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  • k161 Nte451

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    Orlando Fernandez
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    Small signal characteristics characteristics characteristics forward transfer admittance input admittance output conductance forward transconductance input capacitance reverse transfer capacitance in output capacitance. - - 7000 1000 60 100 - 5 1 2 Common Source Power Gain seating plane.

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    k161 nte451

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    Small signal characteristics characteristics characteristics forward transfer admittance input admittance output conductance forward transconductance input capacitance reverse transfer capacitance in output capacitance. - - 7000 1000 60 100 - 5 1 2 Common Source Power Gain seating plane.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    33 views2 pages

    k161 Nte451

    Uploaded by

    Orlando Fernandez
    Small signal characteristics characteristics characteristics forward transfer admittance input admittance output conductance forward transconductance input capacitance reverse transfer capacitance in output capacitance. - - 7000 1000 60 100 - 5 1 2 Common Source Power Gain seating plane.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
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    NTE451 Silicon NChannel JFET Transistor VHF/UHF Amplifier

    Absolute Maximum Ratings: DrainGate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Reverse GateSource Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
    Parameter OFF Characteristics GateSource Breakdown Voltage Gate Reverse Current V(BR)GSS IG = 1A, VDS = 0 IGSS VGS(off) IDSS |yfs| Re(yis) |yos| Re(yos) gfs Ciss Crss Coss VGS = 20V, VDS = 0 VGS = 20V, VDS = 0, TA = +100C GateSource Cutoff Voltage ON Characteristics ZeroGateVoltage Drain Current VDS = 15V, VGS = 0 VDS = 15V, VGS = 0, f = 1kHz VDS = 15V, VGS = 0, f = 400MHz VDS = 15V, VGS = 0, f = 1kHz VDS = 15V, VGS = 0, f = 400MHz VDS = 15V, VGS = 0, f = 400MHz VDS = 15V, VGS = 0, f = 1MHz VDS = 15V, VGS = 0, f = 1MHz VDS = 15V, VGS = 0, f = 1MHz 4 20 mA mho mho mho mho mho pF pF pF ID = 10nA, VDS = 15V 25 0.5 1.0 0.2 4.0 V nA nA V Symbol Test Conditions Min Typ Max Unit

    Small Signal Characteristics Characteristics Forward Transfer Admittance Input Admittance Output Admittance Output Conductance Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance 3500 3000 7000 1000 60 100 5 1 2

    Electrical Characteristics Contd): (TA = +25C unless otherwise specified)


    Parameter Functional Characteristics Noise Figure NF VDS = 15V, ID = 4mA, RG  1k VDS = 15V, ID = 4mA f = 100MHz f = 400MHz f = 100MHz f = 400MHz 18 10 2 4 30 20 dB dB dB dB Symbol Test Conditions Min Typ Max Unit

    Common Source Power Gain

    Gps

    .135 (3.45) Min

    .210 (5.33) Max

    Seating Plane

    .500 (12.7) Min

    .021 (.445) Dia Max

    D S G .100 (2.54) .050 (1.27)

    .165 (4.2) Max

    .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

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