General Purpose and Switching Applications
• DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.)


TO-220 2.Collector 3.Emitter


NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector -Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 70 60 5 10 6 75 0.6 150 - 55 ~ 150 Units V V V A A W W °C °C

Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO ICEO ICEX1 ICEX2 IEBO hFE VCE(sat) VBE (on) fT Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Test Condition IC = 200mA, IB = 0 VCE = 30V, IB = 0 VCE = 70V, VBE(off) = -1.5V VCE = 70V, VBE(off) = -1.5V @ TC = 150°C VEB = 5V, IC = 0 VCE = 4V, IC = 4A VCE = 4V, IC = 10A IC = 4A, IB = 0.4A IC = 10A, IB = 3.3A VCE = 4V, IC = 4A VCE = 10V, IC = 500mA 2 20 5 Min. 60 Max. 700 1 5 5 100 1.1 8 1.8 V V V MHz Units V µA mA mA mA

Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter On Voltage Current Gain Bandwidth Product

* Pulse test: PW≤300µs, duty cycle≤2% Pulse

©2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001

SATURATION VOLTAGE 1000 10 VCE = 2V IC = 10I B hFE.01 0.1 1 10 100 0 0 25 50 o 75 100 125 150 175 VCE[V]. DC current Gain Figure 2. COLLECTOR-EMITTER VOLTAGE Tc[ C].1 VCE (sat) 1 0. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 105 90 IC[A]. Safe Operating Area Figure 4.1 1 10 100 IC[A].01 0. VCE(sat)[V]. COLLECTOR CURRENT Figure 1.MJE3055T Typical Characteristics VBE(sat). A1. COLLECTOR CURRENT PC[W]. February 2001 . CASE TEMPERATURE Figure 3.1 1 10 0. COLLECTOR CURRENT IC[A]. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. POWER DISSIPATION 75 10 100 DC 5 ms 1 ms 60 0µ s 45 1 30 15 0. DC CURRENT GAIN 100 1 V BE(sat) 10 0.

70) ø3.95MAX.20 (1.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev.54TYP [2.70) 1.20 10.00) 15.10 2.00 ±0.50 –0.54 ±0. A1.30 18.10 0.10 (1.54TYP [2.10 2.54 ±0.20 1.52 ±0.20] 10.46) 13.50 ±0.90 ±0.05 +0.MJE3055T Package Demensions TO-220 9.10 2.90 ±0.20 ±0.30 ±0.10 9.08 ±0.20 (8.60 ±0.27 ±0.80 ±0.70) (45° ) 0.80 ±0.40 ±0.00) (3. February 2001 .20 (1.20] 2.10 1.08 ±0.10 4.30 –0.20 1. (3.05 +0.

Life support devices or systems are devices or systems which. NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS. As used herein: 1. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. can be reasonably expected to result in significant injury to the user. G . Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ LILENT SWITCHER® SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ VCX™ UHC™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. This datasheet contains final specifications.TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FUNCTION OR DESIGN. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system. and supplementary data will be published at a later date. or (b) support or sustain life. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. or to affect its safety or effectiveness. 2. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. (a) are intended for surgical implant into the body. NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. Specifications may change in any manner without notice. This datasheet contains preliminary data.

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