PONDICHERRY UNIVERSITY PUDUCHERRY 605 014
Department of Electronics Engineering
M. Tech Electronics
Scheme & Syllabus
M.Tech. Program in Electronics
Department of Physics will mentor the M.Tech. Program in Electronics, which is to be introduced from the academic year 2010-11. Electronics plays important role in the development of the state of the art science and technology. Advancement of Electronics led to an all round development on human comfort, safety and furthers research on almost all scientific technology and engineering endeavours. M. Tech. (Electronics) program is envisaged as a science, engineering and technology. M. Tech. program is designed to impart the necessary background knowledge of the state of art developments in all the areas of electronics – devices to systems. The modern physics courses in most of the universities at graduate and post - graduate level of science try to cover the fundamental aspects of electronics Viz., semi-conductor physics and circuit theory. The engineering graduates are specialized only in technological aspects of the application of theses devices and circuits in instrumentation and communication systems. The present M.Tech. program is aimed to bridge this gap between the science and technology students. The emphasis will be on understanding both the science and technological aspects of electronics. Further it will enable them to design new devices and systems. The program is planned to cover the following aspects in detail. 1. 2. 3. 4. Devices: Design, fabrication and Application Communication: Microwave, digital and optical communication System design: Analog, digital and mixed-mode. Embedded Systems: Real time and Robotics applications
The students who pass out of this course will have good Industrial and research opportunities.
Details of the program Program Duration: Two years (Four Semesters); Total number of credits: 73 Eligibility criteria: B.E /B.Tech in EEE, ECE and E&I , M.Sc. Electronic Science / Physics with Electronics/ Materials Science with Electronics / Solid State Technology with Electronics Admission criteria: Pondicherry University – All India Entrance Examination Or valid GATE Score in relevant disciplines Intake: 24 students Teaching and Learning Methods: Lectures, tutorials and seminars form the main methods of course delivery enhanced by individual and group project work, laboratory work, computing workshops and industrial visits. Assessment Methods: Assessment will be through Choice Based Credit System (CBCS) through session (laboratory reports, class tests, set assignments) or by continuous assessment (designing, computer practical, seminar papers, project reports etc.) and end semester examinations. The end semester question paper can be set by concerned course teacher Scheme of Courses and Credits for M.Tech Electronics: First year: Odd semester Even Semester
Compulsory subjects 4 (16) 3 (9) Elective Subjects 2 (6) 5 (15)* Practical – Laboratory 1 (3) 1 (3) *Depending on Students choice & faculty availability all three or two Groups (A/B/C) will be offered Second year Project work & Dissertation
Dr. V.V. Ravi Kanth Kumar Centre Head Department of Electronics Engineering Pondicherry University
Scheme of Study
S.No Course No. Course Title. L-T-P Credits
1. 2. 3. 4. 5. 5. 6. 7. 8. 9. 11. 12. 13. 14. 15. 16. 17. 18.
EEC7100 EEC7101 EEC7102 EEC7103 EEC7104
SEMESTER- I Embedded systems & Electronic Design Laboratory Quantum Mechanics Its applications to Tech. & Adv Engg. Maths Semiconductor Devices & Technology Digital Signal Processing & Applications Electromagnetic Theory, Interference & Compatibility Elective - I Elective – II List of Electives – I & II MOS Device Modelling Embedded systems Micro-electromechanical systems design, MEMS SEMESTER – II Advanced Embedded Systems & Specialisation laboratory Analog & Digital Design Techniques Research Seminar Elective – III* Elective – IV* Elective – V* Elective – VI* Elective – VI*
0-1-5 4-0-0 4-0-0 4-0-0 4-0-0 3-0-0 3-0-0 3-0-0 3-0-0 3-0-0 0-1-5 4-0-0 2-0-0 3-0-0 3-0-0 3-0-0 3-0-0 3-0-0
3 4 4 4 4 3 3 25
EEC7105 EEC7106 EEC7107 EEC7200 EEC7201 EEC7202
18. 19. 20. 21. 22. 23. 24. 25. 26 27.
4 2 3 3 3 3 3 24 *All Elective of Semester-II has to be chosen from the same Group i.e. Group A/B/C List of Electives – III, IV, V, VI & VII Group-A: VLSI Technology EEC7203 VLSI Technology 3-0-0 EEC7204 VLSI Systems & Architecture 3-0-0 EEC7205 CAD Tools for VLSI Design 3-0-0 EEC7206 CMOS VLSI Design 3-0-0 EEC7207 ASIC Design 3-0-0 EEC7208 Low Power VLSI Design 3-0-0 EEC7209 Design Analog & Mixedmode VLSI Circuits 3-0-0 EEC7210 Alogarithm for VLSI 3-0-0 EEC7211 VLSI Testing & Verification 3-0-0 EEC7212 Advanced Analog & Digital Circuit Design
32. if any & Viva voce 53. EEC7234 Semiconductor Power Devices 3-0-0 50. EEC7213 EEC7214 EEC7215 EEC7216 EEC7217 EEC7218 EEC7219 EEC7220 EEC7221 EEC7222 EEC7223
Course Title. 29. Group B: Communication Electronics
28. EEC7231 High Speed Semiconductor Devices 3-0-0 47.S. EEC7232 Nano Electronics 3-0-0 48. EEC7224 RF MEMS 3-0-0 40.No
Course No. Literature Review.Project Report – Problem Definition. EEC7229 Molecular Electronics 3-0-0 45. 31. 33. EEC7300 Phase I – Project. EEC7230 Reliability of Semiconductor Devices 3-0-0 46.
Passive Microwave Devices & Circuits 3-0-0 Antenna Theory & Design 3-0-0 Optical Communication & Networking 3-0-0 Wireless communications 3-0-0 Advanced Digital Communications 3-0-0 Active RF & Microwave Circuits 3-0-0 CMOS RF Circuit Design 3-0-0 Modelling & Simulation of Networks 3-0-0 Microwave Integrated Circuits 3-0-0 CAD of RF & Microwave Circuits 3-0-0 Fabrication & Measurement Techniques for RF 3-0-0 & Microwaves 39. EEC7227 Ultra Wideband Wireless Communication 3-0-0 Group C: Nano Electronics 43. Preliminary results. EEC7400 Phase-II – Project. Comprehensive Project report with results & Viva Voce TOTAL NUMBER OF CREDITS TO BE OBTAINED FOR THE COURSE
. EEC7236 Semiconductor Device Characterisation 3-0-0 Techniques SEMESTER – III & IV 52. 35. 36 37. EEC7225 Advanced Techniques in Wireless Networks 3-0-0 41. Mid. EEC7228 Silicon on Insulator MOS Devices & Multiple 3-0-0 Gate Devices 44. EEC7226 OFDM for Wireless Communication 3-0-0 42. 30. EEC7233 Compound Semiconductor Devices 3-0-0 49. 34. EEC7235 Material Science 3-0-0 51. 38.
Simulation of MOS modelling circuits using modeling package
. Synthesis of different digital modulation schemes (PCM. Impedance measurement using Gunn diode b. b. Serial Communication 2. Simulation of analog circuits using PSPICE b. Simulation of communication circuits using PSPICE /MATLAB d. c. Simulation a.EEC7100
EMBEDDED SYSTEMS AND ELECTRONIC DESIGN LAB 0-1-5 Credits: 3
1. d. DSP (TMS320C50) based experiment a. b. Communication Experiment a. Synthesis of Counter using VHDL/Verilog c. Analysis of sampling and noise spectral density e. Synthesis of Register using VHDL/Verilog 5. Stepper Motor controller c. Gain measurement of Parabolic dish antenna using Klystron oscillator c. ADC/DAC . Synthesis of Gates using VHDL/Verilog b. Linear Convolution ADC/DAC Interface LPF/HPF/BPF/BSF Waveform Generation
3.DM. VLSI a. Clock d. Microcontroller (8 bit) based experiment a. Characteristics of Directional Couplers d. Simulation of digital circuits using PSPICE c.DPCM ADM) 4.
Heisenberg’s uncertainty principle 10 hours UNIT-II: Wave particle duality. Eigen Energy. Advanced Engineering Mathematics. Mathematics for Physicists. Triangular Potential wells. Eigen vectors. complex integration. Young’s double slit experiment. 8. Matrices and Tensors
TEXT BOOKS/REFERENCE BOOKS 1.EEC7101
QUANTUM MECHANICS & ITS APPLICATIONS TO TECHNOLOGY &ADVANCED ENGINEERING MATHEMATICS 4-0-0 Credits:4
5 hours UNIT-I: Failure of Classical Mechanics: Black body radiation. 7th ed. J. double potential wells. Time dependent Schrodinger’s wave equation. G.. Finite Dimensional Vector spaces. 4th ed. 7. Solutions to Schordinger’s wave equation. 2nd Ed.F. Erwin Kreyszig. 1999 10. Pergamon (1974)
. Dennery and A. Academic Press 2.. potential well). Modern Quantum Mechanics by J. tunnelling Electrons in periodic lattices (KP Model). Dover Publications (1996) 4. 10 hours UNIT-III: Probability. George B Arfken. Differential equations with applications.).) Pearson Education (2005) 9. Springer (1994) 11. J. Constantinescu and Magyari. Griffiths (2nd Ed. Electrons in potentials (infinite barrier. Eigen values. Theory and Problems of Vector Analysis. Wave equation and Schrodinger’s equation. P Halmos. John Wiley & Sons INC. spectral lines. Principles of Quantum Mechanics. 1972. by David. Sakurai Addison Wesley. non-linear differential equations and its solutions. Shankar (II Ed. John Wiley 3.Simmons. double barriers. Tata-McGraw Hill. Mathematical methods for physicists. Linear algebra. R 5. Van Nostrand. Introduction to Quantum Mechanics. P. Probability Current density. M. . McGraw Hill (1959). Probability Density. 5 hours UNIT-IV: Tunnelling phenomenon. Krzywicki. E-k diagrams 30 hours UNIT-V: Advanced Mathematics: Linear differential equations and its solutions. R. 6. Quantum Mechanics Fundamentals & Applications to Technology by Jasprit Singh. Problems in Quantum Mechanics. Spiegl.
I-V and CVs for dopant profile characterization. M. Characterization of MOS capacitors: HF and LF CVs. operation. 5. Physics of Semiconductor Devices. TEXT BOOKS/ REFERENCE BOOKS 1. Prentice-Hall of India Pvt. Nandita Das Gupta and Amitava Das Gupta. avalanche injection. band gap diagrams. Quantum well LASER. Ltd. SiGe ). holes and phonons. S. UNIT –IV: 12 hours Advanced Devices: Crystal structure of III-V binary and tenary compound semiconductors (InP. 2. Carrier statistics. Sze. Band diagrams. ideal and non-ideal MOS capacitor: band diagrams and C-V characteristics. Excess carriers in semiconductors: Doping.EEC7102
SEMICONDUCTOR DEVICES & TECNOLOGY
UNIT – I : 12 hours Semiconductor Physics: Review of crystal structure. M. 12 hours UNIT – III: MOS structures: Introduction. interface passivation techniques. “Semiconductor Devices: Modelling and Technology”. Review of quantum mechanics. I-V and C-V characteristics (Analytical expressions). Crystal structure of important semiconductors (Si. J. Injection and recombination mechanisms. Semiconductor devices: Basic Principles. Single electron devices. Epitaxy. 1991. Heterojunctions. UNIT –V: 12 hours Fabrication and Characterization Techniques: Crystal growth and wafer preparation. Thinfilm deposition and oxidization techniques. Ge & GaAs). Ion Implantation. benefits of heterojunction transistors for high speed applications. passivation of interface states. scaling down. organic semiconductor devices. High field effects and breakdown. 2nd edition John Wiley. 2004. Spintronic devices. Transistors (BJT & JFET): structure. MOSFET and CCD: Band diagrams. Characterization techniques: Four-probe and Hall measurement. 4. Tyagi. Effects of oxide charges. Resonant -tunneling hot electron transistors. Planar technology: Masking and lithography techniques (UV. I-V and C-V characteristics (Analytical expressions). alternate high k-dielectric materials. Electrons in periodic lattices. E-k diagrams. UNIT – II: 12 hours Metal Semiconductor Structure: Homo and Hetero-Junctions (Schottky diode): structure. 1981. Harper and Row and John Weathe Hill. electrons. 3. Introduction to Semiconductor Materials and Devices. Introduction to Solid State and Semiconductor Physics. Optical. J. velocity versus electric field characteristics and device processing techniques of these materials. Wiley student edition 2004
. P. Electrical properties such as carrier mobility.e-beam and other advanced lithography techniques) Metallisation. Thermal and High field properties of semiconductors. SOI MOSFET. InP based HBT device structure. Bipolar and MOS integration techniques. InGaAs. Continuity equation. Quasiparticles in semiconductors. HF-MOSFETs. Poisson's equation and their solution. defects and interface states. operation. Carrier concentration and carrier transport phenomenon. McKelvey. Singh. John Wiley & Sons. I-V and C-V characteristics (Analytical expressions). SiGe based HBT devices. small signal switching models. band diagrams. Diffusion. High Frequency resonant tunneling diodes.S. Capacitance transients and DLTS.
