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4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

H11AA814 SERIES
PACKAGE

H11A617 SERIES

H11A817 SERIES
H11AA814 SCHEMATIC

4 COLLECTOR

4
2 3 EMITTER

DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

H11A617 & H11A817 SCHEMATIC

ANODE 1

4 COLLECTOR

FEATURES
Compact 4-pin package Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: H11AA814A: 50-150% H11A817A: H11A617A: 40%-80% H11A817B: H11A617B: 63%-125% H11A817C: H11A617C: 100%-200% H11A817D: H11A617D: 160%-320% Minimum BVCEO of 70V guaranteed 50-600% 80-160% 130-260% 200-400% 300-600%

CATHODE 2

3 EMITTER

APPLICATIONS
H11AA814 Series AC line monitor Unknown polarity DC sensor Telephone line interface H11A617 and H11A817 Series Power supply regulators Digital logic inputs Microprocessor inputs

2003 Fairchild Semiconductor Corporation

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4-PIN PHOTOTRANSISTOR OPTOCOUPLERS


H11AA814 SERIES
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation (-55C to 50 C) EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (1 s pulse, 300 pps) LED Power Dissipation (25C ambient) Derate above 25C DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Continuous Collector Current Detector Power Dissipation (25C ambient) Derate above 25C VCEO VECO IC PD All H11AA814/A H11A617A/B/C/D H11A817/A/B/C/D All All 70 6 7 6 50 150 2.0 V V mA mW mW/C IF VR IF(pk) PD All H11A617A/B/C/D H11A817/A/B/C/D All All 50 6 5 1.0 100 1.33 mA V A mW mW/C TSTG TOPR TSOL PD All All All All -55 to +150 -55 to +100 260 for 10 sec 200 C C C mW

H11A617 SERIES
Symbol Device

H11A817 SERIES
Value Units

ELECTRICAL CHARACTERISTICS (TA = 25C Unless otherwise specied.) INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter EMITTER Input Forward Voltage Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Test Conditions Symbol (IF = 60 mA) (IF = 20 mA) (IF = 20 mA) (VR = 6.0 V) (VR = 5.0 V) (IC = 1.0 mA, IF = 0) (IE = 100 A, IF = 0) IR VF Device H11A617A/B/C/D H11A817/A/B/C/D H11AA814/A H11A617A/B/C/D H11A817/A/B/C/D Min Typ* 1.35 1.2 1.2 .001 Max 1.65 1.5 1.5 10 A V Unit

BVCEO BVECO

ALL H11AA814/A H11A617A/B/C/D H11A817/A/B/C/D H11AA814/A, H11A817/A/B/C/D, H11A617C/D H11A617A/B ALL

70 6 7 6

100

10

Collector-Emitter Dark Current Collector-Emitter Capacitance *Typical values at TA = 25C.

(VCE = 10V, IF = 0) (VCE = 0 V, f = 1 MHz)

ICEO CCE

1 8

100 50

nA pF

2003 Fairchild Semiconductor Corporation

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4-PIN PHOTOTRANSISTOR OPTOCOUPLERS


H11AA814 SERIES H11A617 SERIES H11A817 SERIES

TRANSFER CHARACTERISTICS (TA = 25C Unless otherwise specied.)


DC Characteristic Test Conditions (IF = 1 mA, VCE = 5 V) (note 1) (IF = 1 mA, VCE = 5 V) (note 1) Symbol Device H11AA814 H11AA814A H11A617A (IF = 10 mA, VCE = 5 V) (note 1) H11A617B H11A617C H11A617D Current Transfer Ratio (IF = 5 mA, VCE = 5 V) (note 1) H11A817 CTR H11A817A H11A817B H11A817C H11A817D H11A617A (IF = 1 mA, VCE = 5 V) (note 1) H11A617B H11A617C H11A617D Collector-Emitter Saturation Voltage AC Characteristic Rise Time Fall Time (IC = 2 mA, VCE = 2 V, RL = 100V) (note 2) (IC = 2 mA, VCE = 2 V, RL = 100V) (note 2) tr tf ALL ALL 2.4 2.4 18 18 s s (IC = 1 mA, IF = 20 mA) (IC = 2.5 mA, IF = 10 mA) (IC = 1 mA, IF = 20 mA) H11AA814/A VCE (SAT) H11A617A/B/C/D H11A817/A/B/C/D Min 20 50 40 63 100 160 50 80 130 200 300 13 22 34 56 0.2 0.4 0.2 V Typ* Max 300 150 80 125 200 320 600 160 260 400 600 Unit % % % % % % % % % % % % % % %

