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TQP7M9104

2W High Linearity Amplifier Applications
     Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless

24-pin QFN 4x4mm SMT Package

Product Features
           700-2700 MHz +32.8 dBm P1dB +49.5 dBm Output IP3 15.8 dB Gain at 2140 MHz +5V Single Supply, 435 mA Collector Current Internal RF overdrive protection Internal DC overvoltage protection Internal Active Bias On chip ESD protection Shut-down Capability Capable of handling 10:1 VSWR at 5Vcc, 2.14 GHz, 32.8 dBm CW Pout or 23.5 dBm WCDMA Pout

Functional Block Diagram
GND/NC GND/NC GND/NC GND/NC 24 23 22 21 20 GND/NC 19 GND/NC

Vbias GND/NC GND/NC RFin RFin GND/NC

1 2 3 4 5 6

18 17 16 15 14 13

Iref GND/NC RFout/Vcc RFout/Vcc RFout/Vcc GND/NC

10

11 GND/NC

GND/NC

GND/NC

GND/NC

Backside Paddle - RF/DC Ground

General Description
The TQP7M9104 is a high linearity driver amplifier in industry standard, RoHS compliant, QFN surface mount package. This InGaP/GaAs HBT delivers high performance across 700-2700 MHz range of frequencies with 15.8 dB Gain, +49.5 dBm OIP3 and +32.5 dBm P1dB at 2.14 GHz while only consuming 435 mA quiescent collector current. All devices are 100% RF and DC tested. The TQP7M9104 incorporates on-chip features that differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. The TQP7M9104 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device is an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multi-carrier 3G / 4G base stations.
Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc.

Pin Configuration
Pin #
1 4, 5 14, 15, 16 18 2, 3, 6, 7, 8, 9, 10, 11, 12,13, 17, 19, 20, 21, 22, 23, 24 Backside Paddle

GND/NC

Symbol
Vbias RFin RFout/Vcc Iref GND / NC RF/DC Ground

Ordering Information
Part No.
TQP7M9104 TQP7M9104-PCB900 TQP7M9104-PCB2140

Description
2W High Linearity Amplifier 920-960MHz EVB 2.11-2.17GHz EVB

Standard T/R size =2500 pieces on a 13” reel. - 1 of 13Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network
®

GND/NC

12

7

8

9

+5 MHz offset.25 +85 170 V °C °C Operation of this device outside the parameter ranges given above may cause permanent damage. .3 Units MHz MHz dB dB dB dBm dBm dBm dB Pout=+17 dBm/tone.5 +23. Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor. Icq Vcc Iref Thermal Resistance (jnc to case) θjc (1) Conditions Min 700 14. Parameter Operational Bandwidth Test Frequency Power Gain Input Return Loss Output Return Loss Output IP3 WCDMA Channel Power Output P1dB Noise Figure Quiescent Collector Current. Electrical Specifications Test Conditions:VCC = +5V.4 435 +5 19 15.7 Max 2700 17. TM1+64 DPCH.2 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® . PAR = 9. Inc. CW Recommended Operating Conditions Parameter Vcc Tcase Tj (for>10 hours MTTF) 6 Rating -65 to +150°C 6.5 V +30 dBm Min Typ Max Units +5 -40 +5.3 Typical 2140 15.8 12 9.8 4. ACLR Test set-up: 3GPP WCDMA.TQP7M9104 2W High Linearity Amplifier Specifications Absolute Maximum Ratings Parameter Storage Temperature Device Voltage.5 +49. T = 25C using a TQP7M9104-PCB2140 application circuit.7 dB at 0. Electrical specifications are measured at specified test conditions. ICQ = 435 mA.01% Prob. Specifications are not guaranteed over all recommended operating conditions.8 +32. ∆f=1MHz at -50 dBc ACLR +45. Vcc Maximum Input Power.5 +32 355 490 mA V mA °C/W Notes: 1.

