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PD -93991A

AUTOMOTIVE MOSFET
Typical Applications
q q q q q

IRF1405
HEXFET® Power MOSFET
D

Electric Power Steering (EPS) Anti-lock Braking System (ABS) Wiper Control Climate Control Power Door Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G

VDSS = 55V RDS(on) = 5.3mΩ
S

Benefits
q q q q q q

ID = 169A†

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

TO-220AB

Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy‡ Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw

Max.
169† 118† 680 330 2.2 ± 20 560 See Fig.12a, 12b, 15, 16 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m)

Units
A W W/°C V mJ A mJ V/ns °C

Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

Typ.
––– 0.50 –––

Max.
0.45 ––– 62

Units
°C/W

www.irf.com

1
3/25/01

1Ω ––– VGS = 10V „ D Between lead. 5 ––– VGS = 0V. ‚ Starting TJ = 25°C. ‡ Limited by T Jmax . 11).057 4.5 5480 1210 280 5210 900 1500 Max. IS = 101A.irf. duty cycle ≤ 2%.0V. ––– 0.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.3 V TJ = 25°C.5 7. ID = 250µA ––– V/°C Reference to 25°C. junction temperature.0 V VDS = 10V. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance … Min. 55 ––– ––– 2. ––– ––– 1. … Coss eff. ƒ = 1. VGS = 0V µA 250 VDS = 44V. VGS = 0V.IRF1405 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. ID = 1mA 5. TJ = 150°C 200 VGS = 20V nA -200 VGS = -20V 260 ID = 101A 66 nC VDS = 44V 93 VGS = 10V„ ––– VDD = 38V ––– ID = 110A ns ––– RG = 1.12a. IAS = 101A. VDD ≤ V(BR)DSS. ƒ ISD ≤ 101A. Units Conditions D MOSFET symbol ––– ––– 169† showing the A G integral reverse ––– ––– 680 S p-n junction diode. Max. VDS = 44V. See Fig. TJ ≤ 175°C „ Pulse width ≤ 400µs. Typ. 12b. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .0MHz ––– VGS = 0V.6 ––– ––– ––– ––– ––– ––– 170 44 62 13 190 130 110 4.25in. ƒ = 1. 16 for typical repetitive avalanche performance. VDS = 0V to 44V Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min.3 mΩ VGS = 10V. ID = 250µA ––– S VDS = 25V. pulse width limited by max. di/dt ≤ 210A/µs. 15.com .11mH RG = 25Ω. (See fig. Calculated continuous current based on maximum allowable junction temperature.0MHz ––– VGS = 0V. L = 0. Units Conditions ––– V VGS = 0V. VGS = 0V „ ––– 88 130 ns TJ = 25°C. ––– 6mm (0.0MHz. IF = 101A ––– 250 380 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. ID = 110A 20 VDS = 55V. Package limitation current is 75A. see Fig. (See Figure 12). † 2 www. VDS = 1. ID = 101A „ 4.0 69 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ.

5V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 4.IRF1405 1000 VGS 15V 10V 8.0V 7.5V 5.1 VDS .5V TOP 1000 I D .1 10 0. Drain-to-Source Current (A) 100 10 I D .0V 6.irf.5 1 4 6 8 V DS = 25V 20µs PULSE WIDTH 10 12 0.0V 6. Typical Output Characteristics Fig 2.0V 5. Temperature www. Drain-to-Source Voltage (V) VDS . Normalized On-Resistance Vs.5V 5. Drain-to-Source On Resistance (Normalized) TJ = 25 ° C ID = 169A I D .5V TOP 100 4.0 TJ = 175 ° C RDS(on) .0 0. Typical Output Characteristics 1000 3.0V BOTTOM 4.com 3 . Junction Temperature ( °C) Fig 3.0V 5.0 1. Typical Transfer Characteristics Fig 4. Drain-to-Source Current (A) VGS 15V 10V 8.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS . Drain-to-Source Current (A) 2.0V BOTTOM 4.5 100 2.5V 20µs PULSE WIDTH TJ = 175 °C 1 10 100 1 0.5 10 1. Drain-to-Source Voltage (V) Fig 1.0V 7. Gate-to-Source Voltage (V) TJ .

5 3.0 V GS = 0 V 0. Typical Gate Charge Vs. Drain-to-Source Voltage (V) Fig 7.com . Maximum Safe Operating Area 4 www.IRF1405 100000 20 VGS = 0V.0 2.0 1 1 TC = 25 ° C TJ = 175 ° C Single Pulse 10 100 VSD . Typical Capacitance Vs.irf. Drain-to-Source Voltage Fig 6. Total Gate Charge (nC) Fig 5. Reverse Drain Current (A) TJ = 175 ° C 100 I D .5 1. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD . Typical Source-Drain Diode Forward Voltage Fig 8.5 2. C ds SHORTED Crss = C gd Coss = C ds + C gd ID = 101A VDS = 44V VDS = 27V VGS .0 1. Drain Current (A) 1000 10us 100 100us 1ms TJ = 25 ° C 10 10 10ms 1 0. Capacitance(pF) 10000 Ciss 12 Coss 1000 8 Crss 4 100 1 10 100 0 0 60 120 FOR TEST CIRCUIT SEE FIGURE 13 180 240 300 VDS .Source-to-Drain Voltage (V) VDS . Gate-to-Source Voltage (V) 16 C. f = 1 MHZ Ciss = C + C gs gd. Drain-to-Source Voltage (V) Q G .