Low pass. Control operations. Park-McClellan's method. 3. Application specific units.V.Mitra. S.
UNIT-IV: Architecture of a Fixed Point Processor
12 hours Difference between DSP and other microprocessor architectures.Jervis. Thomson Brooks/ Coke. 2004. 1992. S. Srinivasan and Avatar Singh. Tata Mcgraw Hill. DFT. 1989. Linker. Sampling and Reconstruction of signals. Discrete Time Fourier Transform. DFT as a linear transformation.I: Introduction 12 hours Discrete Time Signals: Sequences. Pearson Education. Prentice Hall. “Digital Signal Processing. Compiler. 2001. 1994 9. Interrupts. Assembler. K. Relationship of DFT to other transforms. Debugger. Proakis and D. Prentice-Hall. 10. John G. Definition. FFT Algorithms: Decimation-intime radix-2 algorithm and Decimation-in-frequency radix-2 algorithm. Architecture.Venkataramani and M. 1987. Digital Signal Processing: Principle.Slin.R. Texas Instruments TMS 320C54X DSP CPU. Chebyshev and Elliptic Approximations. Properties of DFT. Memory and Buses.Ifeachor and B. “Discrete Time Signal Processing”. John Wiley and Sons. “Digital Signal Processing with C and TMS320C30”. (2/e). Linear filtering using DFT. voice synthesis and recognition. Implementation of MAC. 1997. Design of IIR Digital Filters: Butterworth. Digital filters.II: Discrete Fourier Transform Definition. Programming and Applications”. IDFT. Introduction to Digital Signal Processing. Rulth Chassaing. Algorithms and Applications. “DSP Applications with the TMS320 family”. Band pass. B. Adaptive filter. Classification of systems. 5.C. IDFT calculation using fast algorithm. 7. Notch filter. Code generation. DSP boards. Prentice Hall. Prentice Hall. J. Mnemonic and Peripheral User Guides. (2/e). Waveform generation. echo cancellation. Pipeline operation.EEC7103
DIGITAL SIGNAL PROCESSING AND APPLICATIONS
. Implementation of discrete time systems 12 hours UNIT. E. Discrete Time Systems: Discrete time systems. Texas Instruments TMS320C30 User Guide. TMS 320C54X processor architecture: Introduction. A. Implementations using DSP Microprocessors with examples from TMS320C54X”. 2. Johnson.Bhaskar. 6. Addressing modes.
12 hours DSP tools: Simulator. “Digital Signal Processor. representation of signals on orthogonal basis. Oppenheim and Schafer. Band stop and High pass filters.
UNIT V: DSP Tools and Applications
TEXT BOOKS/ REFERENCE BOOKS
1. Central Processing Unit. Instruction sets. 11. 2002. 1998 8. 2003 4. Auxiliary Register Unit. “ Digital Signal Processing”. efficient computation of DFT.III: Digital Filter Design Design of FIR Digital filters: Window methods.Hill. their comparison. modems. 12 hours UNIT.G.K. Convolution sum and its properties.1992. Manolakis. “Digital Signal Processing”. Tata McGraw.
3rd Edn. T. Bartia. Transient EMI. “Elements of Electromagnetics. Tx /Rx Antennas. Wiley.C. Artech house. K. Ott. “Handbook of EMI/EMC”. ESD. IEEE Press. 1992.Edwards. FCC. UNIT. 2ed.C.Ryder. Quarter wavelength and half wavelength lines. Military standards-MIL461E/462. “Lumped Elements for RF and Microwave Circuits”. “Electromagnetic Waves and Radiating Systems”. Differential mode coupling.I: Electromagnetic Waves 12 hours Introduction to electromagnetic fields: review of vector analysis. cross talk. Sources and victim of EMI. Waves in conducting medium. Bahl and P. Grounding. TEXT BOOKS/REFERENCE BOOKS
Mathew N Sadiku.Gunn effect diode. Don R.White Consultant Incorporate. UNIT. 6. Derivation of skin depth. Common ground impedance coupling. “Foundations for Microstrip circuits design”. 3. I Bahl. “Introduction to Electromagnetic Compatibility. Microwave Transistors and FETs.” John Wiley. IEC. John D.II: Transmission Lines 12 hours Transmission lines. R.. “Networks. 1986.” John Wiley and Sons. “Foundations for Microwave Engineering”. Collin. EN. electric and magnetic potentials. Lines and Fields. Numerical Problems. 1988. wave equation. Sensors. 10.IV: EMI/EMC Concepts EMI-EMC definitions and Units of parameters. Near field cable to cable coupling. Avalanche Transit time devices: IMPATT. Jordan. EMI test shielded chamber and shielded ferrite lined anechoic chamber. Wiley Inter Science. Transferred Electron Devices (TEDs) .” PHI. Filtering.. radiated and transient coupling. Reflection and refraction of electromagnetic waves at an interface between dielectric and vacuum. Parallel plate transmission lines. 2. Prentice-Hall of India. Artech House.III: Microwaves 12 hours Introduction. 1993. and coupling factors. Common mode and ground loop coupling. Gunn diode as an oscillator. INTERFERENCE AND COMPATIBILITY 4-0-0 Credits:4
UNIT. Shielding. Civilian standards-CISPR. Conducted and Radiated EMI Emission and Susceptibility. Inc. “Classical Electrodynamics.G. diffusion equation. Bernhard Keiser.” Oxford University Press. Poynting vector.. Henry W.V: EMI Measurements and Standards 12 hours Open area test site.
1. 2005. David Jackson. I. EMI Coupling and controlling Techniques: Conducted. Power mains and Power supply coupling. Klystrons. RLCG parameters. 4. Wave propagation through conductor-dielectric interface. TRAPATT and BARITT. John Wiley & Sons.R. Propagation constant and characteristic impedance of a general. boundary conditions. 11.E. 9. Paul C. Injectors / Couplers. 1988. “Noise reduction Techniques in Electronics Systems”. Skin effect and resistance. Helmholtz equation. Reflex Klystron. and Bonding. 12 hours UNIT. 7. and Balmain. 12. (2/e).EEC7104
EM THEORY. E. Field to cable coupling. Maxwell's equations. Radiation Hazards. “Microwave Solid State Circuit Design”. 8. Plane electromagnetic waves. “Principles of Electromagnetic Compatibility”. Vol I-V. Smith chart and its applications. Numerical Problems. TEM cell. Principle of operation. UNIT. 2003. lossless and distortion less transmission line. 5. Magnetrons.
. 2nd ed.J. EMI Rx and spectrum analyzer.
11. 12. Semiconductor Device Fundamentals. 7. John Wiley 2009.Physics and Technology. effect of source bias and body bias on threshold voltage and device operation. ISBN 8131705358. 6. ISBN 1-40207-018-7 (available online at NITC intranet.S. Jean. C.
TEXT BOOKS/ REFERENCE BOOKS:
1. Amitava Das Guptha. ISBN 020154393-1. Silicon-on-insulator Technology: Materials to VLSI. J. off current characteristics. 4. Semiconductor devices. J. flatband voltage.Bharracharya. Enz.P. 2005. John Wiley 2006. Non-Ideal MOS: work function differences. Addison-Wesley (1995). electrostatics of a MOS (charge based calculations). Operation and Modeling of the MOS transistor. (Indian edition available). ISBN-0-479-85541-X 14. A. MOSFET (Enhancement and Depletion MOSFETs). charges in oxide. 1998.
. 5. ISBN 978-0-470-82342-2. PD SOI. Nandita Das Guptha.Tyagi. Prentice hall: New Delhi. on current characteristics. Brews. Donald A Neamen. UNIT-II: 15 hours Three terminal MOS. John Wiley & Sons. medium and high frequencies. effect of interface states on sub threshold swing. effect on threshold voltage. FD SOI and their characteristics.Colinge. calculating various charges across the MOSC. McGraw-Hill (1997) ISBN 0-256-24214-3. 2. Large signal Modeling. threshold voltage. R. John Wiley and Sons. Oxford University Press. Physics of Semiconductor Devices. Kluwer Academic publishers group. Prentice Hall India 3. Pierret. threshold voltage of a SOI MOSFET. band diagram of non-ideal MOS. Cambridge Press. Kulwer Academic Publishers. BRENNAN. Alternate MOS structures. Introduction to Semiconductor materials and Devices.B. Wiley (1998) ISBN 0-471-15237-4. mobility. S. Yuan Taur & Tak H Ning. London. Short channel and narrow channel effects. Semiconductor Physics and Devices Basic Principles.M. Kevin F. 15 hours UNIT-III: MOS transistor in dynamic operation. 13.H. Kanaan.I: Semiconductor surfaces.A.Pierrie Colinge. Cambridge University Press. Metal Oxide Semiconductor . ISBN: 9971-51-316-1. Compact MOSFET Models for VLSI Design. Vittoz. Yannis Tsividis. interface states. 9. Charge-based MOS Transistor Modeling. sub threshold swing. Multi-gate SOI MOSFETs.Colinge. MOS device in thermal equilibrium. Introduction to semiconductor devices: for computing and telecommunications applications. Cric A. Sze. ISBN 978-0-521-670364. small signal model for low. Scaling. 1998. M.High field effects. E. drain conductance and transconductance. 10. Robert F. Semiconductor Devices Modeling and Technology.EEC7105
MOS DEVICE MODELLING
15 hours UNIT. in Springer eBook library. Ideal MOS structure. Fundamentals of Modern VLSI Devices. Nicollian. KANO. Christaian C. status 15th March 2010). MOS as a capacitor (2 terminal device). Modern Semiconductor Device Physics. 8. SOI concept.
Second Edition-2003.Advanced I/O Serial high speed buses: ISA.Real Time Operating System . 3. Set-top Boxes.Types and Examples of I/O devices. Morgan Kaufman Publishers. Ink jet printer .Concepts of Embedded Programming in C++:.
. Addressing modes.RTOS Task scheduling models:. Embedded Systems Design. ‘USB’. Remote Procedure Calls (RPCs) . C++ Programming in assembly language (ALP) vs High Level Language . Requirement Analysis. Function Calls . Iso-synchronous and Asynchronous Communications from Serial Devices . First Indian Reprint 2000. System Analysis and Architecture Design. TATA McGraw-Hill. Newnes. Instruction issue and execution. Computers as Components: Principles of Embedded Computing System Design – Harcourt India. Use of Date Types. Wayne Wolf.Co-operative Round Robin Scheduling. cPCI and advanced buses. Pipelining.Examples of Internal SerialCommunication Devices:. John Wiley.Hardware Design and Software Design.EEC7106
3-0-0 Credits: 3
9 hours UNIT I: Introduction to Embedded Processors Introduction to Embedded Computing. Cyclic Scheduling with Time Slicing.Simon. Device Management . Process Management. An Embedded Software Primer. Message Queues. Rajkamal. 2002. PCI-X. First Indian Reprint 2001. 4. Pointers. Embedded Systems Architecture. Structure. Data alignment and byte ordering. Priority Inversion Problem and Deadlock Situations. ‘C’ Program compilers – Cross compiler – Optimization of memory needs. Kernel. First reprint Oct. TEXT BOOKS/REFERENCE BOOKS 1. configurable processors and multi-core processors.System Architecture. Issues and Challenges in Embedded system Design. custom designed chips. Instruction formats. 5. Use of Semaphore(s). Frank Vahid and Tony Givargis. Trends: SC. Pipes. instruction sets. Synchronous. ‘CAN’.Objected Oriented Programming. 9 hours UNIT IV: Real Time Operating Systems Definitions of process.Operating System Services:.Timer and Counting Devices – Serial Communication using: ‘I2C’. Embedded processor architecture: General concepts. Embedded Programming in C++. configurable designed chips. UART. Design Examples: Telephone PBX. Introduction to VLIW and DSP processors. Programming and Design. Mailboxes.C Program Elements:Macros and functions. Levels in architecture. Parallel Port Devices .SPI. Virtual (Logical) Sockets. Embedded Systems Design – A unified Hardware /Software Introduction. David E. Steve Heath. 2003 2. Structures. 9 hours UNIT III: Programming Concepts and Embedded Programming in C. Personal Digital Assistants. Specification.Goals. PCI. tasks and threads – Inter Process Communication:. Memory Management. Functional description-hardware/software trade-off Introduction to RISC architecture. Pearson Education Asia. 9 hours UNIT V: System Design Techniques Design Methodologies.Shared data problem. 9 hours UNIT II: Devices and Buses for Devices Network I/O Devices:.
“RF MEMS and their Applications”.