0 0.74 -171.26 20.7616 -1.0 2.859 -1.21 -172.3772 0.4 -0 .615 -113.8 1.0 .0 0.74 -165.4503 ° -1.0 15 5.0 0 20 10.2 0. 5. 0 0.5124 -0.51 -174. 0 4. Swp Max 3GHz 2. calibrated to device leads Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) 50 -0.12 -167.951 -1.2787 -1.423 -35.6594 -0.3568 -22.725 -42.943 -51.19 -163.778 8.4 -0 .209 74.27 -179.971 13.8524 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -0.98 -43.8878 -1.0 0 0.2673 -2.05 -172.7196 10.8812 -1.531 -1.8 1.0 30 Gain (dB) 25 10.21 -78.12 -161.88 163.24 -168.2878 5.097 -37.56 167.7693 5.8777 -1.0222 6.533 -42.38 108.1412 8.2216 6.917 -57.TQP7M9104 2W High Linearity Amplifier Device Characterization Data 45 40 0.16 15.3201 6.94 89.02 162.435 -41.6005 -1. -10.0 -10.6296 -1.4 0. 4 35 0.1121 -1.8162 -5.4 0.32 Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor.4435 3.58 -179.631 -35.0 5.7617 -0.18 -167.1891 8.9043 124.126 118.2 10.6 0.4433 2. Iref = 19mA.235 -40. 0 4.0 -2 S(2.583 2.3414 6.69 176. .3509 7.461 -39.46 118.901 -8.6164 -1.2268 -1.5 2 2.9263 7.1446 -1.0149 -5.3 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® -3 .666 -35.0 4. unmatched 50 ohm system.0 Gmax 0 0.9853 -1.05 93.04 169.0 10.0 Swp Max 3GHz 2.4583 -0.841 -40.2 0. 4 Input Reflection Coefficients 1.05GHz -4 .43 -170.0 3.21 168.65 -159.0 -5.0 S-Parameter Data Vcc = +5 V.0 3.5099 -1.615 -40.8 -1.27 -151.2) S22 (ang) -155. 0 10 2 -0.36 173. T = +25 C.5 3 -0 . Inc.95 168. 0 1.6 -0.5556 6.9525 -3.7656 -1.5792 -1.6951 -3.67 63.4348 -0.8 0 3.0 -5.0 -2 -0 .0 2.38 171.73 -173.38 -1.01 -174.37 -166.1416 178.22 -163.3234 -7.0 4. 5.96 175.8455 -26.6 0 .0 5 Swp Min 0.6 0.8 S(1.2 0.273 4.05GHz -0.0 0.417 -1.551 -39.862 30.971 51.48 170.8 0 3.017 -37.4553 -179.1558 -0.75 -169.0 6 0.51 100.8288 0. Output Reflection Coefficients 6 0.0 -3 .5796 -0.412 -67.971 -37.116 83.84 165.682 -42.6099 3.23 126. 0 Gain (S21) -4 .1) Frequency (GHz) Swp Min 0.5 1 1.84 -175.2811 -1.0 .4274 -1. 2 -0. Icq = 435 mA.956 -41.935 -36.24 10.

