CGH40006S

CGH40006S
6 W, RF Power GaN HEMT, Plastic

Crees CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package.
Package Type s: 440203 PNs: CGH40 006S
FEATURES
Up to 6 GHz Operation 13 dB Small Signal Gain at 2.0 GHz 11 dB Small Signal Gain at 6.0 GHz 8 W typical at PIN = 32 dBm 65 % Efficiency at PIN = 32 dBm 28 V Operation 3mm x 3mm Package
APPLICATIONS
2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
il 2012 Rev 1.6 Apr
Subject to change without notice. www.cree.com/wireless
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Thermal Resistance, Junction to Case3,4 Case Operating Temperature3,4
Symbol VDSS VGS TSTG TJ IGMAX IDMAX TS RJC TC
Rating 84 -10, +2 -65, +150 175 2.1 0.75 260 10.1 -40, +150
Units Volts Volts C C mA A C C/W C
Conditions 25C 25C
25C 25C
85C 30 seconds
Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp 3 Measured for the CGH40006S at PDISS = 8 W. 4 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. The RTH for Crees demonstration amplifier, CGH40006S-TB, with 13 (20 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is 5.1C. The total Rth from the heat sink to the junction is 10.1C +5.1C = 15.2 C/W.
Electrical Characteristics (TC = 25C)

Characteristics DC Characteristics1 Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current Drain-Source Breakdown Voltage VGS(th) VGS(Q) IDS VBR -3.8 1.7 120 -3.0 -2.7 2.1 -2.3 VDC VDC A VDC VDS = 10 V, ID = 2.1 mA VDS = 28 V, ID = 100 mA VDS = 6.0 V, VGS = 2.0 V VGS = -8 V, ID = 2.1 mA Symbol Min. Typ. Max. Units Conditions
RF Characteristics2 (TC = 25C, F0 = 5.8 GHz unless otherwise noted) Small Signal Gain Power Output at PIN = 30 dBm Drain Efficiency3 Output Mismatch Stress Dynamic Characteristics Input Capacitance Output Capacitance Feedback Capacitance CGS CDS CGD 2.7 0.8 0.1 pF pF pF VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz GSS POUT
10 5 40
11.8 6.9 53
10 : 1
dB W % Y
VDD = 28 V, IDQ = 100 mA VDD = 28 V, IDQ = 100 mA VDD = 28 V, IDQ = 100 mA, PIN = 30 dBm No damage at all phase angles, VDD = 28 V, IDQ = 100 mA, PIN = 32 dBm
VSWR
Notes: 1 Measured on wafer prior to packaging. 2 Measured in Crees narrow band production test fixture AD-000291. This fixture is designed for high volume test at 5.8 GHz and may not show the full capability of the device due to source inductance and thermal performance. The demonstration amplifier, CGH40006STB, is a better indicator of the true RF performance of the device. 3 Drain Efficiency = POUT / PDC
Copyright 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
CGH40006S Rev 1.6
Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless
Typical Performance
16
Small Signal Gain vs Frequency at 28 V S-parameter of the CGH40006S in the CGH40006S-TB
14
12
10
Gain (dB)
CGH40006S - S21
0 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
3.5
4.0
4.5
5.0
5.5
6.0
Input & Output Return Losses vs Frequency at S-parameter 28 V of the CGH40006S in the CGH40006S-TB
0 -2 -4 -6 -8 -10
Gain (dB)
-12 -14 -16 -18 -20 -22 -24 -26 1.0 1.5 2.0 2.5 3.0 CGH40006S - S11 CGH40006S - S22
Frequency (GHz)
3.5
4.0
4.5
5.0
5.5
6.0
CGH40006S Rev 1.6
Typical Performance
Power Gain vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD = 28 V, vs. Pout Gain IDQ = 100 mA
20 18 16 14 12 10 8 6 4 2 0 20 22 24 26 28 30 32 34 36 38 40 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz
Gain (dB)
Output Power (dBm)
Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD =EFF vs output power mA 28 V, IDQ = 100
70% 2.0 GHz 60% 3.0 GHz 4.0 GHz 50% 5.0 GHz 6.0 GHz
Drain Efficiency
40%
30%
20%
10%
0% 20 22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
CGH40006S Rev 1.6
Typical Performance
Power Gain vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD = GainV, input power mA 28 vs IDQ = 100
14
12
10
Gain (dB)
6 2.0 GHz 3.0 GHz 4.0 GHz 2 5.0 GHz 6.0 GHz
0 10 12 14 16 18 20 22 24 26 28 30 32 34
Input Power (dBm)
Drain Efficiency vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD =Drain V, IDQ = 100 mA 28 Efficiency vs. Pin
100% 90% 80% 70% 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz
Drain Efficiency
60% 50% 40% 30% 20% 10% 0%

