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IRFD120

Data Sheet July 1999 File Number
2315.3

1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17401.

Features
• 1.3A, 100V • rDS(ON) = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Ordering Information
PART NUMBER IRFD120 PACKAGE HEXDIP BRAND IRFD120

Symbol
D

NOTE: When ordering, use the entire part number.
G

S

Packaging
HEXDIP

DRAIN GATE SOURCE

4-275

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

EAS Operating and Storage Temperature . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS = 0. . . . . . . . . . . . . . . . . . .5Ω for VDD = 50V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V. . . . . . . . . . ID = 250µA VDS = Rated BVDSS. . . . . 2mm (0. . . . .3 0. . . . . .5 x Rated BVDSS. . .6A (Figure 11) VDD = 0. . . . . .08in) from Package to Center of Die Modified MOSFET Symbol Showing the Internal Device’s Measured From the Source Inductances D Lead. . . . . . . . . . . . . . . . . . VGS = 0V (Figure 9) VGS = VDS. . . . .08in) from Header to Source Bonding LD Pad G LS S TEST CONDITIONS ID = 250µA. .008 36 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . See Techbrief 334 .8 x Rated BVDSS. . . . . . . . . . . . . . . . . . . . . VGS = 10V (Figures 7.6A. .1Ω RL = 38. VDS = 25V. . . Unless Otherwise Specified IRFD120 100 100 1. . . . . . . . . . . . . . ID ≈ 1. .IRFD120 Absolute Maximum Ratings TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . .5mA (Figure 13) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V. . . . . . . . . Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Drain Lead. . . . . . . . . . . .8 x Rated BVDSS. . . 8) VDS > ID(ON) x rDS(ON)MAX . . . . . . . . . . . . . . . . . . 2mm (0. . This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.VGS Maximum Power Dissipation . . . f = 1MHz (Figure 10) MIN 100 2. . . . . . . . . . . . . . . . . . . . . . . . . Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC. .25 1. . . . . . ID = 1. . . . . . . . . . . . . .3A. . TJ. . . . . . . NOTE: 1. . . . . . . . TSTG Maximum Temperature for Soldering Leads at 0. . . . . . . . . PD Linear Derating Factor (See Figure 1) . . . . . . . . . VGS = 0V VDS = 0.0 450 200 50 4. . . . . . . . . . .30 40 70 100 70 15 - UNITS V V µA µA A nA Ω S ns ns ns ns nC nC nC pF pF pF nH On-State Drain Current (Note 2) Gate Source Leakage Drain Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance Internal Source Inductance LS - 6. . . TJ = 25oC to 125oC. . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . .0 - nH Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 120 oC/W 4-276 . . . . . . . . . . . . . . . VGS = 10V. .0 0. . . . . . . . . . . . . . . . . . . . . . .063in (1.0 MAX 4. . . . . VGS = 10V VGS = ±20V ID = 0. . . . . . . . . . . . . . . . . . . . . . . . . VGS = 0V. . . .0 25 250 ±500 0. . . . . . . . . TL Package Body for 10s. .9 - TYP 0. . . . . . . . . . . IDM Gate to Source Voltage . . . . . TJ = 125oC VDS > ID(ON) x rDS(ON) Max. . . . . Tpkg CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. . . . . . . . . . . . . . . ID = 0. . . . . . . . . . .3A. . . . . . . . . . . .0 5. . . . . Ig(REF) = 1. . . . . . .2 ±20 1. . . . . . . . . .0 1. .0 20 35 50 35 11 6. . . . . . . . . . . . . . . .3 5. . . . . . . . .6mm) from Case for 10s. . . . . . . RG = 9. . . . . . . . . . . . . . . . . . . .

1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 100ms 0. AMBIENT TEMPERATURE (oC) 150 1. ISD = 1.8 Unless Otherwise Specified 1.4 0. Pulse test: pulse width ≤ 300µs. DRAIN TO SOURCE VOLTAGE (V) 50 ID.3 5. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE 10 20 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0. DRAIN CURRENT (A) 1 100µs 1ms 10ms 0.3A. DRAIN CURRENT (A) 16 FIGURE 4.2 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TJ = 25oC.2 POWER DISSIPATION MULTIPLIER 1.5 - V ns µC 2. AMBIENT TEMPERATURE (oC) FIGURE 1.3A. ISD = 1. VGS = 0V (Figure 12) TJ = 150oC. L = 32mH. RG = 25Ω.6 0.6 2. peak IAS = 1.2 0 0. dISD/dt = 100A/µs - 280 1.9 0. 3. DRAIN CURRENT (A) 0 25 125 50 75 100 TA . NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE FIGURE 2. duty cycle ≤ 2%.IRFD120 Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 1.2 0. starting TJ = 25oC. ISD = 1. dISD/dt = 100A/µs TJ = 150oC.3 0 25 50 75 100 125 150 TA .01 TJ = MAX RATED 1 10 VDS . DRAIN TO SOURCE VOLTAGE (V) DC 0. OUTPUT CHARACTERISTICS 4-277 .5 ID. VDD = 25V.3A. Typical Performance Curves 1.0 0.1 FIGURE 3.3A.6 0. FORWARD BIAS SAFE OPERATING AREA ID.5% MAX VGS = 9V VGS = 8V 12 VGS = 7V 8 VGS = 6V 4 VGS = 5V VGS = 4V 0 100 0 10 20 30 40 VDS.