ISOLATION CHARACTERISTICS
Characteristic Input-Output Isolation Voltage (note 3) Isolation Resistance Isolation Capacitance *Typical values at TA = 25C. NOTES 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to Figure 8. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. Test Conditions f = 60Hz, t = 1 min (VI-O = 500 VDC) (VI-O = 0, f = 1 MHz) Symbol VISO RISO CISO Min 5300 1011 0.5 Typ* Max Units Vac(rms) pf

2003 Fairchild Semiconductor Corporation

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4-PIN PHOTOTRANSISTOR OPTOCOUPLERS


H11AA814 SERIES
CTR NORMALIZED @ IF = 5 mA, VCE = 5 V, TA = 25C

H11A617 SERIES
NORMALIZED CTR CTR NORMALIZED @ IF = 5 mA, VCE = 5 V, TA = 25C

H11A817 SERIES
Fig. 2 Normalized CTR vs. Ambient Temperature

Fig. 1 Normalized CTR vs. Forward Current


1.4

1.2
IF = 10 mA

1.2

NORMALIZED CTR

0.8

IF = 5 mA

0.8

0.6

0.4

0.6

0.2

0 0 5 10 15 20 25 30 IF - FORWARD CURRENT (mA)

0.4 -50 -25 0 +25 +50 +75 +100 TA - AMBIENT TEMPERATURE (C)

Fig. 3 Collector-Emitter Saturation Voltage vs. Ambient Temperature


.14
IF = 20 mA IC = 1 mA

Fig. 4 Forward Voltage vs. Forward Current

1.7

VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)

.12

VF - FORWARD VOLTAGE (V)

1.5

.1

1.3
T = -55C

.08

1.1
T = 25C

.06

.04

0.9

T = 100C

.02

0.7

0 -50

0.5 -25 0 25 50 75 100 125 0.1 0.2 0.5 1.0 2.0 5 10 20 50 100 TA - AMBIENT TEMPERATURE (C) IF - FORWARD CURRENT (mA)

Fig. 5 Collector Current vs. Collector-Emitter Voltage


25

IC - COLLECTOR CURRENT (mA)

IF = 20 mA

20

15
IF = 10 mA

10

IF = 5 mA

IF = 1 mA

0 0 1 2 3 4 5 6 7 8 9 10

VCE - COLLECTOR-EMITTER VOLTAGE (V)

2003 Fairchild Semiconductor Corporation

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4-PIN PHOTOTRANSISTOR OPTOCOUPLERS


H11AA814 SERIES
Fig. 6 Collector Leakage Current vs. Ambient Temperature

H11A617 SERIES

H11A817 SERIES
Fig. 7 Rise and Fall Time vs. Load Resistor

ICEO - COLLECTOR-EMITTER CURRENT (A)

10
VCE = 10 V

1000
IF = 5 mA VCC = 5 V TA = 25C

Tr/ Tf- RISE AND FALL TIME (s)

toff tf

10-1

100

10-2

10

10-3

10-4

1
tr

ton

10-5

10-6 0 25 50 75 100 125

0.1 0.1 1 10 100 R - LOAD RESISTOR (KV)

TA - AMBIENT TEMPERATURE (C)

