You are on page 1of 5

FDS9945

February 2001

FDS9945
60V N-Channel PowerTrench MOSFET
General Description
These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features
3.5 A, 60 V. RDS(ON) = 0.100 @ V GS = 10 V RDS(ON) = 0.200 @ V GS = 4.5V

Optimized for use in switching DC/DC converters with PWM controllers Very fast switching Low gate charge.

D2 D

D2 D

DD1 D1 D

5 6 7
Q1

4 3 2
Q2

SO-8
Pin 1 SO-8

G1 S1 G G2 S S2 S

Absolute Maximum Ratings


Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA=25oC unless otherwise noted

Parameter

Ratings
60 20
(Note 1a)

Units
V V A W

3.5 10 2 1.6 1.0 -55 to +175

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ , TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics
R JA R JA R J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)

78 (steady state), 50 (10 sec) 135 40

C/W C/W C/W

Package Marking and Ordering Information


Device Marking FDS9945 Device FDS9945 Reel Size 13 Tape width 12mm Quantity 2500 units

2001 Fairchild Semiconductor Corporation

FDS9945 Rev B(W)

FDS9945

Electrical Characteristics
Symbol
BV DSS BV DSS TJ IDSS IGSSF IGSSR

TA = 25C unless otherwise noted

Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)

Test Conditions
V GS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C V DS = 48 V, V GS = 20 V, V GS = 20 V V GS = 0 V V DS = 0 V V DS = 0 V

Min
60

Typ

Max Units
V

Off Characteristics
62.5 1 100 100 mV/C A nA nA

On Characteristics
V GS(th) V GS(th) TJ RDS(on)

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance

V DS = V GS , ID = 250 A ID = 250 A, Referenced to 25C V GS = 10 V, ID = 3.5 A V GS = 4.5V, ID = 2.5 A V GS = 10 V, ID =3.5A, TJ =125C V GS = 10 V, V DS = 5V, = V DS =30 V ID = 3.5 A

2.5 6 74 103 126

V mV/C

100 200 170

ID(on) gFS

10 8.6

A S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)

V DS = 30 V, f = 1.0 MHz

V GS = 0 V,

420 48 20

pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge

V DD = 30 V, V GS = 10 V,

ID = 1 A, RGEN = 6

7 4.3 19 3

14 8.6 34 6 13

ns ns ns ns nC nC nC

V DS = 30 V, V GS = 5 V

ID = 3.5 A,

8 4 2.5

DrainSource Diode Characteristics and Maximum Ratings


IS V SD
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward V GS = 0 V, IS = 2.1 A Voltage

2.1
(Note 2)

A V

0.8

1.2

a) 78/W when mounted on a 0.5in2 pad of 2 oz copper

b) 125/W when mounted on a 0.02 in2 pad of 2 oz copper

c) 135/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

FDS9945 Rev B(W)

FDS9945

Typical Characteristics

20

2.2 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE


V GS = 10V 6.0V 5.0V

2 VGS = 4.0V 1.8 1.6 4.5V 1.4 1.2 1 0.8 5.0V 6.0V 10V

I D, DRAIN CURRENT (A)

15

4.5V 10

4.0V 5

0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V)

12

15

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.


0.25 RDS(ON) , ON-RESISTANCE (OHM)

2 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100
o

ID = 3.5A VGS = 10V

ID = 1.75A 0.2 TA = 125 C 0.15


o

0.1 TA = 25 C 0.05 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)


o

125

150

TJ , JUNCTION TEMPERATURE ( C)

Figure 3. On-Resistance Variation withTemperature.


10 25 C 125 C
o

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.


10 IS , REVERSE DRAIN CURRENT (A)

VD S = 5V I D, DRAIN CURRENT (A) 8

T A = -55 C

VGS = 0V
o

1 TA = 125 C 0.1 25 C 0.01 -55 C 0.001


o o o

0 2 2.5 3 3.5 4 4.5 5 VGS , GATE TO SOURCE VOLTAGE (V)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS9945 Rev B(W)

FDS9945

Typical Characteristics

10 VGS, GATE-SOURCE VOLTAGE (V) ID = 3.5A 8 CAPACITANCE (pF) 40V 6 VD S = 20V 30V

600 500 CISS 400 300 200 COSS 100 C RSS 0 0 4 8 Q g, GATE CHARGE (nC) 12 16 0 5 10 15 20 25 30 VDS , DRAIN TO SOURCE VOLTAGE (V) f = 1MHz VGS = 0 V

Figure 7. Gate Charge Characteristics.


100 P(pk), PEAK TRANSIENT POWER (W) 50

Figure 8. Capacitance Characteristics.

100s ID, DRAIN CURRENT (A) 10 R DS(ON) LIMIT 1ms 10ms 1 VGS = 10V SINGLE PULSE o R JA = 135 C/W T A = 25 C 0.01 0.1
o

40

SINGLE PULSE R JA = 135C/W T A = 25C

30

100ms 1s DC 10s

20

0.1

10

10

100

0 0.001

0.01

0.1

10

100

VDS , DRAIN-SOURCE VOLTAGE (V)

t1 , TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1
D = 0.5 0.2

0.1

0.1 0.05

R JA (t) = r(t) + R JA R J A = 135 C/W

P(pk)
0.02 0.01

t1 t2

0.01
SINGLE PULSE

T J - T A = P * R J A(t) Duty Cycle, D = t1 / t 2

0.001 0.0001

0.001

0.01

0.1 t 1, TIME (sec)

10

100

1000

Figure 11. Transient Thermal Response Curve.


Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS9945 Rev B(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Bottomless CoolFET CROSSVOLT DOME E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST
DISCLAIMER

FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP

PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START SuperSOT-3 SuperSOT-6 SuperSOT-8

SyncFET TinyLogic UHC VCX

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. G