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MICROSENS

Product S ecific Data Sheet

Ion Sensitive Field-Effect Transistor - ISFET


MSFET 3310 Si3N4 gate MSFET 3320 AI203 gate

The ISFET devices are realized with technology compatible

microelectronic

with CMOS processes.

Si3N4

and AI203

insulating

gate the

ISFET base devices pH value in a wide acidic solutions

are measuring

range from basic to

The measurement

of ion concentra-

tions such as K+, Ca2+ is realized with an additional membrane insulating organic ion-selective on the

photopolymerized gate of the sensor.

ISFET principle

ISFET device

Legend: 1. drain 2. source 3. substrate 4. Si02 insulator 5. Si3N4 or AI203 insulator 6. meta 1contacts 7. reference electrode mem-

ISFET encapsulated Circuit Board (PCB)

on a ceramic based Printed

8. ion selective brane

(option)

9. encapsulant

e n S 0 r

s
pH

p e c

c a t
MSFET3320

Measured chemical speCies

MSFET3310

K+, Ca2+, Mg2+,with

additional

ion selective membrane

Sensor construction

1 4 pH/day 0.1 -450 xC 0.68124.5mm (or mm polysiloxane 5030AI203 +polysilicon, not included) 10-7x - 1 (90%) %) 20 58-1mV/pK(orunit C process x 50 planar < mV/pH 0.1 mV/pCa 0.01 pH 4" (3320) (M) doped Si3N4, Silicon,2 (M)0.3OS lonophores (pins Si3N4-11 1200 10-6sec. xCM 1%) (3310)

- DILdimensions .Chip Sensor base materials pH: pH-sensitive material

Sensitivity:

Ami

Reference-electrode
n iaturized Ag/Ag C Reference
1

chip together with the ISFET. The Ag/AgCI electrode is then deposicavity is The by ted on the reversed side of the ISFET

Electrode packaged reference tions,

is realized

together

with the as metal a stable

device and a silicon-structured containing the

ISFET chip acting and providing Integrated potential. an

KCI Electrolyte.

gate electrode

liquid junction

of the IRE is obtained membrane

For specific applicaReference

a porous silicon

manufactu-

red on the ISFET front-si de chip. * Patent US 06/7757669.

Electrode (IRE)* has been developed which is manufactured on the same

Typical

Sensor

Character

stics

K+ ion selective membranes on planar CMOS ISFET


Photopolymerised ion-selective membranes

DlL packaged ISFET multi-sensor device for flow through measurement


Flow through cell measurement tion configura-

Highly selective organic membranes for different ion-concentration measurements such as K+, Ca2+, Mg2+ are deposited and structured with a wafer-scale photolithographie technique. Thanks of these the very good adhesion and stability

The ISFET single or multi-sensor chip is mounted, on a standard DIL package. The disposable sensor can be used for single or multiple use in a flow through cell measurement system.

membranes the specifie ion selective FETcan be used for ion-concentration monitoring with a good sensitivity and a linearity within a wide range of concentration down to 10-6 M.

>
_

"'" --~-=/
en LU

15

<n

1.3

2:.

7+/
~.
o

QJ a::: .""QJ QJ

c m cy..C :>

>

2.900

c."" a
pH

QJ

2.700 El 2.800 , 2.600 8 7 6 4 5 3.000 9 2.500

.s
>

>

100 300 400 ,5000 200 .~

m a::: C 0 QJ Qj :>

~-_.-

.5

1 2 3 4 5 6 7 8 9 10 11 1213 14
pH

AI20J gate ISFET pH sensitivity


Saturated calomel reference electrode buffer solutions pH 2 ta 11 Siope = 53.7 mV/pH Vds = 1 V Ids = 50 ~A
50.0 180 140 100 20.0

ISFET pH sensitivity
AI203 gate device referenced ted calomel electrode integrated Vds = 1.5 V towards satura(SCE) and Ag/AgCI (IRE)

reference electrode Ids = 100 ~A

Potassium membrane
<n

ISFET

..s

c >Nro

+ ;:;

c 0 "'"

.s

> ~
<D

270 210 90.0 150 30.0

>

0 sr U ~ +
<n LW <D iO'

Calcium membrane ISFET Slope: 30.0 mV / pCa

-5.00

-4.00

-3.00
LOG

-2.00

-1.00

-5.00

-4.00

-3.00 LOG a (Ca)

-2.00

-100

(K)

ISFET K+ ion concentration sensitivity

ISFET Ca2+ ion concentration sensitivity

MICROSENS

lm
are mounted, microencapApplication Circuit ln Line) spesuch as hermetically Board) as standard

Packaging
ISFET-chips

bounded and sealed in hermetic

sulant to be used as sensor devices for different cifie weil sealed applications. PCB (Printed as OIL (Oual

packages,

package, are available.

ISFET encapsulated in a catheter for medical "in vivo" pH monitoring


PCB or Kapton based circuits for the packaging of 2 mm diameter catheters. boards are used pH sensors in

Dil Packaged ISFET for flow through cel! measurement system.


Specifie red with hermetic OIL packaged silicone interface ISFET are manufactuproviding on of a flow encapsulant

with the tubing

through cell system.

0
rel S

c::=::J

flcr

---..L + Vds substrateVd > Vs ~A = 1.0V Ids = 100

---r--

1 1 1

Vgs> 0

Electrical connections of ISFET devices


Legend: 0: Drain S: Su b : G: Source Su bstrate Reference electrode
MICROS ENS SA Rue Jaquet-Droz 1. CH-ZOO? Neuchtel/Switzerland

Schematic electronic circuit diagram


This circuit configuration is used for a constant device. drain current operation of the ISFET

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Fax: +41 327205744


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