Drain Current (A) -VDD 120 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0. Maximum Effective Transient Thermal Impedance. Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1.1 0. Duty factor D = t 1 / t 2 2.001 0.irf. Rectangular Pulse Duration (sec) Fig 11.50 0.001 0.05 0. Peak T J = P DM x Z thJC + TC 0.com 5 .20 0.01 0.1 % 80 Fig 10a. Switching Time Test Circuit 40 VDS 90% 0 25 50 75 100 125 150 175 TC .1 0.T.0001 0.U.10 0. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0. Maximum Drain Current Vs.01 0.02 0. Case Temperature Fig 10b. + I D . Junction-to-Case www.00001 t1 .IRF1405 200 LIMITED BY PACKAGE 160 VDS VGS RG RD D.

5 -75 -50 -25 0 25 50 75 100 125 150 175 T J .VD D A 600 0 . Drain Current 10 V QGS VG VGS(th) .T.0 1 Ω Fig 12a.3µF 2.U .IRF1405 1 5V 1200 EAS . Unclamped Inductive Waveforms QG Fig 12c.com . Basic Gate Charge Waveform Current Regulator Same Type as D. Variace ( V ) QGD 4.T IA S + .2µF .DS D.T. VGS 3mA 1. Temperature 6 www.0 ID = 250µA Fig 13a. 2. Gate Charge Test Circuit Fig 14.0 + V . Threshold Voltage Vs.5 Charge 3.U. Maximum Avalanche Energy Vs. Junction Temperature ( °C) IAS Fig 12b.0 3.irf.U. Single Pulse Avalanche Energy (mJ) 1000 VDS L D R IV E R ID 41A 71A BOTTOM 101A TOP 800 RG 20V tp D . Unclamped Inductive Test Circuit V (B R )D SS tp 400 200 0 25 50 75 100 125 150 175 Starting TJ .5 50KΩ 12V . Temperature ( °C ) IG ID Current Sampling Resistors Fig 13b.

3 factor accounts for voltage increase during avalanche).com) 1. 6. Avalanche Energy (mJ) 500 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 101A 400 300 200 100 0 25 50 75 100 125 150 Starting T J . ∆T = Allowable rise in junction temperature.IRF1405 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.0E-03 1. BV = Rated breakdown voltage (1. Iav = Allowable avalanche current. This is validated for every part type. see figure 11) PD (ave) = 1/2 ( 1.0E-05 1. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. Maximum Avalanche Energy Vs. tav assuming ∆ Tj = 25°C due to avalanche losses 0.com 7 .0E-08 1.irf. Temperature www.0E-04 1. 5. Typical Avalanche Current Vs. 16: (For further info. tav ) = Transient thermal resistance. PD (ave) = Average power dissipation per single avalanche pulse.0E-01 tav (sec) Fig 15. Equation below based on circuit and waveforms shown in Figures 12a. 12b.0E-06 1.Pulsewidth 600 EAR . 7. 16). 3. Junction Temperature (°C) Notes on Repetitive Avalanche Curves . Figures 15. see AN-1005 at www.0E-07 1. not to exceed Tjmax (assumed as 25°C in Figure 15.05 0. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. 4.3·BV·Iav) = ∆T/ ZthJC Iav = 2∆T/ [1. tav = Average time in avalanche. 2.0E-02 1.01 Allowed avalanche Current vs avalanche pulsewidth.3·BV·Zth] EAS (AR) = PD (ave)·t av Fig 16.10 10 1 1.irf. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D.

U.0V for Logic Level and 3V Drive Devices Fig 17. For N-channel HEXFET® power MOSFETs 8 www. Period D= P. .T.T.com . Period [VGS=10V ] *** D.T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.irf.U.T for P-Channel Driver Gate Drive P.U.W.W. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ] *** VGS = 5.Device Under Test + VDD * Reverse Polarity of D.U.U.IRF1405 Peak Diode Recovery dv/dt Test Circuit D. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.T.

1 85 ) 4 .87 (.2 0 (.47 (.55 5) 1 3.10 3) 10 .2 40 ) -B4 .55 (.09 (.5 5 (.64 (. 1 982 .10 4) 3 O U TL IN E C O N F O R MS TO J E D E C O U T L IN E TO -2 20 A B .irf.0 4 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 .05 2) 1.46 (.irf.5 M . USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.54 (. This product has been designed and qualified for the Automotive [Q101] market. El Segundo.13 9 ) -A 6 .2 9 (.0 37 ) 0 .02 2) 0.com for sales contact information.32 (.62 (.0 27 ) M B A M 3X 0.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14 .4 7 (.0 45 ) 0 .6 9 (.140 ) 3X 3X 1 .415 ) 10 . Qualification Standards can be found on IR’s Web site.0 55 ) 1 .92 (. IR WORLD HEADQUARTERS: 233 Kansas St.6 9 (.84 (.53 0) 4 . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE PART NU MBER IR F 10 1 0 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK Data and specifications subject to change without notice.IRF1405 Package Outline TO-220AB Dimensions are shown in millimeters (inches) 2.160 ) 3 .58 4) 1 .5 4 (.36 (.5 4 ( . 3/01 www. California 90245.GATE 2 ..D R A IN 3 .7 8 ( .0 6 (.1 5 (.405 ) 3.60 0) 1 4.11 5) 2.1 0 (.14 9 ) 3. 2 C O N TR O L LIN G D IM E N S IO N : INC H 2.01 8) 0.11 3) 2.04 8) 4 1 5.4 0 (.2 55 ) 6 .9 3 (.S O U RC E 4 .22 (.D R A IN 1 4.1 5 (.com 9 .0 14 ) 2.1 65 ) 1. 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .24 (.