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Optocoupler, Phototransistor Output, with Base Connection
A C NC 1 2 3 6 B 5 C 4 E
• Isolation test voltage 5000 VRMS • Interfaces with common logic families • Input-output coupling capacitance < 0.5 pF • Industry standard dual-in-line 6 pin package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• AC mains detection • Reed relay driving
The 4N25 family is an industry standard single channel phototransistor coupler. This family includes the 4N25, 4N26, 4N27, 4N28. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.
• Switch mode power supply feedback • Telephone ring detection • Logic ground isolation • Logic coupling with high frequency noise rejection
• UL1577, file no. E52744 • BSI: EN 60065:2002, EN 60950:2000 • FIMKO: EN 60950, EN 60065, EN 60335
PART 4N25 4N26 4N27 4N28 REMARKS CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 10 %, DIP-6 CTR > 10 %, DIP-6
ABSOLUTE MAXIMUM RATINGS
PARAMETER INPUT Reverse voltage Forward current Surge current Power dissipation OUTPUT Collector emitter breakdown voltage Emitter base breakdown voltage Collector current Power dissipation
SYMBOL VR IF
VALUE 5 60 3 100 70 7 50 100 150
UNIT V mA A mW V V mA mA mW
t ≤ 10 μs
IFSM Pdiss VCEO VEBO IC
t ≤ 1 ms
For technical questions, contact: firstname.lastname@example.org
Document Number: 83725 Rev. 1.8, 07-Jan-10
Refer to wave profile for soldering condditions for through hole devices (DIP). 4N26. and 500 V for the 4N25. Typical values are characteristics of the device and are the result of engineering evaluation. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. 4N28 Optocoupler. input output (2) Capacitance. part 1 VIO = 500 V.55 to + 100 125 260 Ω Ω °C °C °C °C VRMS mm mm mm (1) TEST CONDITION SYMBOL VALUE UNIT Notes (1) T amb = 25 °C. 4N26. (2) JEDEC registered values are 2500 V. Typical values are for information only and are not part of the testing requirements. (emitter open) VCE = 0 CCE BVCBO BVCEO BVECO 70 30 7 5 5 5 10 2 6 50 50 50 100 20 V V V nA nA nA nA nA pF IF = 50 mA VR = 3 V VR = 0 V VF IR CO 1.5 mm DIN IEC 112/VDE 0303.8. MAX. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. 1500 V. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). UNIT Notes (1) T amb = 25 °C.10 s dip soldering: distance to seating plane ≥ 1. Tamb = 25 °C VIO = 500 V. Vishay Semiconductors with Base Connection ABSOLUTE MAXIMUM RATINGS PARAMETER COUPLER Isolation test voltage Creepage distance Clearance distance Isolation thickness between emitter and detector Comparative tracking index Isolation resistance Storage temperature Operating temperature Junction temperature Soldering temperature (2) max. 07-Jan-10 For technical questions. 1500 V.vishay. collector emitter Resistance. unless otherwise specified. contact: optocoupleranswers@vishay. 4N27. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document.com www. Minimum and maximum values are testing requirements. Document Number: 83725 Rev.5 V V GΩ pF VCB = 10 V. ELECTRICAL CHARACTERISTICS (1) PARAMETER INPUT Forward voltage (2) Reverse current (2) Capacitance OUTPUT Collector base breakdown voltage (2) Collector emitter breakdown voltage (2) Emitter collector breakdown voltage (2) IC = 100 μA IC = 1 mA IE = 100 μA 4N25 ICEO(dark) (2) VCE = 10 V. IF = 50 mA VIO = 500 V f = 1 MHz VIO VCE(sat) RIO CIO 100 0. (base open) 4N26 4N27 4N28 ICBO(dark) (2) Collector emitter capacitance COUPLER Isolation test voltage (2) Saturation voltage.5 100 V μA pF TEST CONDITION PART SYMBOL MIN.3 0.4 175 1012 1011 . Tamb = 100 °C RIO RIO Tstg Tamb Tj Tsld VISO 5000 ≥7 ≥7 ≥ 0.55 to + 125 . Phototransistor Output.6 5000 0.4N25.com 133 . 4N27.1 25 1. input output Peak. TYP. 60 Hz ICE = 2 mA. and 4N28 respectively. unless otherwise specified. 1.
SWITCHING CHARACTERISTICS PARAMETER Rise and fall times TEST CONDITION VCE = 10 V.8 0. TYP.8. with Base Connection CURRENT TRANSFER RATIO PARAMETER (1) TEST CONDITION PART 4N25 4N26 4N27 4N28 SYMBOL CTRDC CTRDC CTRDC CTRDC MIN.0 0. 2 MAX.55 °C TA = 25 °C Normalized to: VCE = 10 V. IF = 10 mA. 4N28 Vishay Semiconductors Optocoupler.1 1 10 100 TA = 85 °C 10 100 i4n25_01 IF .Normalized CTR 1. IF = 10 mA. Forward Current Fig.4 V 1.0 0 1 10 100 0. 3 .1 1.5 NCTR .4 V 1.7 0. UNIT μs TYPICAL CHARACTERISTICS Tamb = 25 °C.3 1.Normalized CTR TA = .Normalized CTR Normalized to: VCE = 10 V. 4N26.com 134 For technical questions. TA = 25 °C CTRCE(sat) VCE = 0. unless otherwise specified 1. 07-Jan-10 . IF = 10 mA Note (1) Indicates JEDEC registered values.LED Current (mA) Fig.0 TA = 70 °C 0.1 i4n25_04 1 10 100 i4n25_02 IF .0 TA = 50 °C 0. TA = 25 °C CTRCE(sat) = 0.Normalized Non-Saturated and Saturated CTR vs. 1 .Normalized Non-Saturated and Saturated CTR vs.LED Current (mA) IF . RL = 100 Ω SYMBOL tr. IF = 10 mA.2 1.0 TA = 25 °C NCTR .Forward Current (mA) i4n25_03 IF . 4N27. 2 .5 VF -Forward Voltage (V) 1. tf MIN.Normalized Non-Saturated and Saturated CTR vs.5 Normalized to: VCE = 10 V.9 0.4 1.5 NCTR(SAT) NCTR 0. LED Current www.5 NCTR(SAT) NCTR 0.vishay. contact: optocoupleranswers@vishay. LED Current 1.0 0.0 0.Forward Voltage vs.4N25.com Document Number: 83725 Rev. IF = 10 mA. TA = 25 °C CTRCE(sat) VCE = 0. 1.4 V 1. 20 20 10 10 TYP. 4 . Phototransistor Output.1 1 NCTR . UNIT % % % % DC current transfer ratio VCE = 10 V.5 NCTR(SAT) NCTR 0.LED Current (mA) Fig. 50 50 30 30 MAX. LED Current Fig.
