AOD403.pdf | Field Effect Transistor | Capacitor

AOD403/AOI403

30V P-Channel MOSFET

General Description
The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications.

Product Summary
VDS ID (at VGS= -20V) RDS(ON) (at VGS= -20V) RDS(ON) (at VGS = -10V) -30V -70A < 6.2mΩ < 8mΩ

100% UIS Tested 100% Rg Tested

TO252 DPAK Top View D D Bottom View Top View

TO251A IPAK Bottom View

D

S G S

G S D G S D

G G S

Absolute Maximum Ratings TA=25° unless otherwise noted C Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A C TC=100° TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
C

Maximum -30 ±25 -70 -55 -200 -15 -12 -50 125 90 45 2.5 1.6 -55 to 175

Units V V A

VGS C TC=25° TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG

A A mJ W W ° C

Symbol
t ≤ 10s Steady-State Steady-State

RθJA RθJC

Typ 16 41 0.9

Max 20 50 1.6

Units ° C/W ° C/W ° C/W

Rev 8: May 2011

www.aosmd.com

Page 1 of 6

6 6. using junction-to-case thermal resistance.5 -3. ID=-20A 10 10 VGS=-10V. VDS=-15V. f=1MHz VGS=0V. E.2 9. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The maximum current rating is package limited.8 51 12 16 16 12 45 22 14 9 18 11 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 3500 760 660 5.5% max. ID=-20A TO252 VGS=-10V. duty cycle 0.7 8. H. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. VGS=0V VDS=-30V. The SOA curve provides a single pulse rating. VDS=0V. pulse width limited by junction temperature TJ(MAX)=175°C. RL=0. in a still air environment with TA =25°C. ID=-20A TO252 RDS(ON) Static Drain-Source On-Resistance VGS=-20V. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. Repetitive rating. dI/dt=100A/µs 1in2 Min -30 Typ Max Units V STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 ±100 -2. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.aosmd.6 6. VDS=-5V VGS=-20V. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. RGEN=3Ω IF=-20A. D. VGS=0V C TJ=55° VDS=0V. B.9 40 VGS=-10V. ID=-20A TO251A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V.7 42 -0.2 8 6. F. FUNCTIONS AND RELIABILITY WITHOUT NOTICE. ID=-20A TO251A VGS=-10V. VDS=-15V. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. Copper. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz.1 7.5 µA nA V A mΩ mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns Maximum Body-Diode Continuous CurrentG 2890 585 470 3. assuming a maximum junction temperature of TJ(MAX)=175°C.5 6. in a still air environment with TA=25°C.75Ω. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses.com Page 2 of 6 .7 61 14 22 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-20A. G. C. dI/dt=100A/µs 22 13 ns nC A. The value of RθJA is measured with the device mounted on FR-4 board with 2oz.VGS=0V TJ=125° C -1.7 -1 -70 2310 VGS=0V. The value in any given application depends on the user's specific board design. Copper. VDS=-15V. ID=-20A IS=-1A. Rev 8: May 2011 www. and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. The power dissipation PD is based on TJ(MAX)=175°C. f=1MHz 410 280 1.5 -200 5. and the maximum temperature of 175°C may be used if the PCB allows it. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN.AOD403/AOI403 Electrical Characteristics (TJ=25° unless otherwise noted) C Symbol Parameter Conditions ID=-250µA. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink. VGS= ±25V VDS=VGS ID=-250µA VGS=-10V.2 5.