. comb-drive structures. 2001. Senturia. anodic and fusion bonding. Artech house. Madou. G. on-chip components. Campbell. Oxford Univ. H. surface micro machining. evolution of semiconductor sensors. 4. 2001 6. Wiegerink. “Mechanical Microsensensors”. Varadan . M. Press. Cantilever based MEM switch. Artech House 7. electrostatic actuation. driving force for MEMS development. 2001. bulk micro machining. Kovacs. Varadan. space and defense applications. 2002 2. “Microsensors. M. Micromachined Transducers Sourcebook. 10. “Microsystem Design”.I:
MICRO-ELECTROMECHANICAL SYSTEMS DESIGN 3 -0-0 Credits:3 Introduction 9 hours
History of Micro-Electro Mechanical Systems (MEMS). 2nd ed. Springer 2001 8. De Los Santos. membrane based switch design. Micromachined and reconfigurable antennas. “Introduction to Microelectromechanical (MEM) Microwave Systems”.EEC7107 UNIT. cantilever based MEMS switch. M Elwenspoek R.A.. Classification and terminology of sensors. Actuation methods in MEMS. “An Introduction to Microelectromechanical Systems Engineering”. N Maluf .K. Membrane based switch design microwave material and mechanical considerations. S. “The Science and Engineering of Microelectronic Fabrication”. sensor characterization basic concept of acoustic. McGraw Hill Science. thermal sensors and integrated sensors. Awadelkarim.J. Materials and fabrication technologies.O. V. 9 hours UNIT-V: MEMS Applications Examples of RF MEMS components and case studies: Micro-switches. Introduction and origin of MEMS. 2002 3. Transmission lines and other components. mechanical. magnetic.III: MEMS Switch
MEM switch. MEMS & Smart Devices”.
TEXT BOOK/ REFERENCE BOOKS
1. CRC Press 2001. Micromachined phase shifters. Jose. 1998 9. V. CRC Press. Vinoy and K. 1999. The MEMS switch.
UNIT. John Wiley. Gad El Hak The MEMS Handbook. K. MEMS fabrication technologies: Conventional IC fabrication processes.J. Special considerations in RF MEMS design. parallel plate capacitor-cantilever beam based movement. radiation. Actuation in MEMS devices.T. Gardner . John Wiley.
UNIT.W. Planar. packaging techniques for MEMS. market for MEMS. fabrication process.K. LIGA process. Kluwer. 5. J. O.
UNIT-II : MEMS Sensor and Actuators
Sensors.IV: RF MEMS 9 hours Introduction to RF MEMS technologies: Need for RF MEMS components in communications. “Fundamentals of Microfabrication”.
. D. Design and implementation of Decoders using FPGA c. Process simulations of pn junction diode. General experiments for VLSI & Communication i) Microcontroller (16 bit) based experiment a) ADC/DAC c) Clock b) Stepper Motor controller d) Serial Communication ii) DSP (5416 processor) based experiment a) Circular Convolution d) IIR b) FFT e) Speech processing c) FIR B. Design and testing of Microstrip coupler j. CNT based devices etc. Branch line Coupler and Microstrip antenna using ADS software m. Directional Coupler. Response of filters using Network Analyser e. BJT and MOSFET c. Design and implementation TDM using FPGA f. Performance evaluation of digital data transmission through fibre optic link. Simulation and performance analysis of Phase Shifter. SOI devices. Device Simulations of pn junction. BJT & MOSFET b. Should go in congruence with circuit design courses.EEC7200 ADVANCED EMBEDDED SYSTEMS AND SPECIALISATION LAB 0-1-5 Credits: 3 A. Synthesis of QAM modulation b. Design. Simulation and performance analysis of wireless communication system (OFDM MC . Simulation and performance analysis of error control coders using MATLAB n. Circuit design experiments based on Design Compiler which do some circuit to layout related simulations. Matching network. Response of MIC components using Network Analyzer f. VLSI Specialized Laboratory a. Nano electronic devices simulation (like tunnel FET. implementation and testing of CDMA system h. Nanoelectronics Specialized Laboratory a. Spectral density of modulator circuits using Spectrum Analyser d. Synthesis of GMSK Modulation c. Design and implementation of Spread Spectrum using FPGA g. Simulation of routing protocols of wireless networks (Wi-Fi/Ad hoc/WSN) using NS 2/OPNET o. Characteristics of MIC components k. Design and implementation of multiplexers using FPGA b.CDMA) using MATLAB l. Transmission line parameter measurement using Network Analyser g. Design and implementation of error control coders using FPGA e. Gain measurement of Microstrip antenna i. Communication Specialized Laboratory a. Molecular electronic devices. Impedance. Design and implementation of PLA using FPGA d.). Design and Implementation of filters using FPGA h.
Capabilities and Limitations of Finite – State Machines. Boolean Differences. Second Algorithm for the Design of Fault Detection Experiments.2004
. “Theory of Computer Science – Automata. Mishra & Chandrasekaran. PLA minimization. State Equivalence and Machine Minimization. Distinguishing Experiments. 2nd Edition. Logical Fault model. UNIT-V: CAPABILITIES. Fault Detection by Path Sensitizing. Tata McGraw Hill Edition 2. Languages and Computation”. Fault-Detection Experiments for Machines which have no Distinguishing Sequences. Nulling resistor compensation. 2nd Edition. E.Fault Table method. Fault Tolerant Design and Redundancy Techniques 9 hours UNIT-IV: FAULT DIAGNOSIS IN SEQUENTIAL CIRCUITS State—Identifications and Fault-Detection Experiments: Homing Experiments. Fault model in PLA. 1985 4. 1983 5. test generation and Testable PLA design TEXT BOOKS/ REFRENCE BOOKS 1. Simplification of Incompletely Specified Machines. “Introductory Theory of Computer”. Krishnamurthy. Detection of Multiple Faults. “Fault Tolerant and Fault Testable Hardware Design”.. PHI. “Switching and Finite Automata Theory”. V. CMOS oscillators-ring oscillators-LC oscillators-colpitts and one-port oscillators-voltage controlled oscillators-tuning in oscillators 9 hours UNIT II: Designing with Read only Memories-Programmable logic Array-Programmable Array LogicSequential Programmable Logic Devices State transition table-State Machine Charts-Derivation of SM Charts-Realization of SM chartsDesign example-Adder-Multiplier. Design of Diagnosable Machines.State Model. Prentice Hall Inc. 3. Charles Roth Jr. AND TRANSFORMATION OF SEQUENTIAL MACHINES: 9 hours The Finite. Parag K Lala. Further Definitions. “Digital Circuits and logic Design”.Binary Divider-PLA-PAL UNIT-III: FAULT MODELING AND TEST PATTERN GENERATION IN COMBINATIONAL CIRCUITS 9 hours Hazards in combinational and sequential circuits.EEC7201
ANALOG & DIGITAL DESIGN TECHNIQUES
3 -0-0 Credits:3
UNIT-I: ANALOG CIRCUIT DESIGN 9 hours MOS differential amplifiers-common mode response-differential pair with MOS loads-Noise in differential pair-CMOS operational amplifiers-one stage op-amps and two stage op-amps –gain boosting-Miller. Machine Identification. Fault diagnosis in Combinational Circuits. Zvi Kohavi. Macmillan Press Ltd. MINIMIZATION.
LPCVD. ALCVD. spreading resistance method. Growth of High k and low k dielectrics 5 hours UNIT-V: Etch and Cleaning: materials used in cleaning. 5 hours UNIT-II: Oxidation: Kinetics of Silicon dioxide growth both for thick. exposure. VLSI Fabrication Principles.
. 1988 4.K.Sze (Ed). Ion implantation. James Plummer. VLSI Technology. proximity and projection lithography. masks.Griffin. UNIT-III: 5 hours Diffusion and Ion Implantation: Diffusion process. ULSI Technology. rapid thermal annealing. Numerical Aperture (NA). characterization of material based on band diagram and bonding. Ghandhi. phase diagram and solid solubility. Metal interconnects. 2nd Edition. contrast. various doping techniques. epitaxy. conductivity. multi dimension oxidation modelling. 8 hours UNIT-VII: Planarization Techniques: Need for planarization. Crystal growth techniques. evaporation. Epitaxy. Process integration: NMOS. Next generation technologies: Immersion lithography. S. Clean room and safety requirements. Implant characterization SIMS. basis. Oxford University Press. 1983. 12 hours UNIT-VI: Photolithography: Positive photo resist. etch selectivity/selective etch. M. Resolution. Prentice Hall Electronics 2. DealGrove model and Improvements in Deal-Grove method for thin and ultra-thin oxide layers. sheet resistance. PVD. Depth of Focus. advanced annealing methods. develop(development of resist).M. spin coating.. 5. EUV lithography. John Wiley Inc. New York. C. 5 hours UNIT-IV: Deposition & Growth: Various deposition techniques CVD. resistivity. comparison of photo resists. Interconnect Technologies: Copper damascene process. Plasma etching. The Science and Engineering of Microelectronics. thickness characterization methods. S. angle between different planes. RIE etching. thermal budget. SCALPEL. Phase shift mask. optical proximity correction.EEC7203
3-0-0 Credits: 3
UNIT-I: 5 hours Material properties. X-ray lithography. 1996 3. lattice. Sze (Ed). Chang and S. McGraw Hill Companies Inc. 1996. crystal structure. sputtering. damage annealing. need for different light sources. statistics of ion implantation. various cleaning methods. directions. McGraw Hill. modelling of Ion implantation. Multi-level metallization schemes.
TEXT BOOK/ REFERENCE BOOKS
1.M. ion lithography. components of a resist. MBE. Deal and P. thin and ultra-thin films. Solid state diffusion modelling. planes.Y. Contact. e-beam lithography. Chemical Mechanical Polishing. Dry etch. Wet etch. light sources. wafer cleaning. Silicon VLSI Technology. sensitivity. CMOS and Bipolar process. step and scan. spike anneal. Stephen Campbell. negative photo resist.
Dedicated DSP architecture Concepts: Synthesis. “DSP Integrated Circuits”. Second edition. Thomson Learning. “DSP: Architecture. D A Patterson and J L Hennessy. 12 hours UNIT-III RISC Architecture Concepts: Typical RISC instruction set and its VLSI implementation. Baskar. Programming and Applications”. Academic Press 1999. Avtar Sing and Srinivas S. immediate interrupts and traps. RTlevel optimization through hardware flow charting. “DSP: Architecture. “Computer Architecture: A Quantitative approach”. pipelining. Margon Kaufmann. cache. etc.) 12 hours UNIT-II CISC Architecture Concepts: Typical CISC instruction set and its VLSI implementation. 1996 2. Scheduling and Resource allocation. “Computer organization and Design: Hardware/Software interface” Second Edition. Execution pipeline.EEC7204
VLSI SYSTEM AND ARCHITECTURE
3-0-0 Credits 3
UNIT-I 9 hours Behavior and Architecture: Dedicated and Programmable VLSI architectures. concepts of scheduling (Static and dynamic) and forwarding to reduce / minimize pipeline stalls Exceptions in pipelined processors 12 hours UNIT-IV DSP Architecture Concepts: Typical DSP instruction set and its VLSI implementation Dedicated Hardware Architecture Concepts: Example and Case studies. 3. Venkataramani and M. Design of the execution unit. distributed arithmetic architecture
TEXT BOOK/ REFERENCE BOOKS
1. Design of the control part (micro programmed and hardwired). handling exceptions: Instruction boundary interrupts. 5. Hazards of various types of pipeline stalling.
. Lars Wanhammar. TMH. D A Patterson and I L Hennessy. Programming and Applications”. B. Instruction sets and through enhancement techniques (Parallelism. 2002. Margan Kaufmann. 1998 4. Benefits and problems of pipelined execution. 2004. Conventional Residue number.
Partitioning algorithms. PLA PLA folding. other partitioning algorithms Placement. Naveed Shervani. classification of routing algorithms. three layer channel routing algorithms. Rolf Drechsheler : “Evolutionary Algorithm for VLSI”. Kluwer Academic Publisher. Kernels & co-Kernals. “Algorithm and Data Structures for VLSI Design”. 2002
. Kluwer Academic 3. two layer channel routing algorithms. Sequential synthesis 14 hours UNIT-II VLSI automation Algorithms: Partitioning: problem formulation. Steiner Tree based algorithms. Binary Decision Diagram. 2002. Maze routing algorithm. ITE graphs. Scheduling algorithms. Group migration algorithms. Kluwer Academic Publisher. classification of partitioning algorithms. ROBDD. General & channel pin assignment 14 hours UNIT-III Global Routing: Problem formulation. line probe algorithm. two dimension based compaction. hierarchical compaction
TEXT BOOK/ REFERENCE BOOKS
1. 2. simulation base placement algorithms. other placement algorithms. one-dimensional compaction. Second edition 5. Nikil Dutt and Allen Wu “High Level Synthesis”. Second edition. “Introduction to CAD for VLSI”. floor planning algorithms for mixed block & cell design. constrained & unconstrained via minimization 7 hours UNIT-IV Compaction: problem formulation. constraint based floor planning. single layer routing algorithms. Trimburger. Deniel Gajski. allocation algorithms Logic synthesis & verification: Introduction to combinational logic synthesis. two level synthesis. CDFG representation. KAP. and switchbox routing algorithms Over the cell routing & via minimization: two layers over the cell routers. Christophn Meinel & Thorsten Theobold. floor planning & pin assignment: problem formulation. ILP based approaches Detailed routing: problem formulation. 4. simulated annealing & evolution. classification of global routing algorithms. Cube representation. “Algorithms for VLSI Physical Design Automation”.EEC7205
CAD TOOLS FOR VLSI DESIGN
10 hours UNIT-I High level Synthesis.
