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Smart Lowside Power Switch

HITFETâ BSP 75N

Data Sheet V1.0 Features • • • • • • • Logic Level Input Input protection (ESD) Thermal shutdown with auto restart Overload protection Short circuit protection Overvoltage protection Current limitation

Application • All kinds of resistive, inductive and capacitive loads in switching applications • µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt Powernet • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions. Type HITFETâ BSP 75N Ordering Code Q67060-S7215 Package P-SOT223-4

Product Summary Parameter Continuous drain source voltage On-state resistance Current limitation Nominal load current Clamping energy Symbol Value 60 550 1 0.7 550 Unit V mΩ A A mJ

VDS RDS(ON) ID(lim) ID(Nom) EAS

Data Sheet V1.0

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2003-01-10

pin3 and TAB are internally connected Data Sheet V1.0 2 TAB 2003-01-10 . activates output and supplies internal logic Output to the load Ground.HITFETâ BSP 75N Vbb HITFET Logic Over voltage Protection M OUTPUT Stage DRAIN IN dV/dt limitation ESD Over temperature Protection Short circuit Protection Current Limitation SOURCE Figure 1 Block Diagram SOURCE 1 2 3 IN DRAIN SOURCE Figure 2 Pin Configuration Pin Definitions and Functions Pin No. 1 2 3 + TAB Symbol IN DRAIN SOURCE Function Input.

• Over temperature and short circuit protection: This protection is based on sensing the chip temperature. Data Sheet V1.0 3 2003-01-10 . Protection Functions • Over voltage protection: An internal clamp limits the output voltage at VDS(AZ) (min. The location of the sensor ensures a fast and accurate junction temperature detection.HITFETâ BSP 75N Circuit Description The BSP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic level input.).4 .1. It is designed for all kind of resistive and inductive loads (relays. an open drain DMOS output stage and integrated protection functions. solenoid) in automotive and industrial applications. The device is ESD protected according Human Body Model (4 kV) and load dump protected (see Maximum Ratings).5 A typ. • Current limitation: By means of an internal current measurement the drain current is limited at ID(lim) (1. 10 K enables an automatic restart by cooling. This operation leads to an increasing junction temperature until the over temperature threshold is reached. so power dissipation may exceed the capability of the heatsink. 60V) when inductive loads are switched off. A hysteresis of typ. Over temperature shutdown occurs at minimum 150 °C. If the current limitation is active the device operates in the linear region.

DIN 40 040 IEC climatic category.1993 DIN humidity category.2 … +10 V -0. Device on epoxy pcb 40 mm × 40 mm × 1. RL = 22 Ω ID(ISO) = 0. VP = 13. Data Sheet V1.8 550 W mJ V 80 47 mA – Tj Tstg Ptot Power dissipation (DC) Unclamped single pulse inductive energy EAS VLoadDump – – Load dump protection 2) IN = low or high (8 V). See also page 7. RI = internal resistance of the load dump test pulse generator LD200. DIN IEC 68-1 Thermal Resistance Junction soldering point Junction .ambient4) 1) 2) 3) 4) VESD 4000 V – – E 40/150/56 – – – – RthJS RthJA ≤ 10 ≤ 70 K/W – K/W – See also Figure 7 and Figure 10. – Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D.2V ≤ VIN ≤ 10V VIN<-0.7 A.2 … +20 V no limit | IIN |≤ 2mA -40 … +150 °C -55 … +150 °C 1. standard S5.0 4 2003-01-10 .1 .HITFETâ BSP 75N Absolute Maximum Ratings Tj = 25 °C. VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. Vbb =32V VLoadDump = VP + VS. RL = 50 Ω IN = high (8 V).5 V RI3) = 2 Ω. td = 400 ms.2V or VIN>10V Operating temperature range Storage temperature range 1) Symbol Values 60 36 Unit Remarks V V – – – – VDS VDS VIN VIN IIN -0.7 and EOS/ESD assn. method 3015.5 mm with 6 cm2 copper area for pin 4 connection. unless otherwise specified Parameter Continuous drain source voltage Drain source voltage for short circuit protection Continuous input voltage Peak input voltage Continuous Input Current -0.