4N26. 4N27. TA = . IF = 10 mA.Normalized hFE 103 10 2 1.5 25 °C 50 °C 70 °C 0.Base Current (µA) Fig. Temperature Fig. contact: optocoupleranswers@vishay. IF = 10 mA.1 1 10 100 i4n25_05 IF . 5 .LED Current (mA) Fig. 6 . 10 .0 0. 7 .6 0.com www.20 0 20 40 60 80 100 Typical 0. TA = 70 °C 0.Normalized Photocurrent vs. 9 .Normalized CTRcb vs.4 V 1. VCE = 10 V.1 10.01 0. TA = 25 °C CTRCE(sat) VCE = 0.Collector Emitter Leakage Current vs. 8 . TA = 25 °C VCE = 10 V 101 100 10. TA = 25 °C 1 1 0.8. 1. TA = 50 °C Nib. Temperature and LED Current Fig.8 Normalized to: IB = 20 µA.LED Current (mA) i4n25_08 IF .Normalized Non-Saturated hFE vs.0 25 °C .5 Normalized to: VCB = 9.1 1 10 100 20 30 40 50 60 i4n25_06 IF .20 °C Nib.0 0. 07-Jan-10 For technical questions.4N25.4 1 i4n25_10 10 100 1000 i4n25_07 Tamb.Normalized CTRcb NCTR .3 V.vishay.Collector Current (mA) 25 20 15 25 °C 10 5 0 0 10 Normalized Photocurrent 30 50 °C 70 °C 85 °C Normalized to: IF = 10 mA.5 NCTR(SAT) NCTR 0.LED Current (mA) i4n25_09 IF .Collector Emitter Current vs. LED Current Fig. TA = 25 °C 1.LED Current (mA) Fig. Vishay Semiconductors with Base Connection 1. 4N28 Optocoupler.20 °C 0.Ambient Temperature (°C) Ib .5 NCTRcb .0 0. Base Current and Temperature Document Number: 83725 Rev.1 1 10 100 0.0 TA = 85 °C 1.Collector Emitter (nA) 104 NhFE . Phototransistor Output.2 70 °C ICEO .Normalized CTR Normalized to: VCE = 10 V. Nib.Normalized Non-Saturated and Saturated CTR vs.2 . IF and Temperature 105 1.com 135 . LED Current and Temperature 35 10 ICE . TA = 20 °C Nib.
5 VCE = 0. 13 .Propagation Delay (µs) IF = 10 mA. 11 .0 100 RL . 12 .Switching Timing tPHL . 4N28 Vishay Semiconductors Optocoupler. Base Current and Temperature 1000 2.Normalized Saturated hFE 1.0 25 °C .1 i4n25_12 1 10 1.5 1 0.Collector Load Resistor (kΩ) Fig. Collector Load Resistor IF tD VO tR tPLH VTH = 1.Propagation Delay vs.4 V 0. 1.Propagation Delay (µs) tPHL 100 2.5 Normalized to: VCE = 10 V.0 V.5 tPLH. Phototransistor Output.5 V www. contact: email@example.com 1 i4n25_11 RL VO IF = 10 mA 10 100 1000 i4n25_14 Ib . 4N27. 07-Jan-10 . 4N26. TA = 25 °C VCC = 5. 14 .20 °C 0.com 136 For technical questions.0 10 tPLH 1.Base Current (µA) Fig.vishay.com Document Number: 83725 Rev.5 V tPHL i4n25_13 tS tF Fig.Normalized hFE vs. Ib = 20 µA TA = 25 °C f = 10 kHz DF = 50 % VCC = 5 V 70 °C 50 °C 1.Switching Schematic Fig.4N25. with Base Connection NhFE(sat) .8. Vth = 1.
2 ± 0. 0.3 0.3 4.5 ± 0.12 ± 0.8 ± 0. 4N28 Optocoupler.5 ± 0.5 ± 0.1 6 5 4 14771_2 1 2 3 PACKAGE MARKING 4N25 V YWW 24 21764-25 2. 7.62 typ. 4N27.8. 1. contact: firstname.lastname@example.org 4. 4N26.5 typ.25 7.5 ± 0. Vishay Semiconductors with Base Connection PACKAGE DIMENSIONS in millimeters 7.15 Document Number: 83725 Rev.com 137 .vishay. Phototransistor Output.1 1.5 ± 0.4N25.3 3.com www. 07-Jan-10 For technical questions.3 6.62 to 9.
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