=+25oC 20 Return Loss (dB) 21 Gain (dB) -5 -10 11 7 8 9 19 0.88 GHz 19 -15 0.4° at 880MHz) 0 Return Loss vs.7 pF L5 6.5 +5 435 19 C7 10 uF 6032 C17 1000 pF C1 100 pF B1 0 L3 0 Iref GND/NC RFout 18 17 16 15 C2 14 13 8.8 +44.TQP7M9104 2W High Linearity Amplifier Reference Design 869-894 MHz Typical Performance at 25 °C Frequency (MHz) Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+23 dBm/tone.88 GHz CW Signal Temp. Iref can be used as device power down current by placing R7 at location R8.85 0. 4. Vcc Quiescent Current. 2. 0 Ω resistors may be replaced with copper trace in the target application layout.7 -8.9 22 22. R1 is critical for device linearity performance. . Output Power Frequency : 0.89 0. Inc. ∆f = 1 MHz) 869 880 894 20. All components are of 0603 size unless stated on the schematic.88GHz 800 700 600 500 0. 6. 5.869GHz -60 -65 12 14 16 18 20 22 24 26 0.2 pF 10 C7 R6 R7 C17 C13 R3 R1 C1 B1 L4 C11 R2 L5 RF Performance Plots 869-894 MHz 22 Gain vs.8 -11. Components shown on the silkscreen but not on the schematic are not used.5° at 880MHz) Distance between center of C2 and U1 device package is 355 mil (16.869 GHz 35 30 0.1 +44.=+25oC -50 -55 0.85 0.2 pF 4.8 +33.4 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® .894GHz 400 20 22 24 26 28 30 32 34 Output Power (dBm) Output Power (dBm) Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor.8 20.8 nH C8 C9 1 2 3 4 5 6 Vbias GND/NC GND/NC RFin RFin GND/NC Supply Voltage. 7. Frequency W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9. Frequency 1MHz Tone Spacing Temp. Iref GND/NC U1 GND/NC GND/NC GND/NC GND/NC GND/NC GND/NC 12 GND/NC RFout RFout GND/NC L4 0 8.86 0.1 uF R1 33 nH 0603 R7 110  Vcc +5V 20.86 0. 3. Critical component placement locations: Distance between center of C8 and U1 device package is 243 mil (11° at 880MHz) Distance between center of L5 and U1 device package is 452 mil (20.6 +34. Icq Reference Current.87 0.1° at 880MHz) Distance between center of C9 and U1 device package is 275 mil (12.=+25oC 1100 1000 900 Icc (mA) Collector Current vs.01% Probability 3.7 pF L1 18 nH 0805 C3 J3 RF Output C15 100 pF 24 23 22 21 20 GND/NC GND/NC GND/NC GND/NC WCDMA Channel Power (at -50 dBc ACLR) dB V mA mA R2 J2 RF Input C11 100 pF 22 pF 51  C10 2. The recommended component values are dependent upon the frequency of operation. Frequency C8 C2 C10 C9 U1 L1 C14 L3 C15 C3 Notes: 1.5 -9.88 0.894 GHz 18 0.89 0.9 +44.7dB @ 0.87 0. Frequency S11 S22 OIP3 (dBm) 55 50 45 40 OIP3 vs.3 +34.7 23 Units dB dB dB dBm dBm C14 100 pF R6 220  D3 SM05T1G C13 R3 0 0. Output Power vs.88 0. Output Power vs.84 MHz BW Temp.90 21 22 23 24 25 26 27 Frequency (GHz) Frequency (GHz) Output Power / Tone(dBm) -40 -45 ACLR (dBm) ACLR vs.3 -13 -7.8 -13.90 -20 0.

Accu-P Resistor. C14. 0603. Chip. SOT-23 Capacitor. 50 V.2 pF 4. 0603. 50V. 0603.7 pF 8. 50 V.7 pF L1 18 nH 0805 C3 J3 RF Output C15 100 pF R7 110  C7 10 uF 6032 C17 1000 pF C1 100 pF C17 C13 R3 R1 C1 B1 L4 L1 C14 L3 C15 24 23 22 21 20 GND/NC GND/NC GND/NC GND/NC C11 R2 L5 C8 C2 C10 C9 U1 C3 C14 100 pF 1 2 R2 J2 RF Input C11 100 pF 22 pF 51  C10 2. See PC Board Layout under Application Information section for more information. 0603.3° at 940MHz) Bill of Material Ref Des n/a n/a D3 C9 B1. NPO/COG Inductor. 8. 10% Resistor. R4. 1%. 5% Capacitor. 10%.05pF. C8 C10 C1. 5. 0603.TQP7M9104 2W High Linearity Amplifier Application Circuit 920-960 MHz (TQP7M9104-PCB900) C7 R6 R7 Vcc +5V R6 220  D3 SM05T1G C13 R3 0 0. 50 V. 1008. Accu-P Capacitor. Chip.7 pF L5 6. R1 is critical for device linearity performance.1 uF R1 33 nH 0603 B1 0 L3 0 Iref GND/NC RFout 18 17 16 15 C2 14 13 8.8 nH 5 C8 6 C9 3 4 Vbias GND/NC GND/NC RFin RFin GND/NC GND/NC U1 GND/NC GND/NC GND/NC GND/NC GND/NC GND/NC 12 GND/NC RFout RFout GND/NC L4 0 6. 5%.5 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® . 0603. 0603. Coilcraft CS Series Capacitor. ±0. C15 L1 C17 C13 C7 R2 R6 R7 R1 R8. ±0. 50V. 1/16W Resistor. NPO/COG Capacitor. 0603. Tantalum. 1/16W Inductor. 0603. 2. Chip. 5%. Chip. 6. Components shown on the silkscreen but not on the schematic are not used. L4. 0 Ω resistors may be replaced with copper trace in the target application layout. 0603. The recommended component values are dependent upon the frequency of operation. 10% Capacitor .D3 Value n/a n/a n/a 2. 5%. 6032. Accu-P Capacitor. 1/16W Resistor.8 pF 10 Notes: 1. 0603. Critical component placement locations: Distance between center of C8 and U1 device package is 190 mil (9.05pF. C4. Inc.05pF. All components are of 0603 size unless stated on the schematic. 50V.7° at 940MHz) Distance between center of C9 and U1 device package is 275 mil (13. NPO/COG Capacitor.2 pF 22 pF 100 pF 18 nH 1000 pF 0. Chip. 1%. ±0. 0603. dual.8 nH 4. Chip. X5R. 5% Do Not Place Manuf. C11. Chip. 5%.7 pF 0Ω 6. R3 L5 C3 C2. 7.1 uF 10 uF 51 Ω 220 Ω 110 Ω 33 nH n/a Description Printed Circuit Board Printed Circuit Board Zener. 50 V. TriQuint TriQuint various AVX various Toko AVX AVX various various Coilcraft various various various various various various Toko 11 7 8 9 19 Part Number 1078282 1078282 06035J2R7ABSTR LL1608-FSL6N8 06035J4R7ABSTR 06035J8R2ABSTR 1008HQ-18NXJL LL1608-FSL33N Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor. 35V. 3. 5%. Iref can be used as device power down current by placing R7 at location R8. . Chip. 0603. 1/16W Inductor. Chip.2° at 940MHz) Distance between center of L5 and U1 device package is 452 mil (21. C12. Chip. 4.8° at 940MHz) Distance between center of C2 and U1 device package is 305 mil (14. Chip. L3.

