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FGH40N60SFD 600V, 40A Field Stop IGBT

July 2008

FGH40N60SFD
600V, 40A Field Stop IGBT
Features
High current capability Low saturation voltage: VCE(sat) =2.3V @ IC = 40A High input impedance Fast switching RoHS compliant

tm

General Description
Using Novel Field Stop IGBT Technology, Fairchilds new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.

Applications
Induction Heating, UPS, SMPS, PFC

C G

COLLECTOR (FLANGE)

Absolute Maximum Ratings


Symbol
VCES VGES IC ICM (1) PD TJ Tstg TL

Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C
o o

Ratings
600 20 80 40 120 290 116 -55 to +150 -55 to +150 300

Units
V V A A A W W
o o o

C C C

Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA

Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Typ.
-

Max.
0.43 1.45 40

Units
o o

C/W C/W

oC/W

2008 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FGH40N60SFD Rev.C

FGH40N60SFD 600V, 40A Field Stop IGBT

Package Marking and Ordering Information


Device Marking
FGH40N60SFD

Device
FGH40N60SFDTU

Package
TO-247

Packaging Type
Tube

Max Qty Qty per Tube


30ea

per Box
-

Electrical Characteristics of the IGBT


Symbol
Off Characteristics BVCES BVCES TJ ICES IGES

TC = 25C unless otherwise noted

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

600 -

0.6 -

250 400

V V/oC A nA

On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 40A, VGE = 15V IC = 40A, VGE = 15V, TC = 125oC 4.0 5.0 2.3 2.5 6.5 2.9 V V V

Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2110 200 60 pF pF pF

Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 40A, VGE = 15V VCC = 400V, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 25oC 25 42 115 27 1.13 0.31 1.44 24 43 120 30 1.14 0.48 1.62 120 14 58 54 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC

FGH40N60SFD Rev. C

www.fairchildsemi.com

FGH40N60SFD 600V, 40A Field Stop IGBT

Electrical Characteristics of the Diode


Symbol
VFM trr Qrr

TC = 25C unless otherwise noted

Parameter
Diode Forward Voltage IF = 20A

Test Conditions
TC = 25oC TC = 125oC TC = 25oC IES =20A, dIES/dt = 200A/s TC = 125oC
o

Min.
-

Typ.
1.95 1.85 45 140 75 375

Max
2.6 -

Units
V

Diode Reverse Recovery Time

ns

Diode Reverse Recovery Charge

TC = 25oC TC = 125 C

nC

FGH40N60SFD Rev.C

www.fairchildsemi.com

FGH40N60SFD 600V, 40A Field Stop IGBT

Typical Performance Characteristics


Figure 1. Typical Output Characteristics
120 100
Collector Current, IC [A]
TC = 25 C 20V 15V
o

Figure 2. Typical Output Characteristics


120 100
Collector Current, IC [A]
TC = 125 C
o

20V

15V

12V

80 60 40

12V

80 60 40 20
10V

10V

20
VGE = 8V

VGE = 8V

0 0.0

1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V]

6.0

0 0.0

1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V]

6.0

Figure 3. Typical Saturation Voltage Characteristics


80
Common Emitter VGE = 15V

Figure 4. Transfer Characteristics


120
Common Emitter VCE = 20V

Collector Current, IC [A]

60

TC = 25 C TC = 125 C
o

Collector Current, IC [A]

TC = 25 C TC = 125 C
o

80

40

40

20

0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4

0 6 8 10 12 Gate-Emitter Voltage,VGE [V] 13

Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level


4.0
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V

Figure 6. Saturation Voltage vs. VGE


20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = -40 C
o

3.5
80A

16

3.0 2.5
40A

12

8
80A

2.0 1.5 1.0 25


IC = 20A

4
IC = 20A

40A

50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]

8 12 16 Gate-Emitter Voltage, VGE [V]

20

FGH40N60SFD Rev. C

www.fairchildsemi.com

FGH40N60SFD 600V, 40A Field Stop IGBT

Typical Performance Characteristics


Figure 7. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
o

Figure 8. Saturation Voltage vs. VGE


20
Common Emitter
o

Collector-Emitter Voltage, VCE [V]

TC = 25 C

TC = 125 C

16

16

12

12

8
40A 80A

8
40A 80A

4
IC = 20A

4
IC = 20A

0
4 8 12 16 Gate-Emitter Voltage, VGE [V] 20

8 12 16 Gate-Emitter Voltage, VGE [V]