Current mirrors. Pearson Education (Asia) Pte. Second Edition 3. Sung Mo Kang & Yosuf Lederabic Law. Transmission Gate. Eshragian. scaling factor. “Basic VLSI Design” PHI 3rd Edition (original Edition – 1994) 4. basic CMOS technology. Wolf. small signal AC Characteristics. CMOS\SOS technology.Introduction . BiCMOS inverter 10 hours UNIT-II CMOS Process Technology: Lambda Based Design rules. static load MOS inverters. inverter delays . 2. design rules and layout. “Modern VLSI design: System on Silicon” Pearson Education. Domino CMOS structure and design. stick diagram. mask feints. multilayer inter connect) . resistor .EEC7206
CMOS VLSI DESIGN
UNIT-I 10 hours MOS Transistor Theory: n MOS / p MOS transistor. tunneling. clocked storage elements
TEXT BOOK/ REFERENCE BOOKS
1. Circuit elements. driving capacitive loads.” 2nd edition.Introduction. symbolic diagram. Single Amplifier. complex logic circuits. UNIT-V 10 hours Dynamic CMOS and Clocking: Introduction. punch through. Charge sharing. noise margin. Channel length modulation. CMOS logic circuits with a MOS load. Ltd. CMOS\bulk technology. Neil Weste and K. CMOS inverter. CMOS D latch and triggered Flip Flop.clock generation. Mobility variation. Dynamic CMOS circuit techniques 5 hours UNIT-IV CMOS Analog Design: Introduction. tristate inverter.. sub threshold region. SR latch Circuit. “Principles of CMOS VLSI Design: A System Perspective. Voltage boot strapping synchronous dynamic circuits techniques. Wayne. transmission gate. interconnects. βn / βp ratio. Behavior of hi stable elements. Differential Amplifier. advantages of CMOS over NMOS. principles of pass transistor circuits. Clocking. capacitor. Current CMOS enhancement (oxide isolation. refractory gate. semiconductor Technology overview. propagate delays. Douglas A Pucknell & Kamran Eshragian . Sequential MOS logic Circuits .. MOS mask layer. clock distribution. threshold voltage equation. “CMOS Digital Integrated Circuits: Analysis and Design”. hot electron effect MOS models. latch up in bulk CMOS. LDD. CMOS logic circuits. McGraw-Hill (Third Edition)
. basis of cross operational amplifier. 2000. scaling of MOS circuits. clocked latch and Flip Flop Circuits. Band gap references. sheet resistance & standard unit capacitance concepts delay unit time. differential inverter. static CMOS design. p well / n well / twin well process. 10 hours UNIT-III Basics of Digital CMOS Design: Combinational MOS Logic circuits-Introduction. Dynamic Logic Circuits . body effect. MOS device design equation.
Arithmetic Operator. multi stage cells. connections. Back annotation Programmable ASIC: programmable ASIC logic cell. Netlist. Programmable logic device. I/O cell. Cell Compilers 15 hours UNIT-I ASIC Library Design: Logical effort: practicing delay. ASIC I/O cell 15 hours UNIT-III A Brief Introduction to Low Level Design Language: an introduction to EDIF. optimum delay. 2. I/O and power planning. Icons & Symbols. M.J.France. PLA Tools. Introduction to Synthesis and Simulation. Special Routing. ASIC Construction Floor Planning and Placement And Routing: Physical Design.“Application – Specific Integrated Circuits” – Pearson Education. FPGA design flow. 1994.Smith. Standard Cell based ASIC. Channeled gate array. Gate array based ASIC.
. optimum no. screener. Schematic. System Partitioning. Jose E. Names. The cell library. Channel less gate array. Multiplier. ASIC cell libraries Data Logic Cells: Data Path Elements. Circuit Extraction and DRC. Semi custom ASICS. CAD Tools. Half gate ASIC. schematic entry for ASIC’S. . library cell design. clock planning. Prentice Hall. vectored instances and buses. Physical Design flow global Routing. of stages. Time driven placement methods. Edit in place attributes.EEC7207
15 hours UNIT-I Introduction: Full Custom with ASIC. Estimating ASIC size. Local Routing. Low-Level Design Entry: Schematic Entry: Hierarchical design. iterative placement improvement. partitioning methods. an introduction to CFI designs representation. Floor planning tools. **Note All Designs Will Be Based On VHDL
TEXT BOOK/ REFERENCE BOOKS
1. placement algorithms. structured get array. “Design of Analog-Digital VLSI Circuits for Telecommunication and signal processing”. Yannis Tsividis. Detail Routing. Nets. Adders. 2003.S . logical area and logical efficiency logical paths.
signal entropy. precomputation logic Low power Architecture & Systems: Power & performance management. Emerging Low power approaches. Technology & Device innovation 10 hours UNIT-II Power estimation. architecture level analysis. high capacitance nodes. flow graph transformation. 1997
. gate level logic simulation. Sources of power dissipation on Digital Integrated circuits. low power digital cells library Logic level: Gate reorganization. “Practical Low Power Digital VLSI Design”. Sharat Prasad. Transistor sizing & gate oxide thickness. Yeap. “Low-Power CMOS VLSI Circuit Design” Wiley. Pedram. design flow. chip & package co design of clock network 5 hours UNIT-IV Algorithm & Architectural Level Methodologies: Introduction. state machine encoding. Kaushik Roy. logic encoding. data correlation analysis in DSP systems. gate level capacitance estimation. parallel architecture with voltage reduction. 18 hours UNIT-III Low Power Design Circuit level: Power consumption in circuits. Simulation Power analysis: SPICE circuit simulators. Flip Flops & Latches design.
TEXT BOOK/ REFERENCE BOOKS
1. switching activity reduction. Monte Carlo simulation. KAP. Zero skew Vs tolerable skew. 2002 3. probability & frequency. Algorithmic level analysis & optimization. 2000 2. single driver Vs distributed buffers. Impact of technology Scaling. low power arithmetic components. Low power Clock Distribution: Power dissipation in clock distribution. Gary K. signal gating.EEC7208
LOW POWER VLSI DESIGN
3-0-0 Credits 3
UNIT-I 12 hours Introduction : Need for low power VLSI chips. low power memory design. “Low Power Design Methodologies” Kluwer Academic. Architectural level estimation & synthesis. Probabilistic power analysis: Random logic signals. Physics of power dissipation in CMOS devices. Rabaey. probabilistic power analysis techniques. static state power. capacitive power estimation. Device & Technology Impact on Low Power: Dynamic dissipation in CMOS.
Allen. “CMOS: Circuit Design. E. Wilson current source and Regulated Cascode current source. Jacob Baker. Boyce. Common gate amplifier. 15 hours UNIT-II Common Source Amplifier : with resistive load. 2001 2. Baker. Switched capacitor filters. Frequency response of amplifiers. DC and AC response.EEC7209 DESIGN OF ANALOG & MIXED MODE VLSI CIRCUITS
3-0-0 Credits 3
UNIT-I 8 hours Introduction to CMOS Analog Circuits : MOS transistor DC and AC small signal parameters from large signal model. Comparator. diode load and current source load. Offset effects. 15 hours UNIT-III Differential Amplifier. Op-Amp. PLL. Li. PSRR. Oscillator. Source follower. Design of 2 stage Op-Amp. Noise. Mixer. RF amplifier. 2000 4. Sampled data circuits.
TEXT BOOK/ REFERENCE BOOKS
1. “CMOS Analog circuit Design”
. 2008 3. Sample and Hold.. 9 hours UNIT-IV Sense Amplifier. slew rate. Razavi B. Layout and Simulation”. Holberg. DAC. R. Prentice Hall of India. ADC. Band gap reference. Douglas R. Cascode amplifier. “Design of Analog CMOS Integrated Circuits”. Matching.”CMOS: Mixed-Signal Circuit Dedsign”. Current source/sink/mirror. Folded Cascode. McGraw Hill. Gilbert cell.John Wiley. Frequency compensation.
other placement algorithms. Hardware models for High-level synthesis.EEC7210
ALGORITHMS FOR VLSI DESIGN
3-0-0 Credits: 3
UNIT-I 8 hours Logic Synthesis & Verification: Introduction to combinational logic synthesis. Group migration algorithms. Kluwer Academic publisher. simulated annealing & evolution. single layer routing algorithms. 2002
. “Algorithms for VLSI physical design Automation”. floor planning algorithms for mixed block & cell design. ILP based approaches Detailed Routing: problem formulation. Kluwer Academic Publisher. “Introduction to CAD for VLSI”. Trimburger. one-dimensional compaction. KAP. 3. Naveed Shervani. Steiner Tree based algorithms. classification of routing algorithms. Maze routing algorithm. constrained & unconstrained via minimization 7 hours UNIT-IV Compaction: problem formulation. Binary Decision Diagram. 2. two layer channel routing algorithms. Second edition. Second edition 4. classification of partitioning algorithms. line probe algorithm. hierarchical compaction
TEXT BOOK/ REFERENCE BOOKS
1. General & channel pin assignment 15 hours UNIT-III Global Routing: Problem formulation. 15 hours UNIT-II VLSI Automation Algorithms: Partitioning: problem formulation. and switchbox routing algorithms Over The Cell Routing & Via Minimization: two layers over the cell routers. classification of global routing algorithms. simulation base placement algorithms. 2002. Floor Planning & Pin Assignment: problem formulation. Rolf Drechsheler : “Evolutionary Algorithm for VLSI”. constraint based floor planning. other partitioning algorithms Placement. two dimension based compaction. three layer channel routing algorithms. Christophn Meinel & Thorsten Theobold. “Algorithm and Data Structures for VLSI Design”.
“Principles of Testing Electronic Systems”. 1994 2. Kluwer Academic Publishers. Bushnell and V. Test automation. Breuer.Kropf. “Digital Systems Testing and Testable Design” Piscataway. D. Fault models. M. Agarwal. Memory and Mixed-Signal VLSI Circuits". "System-on-a-Chip Verification-Methodology and Techniques". Samiha Mourad and Yervant Zorian. Abramovici. UNIT-IV 15 hours Design Verification Techniques based on simulation. Singh. Test interface and boundary scan. A. D. 2001. A.
TEXT BOOK/ REFERENCE BOOKS
1. Design for testability. embedded cores and SOCs 10 hours UNIT-II Fundamentals of VLSI testing. Automatic test pattern generation. Friedman. Issues in test and verification of complex chips. Rashinkar. analytical and formal approaches. M. Iddq testing. 2000 3. New Jersey: IEEE Press. Basics of equivalence checking and model checking. 5. "Essentials of Electronic Testing for Digital. T. 2000. 10 hours UNIT-III System Testing and test for SOCs. Scan design. Kluwer Academic Publishers. Formal verification. Timing verification. Delay fault testing. Paterson and L. Wiley (2000). BIST for testing of logic and memories. M.
. Functional verification. Springer Verlag. 4. "Introduction to Formal Hardware Verification".EEC7211
VLSI TESTING AND VERIFICATION
3-0-0 Credits 3
UNIT-I 10 hours Introduction: Scope of testing and verification in VLSI design process. P.
dynamic CMOS design. speed and power considerations. energy & power delay product. David A. 2007 7. MGH. 3.. SRAM. Behzad Razavi. Analysis and Design of Digital Integrated Circuits. power consumption. 2001. McGraw-Hill Professional. Memory Design concepts. . McGraw-Hill. Domino logic and its derivatives. Philip Allen & Douglas Holberg. static and dynamic power dissipation. 2004 6.Analysis & Design. 12 hours UNIT-II Logical effort for transistor sizing. 2002. and Resve A. sizing chain of inverters. NORA CMOS. and D. 2003 4. Second Edition. Third Edition. W. C2MOS. TEXT BOOK/ REFERENCE BOOKS 1.A Design Perspective. IC layout basics: A practical guide. CMOS Digital Integrated Circuits . CMOS circuit design. Christopher Saint and Judy Saint. pseudo NMOS inverter. PTL. DPTL & Transmission gate logic. Jan M Rabaey. Sung-Mo Kang & Yusuf Leblebici. Complementary CMOS.EEC7212
Advanced Digital and Analog Circuit Design
UNIT-I 12 hours Static CMOS design. Saleh. R. Boyce. Third Ed. Baker. John Wiley and Sons.ring oscillators – LC oscillators – colpitts and one-port oscillators – voltage controlled oscillators – tuning in oscillators. CMOS Analog Circuit Design.Prentice Hall. 2005 5. E. and simulation. Design of Analog CMOS Integrated Circuit. H. DRAM 12 hours UNIT-III MOS differential amplifiers – common mode response – differential pair with MOS loads – Noise in differential pairCMOS operational amplifiers . Analog Integrated Circuit Design. Li. DCVSL. WileyIEEE Press. propagation delay. J. Jackson. Nulling resistor compensation. Digital Integrated Circuits . layout. Hodges. static properties. Oxford University Press. Tata-Mc GrawHill. David A Johns & Ken Martin. Horace G. TSPC registers. 2. 2001
.One-stage op-amps and two stage op-amps –gain boosting – Miller. 9 hours UNIT-III CMOS oscillators . latch up effect. 2002. Elmore delay model.