94 0.94 0.92 0. RF Performance Plots 920-960 MHz 23 Gain vs.98 1.7 dB at 0.40 °C +25°C +85 °C 37 P1dB vs.96 Frequency (GHz) Frequency (GHz) Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor.96 0.90 0. Icq Reference Current.01% Prob. Frequency 0 Input Return Loss vs.90 0.95 0.00 35 34 33 -10 -15 -20 0.98 1.93 0. . Inc.90 32 0. Frequency . PAR = 9. Iref 920 20.98 1.96 -20 0.40 °C +25°C +85 °C 22 21 20 19 .00 -5 Gain (dB) -10 -15 18 0.8 +45 +23. Frequency .94 0.94 0.TQP7M9104 2W High Linearity Amplifier Typical Performance 920-960 MHz Typical Performance at 25 °C Frequency (MHz) Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+23 dBm/tone.4 +45 +23 Units dB dB dB dBm dBm dBm V mA mA Notes: 1.92 0.8 +33. +5 MHz offset.96 0. Vcc Quiescent Collector Current.00 Frequency (GHz) Frequency (GHz) 0 Output Return Loss vs.5 +5 435 19 960 21 -11 -15 +33.40 °C +25°C +85 °C Return Loss (dB) 0.6 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® .8 -13 -9 +33.92 0. ACLR Test set-up: 3GPP WCDMA. Temperature +85°C +25°C −40°C Return Loss (dB) -5 36 P1dB (dBm) 0.92 0.9 +45 +24 940 21 -12 -11. ∆f = 1 MHz) WCDMA Channel power (at -50 dBc ACLR) [1] Supply Voltage. TM1+64 DPCH.

94 GHz -40 -45 ACLR vs.94 GHz CW Signal Temp. Frequency W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9. .=+25oC OIP3 (dBm) 45 40 35 30 21 22 23 24 25 26 27 OIP3 (dBm) 45 40 .7dB @ 0.96 GHz Output Power / Tone(dBm) Output Power / Tone(dBm) -40 -45 ACLR vs.TQP7M9104 2W High Linearity Amplifier 55 50 OIP3 vs.=+25oC Icc (mA) 800 700 600 500 400 16 18 20 22 24 26 28 30 32 34 Output Power (dBm) Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor.94 GHz 0. Output Power vs.94 GHz 0.92 GHz 35 30 21 22 23 24 25 26 27 0.01% Probability 3.92 GHz -60 -65 12 14 16 18 20 22 24 26 0. Temperature 1MHz Tone Spacing 55 50 OIP3 vs. Inc. Output Power vs.7 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® .=+25oC ACLR (dBm) -50 -55 -60 -65 12 14 16 18 20 22 24 26 . Frequency 1MHz Tone Spacing Temp.84 MHz BW Temp. Temperature W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9. Output Power Frequency : 0. Output Power vs. Output Power vs.7dB @ 0.40 °C +25°C +85 °C ACLR (dBm) -50 -55 0.01% Probability 3.96 GHz Output Power (dBm) Output Power (dBm) 1100 1000 900 Collector Current vs.84 MHz BW Frequency : 0.40 °C +25°C +85 °C 0.