20

Figure 9. Capacitance Characteristics


5000
Common Emitter VGE = 0V, f = 1MHz

Figure 10. Gate charge Characteristics


15
Common Emitter
o

4000
Capacitance [pF]

Ciss

TC = 25 C

Gate-Emitter Voltage, VGE [V]

TC = 25 C

12
Vcc = 100V 200V 300V

3000
Coss

2000

1000
Crss

0 0.1

1 10 Collector-Emitter Voltage, VCE [V]

30

50 100 Gate Charge, Qg [nC]

150

Figure 11. SOA Characteristics


400

Figure 12. Turn-on Characteristics vs. Gate Resistance


200
10s

100
Collector Current, Ic [A]

100
10
100s 1ms

Switching Time [ns]

1
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature

10 ms DC

tr

0.1

td(on)

Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C TC = 125 C


o o

0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000

10 0 10 20 30 40 Gate Resistance, RG [] 50

FGH40N60SFD Rev. C

www.fairchildsemi.com

FGH40N60SFD 600V, 40A Field Stop IGBT

Typical Performance Characteristics


Figure 13. Turn-off Characteristics vs. Gate Resistance
5500
Common Emitter VCC = 400V, VGE = 15V IC = 40A

Figure 14. Turn-on Characteristics vs. Collector Current


500
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o

Switching Time [ns]

TC = 125 C

Switching Time [ns]

1000

TC = 25 C td(off)

TC = 125 C

tr

100

100
tf

td(on)

10 0 10 20 30 40 50
Gate Resistance, RG []

10 20

40

60

80

Collector Current, IC [A]

Figure 15. Turn-off Characteristics vs. Collector Current


500
Common Emitter VGE = 15V, RG = 10 TC = 25 C td(off)
o o

Figure 16. Switching Loss vs. Gate Resistance


10
Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C TC = 125 C
o o

Switching Loss [mJ]

Switching Time [ns]

TC = 125 C

Eon

100
tf

1
Eoff

10 20

0.2 0.3

40

60

80

10

Collector Current, IC [A]

20 30 40 Gate Resistance, RG []

50

Figure 17. Switching Loss vs. Collector Current


30 10
Switching Loss [mJ]
Common Emitter VGE = 15V, RG = 10 TC = 25 C TC = 125 C
o o

Figure 18. Turn off Switching SOA Characteristics


200 100
Collector Current, IC [A]

Eon

Eoff

10

0.1
1

Safe Operating Area VGE = 15V, TC = 125 C


o

20

30

40

50

60

70

80

10

100

1000

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V]

FGH40N60SFD Rev. C

www.fairchildsemi.com

FGH40N60SFD 600V, 40A Field Stop IGBT

Typical Performance Characteristics


Figure 19. Forward Characteristics
80

Figure 20. Typical Reverse Current vs. Reverse Voltage


200 100
TJ = 125 C
o

Forward Current, IF [A]

10

TJ = 125 C TJ = 25 C TJ = 75 C
o o

Reverse Current , IR [A]

10
TJ = 75 C
o

TC = 25 C TC = 75 C TC = 125 C
o o

0.1

TJ = 25 C

0.2 0 1 2 3 Forward Voltage, VF [V] 4

0.01 50

200 400 Reverse Voltage, VR [V]

600

Figure 21. Stored Charge


100
Stored Recovery Charge, Qrr [nC]

Figure 22. Reverse Recovery Time


60
Reverse Recovery Time, trr [ns]

80

200A/s

50
di/dt = 100A/s

60
di/dt = 100A/s

200A/s

40

40

20 5 10 20 30 Forward Current, IF [A] 40

30 5 10 20 30 Forward Current, IF [A] 40

Figure 23.Transient Thermal Impedance of IGBT


1
Thermal Response [Zthjc]

0.5

0.1

0.2 0.1 0.05 0.02 0.01 single pulse

0.01

PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC

1E-3 1E-5

1E-4

1E-3

0.01

0.1

Rectangular Pulse Duration [sec]

FGH40N60SFD Rev. C

www.fairchildsemi.com

FGH40N60SFD 600V, 40A Field Stop IGBT

Mechanical Dimensions

TO-247AB (FKS PKG CODE 001)

Dimensions in Millimeters

FGH40N60SFD Rev. C

www.fairchildsemi.com

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