5.K.Edde. VOL .Skolink – Introduction to Radar System. Technology. PH.Y. Hand book of Microwave Technology . Lumped planar components like capacitor. McGraw Hill 7. Inverters.Prentice Hall 8. transmission parameters and S-parameters. B. Quarter wavelength transformer. B. IMPATT diodes. Analysis of these components using the S-parameters. John Wiley. Sparameter analysis of the microwave circuits. Branch line coupler. Y. Konishi. 6.I. Conversion of Z. Transfer function of a transmission line section. Marcel Dekker. Razavi . 4. Power divider. Design of microwave planar filters. Richard transformation and Kurda identities. 2.
TEXT BOOK/ REFERENCE BOOKS
1. Koul . B.K. phase shifters and delay lines.Modern Radar Systems Analysis – Artech House
. 10 hours UNIT-IV Planar Non reciprocal devices: Circulator. directional coupler. Gunn diodes. filters. MEMS technology based microwave components like switches. Microwave Circuit Analysis and Amplifier Design . hybrid ring coupler. 3. 10 hours UNIT-II Analysis of two ports and multiports network by using Z. Bhat & S.EEC7213
Passive Microwave Devices & Circuits
UNIT-I 10 hours The transmission line section as a basic component. delay lines and phase shifters. multi section transformer matching section. Y.I. S. inductor and balun. RF Micro – Electronics. Principles. T.Ishii. Microwave integrated circuit . Application of Thevenin’s theorem to a transmission line. D. T and PI representation of a transmission line section.Batras. PH. Stripline – Loke transmission lines for MICS. Academic press.Radar. Liao . Matching networks: Reactive matching network using the lumped elements. Y and transmission matrix.Application. M. 15 hours UNIT-III Inter valley Scattering.
UNIT-II Aperture Antennas 12 hours
Fields as sources of radiation. 1997 Grish Kumar and K. polarization. TEXT BOOK/ REFERENCE BOOKS
1. McGraw Hill. Patch arrays. John Wiley. Planar multiresonator Microstrip antenna. “Microstrip Antenna”. radiation resistance . log-periodic Microstrip configurations. General formulation for the far fields. TMH. 6. Babinet's principle. “Antenna Theory and Design”.Lee.Ray. “Microstrip Antenna Theory and Design”. McGraw Hill. printed dipole antenna. Radiation characteristics. comparison with simulators. Feeding Techniques.
7. cavity model. A. 9. James et. parameters and applications of different shaped Microstrip Antennas.Collin. efficiency.Bahl. Horn Antennas: Types of horns and their uses. Review of Broadband techniques for Microstrip Antennas. MOM. Compact broadband MSA.J. “Principles of Antenna Theory”. Al. 3. 1981. diploes. 2003. John Wiley and Sons Inc. 2. broadband planar monopole antenna.
UNIT-IV Broadband Printed Antennas
Radiation mechanism. return loss. Wiley. and measured data for simple antennas. The open-ended rectangular waveguide.Bhartia. Slot Antennas: Slot in a ground plane. P. Method of analysis: transmission line model. The E-plane sectoral horn. IEEE. 4. Analysis and synthesis of simple linear arrays.
. “Broadband Microstrip Antenna”. Microstrip – fed slot antenna.
C. Advantages. J.EEC7214
ANTENNA THEORY & DESIGN
3-0-0 Credits 3
UNIT-I Antenna Fundamentals and Definitions
Antennas: radiation concepts. Kraus “Antennas”. 2003. Artech House. monopoles. Field-equivalence principles. gain. FEM. FDTD. Artech House. Design parameters. Disadvantages. Parabolic Reflector: Geometrical relations.P.F. Stutzman and Thiele. J. K. Aperture blockage. 8. 2ndEd. Applications. Multilayer Microstrip antenna. Coplanar Waveguide – fed Patches.Sainati. “CAD of Microstrip Antennas for wireless applications”. Feeding arrangements.E. 5. Third Edition.
UNIT-III Microstrip Antennas
Microstrip patch antennas. directivity.theory. Antenna parameters: bandwidth. Robert A. Balanis: “Antenna Theory Analysis and Design”. R. Coplanar Waveguide – fed slot antennas. aperture field and radiation pattern.R. Aperture efficiency and directivity. “Antennas and Radio Wave Propagation”. 2nd Edition. Waveguide coupling by aperture. input impedance.
“Optical Fiber Communications”. HIPPI. Receiver. impact of transparency. 15 hours UNIT-III Transmission System Engineering: system model. Gerd Keiser. Bit error rates.E. Alarm management. LTD and RWA problems. optical sources. ideal receivers. “Optical Networks”. “Fiber Optics Communication Systems”. optical cross connectors.
8 hours UNIT-II Modulation — Demodulation: Formats. Optical preamplifier. configuration management. cost trade offs. management protocols. layers. “Optical Networks”. M. WDM Network Elements: Optical line terminal optical line amplifiers.
John M. 1997 P. Quality of service and flow control. Prentice Hall. adaptation layers. Green. Pearson edition. N Sivaranjan. SONET/SDH. multiplexers. 2000. Noise considerations. wavelength conversion. statistical dimensioning model. “Optical Fiber Communication”.EEC7215
OPTICAL COMMUNICATION & NETWORKING
3-0-0 Credits 3
UNIT-I 12 hours Introduction: Propagation of signals in optical fiber. detectors. optical trace. Routing and wavelength assignment. Senior. Kauffman Publishers. 4. nonlinear effects. 2000. Different optical amplifiers. Coherent detection. 5. filters. G. 3. different losses. Agarawal. circulators. 2. interferometers. power penalty. multiplexing. Optical Components: Couplers. Information model. 1994
. 10 hours UNIT-IV Control and Management: network management functions. 1 991. ATM functions. Practical detection receivers. isolators. solitons. gratings. MGH. Rajiv Ramswami. frame structure. Transmitter. WDM network design. John Wiley NewYork. BER measurement.
TEXT BOOK/ REFERENCE BOOKS
1. Optical Networks: Client layers of optical layer. layers within optical layer performance and fault management. amplifiers. management frame work. P. ESCON. Dispersion.
types of small scale fading. BER of BPSK. Ltd. polarization diversity . Kamilo Feher. 2004.space-time multi-user detection and turbo multi-user detection. 2
edition. MSK. Pearson Education.multi-user detection. Basic propagation mechanisms. Space Diversity-Combining and switching methods. Impulse response model of a multi-path channel. Small scale multipath propagation. Multiple Access Techniques: FDMA. subspace tracking algorithms. channel assignment strategies. packet Radio UNIT-II: RADIO PROPAGATION: Free space propagation model. Andrea Goldsmith. Average Probability of Error-combined outage DIFFERENT GENERATION NETWORK STANDARDS GSM architecture. statistical models for multi-path fading channels. GMSK M-ary PSK.Capacity of non-coherent MIMO channels C/N. IS-95 and IS-136 architecture radio aspects and services. 2004. radio aspects and functionality. performance of blind multi-user detector.EEC7216
UNIT-I: CELLULAR CONCEPT: System Fundamentals: Frequency reuse. Time Diversity . interference and system capacity. “IS-95 CDMA and cdma2000. TDMA. UNIT-III: Diversity techniques: Concepts of Diversity branch and signal paths. 5.
TEXT BOOK/ REFERENCE BOOKS 1. "Wireless Digital Communications: Modulation and Spread Spectrum Techniques”. Pearson Education (Asia) Pte. SDMA. 2004. indoor propagation models. AWGN and fading channels . handoff strategies. W-CDMA System. space-time multi-user detector and turbo multi-user detector in multi-path channel UNIT-IV: Performance measurements Capacity and Information rates of noisy. Ltd.
. improving coverage and capacity in cellular systems. Small scale multi-path measurements. “Wireless Communications: Principles and Practice”. QPSK.” Pearson Education (Asia) P. 2. Theodore S. 4. Rappaport. Xiaodong Wang and Vincent Poor. “Wireless Communication Systems: Advanced Techniques for Signal Reception”.Mary QAM on fading channel. Introduction to 4G networks. radio aspects and services. 2005.OFDMA and LTE. Frequency Diversity. parameters of mobile multi-path channels. Vijay K. spread spectrum multiple access. Prentice Hall of India. C/I performance of fading channels. blind multi-user detection.Capacity of MIMO channels .MIMO diversity techniques Signal reception: Signal model for wireless Channels. “Wireless Communication”. basic receiver signal processing for RAKE Receiver. Garg. outdoor propagation models. 3. CDMA 2000 architecture. 2003. practical link budget design using path loss models.
Prentice Hall of India. Rayleigh and Riccean distributions.
Turbo coding and space time coding UNIT-III: Communication through band limited linear filter channels: Optimum Receiver for Signals with Random Phase in AWGN Channel. OFDM. 3. FQPSK. slowly fading channel. Pearson Education 2002. “CDMA: Principles of Spread Spectrum Communications. Maximum Likelihood Decoding of Convolutional codes. Digital signal over a frequency-selective.” 2nd edition. Recursive least squares algorithms for adaptive equalization.Lindsey. the effect of signal characteristics on the choice of a channel model. Bernard Sklar. Various Good Codes. 5th edition.” Prentice Hall. USA. Synchronisation Signal parameter estimation-carrier phase estimation-symbol timing estimation-joint estimation of carrier phase and symbol timing –Performance characteristics of ML estimators
TEXT BOOK/ REFERENCE BOOKS
1. Linear equalization.Grant. diversity techniques for fading multi-path channels. 5. Viterbi decoding. 2008. Proakis and Masoud Salehi. Hamming Distance Measures for Convolutional Codes. “Digital Communication Techniques: Signal Design and Detection”. Decision-feedback equalization. M-QAM. “Digital Communications: Fundamentals and Applications. frequencyNonselective. 6.QAM. “Digital Modulation and Coding. 1995
. self recovering (blind) equalization.Hinedi and William C. DPSK. . UNIT-II: Coding Techniques: Review of block codes.coded signals. Ian A. 2. Wilson.. coherent and non coherent detection -QPSK. coded wave forms for fading channels. Pearson Education (Asia). Performance of the Optimum Receiver for Memory-less Modulation-Optimum Receiver for CPM and CPFSK Signals -Optimum Receiver for Signals Corrupted by AWGN. Pearson Education 2008 4. Error Probability with Maximum Likelihood Decoding of Convolutional Codes. Marvin K.” First Indian Reprint. GMSK. 2003. reduced complexity ML detectors. 2nd edition. Iterative equalization and decoding-Turbo equalization. Andrew J. adaptive decision feedback equalizer.Simon M. Viterbi. Communication Through Fading Multi-Path Channels: Characterization of fading multi-path channels. 2009. multiple antenna systems.Glover and Peter M. “Digital Communications”.EEC7217
ADVANCED DIGITAL COMMUNICATIONS
3-0-0 Credits 3
UNIT-I: Digital Modulation Techniques: Introduction to digital communication system. Optimum receiver for channels with ISI and AWGN. slowly fading channel. “Digital Communications”. UNIT-IV: Adaptive Equalization: Adaptive linear equalizer. Trellis Coding with Expanded Signal Sets for Band-limited Channels. Prentice Hall of India. adaptive equalization of Trellis. Communication channels –their mathematical model-their characteristics. Sequential Decoding and Feedback Decoding. Convolutional Codes. Stephen G. McGraw Hill. John G.
“RF Circuit Design: “Theory and Applications”. RF/MW Oscillator Design.
TEXT BOOK/ REFERENCE BOOKS
1. C. Radmanesh. UNIT-I 10 hours Basic Considerations in Active Networks: Stability Consideration in Active networks. Design of Matching networks. McGraw Hill. 15 hours UNIT-I Active Networks: Linear and Nonlinear Design: RF/MW Amplifiers Small Signal Design. 2004. Reinhold Ludwig and Pavel Bretchko. Circuit Representations of two port RF/MW networks 10 hours UNIT-II Passive Circuit Design: The Smith Chart. 4. Gain Considerations in Amplifiers. Malcolm R. RF/MW Integrated circuit design. Large Signal Design. Pearson Education (Asia) Pte. 1998. RF Electronics Concepts.. Application of the Smith Chart in Distributed and lumped element circuit applications. 1994. Mohammed Ismail and Terri Fiez. “Radio Frequency and Microwave Electronics Illustrated”. Matthew M. RF/MW Control Circuit Design. Ltd. “Analog VLSI Design . “Analog VLSI Signal and Information Processing”.
