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Product S ecific Data Sheet
Ion Sensitive Field-Effect Transistor - ISFET
• MSFET 3310 Si3N4 gate • MSFET 3320 AI203 gate
The ISFET devices are realized with technology compatible
with CMOS processes.
ISFET base devices pH value in a wide acidic solutions
range from basic to
of ion concentra-
tions such as K+, Ca2+ is realized with an additional membrane insulating organic ion-selective on the
photopolymerized gate of the sensor.
Legend: 1. drain 2. source 3. substrate 4. Si02 insulator 5. Si3N4 or AI203 insulator 6. meta 1contacts 7. reference electrode mem-
ISFET encapsulated Circuit Board (PCB)
on a ceramic based Printed
8. ion selective brane
68124.Chip • Sensor base materials pH: pH-sensitive material Sensitivity: • Ami Reference-electrode n iaturized Ag/Ag C Reference 1 chip together with the ISFET. xCM 1%) (3310) • . Ca2+.01 pH 4" (3320) (M) doped Si3N4.DILdimensions . o n S Measured chemical speCies MSFET3310 K+.1 -450 xC 0. The Ag/AgCI electrode is then deposicavity is The by ted on the reversed side of the ISFET Electrode packaged reference tions. is realized together with the as metal a stable device and a silicon-structured containing the ISFET chip acting and providing Integrated potential.1 (90%) %) 20 58-1mV/pK(orunit C process x 50 planar < mV/pH 0. Silicon. Mg2+.3OS lonophores (pins Si3N4-11 1200 10-6sec.s e n S 0 r s pH p e c i f c a t MSFET3320 1 . an KCI Electrolyte. * Patent US 06/7757669. not included) 10-7x . Electrode (IRE)* has been developed which is manufactured on the same .with additional ion selective membrane • Sensor construction 1 4 pH/day 0. gate electrode liquid junction of the IRE is obtained membrane For specific applicaReference a porous silicon manufactu- red on the ISFET front-si de chip.2 (M)0.5mm (or mm polysiloxane 5030AI203 +polysilicon.1 mV/pCa 0.
0 > 0 sr U ~ + <n LW <D iO' 3 Calcium membrane ISFET Slope: 30. Ca2+.5 V towards satura(SCE) and Ag/AgCI (IRE) reference electrode Ids = 100 ~A Potassium membrane <n ISFET .00 -4.s > > 100 300 400 .s c >Nro + . 2. The disposable sensor can be used for single or multiple use in a flow through cell measurement system.3 2:.~ m a::: C 0 QJ Qj :> ~-_. Thanks of these the very good adhesion and stability The ISFET single or multi-sensor chip is mounted. > _ "'" --~-=/ en LU 15 9 <n 1.00 -5.00 -100 a (K) ISFET K+ ion concentration sensitivity ISFET Ca2+ ion concentration sensitivity .""QJ QJ c m cy.0 180 140 100 20.C :> - > 2.500 .900 3 c.7 mV/pH Vds = 1 V Ids = 50 ~A 50. c 0 "'" .00 LOG -2.00 -4.00 -3.0 ISFET pH sensitivity AI203 gate device referenced ted calomel electrode integrated Vds = 1.0 150 30..700 El 2.000 9 2.00 -1."" a pH QJ 2.s > ~ <D 270 210 90. Mg2+ are deposited and structured with a wafer-scale photolithographie technique. o QJ a::: .5000 200 .00 -3.00 LOG a (Ca) -2.600 8 7 6 4 5 3.- .5 1 2 3 4 5 6 7 8 9 10 11 1213 14 pH AI20J gate ISFET pH sensitivity Saturated calomel reference electrode buffer solutions pH 2 ta 11 Siope = 53. 7+/ ~. on a standard DIL package.:.0 mV / pCa -5.800 ..Typical Sensor Character stics K+ ion selective membranes on planar CMOS ISFET Photopolymerised ion-selective membranes DlL packaged ISFET multi-sensor device for flow through measurement Flow through cell measurement tion configura- Highly selective organic membranes for different ion-concentration measurements such as K+. membranes the specifie ion selective FETcan be used for ion-concentration monitoring with a good sensitivity and a linearity within a wide range of concentration down to 10-6 M.
. PCB (Printed as OIL (Oual packages.MICROSENS lm are mounted.ch • Fax: +41 327205744 • email@example.com. 0 rel S ~ c::=::J flcr ---. ISFET encapsulated in a catheter for medical "in vivo" pH monitoring PCB or Kapton based circuits for the packaging of 2 mm diameter catheters. are available. drain current operation of the ISFET Tél.L + Vds substrateVd > Vs ~A = 1. Specifie red with hermetic OIL packaged silicone interface ISFET are manufactuproviding on of a flow encapsulant with the tubing through cell system.0V Ids = 100 ---r-- 1 1 1 1 Vgs> 0 1 L ~ 1 J Electrical connections of ISFET devices Legend: 0: Drain S: Su b : G: Source Su bstrate Reference electrode MICROS ENS SA Rue Jaquet-Droz 1. microencapApplication Circuit ln Line) spesuch as hermetically Board) as standard Packaging • ISFET-chips bounded and sealed in hermetic sulant to be used as sensor devices for different cifie weil sealed applications. CH-ZOO? Neuchâtel/Switzerland Schematic electronic circuit diagram This circuit configuration is used for a constant device.ch . boards are used pH sensors in Dil Packaged ISFET for flow through cel! measurement system. package.:+41327205161 www.