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Epitaxial Planar Transistor(NPN) 2SD1624

Epitaxial Planar Transistor (NPN)


Features
Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO.

SOT-89

Mechanical Data
Case: Terminals: Weight: SOT-89, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram

Maximum Ratings (T Ambient=25 unless noted otherwise) C


Symbol Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Rating 60 50 6 3 6 600 500 Collector Power Dissipation 1 Junction Temperature Storage Temperature Range 150 -55 to +150 Unit V V V A A mA mW W C C Note 1 Conditions

VCBO VCEO VEBO IC ICP IB PC PC* TJ TSTG

Note 1: *Package mounted on ceramic substrate (250mm2 X 0.8t)


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Epitaxial Planar Transistor (NPN) 2SD1624


Electrical Characteristics (T Ambient=25 unless noted otherwise) C
Symbol Description Min. Typ. Max. Unit Conditions

ICBO IEBO

Collector Cut-off Current Emitter Cut-off Current Suffix A

100 140 200 35

0.19 0.94 150 25 70 650 35

1 1 200 280 400 0.5 1.2 -

A A

VCB=40V, IE=0 VEB=4V, IC=0

hFE(1)
D.C. Current Gain

Suffix B Suffix C

VCE=2V, IC=100mA

hFE(2) VCE(sat) VBE(sat) fT Cob ton tstg tf


Switching Time Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Storage Time Fall Time

VCE=2V, IC=3A
V V MHz pF

IC=2A, IB=100mA IC=2A, IB=100mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz

nS

Rev. A/CH www.taitroncomponents.com Page 2 of 7

Epitaxial Planar Transistor (NPN) 2SD1624


Typical Characteristics Curves
Fig.1-Collector Current vs. Collector Emitter Voltage Fig.2-Collector Current vs. Collector Emitter Voltage

Collector Current (A)

Collector Current (A)

Collector-Emitter Voltage (V)

Base-Emitter Voltage (V)

Fig.3- Collector Current vs. Collector Emitter Voltage

Fig.4- DC Current Gain vs. Collector Current

Collector Current (A)

Collector-Emitter Voltage (V)

DC Current Gain

Collector Current (A)

Rev. A/CH www.taitroncomponents.com Page 3 of 7

Epitaxial Planar Transistor (NPN) 2SD1624


Fig.5- Base-Emitter Saturation Voltage vs. Collector Current Collector-Emitter Saturation Voltage (mV) Base-Emitter Saturation Voltage (V) Fig.6- Collector-Emitter Saturation Voltage vs. Collector Current

Collector Current (A)

Collector Current (A)

Fig.7- Output Capacitance vs. Collector Base Voltage

Fig.8- Gain-Bandwidth Product vs. Collector Current

Collector Base Voltage (V)

Gain-Bandwidth Product (MHz)

Output Capacitance (pF)

Collector Current (A)

Rev. A/CH www.taitroncomponents.com Page 4 of 7

Epitaxial Planar Transistor (NPN) 2SD1624


Fig.9- Collector Power Dissipation vs. Ambient Temperature Fig.10- Collector Current vs. Collector Emitter Voltage

Collector Power Dissipation (W)

Ambient Temperature Ta ( C)

Collector Current (A)

Collector Emitter Voltage (V)

Rev. A/CH www.taitroncomponents.com Page 5 of 7

Epitaxial Planar Transistor (NPN) 2SD1624


Dimensions in mm
SOT-89

PN 2SD1624

A MAX 4.7

B 0.2 2.5

C MAX 1.7

D +0.15 -0.1 0.45

E MAX 4.25

F 0.1 1.5

G TYP 0.4

H MAX 1.75

J MIN 0.75

K +0.1 -0.05 0.5

Rev. A/CH www.taitroncomponents.com Page 6 of 7

Epitaxial Planar Transistor (NPN) 2SD1624

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