You are on page 1of 2

NPN SILICON POWER TRANSISTOR TIP41C

65 W at 25ºC Case Temperature 6A Continuous Collector Current 10A Peak Collector Current 100V Collector-Emitter Voltage Isolated transistor package available on request Custom selections possible

Absolute maximum ratings at 25ºC case temperature (unless otherwise noted)
RATING Collector-Base Voltage (Ie=0) SYMBOL VCBO VALUE 140 UNIT V

Collector-Emitter Voltage (Ib=0)

VCEO

100

V

Emitter-base voltage (reverse) Continuous collector current Peak collector current (max 300µs, duty cycle 2%) Continuous base current Continuous device dissipation at max 25ºC case temperature (see note 1) Continuous device dissipation at max 25ºC free air temperature (see note 2) Unclamped inductive load energy (see note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds

VEBO IC I CM IB P tot P tot ½LIC 2 Tj T stg TL

5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250

V A A A W W mJ ºC ºC ºC

NOTES
1. 2. 3. Derate linearly to 150ºC case temperature at t he rate of 0.52 W/ºC. This rating is not applicable to isolated packages. Derate linearly to 150ºC free air temperature at the rate of 16 mW/ºC This rating is based on the capability of the transistor to operate safely in a circuit of: L=20 mH, IB(on)=40mA, RBE = 270 ohm, VBE(off) = 0, RS = 0.1 ohm, I CC = 2.5A., duty max 1%.

DRIX SEMICONDUCTOR DATASHEET

3 1 MAX UNIT µs µs DRIX SEMICONDUCTOR DATASHEET . duty cycle <2% 5. Measured in pulse mode tp=300µs.03 0.NPN SILICON POWER TRANSISTOR TIP41C Electrical characteristics at 25ºC case temperature PARAMETER V(BR)CEO Collector-emitter ICES ICEO IEBO hFE VCE(sat) Vbe hfe TEST CONDITIONS I C = 30 mA IB = 0 VBE = 0 IB = 0 IC = 0 IC = 300mA IC = 3A IC = 6A IC = 6A IC = 500mA MIN (see note 4) 100 TYP 120 0.03 MAX 400 700 1 UNIT V µA µA mA breakdown voltage VCE = 140V Collecor-emitter cut-off current VCE = 100V Collector cut-off current VEB = 5V Emitter cut-off current VCE = 4V Forward current VCE = 4V transfer ratio Collector-emitter I B = 600mA saturation voltage Vce = 4V Base-emitter voltage Small signal forward VCE = 10V current transfer ratio (see notes 4 and 5) (see notes 4 and 5) (see notes 4 and 5) f = 1 kHz 30 15 100 60 1.92 62.2 1 1.5 2 V V 20 NOTES 4. To be measured using sense contacts for base and emitter. Thermal characteristics PARAMETER RèJC RèJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.5 UNIT ºC/W ºC/W Resistive-load-switching characteristics at 25ºC case temperature PARAMETER t on t off Turn-on time Turn-off time TEST CONDITIONS I C = 1A VBE(off) = -4 V IB(on) = 100mA RL = 20 ohm IB(off)= -100mA t P = 20 µs MIN TYP 0.