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BF1009S...

Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stage up to 1 GHz Operating voltage 9 V Integrated biasing network Pb-free (RoHS compliant) package 1) Qualified according AEC Q101

Drain AGC RF Input G2 G1

RF Output + DC

GND

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type BF1009S BF1009SR

Package SOT143 SOT143R 1=S 1=D 2=D 2=S

Pin Configuration 3=G2 3=G1 4=G1 4=G2 -

Marking JLs JLs

Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS 76 C, BF1009S, BF1009SR Storage temperature Channel temperature
1Pb-containing

Symbol VDS ID IG1/2SM +VG1SE Ptot Tstg Tch

Value 12 25 10 3 200 -55 ... 150 150

Unit V mA V mW C

package may be available upon special request

Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.


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BF1009S...
Thermal Resistance Parameter Channel - soldering point 1) BF1009S, BF1009SR Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Drain-source breakdown voltage
ID = 500 A, VG1S = 0 , VG2S = 0 V(BR)DS

Symbol
Rthchs

Value 370

Unit K/W

Symbol min. 12 9 9 10 -

Values typ. 13 0.9 max. 12 12 60 50 500 16 -

Unit

Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current
VG1S = 6 V, VG2S = 0

+V(BR)G1SS V (BR)G2SS +IG1SS IG2SS


IDSS IDSO VG2S(p)

A nA A mA V

Gate 2 source leakage current V G2S = 8 V, VG1S = 0 , V DS = 0 Drain current


VDS = 9 V, VG1S = 0 , VG2S = 6 V

Operating current (selfbiased)


VDS = 9 V, VG2S = 6 V

Gate2-source pinch-off voltage


VDS = 9 V, I D = 500 A
1For

calculation of R thJA please refer to Application Note Thermal Resistance

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BF1009S...
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics VDS = 9 V, V G2S = 6 V Gate1 input capacitance VDS = 9 V, V G2S = 6 V, f = 10 MHz Output capacitance VDS = 9 V, V G2S = 6 V, f = 10 MHz Power gain (self biased) VDS = 9 V, V G2S = 6 V, f = 800 MHz Noise figure VDS = 9 V, V G2S = 6 V, f = 800 MHz Gain control range VDS = 9 V, V G2S = 6 ... 0 V, f = 800 MHz G p 40 50 F 1.4 2.1 dB Gp 18 22 dB Cdss 0.9 Cg1ss 2.1 2.7 pF (verified by random sampling) gfs 26 30 mS Forward transconductance typ. max.

Unit

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BF1009S...
Total power dissipation Ptot = (TS) BF1009S, BF1009SR Drain current ID = (V G2S) VDS = 9 V
14 mA 12 180 11 160 10

220
mW

P tot

ID
90 105 120 C

140 120 100 80 60 40 20 0 0 15 30 45 60 75 150

9 8 7 6 5 4 3 2 1 0 0 1 2 3 4
V

TS

VG2S

Insertion power gain |S21| = (VG2S), f = 200 MHz


15
dB

Forward transfer admittance |Y21| = (VG2S), f = 200 MHz


32
mS

-5

24

lS21 l

-15

lY21 l
V

20

-25

16

-35

12

-45

-55

-65 0

0 0

VG2S

VG2S

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BF1009S...
Gate 1 input capacitance Cg1ss= (Vg2s) f = 200 MHz Output capacitance C dss = (VG2S) f = 200 MHz

3
pF pF

2.4

2.4 2.2

Cg1ss

2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4


V

Cdss

2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2

0 0

VG2S

VG2S

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Package SOT143

BF1009S...

Package Outline
0.15 MIN.

2.9 0.1 1.9


4 3

1 0.1 0.1 MAX.


1.3 0.1

2.4 0.15

10 MAX.

10 MAX.

0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B

0.08...0.1

0...8 0.2 M A

Foot Print
0.8 1.2 0.8
0.9

1.2 0.8

0.8

Marking Layout (Example)


Manufacturer

RF s
Pin 1

56

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel

0.9

1.1

2005, June Date code (YM)

BFP181 Type code

0.2

Pin 1

3.15

2.6 8

1.15

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Package SOT143R

BF1009S...

Package Outline
B
0.15 MIN.

2.9 0.1 1.9


4 3

1 0.1
0.1 MAX.

2.4 0.15

2 0.2
+0.1 0.8 -0.05

10 MAX.

0.08...0.15

0.4 +0.1 -0.05 1.7 0.25


M

0... 8
0.2
M

Foot Print
0.8 1.2 0.8

0.8

0.8

1.2

Marking Layout (Example)


Reverse bar

0.9

1.1

0.9

2005, June Date code (YM)

Pin 1

Manufacturer
BFP181R Type code

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel
4 0.2

Pin 1

3.15

2.6

1.15

10 MAX. 1.3 0.1

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BF1009S...
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Mnchen, Germany Infineon Technologies AG 2007. All Rights Reserved.

Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

2007-04-20