±0. Chip.05pF. Ceramic Capacitor. 0603. Chip.3° at 2140MHz) Bill of Material Ref Des U1 n/a D3 C8 C9 C2 B1.5 pF 2.5 pF 10 11 Notes: 1. 0603. 50V. NPO/COG Capacitor.05pF. 5% Do Not Place Manuf. 4. L3. R4.1 uF 10 uF 51 Ω 220 Ω 110 Ω 120 nH n/a Description 2W High Linearity Amplifier Printed Circuit Board Zener. 5%.8 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® .TQP7M9104 2W High Linearity Amplifier Application Circuit 2110-2170 MHz (TQP7M9104-PCB2140) Vcc +5V R6 220  C7 R6 R7 D3 SM05T1G R7 110  C7 10 uF 6032 C17 C13 R3 R1 C13 R3 0 0. 20 %. Chip. 1008. 5%. C4. dual. 50V. 5%. Accu-P Capacitor. 0603. Components shown on the silkscreen but not on the schematic are not used. 2. 0603. Iref can be used as device power down current by placing R7 at location R8. 1/16W Inductor. SOT-23 Capacitor. 1/16W Resistor. 50V. Inc. Chip. 0603.4 pF 2. Chip. 0603. See PC Board Layout under Application Information section for more information. 50V. The recommended component values are dependent upon the frequency of operation. L4. 50V. TriQuint TriQuint various AVX AVX AVX various various various Coilcraft various various various various various various Toko 12 7 8 9 Part Number TQP7M9104 1078282 06035J1R5ABSTR 06035J2R4ABSTR 06035J2R7ABSTR 1008HQ-18NXJL LL1608-FSR12J Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor. 50V Resistor. NPO/COG Capacitor. ±0. 1/16W Resistor. 0603. C15 C1.7 pF 0Ω 22 pF 100 pF 18 nH 1000 pF 0. 1%.1 uF R1 120 nH 0603 B1 0 L3 0 Iref GND/NC RFout 18 17 16 15 C2 14 13 2. R3. C3 L1 C17 C13 C7 R2 R6 R7 R1 R8. Accu-P Capacitor. Tantalum. 3. All components are of 0603 size unless stated on the schematic. 0603. 0603. Accu-P Resistor. Chip. 7.4 pF 22 pF C8 5 6 C9 3 4 GND/NC GND/NC RFin RFin GND/NC C3 C2 GND/NC GND/NC GND/NC L4 L3 C15 L4 0 19 C15 22 pF C11 R2 C10 C9 C8 U1 U1 GND/NC GND/NC GND/NC GND/NC GND/NC GND/NC C3 100 pF J3 RF Output RFout RFout GND/NC 1. C12. C14.5° at 2140MHz) Distance between center of C2 and U1 device package is 113 mil (12. . Critical component placement locations: Distance between center of C8 and U1 device package is 50 mil (5.05pF. 0 Ω resistors may be replaced with copper trace in the target application layout. 0603. 0603. 10%. NPO/COG Inductor. 0603. 50V. 10%. 6.7 pF L1 18 nH 0805 C17 1000 pF C1 100 pF C1 B1 24 23 22 21 20 GND/NC GND/NC GND/NC L1 C14 C14 100 pF 1 Vbias 2 R2 J2 RF Input C11 0 51  C10 2. 50V. 5%. ±0. C11 C10. X5R Capacitor . Chip. Chip. Chip. 5%. 1/16W Capacitor.4° at 2140MHz) Distance between center of C9 and U1 device package is 275 mil (30. Chip. D3 Value n/a n/a n/a 1. R1 is critical for device linearity performance. 5. 8. 6032. 1%. Chip.

