You are on page 1of 5

KSE13003

KSE13003
High Voltage Switch Mode Applications
High Speed Switching Suitable for Switching Regulator and Motor Control

TO-126 2.Collector 3.Base

1. Emitter

NPN Silicon Transistor


Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 700 400 9 1.5 3 0.75 20 150 - 65 ~ 150 Units V V V A A A W C C

Electrical Characteristics TC=25C unless otherwise noted


Symbol BVCEO IEBO hFE VCE(sat) Parameter Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector Emitter Saturation Voltage Test Condition IC = 5mA, IB = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC =1A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A IC = 1.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.1A VCC =125V, IC = 1A IB1 = 0.2A, IB2 = - 0.2A RL = 125 4 1.1 4.0 0.7 21 8 5 Min. 400 Typ. Max. 10 40 0.5 1 3 1 1.2 V V V V V pF MHz s s s Units V A

VBE(sat) Cob fT tON tSTG tF

*Base Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time

* Pulse Test: Pulse Width=5ms, Duty Cycle10%

2001 Fairchild Semiconductor Corporation

Rev. A1, September 2001

KSE13003

Typical Characteristics

2.0

100

VCE = 2V

IC[A], COLLECTOR CURRENT

1.6

IB =
1.2

250mA

hFE, DC CURRENT GAIN

mA 500

A 450m 400mA

A 350m 300mA

10

200mA 150mA 100mA IB = 50mA

0.8

0.4

IB = 0
0.0 0 1 2 3 4 5

0.1 0.01

0.1

10

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10

10

IC = 4 IB

tSTG, tF[s], SWITCH TIME

tSTG
1

VBE(sat)

tF
0.1

0.1

V CE(sat)

0.01 0.01

0.1

10

0.01 0.1

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Switching Time

10

40

ICMAX. (pulse)

35

IC[A], COLLECTOR CURRENT

IC MAX. (DC)
1

PC[W], POWER DISSIPATION


1000

s 10

s 1m

s 5m

30

s 0 10

25

20

15

0.1

10

0.01 1 10 100

0 0 25 50
o

75

100

125

150

175

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

Figure 6. Power Derating

2001 Fairchild Semiconductor Corporation

Rev. A1, September 2001

KSE13003

Package Demensions

TO-126
0.10

3.90

8.00 0.30

3.25 0.20

14.20MAX

3.20 0.10

11.00

0.20

(1.00) 0.75 0.10 1.60 0.10 0.75 0.10


0.30

(0.50) 1.75 0.20

#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]

13.06

16.10

0.20

0.50 0.05

+0.10

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. A1, September 2001

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOS EnSigna FACT FACT Quiet Series

FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE

OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER

SMART START STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TruTranslation TinyLogic UHC UltraFET

VCX

STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY


FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms


Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2001 Fairchild Semiconductor Corporation

Rev. H4

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.