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T1620-600W / 700W T1630-600W

SNUBBERLESS TRIAC

FEATURES ITRMS = 16 A VDRM = VRRM = 600V to 700V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734
s s s s s

A2

A1

DESCRIPTION The T1620-600W/700W and 1630-600W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) Parameter

G A1 A2

ISOWATT220AB (Plastic)

Value Tc= 75C tp = 16.7 ms (1 cycle, 60 Hz) tp = 10 ms (1/2 cycle, 50 Hz) 16 165 195 190 20 100 - 40 to + 150 - 40 to + 125 260

Unit A A

I2t dI/dt

I2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/s.

tp = 10 ms Repetitive F = 50 Hz Non Repetitive

A2s A/s

Tstg Tj Tl

Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5 mm from case

C C

Value Symbol VDRM VRRM Parameter 600 Repetitive peak off-state voltage Tj = 125C 600 700 700 V Unit

September 2001 - Ed: 1A

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T1620-600W / 1620-700W and T1630-600W


THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for A.C (360 conduction angle) Parameter Value 50 2.5 Unit C/W C/W

GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IG = 500mA dlG/dt= 3As IT= 250mA Gate open Tj= 25C Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 125C Linear slope up to Gate open VD=67%VDRM (dI/dt)c = 9 A/ms (see note) Tj= 125C Tj= 125C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP MAX MAX MAX MAX MIN MIN 200 10 35 1.5 10 2 300 20 T1620 20 1.5 0.2 2 50 V A mA V/s V/s T1630 30 Unit mA V V s IGM = 4 A (tp = 20 s)

ITM= 22.5A tp= 380s VDRM rated VRRM rated

* For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 9 A/ms, the (dV/dt)c is always lower than 10V/s, and, therefore, it is unnecessary to use a snuber R-C network accross T1620W / T1630W triacs.

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T1620-600W / 1620-700W and T1630-600W


Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact.
P (W)
180
O

P(W)
25 20 15 10 5
o

Tcase (oC)
Rth = 0 o C/W o 1 C/W o 2 C/W 4 o C/W

= 180 = 120 = 90
o o

25

-60 -70 -80

20 15

= 60 = 30

-90 10 5
Tamb ( C)
o

-100 -110 -120 40 60 80 100 120 140

I T(RMS) (A) 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

0 0

20

Fig. 3: RMS on-state current versus case temperature.

Fig. 4: Thermal transient impedance junction to case and junction to ambient versus pulse duration.
Zth/Rth 1
Zth(j-c)

T(RMS)

(A)

20

15
= 180
o

0.1
Zth(j-a)

10
0.01

5 Tcase( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130


1E-3 1E-2 1E-1 1E+0 1E+1
o

tp(s)

1E+2 5E+2

Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C]
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 Igt

Fig. 6: Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
200

Ih[Tj] Ih[Tj=25 o C]

Tj initial = 25 C

150

100

Ih
50

Tj(oC)
0 20 40 60 80 100 120 140
0 1

Number of cycles
10 100

1000

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T1620-600W / 1620-700W and T1630-600W


Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t.
I TSM (A). I2 t (A2 s)

Fig. 8: On-state characteristics (maximum values).

I TM (A)
Tj initial = 25 C
o

1000

1000

I TSM
I2 t
Tj initial o 25 C

100

100
Tj max

10

Tj max Vto =0.9V Rt =0.024

tp(ms)

VTM (V)

10 1

10

1 0

0.5

1.5

2.5

3.5

4.5

5.5

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T1620-600W / 1620-700W and T1630-600W


PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Cooling method : C Marking : Type number Weight : 2.1g Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N. Millimeters Min. 4.40 2.50 2.50 0.40 0.75 1.15 1.15 4.95 2.40 10.00 28.60 9.80 15.90 9.00 3.00 Max. 4.60 2.70 2.75 0.70 1.00 1.70 1.70 5.20 2.70 10.40 30.60 10.60 16.40 9.30 3.20 Inches Min. 0.173 0.098 0.098 0.016 0.030 0.045 0.045 0.195 0.094 0.394 1.125 0.386 0.626 0.354 0.118 Max. 0.181 0.106 0.108 0.028 0.039 0.067 0.067 0.205 0.106 0.409 1.205 0.417 0.646 0.366 0.126

16.00 typ.

0.630 typ.

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5

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