10 12 14 16 18 20 22 24 26 28 30 32 34
Input Power (dBm)
CGH40006S Rev 1.6
Typical Performance
Power Gain vs Frequency of the CGH40006S in the CGH40006S-TB @ Pin 32 dBm 32 dBm, VDD = 28 V at PIN = Gain
10 9 8 7 6 5 4 3 2 1 0 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) 4.5 5.0 5.5 6.0
Output Power vs Frequency of the CGH40006S in the CGH40006S-TB at PIN = 32 dBm, VDD = 28 V
Power (w) @ Pin 32 dBm
12
Gain (dB)
Output Power (W)
10
0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency (GHz)
Drain Efficiency vs Frequency of the CGH40006S in the CGH40006S-TB at PIN = 32 dBm, VDD = 28 V Drain efficiency @ Pin 32 dBm
70% 60%
50%
Drain Efficiency
40%
30%
20%
10%
0% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency (GHz)
CGH40006S Rev 1.6
Typical Performance
Third Order Intermodulation Distortion vs Average Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDDIM3 28TotalIoutput60 mA = vs V, DQ = power
0
-10
2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz
-20
IM3 (dBc)
-30
-40
-50
-60 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
Output Power (dBm)
Electrostatic Discharge (ESD) Classifications
Parameter Human Body Model Charge Device Model
Symbol HBM CDM
Class 1A (> 250 V) 2 (125 V to 250 V)
Test Methodology JEDEC JESD22 A114-D JEDEC JESD22 C101-C
Moisture Sensitivity Level (MSL) Classification
Parameter Moisture Sensitivity Level
Symbol MSL
Level 3 (168 hours)
Test Methodology IPC/JEDEC J-STD-20
CGH40006S Rev 1.6
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH40006S VDD = 28 V, IDQ = 100 mA
MAG (dB)
Note 1. On a 20 mil thick PCB.
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006S VDD = 28 V, IDQ = 100 mA
Minimum Noise Figure (dB)
Note 1. On a 20 mil thick PCB.
CGH40006S Rev 1.6
Noise Resistance (Ohms)
K Factor
CGH40006S CW Power Dissipation De-rating Curve

Power Dissipation derating Curve vs max Tcase
10 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200
Power Dissipation (W)
Note 1
Maximum Case Temperature (C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Source and Load Impedances