. Pearson Education (Asia) Pte. Lan..NMOS and CMOS”.Haskard. Prentice Hall. Mixer Design. May. Noise Considerations in Active Networks. 3. RF/MW Frequency Conversion Rectifier and Detector Design. 2. Ltd.EEC7218
ACTIVE RF AND MICROWAVE CIRCUIT DESIGN
10 hours UNIT-I Wave Propagation in Networks: Introduction to RF/Microwave Concepts and applications. Fundamental Concepts in Wave Propagation. 2004.
integrated parasitic elements at high frequencies and their monolithic implementation 15 hours UNIT-IV RF Circuits Design: Overview of RF Filter design. layout and Simulation”. TMH 1996
. Li. Boyce “CMOS Circuit Design. Basic blocks in RF systems and their VLSI implementation. Direct IF and sub sampled receivers. Noise power and trade off. modeling of the transistors and SPICE model. 3. 10 hours UNIT-III BJT and MOSFET Behavior at RF Frequencies: BJT and MOSFET behavior at RF frequencies.W. “RF Microelectronics” PHI 1998 2. Image reject. PHI 1998. Various RF synthesizer architectures and frequency dividers. B.
TEXT BOOK/ REFERENCE BOOKS
1. Lee “Design of CMOS RF Integrated Circuits” Cambridge University press 1998. Active RF components & modeling. 4. random processes and noise. Basic concepts in RF design: Nonlinearly and Time Variance. Noise performance and limitations of devices. Complexity and Choice of Technology. Design issues in integrated RF filters. “Mixed Analog and Digital Devices and Technology”.Basic topologies VCO and definition of phase noise. Y.working and implementation. Comparison of various techniques for power efficiency. Razavi. Oscillators. Radio frequency Synthesizers. Resonator VCO designs. Tsividis. H. Power Amplifier design. Liberalization techniques.PLLS.E. R. Low noise Amplifier design in various technologies. Jacob Baker. Direct conversion and two-step transmitters RF Testing: RF testing for heterodyne. Matching and Biasing Networks. D. Quadrature and single sideband generators. Homodyne. conversion of gains and distortion 10 hours UNIT-II RF Modulation: Analog and digital modulation of RF circuits. Mobile RF communication and basics of Multiple Access techniques. Coherent and non-coherent detection. Various mixers.EEC7219
CMOS RF CIRCUIT DESIGN
3-0-0 Credits 3
UNIT-I 10 hours Introduction to RF Design and Wireless Technology: Design and Applications. Receiver and Transmitter architectures. Intersymbol interference. Thomas H. Sensitivity and dynamic range.P. Design of Mixers at GHz frequency range.
“Data Networks. Characterization of Optimal Routing. Networks of Transmission Lines. Routing in the Codex Network. M/M/m. and Topological Design.
. Network Algorithms and Shortest Path Routing. 3. Harcourt India Pte.” 2nd edition.
TEXT BOOK/ REFERENCE BOOKS
1. & Morgan Kaufman. J." 2nd edition. Overview of Flow Control in Practice. William Stallings. Ltd. Varaya. Window Flow Control. Walrand and P. M/G/1 System.” Pearson Education (Asia) Pte.EEC7220 MODELING AND SIMULATION OF NETWORKS
3-0-0 Credits: 3
10 hours UNIT-I Delay Models in Data Networks: Queuing Models. “High-Speed Networks and Internets. Broadcasting Routing Information: Coping with Link Failures. Networks of Queues. M/M/1. Splitting Algorithms. 2004. Flow models. Rate Adjustment Algorithms. Feasible Direction Methods for Optimal Routing. “High Performance Communication Networks. Packet Radio Networks. 2000. Prentice Hall of India. Carrier Sensing. 15 hours UNIT-III Routing in Data Networks: Introduction. Optimal Routing. Rate Control Schemes. 2003. M/M/¥. 2. 10 hours UNIT-I Multi-access Communication: Slotted Multi-access and the Aloha System. Dimitri Bertsekas and Robert Gallager. M/M/m/m and other Markov System. Multi-access Reservations. 10 hours UNIT-IV Flow Control: Introduction. Projection Methods for Optimum Routing. Time Reversibility. Ltd.
“Analysis Methods for RF. New York. Wiley Interscience. “Foundations for Microstrip Circuit Design (2/e)”. Technology of MICs: Monolithic and hybrid substrates. I.Koul. North Oxford Academic. and Amarjit Singh. Seegar. “RF/Microwave Circuit Design for Wireless Applications”. 15. vol. Wiley. 3. striplines and slot line characteristics. attenuators and filters design.K. John Wiley.C. J. CRC Press.O. Artech House. design approaches. resistors. Prentice Hall. Mathew N. 6. 2001.. Ravender Goyal. Components and Devices”. Active device technologies. “Stripline Like transmission lines for MICS”. 5. Ulrich L. Wiley. (Butterworth and Chebyshev responses). G. circulator.C. coplanar strips. Realization using Microstriplines and striplines components. “Microwave Amplifiers and Oscillators”. Samuel. Development of Band Pass Filter. 1989. Rohde and David P.1987. Hoffman R. Prentice Hall. Y. multichip module technology.
MIC Filters Design
MICROWAVE INTEGRATED CIRCUITS
12 hours UNIT-I Introduction Planar transmission lines. Components.Hall C. capacitors. Realization using Microstrip lines and strip lines. Micromachined passive components. Boston. “Microwave Integrated Circuits”.N. 10. 1989.K.Bhat and S. John Wiley. Academic Press.
Planar Passive Components
Lumped elements in MICs: Planar Inductors. “Numerical Techniques for Microwave and Millimeter Wave Passive Structures”. 8. John Wiley. multilayer techniques. Liao. “Microwave Circuit Analysis and Amplifier Design”. Prentice.Ishii. Directional Coupler. Microstrip components. “Handbook of Microwave Integrated Circuits”. 2. Microwave and Planar Transmission Line Structures”. 13. 1987..Simons. substrates.Edwards.
. 1975.Gonzalez. “Monolithic MIC. “Handbook of Microwave Technology”. properties .A. T. “Numerical techniques in Electromagnetics”. thin and thick film technologies.Itoh. 7. 1992. microstripline.Nguyen. 1986. design parameters and its applications. “Microwave Transistors and Amplifiers”. Low pass to High Pass. and Systems”. coplanar circuits. Sadiku. R. 2001. 1995. coplanar waveguide. 12. switches. 2000. 11. 2000.
4. Artech House. advantages and applications. Inc.
TEXT BOOK/ REFERENCE BOOKS
1. Gentili. power divider. Band Pass.N. Band stop Transformations. Technology & Design”. Gupta K. B. “Microwave Theory.
MIC Components – Design and Realization
3dB Hybrid Design. “Coplanar Waveguide Circuits. Wiley.
return loss.M. “CAD of Microwave Circuits”. K. full wave analysis. Michiel Steyaert.. Discontinuities.Gupta. Signal Flow graphs and its Applications.Concepts of characteristic impedance. “Design of CMOS RF Integrated Circuits”. equivalent circuits.EEC7222
CAD OF RF AND MICROWAVE CITCUITS
3-0-0 Credits: 3
UNIT-I Review of Basic Microwave Theory 12 hours Transmission Lines and waveguides . matching network design using lumped and distributed elements. 3.. Implementation in simulators. Admittance. filters.Pozar. Rameh Garg. Lee T. maximum gain. 2000. 2004. 2004 Razavi B. “ Microstrip Line and Slot Lines”. input/output VSWR. Generalized S parameters. John Wiley. Transmission Matrix. Modes and evanescent waves.C. design of inductors. constant gain design. 6. Reciprocal Networks. capacitors and resistors. Razavi B.
. 2001 1. Simple printed couplers. 12 hours UNIT-III Planar Transmission Lines Planar transmission lines: Quasi-static analysis. power dividers. 5. and numerical techniques. “Design of Analog CMOS Integrated Circuits”. 3ed. McGraw Hill. 4.. Kluwer Academic Publishers. Pearson Education. Hybrid.. TEXT BOOK/ REFERENCE BOOKS D. standing and propagating waves. “CMOS Wireless Transceiver Design”. “RF Microelectronics”. Implementation in simulators. mismatch factor. 1997 Jan Crols. figure of merit. 9 hours UNIT-IV Lumped and Distributed Elements Passive components in RF technology. design of lumped elements. Gain Consideration in Amplifiers. reflection coefficient. MMICs. Cambridge. Loss less Networks. 12 hours UNIT-II Microwave Network Analysis Microwave Networks. Artech House. 2. “Microwave Engineering”. :Impedance. 1997 7. Impedance Matching and network selection: power gain concept.
magnetic. Active and Non-reciprocal Circuits”. RF impedance matching. thermal. High temperature processes: oxidation. Pearson Education (Asia) Pte. Data recording and display. Matthew M. resistive evaporation. Wave length and frequency. Bit-error rate measurement. e – beam.
TEXT BOOK/ REFERENCE BOOKS 1. Photolithography processes. “RF Circuit Design: “Theory and Applications”. McGraw Hill International Edition. 12 hours UNIT-IV Advances in RF Measurement Techniques Instrumentation concepts and measurement techniques in: Oscilloscopes. RF and DC sputtering processes. circuits and system: acoustic. radiation and smart sensors. Concept of test chip design and process parameter extraction. Radmanesh. EM spectrum. Analysis of a simple circuit in phasor domain. Use of “masks” in IC fabrication. RF/Microwaves versus DC or low AC signals. Chemical etching processes: dry and wet etching. Waveform generators. Network analyzer. 2. Ltd.
. Ltd. “Radio Frequency and Microwave Electronics Illustrated”. Reinhold Ludwig and Pavel Bretchko. S/N measurement Telemetry. 2004. mask design and fabrication.
9 hours UNIT-III Review of RF Measurements Review of measurement and instrumentation basics. 3. Joseph Helszain “Microwave Engineering. 2004. Thin films in IC processing.. Recent advances in RF and Microwave measurement Techniques. devices.. diffusion. Pearson Education (Asia) Pte. 12 hours UNIT -II RF Fabrication Process Concept of process flow in IC fabrication. and annealing. Spectrum analyzers. ultrasonic. Resonant circuits. Mechanical and thermal engineering issues for RF modules/instruments. Lock-in-amplifiers. representative process flow for diode/ MOSFET. Introduction to component basics. optical.EEC7223 FABRICATION & MEASUREMENT TECHNIQUES FOR RF AND MICROWAVE DEVICES
UNIT-I RF Electronics Concepts 12 hours Introduction. Impedance transformers. Three element matching. 1992. electrical. Principles and applications of various sensors used in Characterization of RF materials.
Switched delay lines.V.H. Micromachining to 9 hours improve performance. Micromechanical filters using comb drives. Modeling and design issues of planar inductor. Wiley.K. “RF MEMS: Theory.EEC7224
3-0-0 Credits: 3
9 hours UNIT-I RF MEMS relays and switches Switch parameters. Micromachined transmission lines. and Technology”. 2003
. Limitations. design parameters. Actuation mechanisms. Artech House. 9 hours UNIT-IV MEMS Phase Shifters Types.
TEXT BOOK/ REFERENCE BOOKS 1. Dielectric tunable capacitors. De Los Santos. Design.G.
2. “RFMEMS and their Applications”. Rebeiz. Electrostatic coupled beam structures. 2003.Varadan etal. UNIT-V Micromachined antennas Microstrip antennas. Gap tuning and area tuning capacitors. Coplanar lines. Reconfigurable antennas. 2003.J. Bistable relays and micro actuators. Effect of inductor layout. 3. Dynamics of switching operation. “RF MEMS Circuit Design for Wireless Communications”. UNIT-III Micromachined RF filters 9 hours Modeling of mechanical filters. Electrostatic comb drive. 9 hours UNIT-II MEMS inductors and capacitors Micromachined inductor. Wiley/IEEE Press. Micromachined directional coupler and mixer.
3. “3G wireless networks”. broadband wireless access. security. Prentice Hall. deployment consideration.specification. 2006. energy management. routing.11 and 802.physical layer.fundamentals of UWB. WLL –generic WLL architecture. pricing scheme. C. Clint Smith and Daniel Collins. Interoperability of Wi-Fi and UMTS. ad-hoc wireless internet. Tata Mcgraw Hill. self-organization.
