PN2222A/MMBT2222A/PZT2222A — NPN General Purpose Amplifier

February 2009

PN2222A/MMBT2222A/PZT2222A NPN General Purpose Amplifier
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19.

PN2222A

MMBT2222A

PZT2222A

C

C

E

E C

TO-92
EBC

SOT-23
Mark:1P

B

SOT-223

B

Absolute Maximum Ratings * T
Symbol
VCEO VCBO VEBO IC TSTG

a

= 25×C unless otherwise noted

Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Operating and Storage Junction Temperature Range

Ratings
40 75 6.0 1.0 - 55 ~ 150

Units
V V V A °C

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RθJC RθJA

Ta = 25°C unless otherwise noted

Parameter
PN2222A Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 625 5.0 83.3 200

Max.
*MMBT2222A 350 2.8 **PZT2222A 1,000 8.0

Units
mW mW/°C °C/W

357

125

°C/W

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”. ** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.

© 2007 Fairchild Semiconductor Corporation PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0 1

www.fairchildsemi.com

8MHz IC = 100μA. IC = 0. IB1 = 15mA VCC = 30V. VCE = 10V IC = 10mA. f = 1. Units BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA.0mA. IC = 0 VCE = 60V.0 25 150 4. VCE = 20V. f = 1MHz VEB = 0. VCE = 10V * IC = 150mA.0 60 MHz pF pF pS dB Ω Switching Characteristics td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30V.0 10 0. IC = 150mA.fairchildsemi.0KΩ. f = 1MHz IC = 20mA. IE = 0. VCE = 20V.0V VCB = 60V. VCE = 10V * IC = 500mA.0 V V V V Small Signal Characteristics fT Cobo Cibo rb’Cc NF Re(hie) Current Gain Bandwidth Product Output Capacitance Input Capacitance Collector Base Time Constant Noise Figure Real Part of Common-Emitter High Frequency Input Impedance IC = 20mA. VCE = 10V IC = 150mA.0 1. VCE = 10V.3 1.5V. VCE = 10V IC = 500mA. VEB(off) = 0.5V. VCE = 10V IC = 500mA. VCE = 10V IC = 1. IE = 0 VCB = 60V. IB1 = IB2 = 15mA 10 25 225 60 ns ns ns ns * Pulse Test: Pulse Width ≤ 300μs. IC = 0 VCE = 60V. Ta = 125°C VEB = 3. VEB(off) = 3. VCE = 10V IC = 10mA. f = 100MHz VCB = 10V. VEB(off) = 3. Max.2 2.0KHz IC = 20mA. IE = 0 IE = 10μA.6 35 50 75 35 100 50 40 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * 0.0. VCE = 10V 0. IB = 0 BV(BR)CBO Collector-Base Breakdown Voltage BV(BR)EBO Emitter-Base Breakdown Voltage ICEX ICBO IEBO IBL Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current IC = 10μA.PN2222A/MMBT2222A/PZT2222A — NPN General Purpose Amplifier Electrical Characteristics Symbol Off Characteristics Ta = 25°C unless otherwise noted Parameter Test Condition Min.com .0% © 2007 Fairchild Semiconductor Corporation PN2222A/MMBT2222A/PZT2222A Rev.0V 40 75 6.1mA.0V. f = 300MHz 300 8. VCB = 20V. IE = 0.01 10 10 20 V V V nA μA μA nA nA On Characteristics hFE DC Current Gain IC = 0. f = 31. RS = 1. VCE = 10V * IC = 150mA. Ta = -55°C IC = 150mA.0 2 www. VCE = 10V. 1. Duty Cycle ≤ 2. IC = 150mA.

