rn.NEe ELECTRICAL CHARACTERISTICS CHARACTERISTIC Input Offset Voltage IlPC4570 (T a = 25 -c. f = 20 Hz to 20 kHz (Fig. Both Amplifiers CMR SVR v. Input bias currents flow out from IC.s.3 ±10 100 30 300 5 80 80 ±12 ±10 ±12 5 10 100 100 ±13.

s.Vn = 76. Fig.m.5 dB + 40 dB) x Vn :. 3 Noise Measurement Circuit (FLAT + JIS AI 10 kn Vo = 40 dB xVn 100n :.NEe MEASUREMENT CIRCUIT IlPC4570 Fig. 1 Total Harmonic Distortion Measurement Circuit Vo = 3 Vr. 2 Noise Measurement Circuit (RIAAI 2 400 pF 8 200 pF Vo = (36.5 dB Vo Fig.Vn = 4~~B 4 .

Output Current . ±5 V±=±15V <. ·0 r-. -0 I OPEN LOOP FREQUENCY RESPONSE S EO I 0 ". OSINK Vo+ ~ 10 SOURCE > I\.::...8::J I E ::J 10 1\ 1k 10 k 100k o o -> \ > ::. I OJ I 20 V± = ±15 V RL = 10 kQ ".....Supply Voltage . Q_ 0 ~ ro 200 100 ~ 0..Frequency ...°C 100 Ta .V ±20 Ta .i'l m > _j <. ~ r-.mA SUPPLY CURRENT 8 8 V±=±15V SUPPLY CURRENT « EO I +-' 6 « EO I +-' 6 C u ::J (j) 05 ~ 4 C ~ u ::J (j) 05 >Ci I u u 0.. (j) ~ 0 +-' <D OJ > 0 ...Hz LARGE SIGNAL FREQUENCY RESPONSE 30 OUTPUT CURRENT LIMIT ±15 -. 0 300 . V±=±15V I'.... . 0. 2 -'" 2 o -20 o 20 40 60 .. TYP. >Ci I u 4 r - f-- 0.°C 80 0 ±10 V± .Ambient Temperature ~ 10 100 1k 10k 100 k -.9 c <D OJ 100 80 60 40 20 ro "iii (/) 0.... « 0 20 40 60 80 ... c II Q_ f- 0 0 I <D 0.. 4570HA " -. 0 . . 0.. 1\ 1M 10M f .NEe TYPICAL PERFORMANCE CHARACTERISTICS (Ta JIPC4570 = 25 DC. ::.. 4570C.) POWER DISSIPATION 600 120 co 500 400 4570G2 <.. c "co c..:: c > ~ ±10 I <D <..Hz 10 . 0 0 -.Ambient Temperature 5 .Frequency .. 10 M 1M o 20 40 \ 60 80 f .

Frequency ../ 0. V o VV ..1 10 100 I-. 0 <.. o 0 > ~ (J) OJ 0 i'-.. ±20 -10 4 Time ..m.s.I-- .Frequency .oR.Q TOTAL HARMONIC .001 o I t-- 0.01 _L ../ / »-: > I 5 e -0 (J) ~ o e ~ -10 .(J) ~OJ ro » ~e -I (J) 6 4 "50 ---100 1k 10 k 100 k f .uPC4570 COMMON MODE INPUT VOLTAGE RANGE VOLTAGE FOLLOWER PULSE RESPONSE 10 V±=±15V Au= 1 RL = 2 kQ 20 e co 0: !'! (J) OJ 10 ~ +-' ::J D.Supply Voltage .J.1 'c 0 ro I ~ I E 0 0. "5 -5 II o / 2 1\ E o u <.. :> o I :2 <..NEe > I (J) OJ .Source Resistance ./" v / ·5·~ ry(/) we D.. Au= 1 RL= 2 kQ c I 'e 0 t5 i:5 0 0.1s -20 ±10 V± .V INPUT EQUIVALENT 100 NOISE VOLTAGE (FLAT + JISA) V±=±15V (J) INPUT EQUIVALENT NOISE VOLTAGE DENSITY 8 g (J) 10 ~~ +-'> '0 Z (/) > 0....Hz 10 k 100 k 6 .Hz (J» I~ cO 2 1k 10 k 100 k Rs . 0 DISTORTION V"=±15V Va = 3 Vr. "5 D. \ 6 8 V±=±15V Rs = 100 Q <.0001 10 100 1k f . r-.