TEXT BOOK/ REFERENCE BOOKS 1. applications of sensor network.16 – Physical layer-MAC layer differences between IEEE 802. data gathering. “Principle of Wireless network. transactionoriented.11 – IEEE 802. TCPs -traditional. comparisons with MANET. 2nd edition. 2005. addressing.operation of UWB systemscomparisons with other technologies. technologies. issues –medium access scheme. Prentice Hall. route optimization. transport layer protocol. Fundamentals of UMTS.Siva Ram Murthy and B. IPv6 advancements. security. snoop. 2nd edition 2005. indirect. “Wireless Communication and Networks”.11a/b/g – software radio-based multimode system. IEEE 802. multicasting.S. middleware protocol group. Application models. Issues. quality of sensor network – coverage and exposure.II Introduction –wireless internet. CSMA/CA. security in mobile IP. EMERGING TECHNOLOGIES 9 hours UNIT. PANS AND MANS 12 hours Fundamentals of WLAN –technical issues. Pearson education. 2nd. 5. IP for wireless domain. advantages and disadvantages. location discovery. network architecture. 2005. mobility. 2007. Pearson education. meghadoot architecture -802. service discovery.16. co-located address. MAC protocols. impact of mobility. IEEE 802. data dissemination. Kaveh Pahlavan and Prashant Krishnamurthy. WIRELESS INTERNET 12 hours UNIT. QoS provisioning.I WIRELESS LANS. mobile. Jochen Schiller. Radio Frequency Identification(RFID). MAC layer mechanism.IV UWB radio communication. Wllliam Stallings.A unified approach”. 2nd edition. zigbee standard. Bluetooth.11 phone.11. 2. design challenges and architecture of wireless sensor network.major issues. handoffs.EEC7225 ADVANCED TECHNIQUES IN WIRELESS NETWORKS 3-0-0 CREDITS:3 UNIT. Wireless Broad band (WiMAX). “Ad-hoc wireless networks-architecture and protocols”. TCP in wireless domain – TCP over wireless .III Introduction. mobile IP – simultaneous binding. . Routing schemes. Manoj.
. “Mobile Communication”. mobile IP variations. multimode 802. 4.layered and clustered. AD-HOC AND WIRELESS SENSOR NETWORK 12 hours UNIT. inefficiency of transport layer and application layer protocol.
carrier synchronization. “Theory and applications of OFDM and CDMA”. guard time and cyclic extensions-windowing –choice of OFDM parameters-OFDM signal processing 12 hours UNIT.EEC7226 OFDM FOR WIRELESS COMMUNICATION
UNIT. 2007. Combination of OFDM and CDMA – MC-CDMA. modulation. TEXT BOOK/ REFERENCE BOOKS 1.Christian Luders. Henrik Schulze. “OFDM for Wireless Multimedia Communication”. “OFDM and MC-CDMA for broadband Multiuser Communication”.IV 12 hours Frequency hopping in OFDMA-OFDMA system description-Channel coding. 2. diversity gain UNIT. sampling-frequency synchronization and ML estimation of timing and frequency offset synchronization. synchronization. coherent detection-one and two dimensional channel estimation . Lajas Hanzo. 2003 3.1 12 hours OFDM Principles-System Model –Generation of sub carrier using IFFT.MT-CDMA and DS-CDMA systems –Difference and OFDMA and MC-CDMA.II FEC coding-Interleaving-QAM-Coded modulation-Synchronisation-Frequency offset estimation.special training symbols-Decision direct channel estimation-differential detection in the time and frequency domain 9 hours UNIT-III MIMO in OFDM system-STBC in OFDM system-STTC in OFDM system-Performance analysis of MIMO-OFDM systems-channel capacity. Artech House. Richard Van Nee and Ramjee Prasad.2005
Prentice Hall. UWB modulation options.I Ultra wideband communication systems: UWB concepts.IV UWB receiver related issues-UWB receiver options-Multiple access interference integration mitigation at the receiver side-Multiple access interference integration mitigation at the transmitter side.pulse modulation and detection techniques –Comparison with conventional pulse detection techniques-Modulation performances in practical conditions. Effect of NBI in UWB systems –avoiding NBI-Cancelling NBI. Siwiak and D. challenges. 2005. Wiley Publications. McKeown. 11 hours UNIT –III Principles and background of UWB multipath propagation channel modeling-Channel Sounding Techniques-UWB statistical –based channel Modeling-Impact of UWB channel on system design. John Wiley and Sons Limited.2006 2. TEXT BOOK/ REFERENCE BOOKS 1. UWB signaling techniques-UWB spectral characteristics.MIMO model for UWB-MIMO channel capacity and diversity gain in fading channels 12 hours UNIT. UWB pulse generation. -Optimal UWB single pulse design-Optimal UWB orthogonal Pulse Design. K. single band versus multiband UWB .EEC7227
ULTRA WIDEBAND WIRELESS COMMUNIATION 3-0-0
11 hours UNIT. “Ultra Wideband Wireless Communication”. S. Ultra-Wideband Radio Technology. 2005 6.ZhiNing Chen and Maria-Gabriella Di Benedetto. “ An Introduction to ultra wideband communication systems”.II UWB sources.Reed. Prentice Hall. Haykin and M.advantages. Moher. Ultra-Wideband Communications: Fundamentals and Applications. 11 hours UNIT. Modern Wireless Communication. Faranak Nekoogar. Pearson Education.Springer 2009 5. FCC emission limits and UWB applications. 2004 3. “Introduction to Ultra Wideband for Wireless communications”. Huseyin Arslan. 4.
. Homayoun Nikookar and Ramjee Prasad. Jeffrey H. 2005.
scattering theory. Taur and T. short channel effects. eBook ISBN: 0-306-47622-3. ISBN 978-0387-71751-7 e-ISBN 978-0-387-71752-4. Fundamentals of Modern VLSI DevicesCambridge University Press. silicon nano wires.H. FINFET. transconductance.
. triple-plus gate. mobility various models. device characteristics. 2004. volume inversion. Print ISBN: 1-4020-7018-7. 4. short channel and narrow channel MOSFET. 2Y. FinFETs and Other Multi-Gate Transistors Springer. scaling of MOSFET. MOSFET physics in terms of scattering. Kluwer Academic Publishers. 2. transmission coefficient under low and high drain biases. Planar Double-Gate Transistor. high-k gate dielectrics. 2009.Pierrie Colinge. short channel effects. source and drain resistance 11 hours UNIT-II The SOI MOSFE: comparison of capacitances with bulk MOSFET. Jean-Pierre Colinge. 5. FINFET UNIT-IV: 12 hours Physical view of nano scale MOSFET. mobility. I-V characteristics of non-degenerate and degenerate carrier statistics TEXT BOOK/ REFERENCE BOOKS 1. threshold effect. substrate bias. drain conductance. Jean-Pierre Colinge. transconductance. triple gate. ultra shallow junctions. 1998. ISBN 978-1-4020-9327-2. current-voltage characteristics: Lim&Fossum model and C-∞ model. Floating body and parasitic BJT effects. impact ionization and high field effects: Kink effect and Hot-carrier degradation. PD and FD SOI devices. Springer. drain current and subthreshold characteristics.EEC7228 Silicon On Insulator MOS Devices and Multiple Gate Devices 3-0-0 Credits: 3 UNIT-I 11 hours Review of MOS device: band diagrams. GAA. self-heating 11 hours UNIT-III Multiple gate SOI MOSFETs: double gate. Silicon-on-insulator Technology: Materials to VLSI Kluwer Academic publishers group. mobility. Nator’s theory of the ballistic MOSFET. ISBN: 0-521-55959-6 3. Amara Amara and Olivier Rozeau. role of quantum capacitance. From Technology to Circuit.e-ISBN 978-1-4020-9341-8. low field mobility. Ning. Jean. Physics of Semiconductor Devices. high field mobility. 2008. evaluation of the I-V characteristics.
Method of FiniteDifferences. Atom to Transistor: Physics of Ohm's Law. As a Conceptual Tool. Self Energy. Basis Functions: As a Computatinal Tool. Inflow/Outflow. Transmission and Examples. Level Broadening: Open Systems and Local Density of States. Quantum vs. Density of States. Dots and Nano-Tubes. Summary/Towards Ohm's Law. Datta. Minimum Resistance of a Wire. Cambridge University Press. Electrostatic Capacitance. Subbands: Quantum Wells. What Makes Electrons Flow?.
. Coherent 15 hours UNIT-III: Transport: Overview. Charging/CoulombBlockade. S. Non-Equilibrium Density Matrix. S. 3-D Solids. 2. Lifetime. Prelude to Sub-Bands. 1995. The Quantum of Conductance. Density Matrix I. Self Consistent Field: Basic Concept. Band Structure: Toy Examples.EEC7229
15 hours UNIT-I Energy Level Diagram. Relation to the Multi-Electron Picture. Datta. Examples. Schrödinger Equation: Basic Concepts. Irreversibility. Emission and Absorption. Coulomb Blockade. Paperback Edition 1997. Spin
TEXT BOOKS/REFERENCE BOOKS 1. 15 hours UNIT-II: NEGF. Cambridge University Press. Self Consistent Field Method and Its Limitations.Bonding. Radiative Transitions Phonons. Beyond 1-D. Quantum Transport: Atom to Transistor. Electron Density. Electronic Transport in Mesoscopic Systems. Capacitance: Model Hamiltonian. Density Matrix II. Radiative Lifetime. Inflow/Outflow. Non-Coherent Transport: Why does an Atom Emit Light?. Wires.
machine model. Physics of Semiconductor Devices. QY. Theory of Soft and Hard Breakdown.F. Kinetics of Trap Generation. Statistics of Oxide Breakdown: Cell percolation model. 1996. Fundamentals of Modern VLSI DevicesCambridge University Press.EEC7230
RELIABILITY OF SEMICONDUCTOR DEVICES
UNIT-I: 10 hours Introduction to Reliability Physics. Ning. John Wiley and Sons. Zener break down. generation and recombination of carriers. Radiation and hard errors. K. Electro migration 5 hours UNIT-V Introduction to Electro static discharge (ESB). Print ISBN: 1-4020-7018-7
. and Duty Cycle Dependence. Dispersive vs. Arrhenius Diffusion. Statistics of Softbreakdown by Markov Chain. human body model. Soft error due to radiation effects. Spatial and Temporal Characteristics of dielectric breakdown. and Floating Probe. Avalanche break down. Steven H. Subthreshold and linear drain current Measurements. Pierret. methods to contain ESD TEXT BOOKS/REFERENCE BOOKS 1. 1998. Characterization of Interface Traps. Charge-pumping. Spin-Dependent Recombination 10 hours UNIT-III: Breakdown mechanisms of thick dielectrics and thin dielectrics. Reliability definition. 2002. Off-State Hot Carrier Degradation . diffusion length. R. ISBN: ISBN 0201-54393-1 3. Theory of Thick dielectrics. life time of carriers. PDF 10 hours UNIT-II: Kinetics of Negative Bias Temperature Instability: Stress Phase. Y. Stress migration.H. and GIDL Techniques for Interface Traps. ESD: Physics and Devices 2004. SILC. velocity saturation. DC-IV. Voltage Dependence of Trap Generation: Lucky Electron Model. D. Kluwer Academic Publishers. Types of Defects in a Semiconductor. critical field in a dielectric. Field-dependence of TDDB. Mathematics of Reliability: Weibull statistics. ISBN: 0-471-73906-5 4. Theory of Radiation Damage. ISBN: 0-521-55959-6 2. Ltd ISBN: 0-47084753-0 5. Freq. MOSFET scaling. John Wiley & Sons. On-State Hot Carrier Degradation. Addison-Wesley. 1996. Circuit Implications of NBTI Scaling Theory of Hot Carrier Degradation. Semiconductor Device Fundamentals. Semiconductor Material and Device Characterization. Taur and T. Sources of radiation flux and its characteristics. Hot electron effect. Jean-Pierre Colinge. Field Acceleration of Negative Bias Temperature Instability. error correction. eBook ISBN: 0-306-47622-3. GIDL. TDDB and Circuits. Schroder. Independence. Radiation. Time-Dependent Dielectric Breakdown. NBTI: Relaxation. 10 hours UNIT-IV: Measurement Techniques: VT. Voldman. dielectrics.
8. SiC. ON-resistances and their dependence on the device geometry and size. Introduction to Semiconductor Technology: GaAs and Related Compounds. High Speed Semiconductor Devices. Sams & Co... important parameters governing the high power performance of devices and circuits: Break down voltage. Howard W. 3. InP. Chang. London.M. AlGaAs. doping concentration and temperature. as compared to silicon based devices. ISBN 978-3-540-71890-1. Technology and Devices. Band gap engineering. Velocity overshoot effects and the related advantages of GaAs. Avishay Katz. G. Modern GaAs Processing Methods. InP and GaN based devices for high speed operation. device geometries.EEC7231
HIGH SPEED SEMICONDUCTOR DEVICES
Unit-I:Important parameters governing the high speed performance of devices and circuits: Transit time of charge carriers. 6. electrostatic calculations. doping concentration and temperature Unit-II:Materials properties: Merits of III –V binary and ternary compound semiconductors (GaAs. Artech (1990). 5. Sub threshold characteristics.C.ISBN 978-086341-743-6. 1990. Cheng T. Schottky barrier diode. Principle of operation and the unique features of HEMT. 1992. S. ISBN 0-89006-343-5. The Institution of Engineering and Technology. Metal semiconductor contacts. John Wiley & Sons. F. Unit-IV:High Electron Mobility Transistors (HEMT): Hetero-junction devices.