Icq Reference Current . ∆f = 1 MHz) WCDMA Channel power (at -50 dBc ACLR) [1] Noise Figure Supply Voltage.15 2. Frequency .9 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® .13 2. Inc.8 -10.14 2.8 -12.4 -8.40°C +25°C +85°C 17 16 15 14 Return Loss (dB) 2.4 +5 435 19 2170 15. .12 2. Frequency .7 dB at 0.14 2.10 2.8 +50 +24.0 4.18 2.17 Frequency (GHz) Frequency (GHz) Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor.5 4. Iref MHz dB dB dB dBm dBm dBm dB V mA mA 2110 15.5 +32.16 2. Frequency 0 Input Return Loss vs. Vcc Quiescent Collector Current.8 -12.16 2.5 +23.4 2140 15.6 Notes: 1.01% Prob.8 +49. RF Performance Plots 2110-2170 MHz 18 Gain vs.14 2.20 Frequency (GHz) Frequency (GHz) 0 Output Return Loss vs.14 2.40°C +25°C +85°C 35 34 P1dB vs.18 2. ACLR Test set-up: 3GPP WCDMA.40°C +25°C +85°C -15 13 2.12 2.16 2. Temperature +85°C +25°C −40°C Return Loss (dB) -5 P1dB (dBm) 33 32 31 30 2.8 -11.TQP7M9104 2W High Linearity Amplifier Typical Performance 2110-2170 MHz Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+17 dBm/tone.5 +32.12 2. +5 MHz offset.7 +32.20 2. PAR = 9.10 2.11 -10 -15 -20 2. TM1+64 DPCH.18 2.8 4.20 -5 Gain (dB) -10 .10 2.9 +49 +23.0 -9.16 -20 2.12 2.

Output Power vs.14 GHz 2. Output Power vs.0 Noise Figure vs. Output Power Frequency : 2.14 2.0 700 600 NF (dB) 16 18 20 22 24 26 28 30 32 34 4. Frequency Collector Current (mA) 900 800 5.15 2.11 GHz -60 2.17 GHz 23 25 .7dB @ 0. Inc.40 °C +25°C +85 °C 30 13 15 17 19 21 23 25 30 13 15 17 Output Power / Tone(dBm) Output Power / Tone(dBm) -40 ACLR vs. Temperature W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.16 2. Output Power vs.01% Probability 3.7dB @ 0.11 2.14 GHz 19 21 2.17 GHz .14 GHz -40 ACLR vs.13 2. Frequency W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.01% Probability 3. Temperature 1MHz Tone Spacing 55 OIP3 vs.14 GHz CW Signal Temp. . Output Power vs.11 GHz 2.40 °C +25°C +85 °C -65 17 19 21 23 25 27 -65 17 19 21 23 25 27 Output Power (dBm) Output Power (dBm) 1000 Icc vs.0 500 400 2.84 MHz BW Temp.10 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® .0 3. Frequency 1MHz Tone Spacing Temp.12 2.84 MHz BW Frequency : 2.TQP7M9104 2W High Linearity Amplifier 55 OIP3 vs.17 Output Power (dBm) Frequency (GHz) Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor.=+25oC 6.=+25oC -45 -45 ACLR (dBm) -50 -55 -60 ACLR (dBm) -50 -55 2.0 2.=+25oC 50 50 OIP3 (dBm) 45 40 35 OIP3 (dBm) 45 40 35 2.