typ. ID = 0 A: IIN(3) On-state resistance µA – 100 200 – 250 400 1000 1500 2000 – – 490 850 430 750 – 675 1350 550 1000 – ID = 10 mA. ID < ID(lim): IIN(1) current limitation mode. max.7 A. VIN = 10 V A Tj = 25 °C Tj = 150 °C Nominal load current RDS(on) – – ID(Nom) 0. Tj < 150 °C VIN = 10 V. VDS = 32 V.5 V Input current: normal operation. VBB = 12 V Data Sheet V1. unless otherwise specified Parameter Symbol Limit Values min. VBB = 12 V RL = 22 Ω. VDS = 12 V Dynamic Characteristics 1) Turn-on time VIN to 90% ID: ton – 10 20 µs Turn-off time VIN to 10% ID: toff – 10 20 µs RL = 22 Ω. VDS = 0.9 A VBB = 12 V. VIN = 0 to 10 V.8 2. TS = 85 °C. Tj = -40 … +150 °C VIN = 0 V.7 Current limit ID(lim) 1 1.0 5 2003-01-10 .7 A. ID = ID(lim): IIN(2) After thermal shutdown.5 V. VIN = 10 to 0 V.5 1.HITFETâ BSP 75N Electrical Characteristics Tj = 25 °C. VIN = 5 V mΩ ID = 0. Unit Test Conditions Static Characteristics Drain source clamp voltage Off state drain current VDS(AZ) 60 IDSS – – – 75 5 V µA Input threshold voltage VIN(th) 1 1. Tj = -40 … +150 °C ID = 10 mA VIN = 5 V Tj = 25 °C Tj = 150 °C On-state resistance RDS(on) mΩ ID = 0.

5 max.7 A See also Figure 9. typ. VBB = 12 V Protection Functions2) Thermal overload trip temperature Thermal hysteresis Tjt 150 – 550 200 165 10 – – 180 – – – °C Κ mJ – – ∆Tjt Unclamped single pulse inductive EAS Tj = 25 °C energy Tj = 150 °C Inverse Diode Continuous source drain voltage 1) 2) ID(ISO) = 0. Protection functions are not designed for continuous.7 A.0 6 2003-01-10 . -ID = 2 × 0. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. repetitive operation.HITFETâ BSP 75N Electrical Characteristics (cont’d) Tj = 25 °C. VIN = 10 to 0 V. Fault conditions are considered as “outside” normal operating range. Data Sheet V1. unless otherwise specified Parameter Slew rate on Symbol Limit Values min. 10 V/ µs V/ µs Unit Test Conditions 70 to 50% VBB: -dVDS/ – dton 50 to 70% VBB: dVDS/ dtoff – Slew rate off 10 15 RL = 22 Ω. VBB = 32 V VSD – 1 – V VIN = 0 V. VBB = 12 V RL = 22 Ω. VIN = 0 to 10 V.

HITFETâ BSP 75N EMC-Characteristics The following EMC-Characteristics outline the behavior of typical devices. to ISO 7637 Test1) Pulse 1 2 3a 3b 4 5 1) Test Conditions Symbol TA VS RL PWM DC Value 23 ±5 13. They are not part of any production test. One or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. 50Ω 0. Test Level -200V +200V -200V +200V -7V 175V Test Result ON C C C C C E(65V) OFF C C C C C E(75V) Pulse Cycle Time and Generator Impedance 500ms . Table 1 Parameter Temperature Supply Voltage Load Operation mode DUT specific Fast electrical transients acc. 2Ω The test pulses are applied at VS Definition of functional status Class C E Content All functions of the device are performed as designed after exposure to disturbance.0 7 2003-01-10 . Data Sheet V1. 10Ω 500ms . 50Ω 100ms . D=0.5 ON / OFF Ω – – VIN(’HIGH’)=5V Max.01Ω 400ms . The value after the character shows the limit.5 27 – – Unit °C V Remark – – ohmic fINx=100Hz. 10Ω 100ms .

Vbb Susceptibility at DC-ON/OFF and at PWM Figure 3 Test circuit for ISO pulse 40 35 Conducted Emissions dBm 30 25 Acc. Broadband Artificial Network (short: BAN) consists of the same choke (5µH at 1MHz) and the same 150 Ohm-matching network as for emission measurement for defined de coupling and high reproducibility.1 1 10 100 1000 VBB 150Ω / 13-N BAN BSP75N RL f / MHz IN DRAIN SOURCE HF VBB Test circuit for conducted susceptibility BSP75N IN DRAIN SOURCE 150Ω-Network Ω 1) RL 2) 2) Figure 4 Test circuit for conducted emission 1) 8 For defined de coupling and high reproducibility a defined choke (5µH at 1MHz) is inserted in the Vbb-Line. Vbb Emissions at PWM-mode with 150Ω-matching network 100 90 80 70 60 50 Noise level BSP75N 150ohm Class6 150ohm Class1 20 15 10 Limit OUT. 10% at OUT Typ. ON OUT.0 2003-01-10 . PWM 5 0 1 10 100 1000 f / MHz dBµV 150Ω / 8-H 40 30 20 10 0 -10 -20 0. Data Sheet V1.HITFETâ BSP 75N Conducted Susceptibility VBB PULSE Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection) RL BSP75N IN DRAIN SOURCE Direct Power Injection: Forward Power CW Failure Criteria: Amplitude or frequency variation max. OFF OUT. IEC 61967-4 (1Ω/150Ω method) Typ.