4 β = 10 400 300 200 25 °C 125 °C 0.1 .40 °C 캜 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.40°C 캜 0 0.COLLECTOR CURRENT (mA) 300 1 10 100 I C .PN2222A/MMBT2222A/PZT2222A — NPN General Purpose Amplifier Typical Characteristics V CESAT .COLLECTOR CURRENT (mA) 500 Figure 1.1 1 10 I IC .1 V CB Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 f = 1 MHz = 40V CAPACITANCE (pF) 16 12 C te 8 C ob 4 25 50 75 100 125 T A . Collector-Emitter Saturation Voltage vs Collector Current V BE(ON) .BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 β = 10 .COLLECTOR CURRENT (m A) C 500 0.6 0.8 25°C 캜 125 °C 캜 0.3 125°C 캜 25 °C 캜 0.6 125 °C 0.TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V Collector-Emitter Saturation Voltage vs Collector Current 0. 1.1 1 10 REVERSE BIAS VOLTAGE (V) 100 Figure 5. Collector Cutoff Current vs Ambient Temperature Figure 6.BASE-EMITTER ON VOLTAGE (V) V BESAT.40 °C 25 °C 0.COLLECTOR CURRENT (nA) 500 100 10 1 0.COLLECTOR CURRENT (mA) C 25 Figure 3.COLLECTOR-EMITTER VOLTAGE (V) h FE .com . Typical Pulsed Current Gain vs Collector Current Figure 2.AMBIENT TEMPERATURE (°C) 150 0.0.2 0.8 .4 1 10 100 I IC . Emitter Transition and Output Capacitance vs Reverse Bias Voltage © 2007 Fairchild Semiconductor Corporation PN2222A/MMBT2222A/PZT2222A Rev. Base-Emitter Saturation Voltage vs Collector Current Figure 4.0 3 www.40 °C 0.1 0. Base-Emitter On Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature I CBO .4 0.2 100 .fairchildsemi.3 1 3 10 30 100 I C .

4 2 1.2 1.25 1.2 0.fairchildsemi.8 0.0 4 www.COLLECTOR CURRENT (mA) I 1000 Figure 1.PN2222A/MMBT2222A/PZT2222A — NPN General Purpose Amplifier Typical Characteristics Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = Ic 10 Switching Times vs Collector Current 400 I B1 = I B2 = 320 V cc = 25 V Ic 10 320 V cc = 25 V TIME (nS) TIME (nS) 240 160 t off 240 160 80 tf td ts tr 80 t on 0 10 100 I I CC .4 0 V CE = 10 V I C = 10 mA h re h ie h fe h oe Common Emitter Characteristics 1.0.15 1.COLLECTOR CURRENT (mA) 1000 0 10 100 I CC .05 1 0.1 1. Common Emitter Characteristics © 2007 Fairchild Semiconductor Corporation PN2222A/MMBT2222A/PZT2222A Rev.95 0. RELATIVE TO VALUES AT TA = 25oC Common Emitter Characteristics 2.POWER DISSIPATION (W) Common Emitter Characteristics 8 V CE = 10 V T A = 25oC 0. 1.3 1.75 SOT-223 TO-92 6 h oe 0. Turn On and Turn Off Times vs Collector Current Figure 2.AMBIENT TEMPERATURE ( o C) 100 10 15 20 25 30 VCE . Switching Times vs Collector Current CHAR.5 SOT-23 4 h re 0.75 0 5 h oe h re h ie I C = 10 mA T A = 25oC h fe 0 20 40 60 80 T A . Common Emitter Characteristics Figure 6.6 1. Common Emitter Characteristics CHAR.com .25 2 h fe h ie 0 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 0 10 20 30 40 50 I C . RELATIVE TO VALUES AT VCE= 10V CHAR. Power Dissipation vs Ambient Temperature Figure 4.9 0.COLLECTOR VOLTAGE (V) 35 Figure 5.COLLECTOR CURRENT (mA) 60 Figure 3.85 0. RELATIVE TO VALUES AT I C= 10mA Power Dissipation vs Ambient Temperature 1 PD .8 0.

or to affect its safety or effectiveness. The datasheet is printed for reference information only. Rev. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. As used herein: 1. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. 2. SPECIFICALLY THE WARRANTY THEREIN. OR DESIGN. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY. Specifications may change in any manner without notice. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation PN2222A/MMBT2222A/PZT2222A Rev. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. supplementary data will be published at a later date. 1. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.com . THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS. FUNCTION. Life support devices or systems are devices or systems which. NOR THE RIGHTS OF OTHERS. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system. NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS. WHICH COVERS THESE PRODUCTS.fairchildsemi. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. This datasheet contains final specifications.0 5 www. (a) are intended for surgical implant into the body. can be reasonably expected to result in significant injury to the user. or (b) support or sustain life.0. and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling.PN2222A/MMBT2222A/PZT2222A PN2222A/MMBT2222A/PZT2222A NPN General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. This datasheet contains preliminary data.