12. GND/NC Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor.035”. Requires external match for optimal performance.014" Nelco N-4000-13 1 oz. 13. 10. Cu bottom layer 50 ohm line dimensions: width = . Reference current into internal active bias current mirror. 19. Cu inner layer 0. Use recommended via pattern shown under mounting configuration and ensure good solder attach for optimum thermal and electrical performance Evaluation Board PCB Information TriQuint PCB 1080068 Material and Stack-up Nelco N-4000-13 εr=3. 16 18 Backside paddle Symbol Vbias GND/NC RFin RFout / Vcc Iref RF/DC GND Description Voltage supply for active bias for the amp.014" 0.062" ± 0. blocking capacitor required. Inc. Land pads should be provided for PCB mounting integrity. 8. This pin can be grounded or N/C on PCB. 9. 24 4. Multiple Vias should be employed to minimize inductance and thermal resistance. . 15.006" Finished Board Thickness Core 1 oz. Requires external match for optimal performance. DC voltage present.11 of 13- GND/NC 12 7 8 9 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® .TQP7M9104 2W High Linearity Amplifier Pin Configuration and Description GND/NC GND/NC GND/NC GND/NC GND/NC 20 GND/NC 19 24 23 22 Vbias GND/NC GND/NC RFin RFin GND/NC 1 2 3 4 5 6 21 18 17 16 15 14 13 Iref GND/NC RFout/Vcc RFout/Vcc RFout/Vcc GND/NC 10 11 GND/NC GND/NC GND/NC GND/NC Backside Paddle . blocking cap required. 5 14. 20. 21. Connect to same supply voltage as Vcc.7. Cu top layer 1 oz. can be used as on/off control. 3. 22.RF/DC Ground Pin 1 2. Also. 6. Cu inner layer 0.7 typ. No internal connection. 23. RF Input.17. 1 oz. 11. RF Output. DC Voltage present.031” spacing = . Current into Iref sets device quiescent current.

70 FULL R.10 C d .25mm (0.38 . . 6. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor.08 C 2. All dimensions are in millimeters [inches].70 COMPONENT SIDE 2.10”). careful process development is recommended. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.000-.000 7M9104 .000 0.70 2.XXXXX C A 4. We recommend a 0.85±.YYWW Assembly code .500 Bsc 2.050 Exp.DAP R. Place mounting screws near the part to fasten a back side heat sink. The PCB land pattern has been developed to accommodate lead and package tolerances.64 TYP 16X . 5.075 . 4.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.DAP PIN #1 IDENTIFICATION CHAMFER 0.12 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® .05 0.050 f .50 PITCH. Do not apply solder mask to the back side of the PC board in the heat sink contact region.700±0. copper minimum for top and bottom layer metal. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation.64 TYP 2. TYP 24X .050 B 4.700±0. 3.050 . week . Use 1 oz. PCB Mounting Pattern . 7.300 X 45° .500 Ref.35mm (#80/.400±0. Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor.25±0.70 2.203 Ref. 8.TQP7M9104 2W High Linearity Amplifier Mechanical Information Package Marking and Dimensions Package Marking: Part number – 7M9104 Year. Ensure that the backside via region makes good physical contact with the heat sink. 2.19 .70 BACK SIDE NOTES: 1.050 Exp. Angles are in degrees. Inc. 2. Since surface mount processes vary from supplier to supplier.

com Tel: Fax: +1. or lifesustaining applications. Inc.615.engineering@tqs. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. licenses.13 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® . TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. or any other intellectual property rights. additional product information. . to any party any patent rights. reflow temp.9000 +1. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products.) and tin/lead (245 °C max.503. or other applications where a failure would reasonably be expected to cause severe personal injury or death.503. worldwide sales and distribution locations. TriQuint products are not warranted or authorized for use as critical components in medical. WHERE IS" and with all faults. and information about TriQuint: Web: www. and the entire risk associated with such information is entirely with the user.com Important Notice The information contained herein is believed to be reliable. This product also has the following attributes:  Lead Free  Halogen Free (Chlorine. Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor.8902 For technical questions and application information: Email: sjcapplications. The information contained herein is provided "AS IS. reflow temp.) soldering processes.triquint. explicitly or implicitly. life-saving. The information contained herein or any use of such information does not grant. TriQuint makes no warranties regarding the information contained herein.TQP7M9104 2W High Linearity Amplifier Product Compliance Information ESD Sensitivity Ratings Solderability Compatible with both lead-free (260 °C max. whether with regard to such information itself or anything described by such information.com Email: info-sales@tqs. ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: 1C ≥ 1000 V and < 2000 V Human Body Model (HBM) JEDEC Standard JESD22-A114 IV ≥ 1000 V min Charged Device Model (CDM) JEDEC Standard JESD22-C101 Package lead plating: Annealed Matte Tin over Copper RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). Bromine)  Antimony Free  TBBP-A (C15H12Br402) Free  PFOS Free  SVHC Free MSL Classification MSL Rating: Test: Standard: 1 +260 °C convection reflow JEDEC standard IPC/JEDEC J-STD-020 Contact Information For the latest specifications.615. All information contained herein is subject to change without notice.