2 0.0E+00 125°C 1.8 15 20 25 30 -ID (A) Figure 3: On-Resistance vs.6 0.5 6 10 Normalized On-Resistance 1.0E-05 0. Gate-Source Voltage (Note E) 5 1.0E+01 1.4 0.0E-03 1.0 1.com Page 3 of 6 .8 1.0E+02 1.4 1.5 3 3.5 4 4. Junction Temperature 18 (Note E) 20 ID=-20A 15 RDS(ON) (mΩ) Ω -IS (A) 125°C 10 1.5V 40 125°C 20 VGS=-4V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 20 25°C 0 1.0 0. Drain Current and Gate Voltage (Note E) 0 5 10 0 25 50 75 100 125 150 175 200 VGS=-20V ID=-20A 8 RDS(ON) (mΩ) Ω VGS=-10V 6 4 VGS=-20V 17 5 2 VGS=-10V 10 ID=-20A 2 0 Temperature (°C) Figure 4: On-Resistance vs.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 2.2 1 0.5 5 5.0E-02 1.0E-04 40 5 25°C 0 0 10 15 20 -VGS (Volts) Figure 5: On-Resistance vs.6 1.AOD403/AOI403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 -10V 80 -6V 80 -5V 60 -ID (A) -ID(A) 60 100 VDS=-5V 40 -4.0E-01 25°C 1.aosmd.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Rev 8: May 2011 www.8 1.

01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 8: May 2011 www.0001 0.0 0.01 0.0 1.0 0.1 Single Pulse 0. 0.0 100.02.00001 0. single pulse 40 0.01. 0.01 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.1 0.3.1.AOD403/AOI403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-15V ID=-20A 8 Capacitance (pF) 4000 Ciss -VGS (Volts) 6 3000 5000 4 2000 Coss 1000 Crss 0 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 30 2 0 0 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 60 0 1000.0 -ID (Amps) RDS(ON) limited 10.aosmd. 0.ZθJC.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) TJ(Max)=175°C TC=25°C TJ(Max)=175°C TC=25°C 10 Zθ JC Normalized Transient Thermal Resistance D=Ton/T TJ.RθJC 1 RθJC=1.6°C/W In descending order D=0. 0.001 0. 0.01 PD Ton T 0.0001 0.05.1 100 DC 10µs 10µs Power (W) 100µs 1ms 10ms 400 320 240 160 80 0 0.com Page 4 of 6 .PK=TC+PDM.001 0.5.

1 PD Single Pulse Ton T 0.RθJA RθJA=50°C/W In descending order D=0.0 -IAR (A) Peak Avalanche Current 150 120 90 60 30 0 1 10 100 1000 0 25 50 75 100 125 150 175 TA=25°C TA=100°C 100.aosmd.0 TA=150°C TA=125°C 10.ZθJA.001 0.PK=TA+PDM.01 0. tA (ms) Figure 12: Single Pulse Avalanche capability (Note C) 80 70 Current rating ID(A) 60 50 40 30 20 10 0 0 100 125 150 TCASE (°C) ° Figure 14: Current De-rating (Note F) 25 50 75 175 Power (W) TCASE (°C) Figure 13: Power De-rating (Note F) 10000 TA=25°C 1000 100 10 1 0.0001 0.1. single pulse 1 40 0.01.1 10 1000 0 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to18 Ambient (Note H) 0. 0.001 0.3.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 8: May 2011 www.AOD403/AOI403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000.02.00001 0. 0. 0. 0.05.001 10 Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ.01 0.00001 0.5.0 Power Dissipation (W) Time in avalanche.com Page 5 of 6 . 0.

aosmd.com + - + - + Charge ton td(on) tr td(off) toff tf - + - Vds Qgs Qgd Vdd 90% 10% E AR= 1/2 LIAR 2 Vds BVDSS Vdd Id I AR Q rr = .AOD403/AOI403 Gate Charge Test Circuit & Waveform Vgs Qg -10V VDC VDC DUT Vgs Ig Resistive Switching Test Circuit & Waveforms RL Vds Vgs Vgs Rg DUT VDC Vgs Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L Vds Id Vgs Rg DUT Vgs Vgs Vgs VDC Diode Recovery Test Circuit & Waveforms Vds + DUT Vgs t rr Vds Isd Vgs Ig L VDC + Vdd -Vds Rev 8: May 2011 www.Idt -Isd -I F dI/dt -I RM Vdd Page 6 of 6 .

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