. short channel effects and the performance of scaled down devices. Springer 2008. resistances. SiGe HBTs and the concept of strained layer devices. Resonant-tunnelling hot electron transistors TEXT BOOKS/REFERENCE BOOKS 1. 7. Unit-III:Metal semiconductor contacts and Metal Insulator Semiconductor and MOS devices: Native oxides of Compound semiconductors for MOS devices and the interface state density related issues. outline of the crystal structure. SiGe and GaAs Integrated Circuits. Sandip Tiwari. carrier mobility. C. Artech House. Ruediger Quay. junction capacitances. Ed. Compound Semiconductor Device Physics. Ed. 1990. doping. Gallium Arsenide Technology. Ralph E. electric field characteristics of materials and device processing techniques. Maiti. 2. 1985.K. dopants and electrical properties such as carrier mobility. High Frequency resonant – tunnelling devices. homo and hetro junctions. Sze. D. 2007. silicon-germanium alloys and silicon carbide for high speed devices. 4. velocity versus electric field characteristics of these materials. Metal semiconductor Field Effect Transistors (MESFETs): Pinch off voltage and threshold voltage of MESFETs. Indium Phosphide and Related materials: Processing. Gallium Nitride Electronics. United Kingdom. Armstrong. TCAD for Si.Y.A. Kai. GaN etc. C. Band diagrams.. Wiley. InGaAs/InP HEMT structures: Hetero junction Bipolar transistors (HBTs): Principle of operation and the benefits of hetero junction BJT for high speed applications. Material and device process technique with these III-V and IV – IV semiconductors. Wiley (1990) ISBN 0-471-62307-5. Wang. InGaAs.). David K. Ferry. GaAs High-Speed Devices: Physics. GaAs and InP based HBT device structure and the surface passivation for stable high gain high frequency performance. characteristics and analysis of drain current. different SiC structures. Academic Press (1991). Technology and Circuit Applications. ISBN 012-691740-X. The generic Modulation Doped FET(MODFET) structure for high electron mobility realization. 1994. Williams.
H. ISBN 978-3-540-21081-8. 1999.J. High speed semiconductor devices. Coulomb staircase. 1990. 4. Cambridge University Press. ISBN 978-3-540-22050-3. Artech House Publishers. Sze (Ed). Springer 2005. Modeling and Simulation. vertical MOSFETs. characteristics. lithography. FinFETs. Technology of Quantum Devices. non-uniform dopant concentration. Coulomb blockade.R. Paul. Gilmer. Physics of Quantum Well Devices. Quantum heterostructures. velocity saturation. MODFET/HEMT 9 hours UNIT-IV: Carbon nanotubes based devices – CNFET. strained Si devices 9 hours UNIT-III: Hetero structure based devices – Type I. Nag. Silicon Quantum Integrated Circuits Silicon-Germanium Heterostructures Devices: Basics and Realisations. B.C. FD SOI. interconnect issues.resonant tunneling devices.M. Nanoelectronics and Nanosystems: From Transistors to Molecular and Quantum Devices. 9 hours UNIT-II: Novel MOS-based devices – Multiple gate MOSFETs. Karl Goser. 3. Vladimir V Mitin. D. power density. S. Bloch oscillations TEXT BOOKS/REFERENCE BOOKS 1. High-K gate dielectrics. 2005. tunneling. hot electron effects. threshold voltage scaling. Nanoscale Transistors: Device Physics. Springer.EEC7232
UNIT-I: 10 hours Challenges going to sub-100 nm MOSFETs – Oxide layer thickness. E. Silicon-on-insulator devices. Springer 2005. Springer 2005. ISBN 978-0-7923-6576-1. Wiley. High Dielectric Constant Materials for VLSI MOSFET Applications. Nanoelectronics – Principles & devices. Springer 2002. Huff and D. PD SOI. fundamental limits for MOS operation. characteristics UNIT-V: 8 hours Quantum structures – quantum wells. Spin-based devices – spinFET. 6. Silicon-on-nothing. Manijeh Razeghi. II and III Heterojunction.Kasper. energy quantization. 2. hetero structures of III-V and II-VI compounds . Si-Ge heterostructure. 8. sub-threshold current.R. effects of high-K gate dielectrics on MOSFET performance. 5. Mark Lundstrom and Jing Guo. Mircea Dragoman and Daniela Dragoman. Viatcheslav A Kochelap and Michael A Stroscio.
. Single electron devices – charge quantization. 7. 2005. quantum wires and quantum dots. 9. ISBN 978-1-4419-1055-4. Springer.
Academic Press (1991). Metal semiconductor Field Effect Transistors (MESFETs): Pinch off voltage and threshold voltage of MESFETs. 5. Springer 2008. GaN etc. Artech (1990). C. doping concentration and temperature. ON-resistances and their dependence on the device geometry and size. High Speed Semiconductor Devices. ISBN 978-3-540-71890-1. TCAD for Si. Sams & Co. Technology and Devices. AlGaAs. dopants and electrical properties such as carrier mobility. Ralph E. InGaAs/InP HEMT structures: Hetero junction Bipolar transistors (HBTs): Principle of operation and the benefits of hetero junction BJT for high speed applications.. Introduction to Semiconductor Technology: GaAs and Related Compounds. Technology and Circuit Applications. Wang. The generic Modulation Doped FET(MODFET) structure for high electron mobility realization. Kai. Williams.. Reliability Engineering Theory and Practice. Prof.K. 8. SiC. resistances. doping concentration and temperature. Resonant-tunneling hot electron transistors TEXT BOOKS/ REFERENCE BOOKS 1. Wiley (1990) ISBN 0-471-62307-5 6. Ferry. ISBN 012-691740-X.M. InP. The Institution of Engineering and Technology. Sze. Alessandro Birolini. Metal semiconductor contacts.. S. 7. Principle of operation and the unique features of HEMT. 1992. InP and GaN based devices for high speed operation. UNIT-II:Materials properties: Merits of III –V binary and ternary compound semiconductors (GaAs. 9. Sandip Tiwari. Artech House. carrier mobility. junction capacitances. 1985 4. C.EEC7233 COMPOUND SEMICONDUCTOR DEVICES 3-0-0 Credits:3 UNIT-I:Important parameters governing the high speed performance of devices and circuits: Transit time of charge carriers.ISBN 978-0-86341-743-6.A. F. Springer 2007. Avishay Katz. David K. SiGe HBTs and the concept of strained layer devices. 3. Material and device process technique with these III-V and IV – IV semiconductors. United Kingdom. Gallium Nitride Electronics. characteristics and analysis of drain current. GaAs High-Speed Devices: Physics.Y.
. electrostatic calculations. Sub threshold characteristics. D. UNIT-III:Metal semiconductor contacts and Metal Insulator Semiconductor and MOS devices: Native oxides of Compound semiconductors for MOS devices and the interface state density related issues. Armstrong. John Wiley & Sons. Howard W. device geometries.). electric field characteristics of materials and device processing techniques. Chang. important parameters governing the high power performance of devices and circuits: Break down voltage. 10. High Frequency resonant – tunneling devices. short channel effects and the performance of scaled down devices. Indium Phosphide and Related materials: Processing. as compared to silicon based devices. 2007. Schottky barrier diode. 2. GaAs and InP based HBT device structure and the surface passivation for stable high gain high frequency performance. different SiC structures. UNIT-IV:High Electron Mobility Transistors (HEMT): Hetero-junction devices. SiGe and GaAs Integrated Circuits. homo and hetro junctions. Gallium Arsenide Technology. Cheng T. silicon-germanium alloys and silicon carbide for high speed devices. London. Modern GaAs Processing Methods. doping. Band diagrams. Dr. Compound Semiconductor Device Physics. velocity versus electric field characteristics of these materials. ISBN 0-89006-343-5. Band gap engineering. Ruediger Quay. G. InGaAs.C. outline of the crystal structure. Ed. Wiley & Sons. Ed. Velocity overshoot effects and the related advantages of GaAs. Maiti.
second break down and safe operating area. Triacs and GTO. IEEE Press. Baliga. di/dt and dv/dt ratings of thyristors. 12 hours UNIT-III: Power MOSFET structure. Switching characteristics. PWS Publishing Co. Forward voltage drop in high voltage PIN diodes . Grant. Raymond S. and its dependence on carrier lifetime. 4. 3rd ed. Bimal K. Power Electronics. on resistance. Power Semiconductor Devices.. Circuits. Minimum size chip design for specific drain breakdown voltage. Jayant. Boston. Chichester . London: Chapman & Hall (Kluwer) 5. Operation principle.. Devices and Applications. 2003. Vitezslav. Power Electronics Semiconductor Switches. Modern Power Electronics. Switching operation. 2nd ed. Benda. I-V characteristics. and Application. New York Wiley. Evolution. c 1999 3. 1996 2. Current-gain. Bose. and Duncan A. NJ: Pearson Education.
. Insulated Gate Transistor (IGT) – Structure. overlay transistor.. Safe operating area. 9 hours UNIT-IV: Power Integrated Circuit Problems and isolation techniques in HVIC’s. B. Cathode shorted and Anode shorted Thyristor. Latch up and its prevention. 1992. Power semiconductor devices: theory and applications.. Breakdown voltage improvement Techniques.EEC7234
SEMICONDUCTOR POWER DEVICES
UNIT-I: 12 hours Avalanche Breakdown voltage of plane and planar pn junctions. I-V characteristics and turn off transients. Technology. High injection level effects in pn junctions. Rashid. Muhammad H. Bipolar Power Transistor structures and characteristics.. Upper Saddle River. John Gowar. 12 hours UNIT-II: Thyristor operation principles: Reverse and forward blocking voltage and forward conduction characteristics. Smart PIC’s and HVIC’s TEXT BOOKS/ REFERENCE BOOKS 1. Ramshaw.
Addison-Wesley. Metals handbook. secondary ion and Rutherford backscattering TEXT BOOKS/ REFERENCE BOOKS 1. 1990
.A. Transmission Electron Microscopy. 2. NY. D. packing in crystals and important metallic. Piezo electric and ferro electric materials. Plenum Press. 7th Ed. 9. Hummel: Electronic Properties of Materials 5. Scanning Tunneling Microscopy. para-. Vol. Phase Diagrams: Material Science and Technology. Settle. equivalence of planes.H. W..M. introduction to phase diagram and utility of phase diagrams 10 hours UNIT-II: Dielectric materials: Ploarization. 1991.EEC7235
UNIT-I: 8 hours Classification of materials (by structure amorphous. New York. John Wiley & Sons. Academic Press. directions. C. electron. 7.Goldman. R.D. Modern Ferrite Technology. Bonding in solids. frequency dependence of dielectric constant. Haasen (Ed. New York. Phase Transformations in Materials. 9. 1978. A. Kittel. Soft and hard magnetic materials. SEM. and antiferromagnetism.. Magnetostriction. 1986. P.G. Garnets and their applications 15 hours UNIT-IV: Principles of measurement techniques: Optical Microscopy techniques-phase contrast. Willard. shape and size of samples on the magnetisation process. OH. and Barry Carter. spectroscopic characterisation methods: x-ray. Merrit. 11. 1978 6. Khachaturyan. Instrumental Methods of Analysis. Characterisation of Materials. Theory of Structural Transformations in Solids. Metals Park. D. Boltzman Transport Equation. Introduction to Solid State Physics. poly crystalline and crystalline and by conductivity type). Alper. Molecular field theories. C. Dean and F. Super and indirect (RKKY) exchange interactions. 6. Wiley Interscience. VCH Pub. USA.. Energy bands.B. American Society of Metals. N. Brillouin zones. planes. Dielectric properties of materials for electrical insulators and capacitors. B. ionic and covalent structures . Mermin: Solid State Physics 4. J. reciprocal lattice and Free electron theory. Delhi. L. interferometric and polarization microscopes. Ellipsometry. Ashcroft and N. Magnetic domains and hystereris loops) Localised and itinerant (band) models-Direct. 1996. E. A. Williams.. magnetic domains-influence of defects in. 1983. H. Elements of X-ray diffraction. 10. Ferrites. 1986. dielectric relaxation time. 3. Electrostriction 12 hours UNIT-III: Electronic structure of magnetic materials (Properties: Dia-. 10th Ed. CBS Publishers & Distributors.). 8. Vol.. New York. Ferromagnetic semiconductors. Magnetic anisotropy. ferro. 6th Ed. Cullity. A..L. Transmission electron microscopy. Confocal scanning microscopy. auger. Van Nostrand.A. 1996. dielectric constant. ferri-. TEM. Scanning Probe Microscopy. Atomic Force Microscopy.
EEC7236 Semiconductor Device Characterization: Theory and practice of Electrical characterization techniques. Physical characterization techniques