ID = 0. JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2µs pulse is minimal. DRAIN TO SOURCE VOLTAGE (V) 50 FIGURE 9.6A 1.5% MAX VGS = 10V. CAPACITANCE (pF) 1000 VGS = 0V.8 2µs PULSE TEST NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON).25 IDS = 250µA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.8 PULSE DURATION = 80µs DUTY CYCLE = 0.IRFD120 Typical Performance Curves 10 PULSE DURATION = 80µs DUTY CYCLE = 0. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4-278 . DRAIN TO SOURCE VOLTAGE (V) 5 8 4 0 0 2 4 6 8 10 VGS. f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 800 1. TRANSFER CHARACTERISTICS 0.5% MAX VGS = 10V VGS = 9V 6 VGS = 6V Unless Otherwise Specified (Continued) IDS(ON). DRAIN CURRENT (A) 8 16 PULSE DURATION = 80µs DUTY CYCLE = 0.2 0.15 C. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 1.6 VGS = 10V 1. DRAIN TO SOURCE CURRENT (A) 20 VGS = 8V VGS = 7V ID. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 10. DRAIN TO SOURCE ON RESISTANCE (Ω) 2.5% MAX VDS > ID(ON) x rDS(ON)MAX 12 TJ = -55oC oC TJ = 25 TJ = 125oC 4 VGS = 5V 2 VGS = 4V 0 0 1 2 3 4 VDS.2 0 10 20 30 ID.85 200 0. SATURATION CHARACTERISTICS FIGURE 6.05 600 CISS 400 COSS CRSS 0. FIGURE 8.6 0 0. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 7. DRAIN CURRENT (A) 40 -40 0 40 80 120 160 TJ .4 0.75 -40 0 40 80 120 160 0 0 10 TJ . JUNCTION TEMPERATURE (oC) 40 30 20 VDS.2 VGS = 20V 0.4 1.0 0.95 0. GATE TO SOURCE VOLTAGE (V) FIGURE 5.

IRFD120 Typical Performance Curves 5 PULSE DURATION = 80µs DUTY CYCLE = 0. GATE TO SOURCE (V) VDS = 20V VDS = 50V VDS = 80V 10 15 5 0 0 2 4 6 QG.5% MAX Unless Otherwise Specified (Continued) 2 ISD. SOURCE TO DRAIN CURRENT (A) TJ = -55oC TJ = 25oC TJ = 125oC PULSE DURATION = 80µs gfs. DRAIN CURRENT (A) 16 20 0 2 3 1 VSD. SOURCE TO DRAIN DIODE VOLTAGE 20 ID = 5.1 TJ = 150oC TJ = 25oC 4 3 2 1 0 0 4 8 12 ID . UNCLAMPED ENERGY WAVEFORMS 4-279 .2A VGS.01Ω 0 tAV FIGURE 14. GATE CHARGE (nC) 8 10 FIGURE 13.5% MAX 102 5 2 10 5 2 0. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. TRANSCONDUCTANCE (S) DUTY CYCLE = 0. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + - 0V IAS 0. SOURCE TO DRAIN VOLTAGE (V) 4 FIGURE 11.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. 101 Fu Hsing North Road Taipei.2111 FAX: (32) 2.intersil.05 ASIA Intersil (Taiwan) Ltd. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured. nor for any infringements of patents or other rights of third parties which may result from its use. GATE CHARGE TEST CIRCUIT FIGURE 19. Rue de la Fusee 1130 Brussels. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. Box 883.IRFD120 Test Circuits and Waveforms (Continued) tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 16. see web site http://www.22.724.2µF 50kΩ 0. However. SWITCHING TIME TEST CIRCUIT VDS (ISOLATED SUPPLY) FIGURE 17. No. Intersil semiconductor products are sold by description only. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0. Accordingly. Mail Stop 53-204 Melbourne. For information regarding Intersil Corporation and its products. O. the reader is cautioned to verify that data sheets are current before placing orders. Belgium TEL: (32) 2. 7F-6.3µF G DUT 0 Ig(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR Ig(REF) 0 FIGURE 18. no responsibility is assumed by Intersil or its subsidiaries for its use. FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100.724. Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-280 . Information furnished by Intersil is believed to be accurate and reliable. assembled and tested under ISO9000 quality systems certification.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P.

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