D Z Source G Z Load
Frequency (MHz) 1000 2000 3000 4000 5000 6000
Z Source 12.7 + j20.2 5.98 + j6.81 3.32 - j2.89 2.38 - j9.45 2.62 - j15.6 1.94 - j21.35
Z Load 62.3 + j42 32.7 + j32.9 19.2 + j29.8 15.2 + j15.7 9.98 + j9.6 8.51 + j2.07
Note 1. VDD = 28V, IDQ = 100mA in the 440203 package. Note 2. Optimized for power gain, PSAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. Note 4. 35 pH source inductance is assumed between the package and RF ground (20 mil thick PCB).
CGH40006S Rev 1.6
CGH40006S-TB Demonstration Amplifier Circuit Bill of Materials
Designator R1 R2 R3 C1 C2 C10 C4,C11 C6,C13 C7,C14 C8 C15 C16 J3,J4 J1 Q1
Description RES, AIN, 0505, 470 Ohms (5% tolerance) RES, AIN, 0505, 50 Ohms (5% tolerance) RES, AIN, 0505, 360 Ohms (5% tolerance) CAP, 1.3 pF +/-0.1 pF, 0603, ATC 600S CAP, 2.7 pF +/-0.25 pF, 0603, ATC 600S CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S CAP, 8.2 pF +/-0.25, 0603, ATC 600S CAP, 470 pF +/-5%, 0603, 100 V CAP, 33000 pF, CER, 100V, X7R, 0805 CAP, 10 uf, 16V, SMT, TANTALUM CAP, 1.0 uF +/-10%, CER, 100V, X7R, 1210 CAP, 33 uF, 100V, ELECT, FK, SMD CONN, SMA, STR, PANEL, JACK, RECP HEADER RT>PLZ .1CEN LK 5POS PCB, RO5880, 0.020 THK CGH40006S
Qty 1 1 1 1 1 1 2 2 2 1 1 1 2 1 1 1
CGH40006S-TB Demonstration Amplifier Circuit
10
CGH40006S Rev 1.6
CGH40006S-TB Demonstration Amplifier Circuit Schematic
CGH40006S-TB Demonstration Amplifier Circuit Outline
11
CGH40006S Rev 1.6
Typical Package S-Parameters for CGH40006S (Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees)
Frequency 500 MHz 600 MHz 700 MHz 800 MHz 900 MHz 1.0 GHz 1.1 GHz 1.2 GHz 1.3 GHz 1.4 GHz 1.5 GHz 1.6 GHz 1.7 GHz 1.8 GHz 1.9 GHz 2.0 GHz 2.1 GHz 2.2 GHz 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz 2.8 GHz 2.9 GHz 3.0 GHz 3.2 GHz 3.4 GHz 3.6 GHz 3.8 GHz 4.0 GHz 4.2 GHz 4.4 GHz 4.6 GHz 4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz 5.8 GHz 6.0 GHz Mag S11 0.933 0.922 0.912 0.905 0.899 0.894 0.891 0.888 0.886 0.884 0.883 0.881 0.881 0.880 0.879 0.879 0.879 0.879 0.879 0.879 0.879 0.879 0.879 0.879 0.879 0.880 0.880 0.881 0.882 0.883 0.884 0.885 0.887 0.888 0.889 0.890 0.892 0.893 0.894 0.896 0.897 Ang S11 -92.95 -104.26 -113.77 -121.83 -128.73 -134.72 -139.97 -144.62 -148.78 -152.55 -155.97 -159.12 -162.04 -164.75 -167.29 -169.68 -171.94 -174.09 -176.14 -178.10 -179.98 178.20 176.44 174.74 173.09 171.49 168.39 165.43 162.57 159.81 157.13 154.52 151.96 149.45 146.98 144.55 142.15 139.78 137.43 135.11 132.80 Mag S21 18.74 16.89 15.28 13.90 12.70 11.67 10.77 9.99 9.31 8.71 8.17 7.69 7.26 6.88 6.53 6.21 5.92 5.65 5.40 5.18 4.97 4.77 4.59 4.42 4.26 4.11 3.84 3.60 3.38 3.19 3.01 2.85 2.71 2.57 2.45 2.33 2.23 2.13 2.04 1.95 1.87 Ang S21 125.47 118.64 112.75 107.61 103.06 98.96 95.23 91.80 88.61 85.61 82.77 80.07 77.49 75.00 72.60 70.26 68.00 65.79 63.62 61.51 59.43 57.38 55.37 53.39 51.43 49.50 45.70 41.97 38.31 34.71 31.16 27.65 24.19 20.77 17.38 14.03 10.71 7.41 4.15 0.91 -2.30 Mag S12 0.024 0.026 0.028 0.029 0.030 0.030 0.030 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.030 0.030 0.030 0.030 0.030 0.029 0.029 0.029 0.029 0.028 0.028 0.027 0.026 0.025 0.025 0.024 0.023 0.022 0.022 0.021 0.020 0.019 0.018 0.018 0.017 Ang S12 38.02 31.70 26.33 21.71 17.68 14.11 10.91 8.00 5.34 2.88 0.58 -1.57 -3.60 -5.53 -7.38 -9.14 -10.83 -12.46 -14.03 -15.55 -17.02 -18.44 -19.83 -21.18 -22.48 -23.76 -26.20 -28.51 -30.70 -32.75 -34.68 -36.47 -38.12 -39.63 -40.97 -42.15 -43.15 -43.95 -44.53 -44.89 -45.00 Mag S22 0.459 0.428 0.402 0.381 0.365 0.352 0.342 0.334 0.328 0.325 0.322 0.321 0.321 0.321 0.323 0.325 0.327 0.330 0.334 0.338 0.342 0.346 0.351 0.355 0.360 0.366 0.376 0.387 0.399 0.410 0.422 0.433 0.445 0.457 0.468 0.480 0.491 0.503 0.514 0.525 0.535 Ang S22 -48.87 -54.78 -59.82 -64.21 -68.10 -71.62 -74.86 -77.87 -80.72 -83.43 -86.03 -88.54 -90.98 -93.35 -95.67 -97.94 -100.17 -102.36 -104.51 -106.63 -108.71 -110.77 -112.81 -114.82 -116.80 -118.76 -122.63 -126.41 -130.13 -133.78 -137.38 -140.91 -144.40 -147.84 -151.24 -154.60 -157.92 -161.20 -164.45 -167.66 -170.85
Note 1. Download this s-parameter file in .s2p format at http://www.cree.com/products/wireless_s-parameters.asp Note 2. On a 20 mil thick PCB.
12
CGH40006S Rev 1.6
Product Dimensions CGH40006S (Package Type 440203)
Pin 1 2 3 4 5 6
Input/Output GND RF IN GND GND RF OUT GND
13
CGH40006S Rev 1.6
Tape & Reel Dimensions
14
CGH40006S Rev 1.6
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customers technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/wireless Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, Wireless Devices 1.919.407.7816 Tom Dekker Sales Director Cree, Wireless Devices 1.919.407.5639
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CGH40006S Rev 1.6