Figure 8. Switching Time Test Circuit and Waveforms

TEST CIRCUIT
VCC = 10V

WAVE FORMS

INPUT PULSE

IF INPUT

IC

RL = 100
10% 90% OUTPUT PULSE

OUTPUT

tr Adjust IF to produce IC = 2 mA

tf

Recommended Thermal Reflow Profile for Surface Mount DIP Package


Temperature (C) 250 220C: 10 sec to 40 sec 200 150 Time > 183C: 120 sec to 180 sec 100 50 0 0 1 2 3 4 5 Time (Min) 225C

2003 Fairchild Semiconductor Corporation

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4-PIN PHOTOTRANSISTOR OPTOCOUPLERS


H11AA814 SERIES H11A617 SERIES H11A817 SERIES

Package Dimensions (Through Hole)

Package Dimensions (Surface Mount)

0.270 (6.86) 0.250 (6.35)

0.270 (6.86) 0.250 (6.35)

SEATING PLANE

0.190 (4.83) 0.175 (4.45)

SEATING PLANE

0.270 (6.86) 0.250 (6.35)

0.190 (4.83) 0.175 (4.45)

0.300 (7.62) TYP

0.200 (5.08) 0.115 (2.92)

0.200 (5.08) 0.115 (2.92)

0.070 (1.78) 0.045 (1.14)

0.154 (3.90) 0.120 (3.05)

0.020 (0.51) MIN 0.016 (0.40) 0.008 (0.20) 0.300 (7.62) typ
0.100 (2.54) TYP

0.020 (0.51) MIN 0.022 (0.56) 0.016 (0.41)

0.315 (8.00) MIN 0.405 (10.30) MAX

0.016 (0.40) 0.008 (0.20)

15 0.100 (2.54) TYP

Lead Coplanarity 0.004 (0.10) MAX

Package Dimensions (0.4 Lead Spacing)

Footprint Dimensions (Surface Mount)

0.070 (1.78)
0.270 (6.86) 0.250 (6.35)

0.060 (1.52)

SEATING PLANE

0.190 (4.83) 0.175 (4.45)

0.200 (5.08) 0.115 (2.92)

0.270 (6.86) 0.250 (6.35)

0.100 (2.54) 0.295 (7.49) 0.415 (10.54) 0.030 (0.76)

0.154 (3.90) 0.120 (3.05)

0.004 (0.10) MIN 0.400 (10.16) TYP 0 to 15 0.016 (0.40) 0.008 (0.20)

0.100 (2.54) TYP

NOTE All dimensions are in inches (millimeters)

2003 Fairchild Semiconductor Corporation

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4-PIN PHOTOTRANSISTOR OPTOCOUPLERS


H11AA814 SERIES
ORDERING INFORMATION
Option S SD W 300 300W 3S 3SD Order Entry Identier .S .SD .W .300 .300W .3S .3SD Description Surface Mount Lead Bend Surface Mount; Tape and reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & Reel

H11A617 SERIES

H11A817 SERIES

MARKING INFORMATION

V X YY T
3

814
1

Denitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option See order entry table) One digit year code Two digit work week ranging from 01 to 53 Assembly package code

2003 Fairchild Semiconductor Corporation

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4-PIN PHOTOTRANSISTOR OPTOCOUPLERS


H11AA814 SERIES
Carrier Tape Specifications
12.0 0.1 5.00 0.20 0.30 0.05 4.0 0.1 4.0 0.1 1.55 0.05 1.75 0.10

H11A617 SERIES

H11A817 SERIES

7.5 0.1 13.2 0.2 16.0 0.3 4.95 0.20

0.1 MAX

10.30 0.20

1.6 0.1

User Direction of Feed

NOTE All dimensions are in millimeters

2003 Fairchild Semiconductor Corporation

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4-PIN PHOTOTRANSISTOR OPTOCOUPLERS


H11AA814 SERIES H11A617 SERIES H11A817 SERIES

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

2003 Fairchild Semiconductor Corporation

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