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SNUBBERLESS TRIAC
FEATURES ITRMS = 16 A VDRM = VRRM = 600V to 700V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734
s s s s s
A2
A1
DESCRIPTION The T1620-600W/700W and 1630-600W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) Parameter
G A1 A2
ISOWATT220AB (Plastic)
Value Tc= 75C tp = 16.7 ms (1 cycle, 60 Hz) tp = 10 ms (1/2 cycle, 50 Hz) 16 165 195 190 20 100 - 40 to + 150 - 40 to + 125 260
Unit A A
I2t dI/dt
I2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/s.
A2s A/s
Tstg Tj Tl
Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5 mm from case
C C
Value Symbol VDRM VRRM Parameter 600 Repetitive peak off-state voltage Tj = 125C 600 700 700 V Unit
1/5
GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IG = 500mA dlG/dt= 3As IT= 250mA Gate open Tj= 25C Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 125C Linear slope up to Gate open VD=67%VDRM (dI/dt)c = 9 A/ms (see note) Tj= 125C Tj= 125C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP MAX MAX MAX MAX MIN MIN 200 10 35 1.5 10 2 300 20 T1620 20 1.5 0.2 2 50 V A mA V/s V/s T1630 30 Unit mA V V s IGM = 4 A (tp = 20 s)
* For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 9 A/ms, the (dV/dt)c is always lower than 10V/s, and, therefore, it is unnecessary to use a snuber R-C network accross T1620W / T1630W triacs.
2/5
P(W)
25 20 15 10 5
o
Tcase (oC)
Rth = 0 o C/W o 1 C/W o 2 C/W 4 o C/W
= 180 = 120 = 90
o o
25
20 15
= 60 = 30
-90 10 5
Tamb ( C)
o
I T(RMS) (A) 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
0 0
20
Fig. 4: Thermal transient impedance junction to case and junction to ambient versus pulse duration.
Zth/Rth 1
Zth(j-c)
T(RMS)
(A)
20
15
= 180
o
0.1
Zth(j-a)
10
0.01
tp(s)
1E+2 5E+2
Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C]
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 Igt
Fig. 6: Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
200
Ih[Tj] Ih[Tj=25 o C]
Tj initial = 25 C
150
100
Ih
50
Tj(oC)
0 20 40 60 80 100 120 140
0 1
Number of cycles
10 100
1000
3/5
I TM (A)
Tj initial = 25 C
o
1000
1000
I TSM
I2 t
Tj initial o 25 C
100
100
Tj max
10
tp(ms)
VTM (V)
10 1
10
1 0
0.5
1.5
2.5
3.5
4.5
5.5
4/5
16.00 typ.
0.630 typ.
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