LOAD VAZ Drain VDS Power DMOS Source ID Figure 7 Inductive and Over voltage Output Clamp Data Sheet V1.0 9 2003-01-10 .HITFETâ BSP 75N Block diagram VBB ID uC Vcc BSP75N IN D SOURCE IIN HITFET IN DRAIN SOURCE VDS Vbb Px.1 GND VIN Figure 8 Figure 5 Terms Application Circuit IN SOURCE Figure 6 Input Circuit (ESD protection) ESD zener diodes are not designed for DC current.

0 10 2003-01-10 .HITFETâ BSP 75N Timing diagrams VIN VIN t VDS t ID 0.9*ID 0.1*ID ton toff t ID(lim) ID t ϑj t thermal hysteresis t Figure 11 Short circuit Figure 9 Switching a Resistive Load VIN VDS(AZ) VDS VBB t ID t t Figure 10 Switching an Inducitve Load Data Sheet V1.

0 11 2003-01-10 .HITFETâ BSP 75N 1 Max.5 200 0 -5 0 -2 5 0 25 50 0 °C 75 100 125 150 T j -50 -25 0 25 50 75 °C 1 00 12 5 15 0 T j Data Sheet V1. 0 . input threshold voltage VIN(th) = f(Tj). ID = 0. 600 1 400 0. 1. ID = 10 mA. m a x.5 R ON V IN (th ) mΩ 1200 V2 1000 typ . m a x.2 600 500 typ .8 400 300 0 .7 A.5 800 typ .7 A. VIN = 5 V 1400 4 Typ. ID = 0. 1 .4 200 100 0 0 25 50 75 100 0 °C 125 150 -50 -25 0 25 50 °C 75 1 0 0 1 2 5 15 0 T j T Amb 3 On-state resistance RON = f(Tj).6 W 800 700 m ax. VIN = 10 V 10 0 0 P to t R ON 9 0Ω m0 1 . VDS = 12 V 2. allowable power dissipation Ptot = f(TAmb) 2 2 On-state resistance RON = f(Tj).

A 1 .0 0 0 0 1 0 . Tj = 25 °C 2000 6 Typ.2 0 .1 10 V s 1000 IN tP 100000 Data Sheet V1. VDS = 12 V. A 1 .1 0 .0 5 0 . VDS = 12 V.5 0 0 2 4 6 0 V 8 10 -5 0 -2 5 0 25 50 75 °C 100 125 150 T j V IN 7 Typ.5 Z th (J A ) 1 K /W 0 1 D= 0 . ID = 0. short circuit current ID(SC) = f(VIN).0 0 1 0 . on-state resistance RON = f(VIN). current limitation ID(lim) = f(Tj).0 2 0 .5 0 0 2 4 6 V 8 10 0 .0 1 0 1 0 .1 0 .7 A. 1000 1 500 0 . Parameter: D = tp/T 100 I D (S C ) typ .0 12 2003-01-10 . transient thermal impedance ZthJA = f(tp) @ 6cm². Tj = 25 °C 2 8 Max. VIN = 10 V 2 R ON I D (lim ) 1m0 0 5Ω typ .5 typ .5 0 .HITFETâ BSP 75N 5 Typ.

28 ±0.5 ±0.6 ±0. trays etc.1 0.1 2 3 2.0 13 3.2 acc.1 max 1. are contained in our Data Book “Package Information” SMD = Surface Mounted Device Data Sheet V1.3 15˚max 4 1 0.3 4.5 min 0.2 3 ±0. to DIN 6784 Dimensions in mm 2003-01-10 .5 ±0.25 M A 0.04 0.1 B 7 ±0.6 0.7 ±0.25 M B GPS05560 Sorts of Packing Package outlines for tubes.2 +0.HITFETâ BSP 75N Package Outlines P-SOT223-4 (Small Outline Transistor) A 6.

descriptions and charts stated herein. Information For further information on technology. Data Sheet V1. We hereby disclaim any and all warranties. If they fail.0 14 2003-01-10 .HITFETâ BSP 75N Published by Infineon Technologies AG. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. For information on the types in question please contact your nearest Infineon Technologies Office. it is reasonable to assume that the health of the user or other persons may be endangered. regarding circuits. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies. delivery terms and conditions and prices please contact your nearest Infineon Tech-nologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Life support devices or systems are in-tended to be implanted in the human body. D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Warnings Due to technical requirements components may contain dangerous substances. or to affect the safety or effectiveness of that device or system. Infineon Technologies is an approved CECC manufacturer. if a failure of such components can reasonably be expected to cause the failure of that life-support device or system. Terms of delivery and rights to technical change reserved. including but not limited to warranties of non-infringement. or to support and/ or maintain and sustain and/or protect human life.-Martin-Strasse 76. Bereichs Kommunikation St.