) 0.27 MAX.020 :.020 MIN.035 MIN. 2) Item "K" to center of leads when formed parallel.400 MAX.:g:gg~ 0. 5.16 MAX. INCHES 0.54 (T.NEe 8PIN PLASTIC DIP (300 mil) 8 5 IlPC4570 K p C D NOTES 1) Each lead centerline is located within 0.o12 0. 0.) 0.P.10 1. 4.50±O. 1. 0.300 (T.055 MIN. 3. 0.050 MAX.2±o.01 0 :.252 0.01 0.51 MIN.9 MIN.:g)g 0.4 MIN.25 mm (0.25:. 0.01 inch) of its true position (T.P.P.25 0.62 (T. D F G H I J K L -- M N P 7 .100 (T.170 MAX.C ITEM A B C MILLIMETERS 10.126±o.31 MAX.:g:gg~ 0.200 MAX. B I$l N CMJI PSC·'OO-300B.3 0.) 6. 7. 0. P.P. 2.) 0.) at maximum material condition.4 0.08 MAX. 0.

27 (T.78 MAX.031 MAX.) INCHES 0.1 0.P.40":g:b~ 0. LL 1 4 .024":g:gg~ 0.3 4..) 0.1 1.P.15":g:6~ 0.016":g:ggj 0.004 0. ITEM A B C MILLIMETERS 5.012 0. 0.12 0.173 0.004±0.2 0.12 mm (0.8 MAX.37 MAX.uPC4570 8 5 detail of lead end o I.071 MAX.256±0.NEe 8 PIN PLASTIC SOP (225 mil) . A H S8GM-50-225B-2 NOTE Each lead centerline is located within 0.006 D E F G 0.) at maximum material condition. 0.4 1 .005 0.6±0.15 H I J K L M N 8 .006":ggg~ 0. 0.5±0.1±0.212 MAX.005 inch) of its true position (T.050 (T. 0. 1.P. 1.059 0.043 0.49 6.

059 MAX. J K M N Q 0. 1.2±o.043 MIN. 0. 5. 2.2 5.1 0.1 0.5 MAX. 0.s 1. 0.o2 0. -- 9 .NEe 9 PIN PLASTIC SLIM SIP IlPC4570 A N I 2: 1 v ~ '-- 9 Irl I lJ ~~ ~~ ~ J ~ ~ ~ J L. 0.2 MAX. 1.86 MAX.25±8:6~ 3. U V y Z O.5±O. 0.02 0. MIN. 0.8±o.75 MAX. I I U o >V - -c F t:EHJ[Jhl [8JJ P9HA-254B NOTE Each lead centerline is located within 0. O.043 MIN.126±o.01 ~.08 MAX.--.11 :!:8:gg~ 0. MAX.25 2.1 MIN. 0.51 MIN.27 MAX.54 1.01 ~8:gg~ 0.) at maximum material condition.1 MIN.P.01 inch) of its true position (T.227 MAX.9 MAX.05 0.02:::8:gg~ -- F G H 0.25 mm (0. ITEM MILLIMETERS INCHES A C 22.

[. process is used. Reflow time: 40 seconds or below (200°C or higher). refer to our document (IEI-1207). Exposure limit*: None Terminal temperature: 300°C or below. Number of reflow process: 1.NEe RECOMMENDED The following different tlPC4570 SOLDERING CONDITIONS conditions (see table below) must be met when soldering this product. Flow time: 10 seconds or below 10 . Number of reflow process: 1. except for "Partial heating method.uPC4570G2] Soldering method Infrared ray reflow Soldering conditions Recommended condition symbol Peak package's surface temperature: 230°C or below. Exposure Iimit*: None Solder temperature: 260°C or below." TYPES OF THROUGH HOLE DEVICE [. Exposure limit*: None IR30-00-1 VPS VP15-00-1 Wave soldering WS15-00-1 Partial heating method *. Flow time: 10 seconds or below Number of flow process: 1. Exposure limit before soldering Storage conditions: after dry-pack package is opened. 25°C and relative humidity Note: Do not apply more than a single process at once. Reflow time: 30 seconds or below (210°C or higher)..uPC4570C. Flow time: 10 seconds or below. Please consult with our sales offices in case other soldering conditions. at 65 % or less.uPC4570HA] Soldering method Wave soldering Soldering conditions Recommended condition symbol Solder temperature: 260°C or below. Exposure limit*: None Peak package's surface temperature: 215°C or below. or in case soldering is done under TYPES OF SURFACE MOUNT DEVICE "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" For more details.

NEe [MEMO] IlPC4570 11 .

uPC4570 No part of this document may be copied or reproduced in any from or by any means without the prior written consent of NEC Corporation. No license. Machine tools. The devices listed in this document are not suitable for use in aerospace equipment. Audio and Visual equipment. etc. copyrights or other intellectual property rights of NEC Corporation or others. Application examples recommended by NEC Corporation. Communication equipment. nuclear reactor control systems and life support systems. please contact our sales people in advance. Special: Automotive and Transportation equipment. Antidisaster systems. Other consumer products. Test and Measurement equipment. Anticrime systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC. etc. Traffic control systems. Office equipment. submarine cables. NEC Corporation does not assume any liability for infringement of patents. is granted under any patents. implied or otherwise. M4 92.NEC Corporation assumes no responsibility for any errors which may appear in this document. copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device.NEe [MEMO] . either express. Standard: Computer. Industrial robots.6 .

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