THADOMAL SHAHANI ENGINEERING COLLEGE BANDRA(W), MUMBAI 400050

*CERTIFICATE*
Certify that Mr/Miss_________________________________ of F.E. (Sem-I)

Batch: ____ Roll No: ____ has completed the necessary experiments in Applied Physics-1 under my supervision in Laboratory in the year 2012-2013. Thadomal Shahani Engineering College

Teacher In-Charge

Head of the Department

Date:________________

APPLIED PHYSICS JOURNAL

THADOMAL SHAHANI ENGINEERING COLLEGE

APPLIED PHYSICS SECTION SEM-1 INDEX F.E 2012-2013

Sr .No

Experiment

Date

Sign

CRYSTAL STRUCTURE-1

CRYSTAL STRUCTURE-2

MILLER INDICES

P-N JUNCTION CHARACTERISTICS

THADOMAL SHAHANI ENGINEERING COLLEGE

APPLIED PHYSICS SECTION F.E SEM-1

ROLL NO: NAME:

BATCH: EXPERIMENT NO:1

CRYSTAL STRUCTURE-1
Aim: To study unit cell structure using cubic models. Apparatus: Scaled models of S.C., B.CC, F.CC CRYSTAL STRUCTURES. Diagrams:

a) Simple cubic structure

b) Body Centered cubic structure

c) Face Centered cubic structure

d) NaCL Crystal Structure

e) Diagrams illustrating Packing Fraction

Theory:

Observation Table:
1) To find out No. of atoms/Unit cell No. of atoms at corner Nc No. of atoms on face Nf No. of atoms at center Nb Total No. of atoms in unit cell N=NC/8+NF/2+NB/1

TYPE OF CRYSTAL

Simple cubic

Body centered

Face Centered

2)To find out Packing Fraction & Co-ordination number

Volume of unit cell Vc

Atomic Radius (r)

Packing Fraction

TYPE OF CRYSTAL

CO-ORDINATION NUMBER

Simple cubic

Body centered

Face Centered

Formula and Calculation: Packing Fraction= Volume of atom X No. Of Atoms per unit cell Volume of Cell

For Sc

r=

For Bcc

r=

For F.C.C

r=

Result: Packing Fraction for S.C= Packing Fraction for B.C.C.= Packing Fraction for F.C.C.=

Date:

Signature Batch in-Charge

THADOMAL SHAHANI ENGINEERING COLLEGE APPLIED PHYSICS SECTION F.E SEM-1

ROLL NO: NAME:

BATCH: EXPERIMENT NO:2

CRYSTAL STRUCTURE-2
Aim: To study unit cell structure using cubic models. Apparatus: Scaled models of HCP CRYSTAL STRUCTURE. Diagrams:

a) HCP structure

Theory:

Formula and Calculation: Packing Fraction= Volume of atom X No. Of Atoms per unit cell Volume of Cell For HCP r= a

Result: Packing Fraction for H.C.P.=

Date:

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THADOMAL SHAHANI ENGINEERING COLLEGE APPLIED PHYSICS SECTION F.E SEM-1

ROLL NO: NAME:

BATCH: EXPERIMENT NO:3

MILLER INDICES
Aim: To find miller indices of important planes in Simple Cubic, B.C.C, and F.C.C. Structure and find inter-planar distance. Apparatus: Scaled models of S.C., B.CC, F.CC CRYSTAL STRUCTURES. Diagrams:(For surface, triangular, diagonal plane system)

a) Simple cubic structure

b) Body Centered cubic structure

c) Face Centered cubic structure

Theory:

Observations: Sr No Type of cell Type of Plane Intercepts Numerical Miller Parameters indices lx ly lz 1 S.C surface p q r h k l Dnkb= a/(h2+k2+l2) Ratio of Spacing

S.C

Triangular diagonal Diagonal triangular

S.C

B.CC B.CC

surface diagonal

B.CC 3 F.C.C

triangular surface

F.C.C

diagonal

F.C.C

triangular

Conclusion: Ratio of spacing for Crystal structure is observed as

____________ forS.c, ____________ for B.C.C & ____________ for F.C.C. Date: Signature Batch in-Charge

THADOMAL SHAHANI ENGINEERING COLLEGE APPLIED PHYSICS SECTION F.E SEM-1

ROLL NO: NAME:

BATCH: EXPERIMENT NO:4

P-N junction characteristics Aim: To study characterisitics of the P-N junction diode Apparatus: Junction Diode(1N4007),VARIABLE Power supply, Rheostat,Digital Multimeter ,milliammeter, volt meter, connecting wires etc.

Circuit diagram: Forward Bias:

Reverse Bias:

Theory:

Procedure: For Forward Bias 1)With help of mutimeter, adjust Power supply voltage between 2.5 to 3 Volts.(use multimeter in the voltage mode). 2)Connect the circuit as shown in circuit diagram(a). 3)Set the rheostat variable terminal near negative(Ground terminal). 4)Insert Key-Plug in key to switch ON the circuit. 5)With the help of rheostat go on adjusting the voltage in suitable steps till Current attains measurable value in milliammeter. Once u get Measurable current In each miiliammeter;Increase the current by varying the Rheostat such that current varies by every measurable division. Note Down voltage value for each current step.Continue till current reaches Around 50 tp 80 mAmps. 6)Plot a graph drawn find out Static Resistance of Diode,Dynamic Resistance of Diode, Knee Voltage. For Reverse Bias 8)With help of mutimeter, adjust Power supply voltage between 10 to 12 Volts.(use multimeter in the voltage mode). 9)Connect the circuit as shown in circuit diagram(b). 10)Set the rheostat variable terminal near negative(Ground terminal).Insert Key-Plug in key to switch ON the circuit. 11)With the help of rheostat go on adjusting the voltage in suitable steps till Current attains measurable value in microammeter. Once u get Measurable current In each microammeter;Increase the current by varying the Rheostat such that current varies by every measurable division. Note Down current value for each voltage step.Continue till voltage reaches to maximum value 6)Plot a graph drawn of Current vs Voltage by using appropriate scale in the Third Quadrant of the Graph paper.

Observation Table Forward Bias: Reverse Bias:

Sr No

Voltage V

Current mAmp

Sr.No. Voltage V

Current amp

From graph: Calculation for static resistance:

Calculation for Dynamic Resistance:

Result: Forward static resistance of diode= Dynamic Resistance of diode= Knee Voltage=

Date:

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