CGH40006S

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CGH40006S

6 W, RF Power GaN HEMT, Plastic

Package Type s: 440203 PNs: CGH40 006S

il 2012 Rev 1.6 Apr

Subject to change without notice. www.cree.com/wireless

Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature

Symbol VDSS VGS TSTG TJ IGMAX IDMAX TS RJC TC

Units Volts Volts C C mA A C C/W C

Conditions 25C 25C

Electrical Characteristics (TC = 25C)

CGH40006S Rev 1.6

Small Signal Gain vs Frequency at 28 V S-parameter of the CGH40006S in the CGH40006S-TB

0 1.0 1.5 2.0 2.5 3.0

CGH40006S Rev 1.6

Output Power (dBm)

Output Power (dBm)

CGH40006S Rev 1.6

Input Power (dBm)

60% 50% 40% 30% 20% 10% 0%

Input Power (dBm)

CGH40006S Rev 1.6

0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

0% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

CGH40006S Rev 1.6

Output Power (dBm)

Electrostatic Discharge (ESD) Classifications

Parameter Human Body Model Charge Device Model

Symbol HBM CDM

Class 1A (> 250 V) 2 (125 V to 250 V)

Test Methodology JEDEC JESD22 A114-D JEDEC JESD22 C101-C

Moisture Sensitivity Level (MSL) Classification

Parameter Moisture Sensitivity Level

Level 3 (168 hours)

Test Methodology IPC/JEDEC J-STD-20

CGH40006S Rev 1.6

Note 1. On a 20 mil thick PCB.

Typical Noise Performance

Minimum Noise Figure (dB)

Note 1. On a 20 mil thick PCB.

CGH40006S Rev 1.6

Noise Resistance (Ohms)

CGH40006S CW Power Dissipation De-rating Curve

Power Dissipation (W)

Maximum Case Temperature (C)

Source and Load Impedances

Frequency (MHz) 1000 2000 3000 4000 5000 6000

CGH40006S Rev 1.6

CGH40006S-TB Demonstration Amplifier Circuit Bill of Materials

Designator R1 R2 R3 C1 C2 C10 C4,C11 C6,C13 C7,C14 C8 C15 C16 J3,J4 J1 Q1

CGH40006S-TB Demonstration Amplifier Circuit

CGH40006S Rev 1.6

CGH40006S-TB Demonstration Amplifier Circuit Schematic

CGH40006S-TB Demonstration Amplifier Circuit Outline

CGH40006S Rev 1.6

CGH40006S Rev 1.6

Product Dimensions CGH40006S (Package Type 440203)

Input/Output GND RF IN GND GND RF OUT GND

CGH40006S Rev 1.6

Tape & Reel Dimensions

CGH40006S Rev 1.6

CGH40006S Rev 1.6

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