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Optocoupler, High Reliability, 5300 VRMS
• Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS • High Collector-Emitter Voltage, VCEO = 70 V • Low Saturation Voltage • Fast Switching Times • Low CTR Degradation • Temperature Stable • Low Coupling Capacitance • End-Stackable, .100 " (2.54 mm) Spacing • High Common-Mode Interference Immunity • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• UL1577, File No. E52744 System Code H or J, Double Protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 • CSA 93751
The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change.
Part SFH617A-1 SFH617A-2 SFH617A-3 Remarks CTR 40 - 80 %, DIP-4 CTR 63 - 125 %, DIP-4 CTR 100 - 200 %, DIP-4 CTR 160 - 320 %, DIP-4 CTR 40 - 80 %, DIP-4 400 mil (option 6) CTR 63 - 125 %, DIP-4 400 mil (option 6) CTR 63 - 125 %, SMD-4 (option 9) CTR 100 - 200 %, DIP-4 400 mil (option 6) CTR 100 - 200 %, SMD-4 (option 7) CTR 160 - 320 %, DIP-4 400 mil (option 6)
The SFH617A (DIP) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits.
SFH617A-4 SFH617A-1X006 SFH617A-2X006 SFH617A-2X009 SFH617A-3X006 SFH617A-3X007 SFH617A-4X006
For additional information on the available options refer to Option Information.
Document Number 83740 Rev. 1.4, 26-Oct-04
4.5 100 Unit V mA A mW Output Parameter Collector-emitter voltage Emitter-collector voltage Collector current t ≤ 1.vishay. Tamb = 100 °C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. part 2.55 to + 100 100 260 mm mm mm Ω Ω °C °C °C °C www. dip soldering distance to seating plane ≥ 1. 74 Creepage Clearance Insulation thickness between emitter and detector Comparative Tracking index per DIN IEC 112/VDEO 303.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 5300 Unit VRMS ≥ 7. unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device.0 60 2.SFH617A Vishay Semiconductors Absolute Maximum Ratings VISHAY Tamb = 25 °C.4 ≥ 175 ≥ 1012 ≥ 1011 . 10 s. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Nov. Input Parameter Reverse voltage DC Forward current Surge forward current Power dissipation t ≤ 10 µs Test condition Symbol VR IF IFSM Pdiss Value 6.0 ≥ 7. Tamb = 25 °C VIO = 500 V.0 50 100 150 Unit V V mA mA mW Coupler Parameter Isolation test voltage between emitter and detector. 1.com 2 Document Number 83740 Rev. refer to climate DIN 40046.0 ms Power dissipation Test condition Symbol VCE VEC IC IC Pdiss Value 70 7.0 ≥ 0. part 1 Isolation resistance VIO = 500 V. 26-Oct-04 .55 to + 150 . Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document.
com 3 .0 MHz Symbol VCEsat CC Min 0.25 0. unless otherwise specified Minimum and maximum values are testing requirements.01 13 750 Max 1.2 500 2.0 2.0 MHz Symbol VF IR CO Rthja Min Typ. 26-Oct-04 www. 5. f = 1. Permissible Power Dissipation vs.4. Typical values are characteristics of the device and are the result of engineering evaluation. 0. Ambient Temperature 200 P tot–Power Dissipation (mW) 150 Phototransistor 100 50 Diode 0 0 18483 25 50 75 100 125 150 Tamb – Ambient Temperature ( qC ) Electrical Characteristics Tamb = 25 °C.25 0.4 Typ. Input (IR GaAs) Parameter Forward voltage Reverse current Capacitance Thermal resistance Test condition IF = 60 mA VR = 6.0 MHz Part Symbol CCE Rthja ICEO ICEO ICEO ICEO Min Typ. Typical values are for information only and are not part of the testing requirements.4 Max Unit V pF Document Number 83740 Rev.0 V VR = 0 V.0 50 50 100 100 Max Unit pF K/W nA nA nA nA Coupler Parameter Collector-emitter saturation voltage Coupling capacitance Test condition IF = 10 mA.0 5. f = 1. 1.VISHAY SFH617A Vishay Semiconductors Figure 1. f = 1.vishay.0 5.65 10 Unit V µA pF K/W Output (Si Phototransistor) Parameter Collector-emitter capacitance Thermal resistance Collector-emitter leakage current VCE = 10 V SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 Test condition VCE = 5 V. 1.
RL = 75 Ω IF = 10 mA.SFH617A Vishay Semiconductors Current Transfer Ratio Parameter IC/IF Test condition IF = 10 mA. 3.0 4. VCE = 5.0 V. VCC = 5. 26-Oct-04 .0 V SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min 40 63 100 160 13 22 34 56 30 45 70 90 Typ.0 2.0 V. VCC = 5.0 mA Turn-off time IF = 20 mA IF = 10 mA IF = 5.0 3.0 V.0 V. Symbol ton tr toff tf fctr Min Typ. VISHAY Max 80 125 200 320 Unit % % % % % % % % Switching Characteristics Without Saturation Parameter Turn-on time Rise time Turn-off time Fall time Cut-off frequency With Saturation Parameter Turn-on time IF = 20 mA IF = 10 mA IF = 5.0 2.0 mA. VCC = 5. VCC = 5. VCC = 5.4.2 4. 1.vishay.0 2.6 18 23 23 25 11 14 14 15 Max Unit µs µs µs µs µs µs µs µs µs µs µs µs µs µs µs µs Test condition IF = 10 mA.0 4.0 V Part SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 IF = 1.0 3.0 250 Max Unit µs µs µs µs kHz www. VCE = 5.2 6. 3.0 mA Test condition Part SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 Symbol ton ton ton ton tr tr tr tr toff toff toff toff tf tf tf tf Min Typ.com 4 Document Number 83740 Rev.0 V. RL = 75 Ω IF = 10 mA.0 mA Fall time IF = 20 mA IF = 10 mA IF = 5. RL = 75 Ω IF = 10 mA. RL = 75 Ω IF = 10 mA.3 2.0 mA Rise time IF = 20 mA IF = 10 mA IF = 5.
Forward Current f = 1.0 V isfh610a_06 isfh610a_03 Figure 4.0 kΩ VCC = 5 V 47 Ω isfh610a_02 isfh610a_05 Figure 3. Temperature Figure 7.vishay.com 5 .4. Collector-Emitter Voltage VF = f (IF) IF 1. VCC = 5. Transistor Capacitance (typ.) vs. Switching Operation (with Saturation) Figure 6. 26-Oct-04 www. Current Transfer Ratio (CTR) vs.0 MHz IF = 10 mA. 1. Diode Forward Voltage vs. Linear Operation ( without Saturation) Figure 5. Output Characteristics (typ.VISHAY Typical Characteristics (Tamb = 25 °C unless otherwise specified) SFH617A Vishay Semiconductors IF RL = 75 Ω VCC = 5 V IC 47 Ω isfh610a_01 isfh610a_04 Figure 2.) Collector Current vs. Collector-Emitter Voltage Document Number 83740 Rev.
81) 4° typ. Pulse Width Figure 9.130 (3. 26-Oct-04 .012 (.4.045 (1.020 (. .30) i178027 .27) .030 (.150 (3. . . Permissible Pulse Handling Capability Forward Current vs.46) .35) .79) typ.130 (3.20) .56) 10° .54) 3°–9° .83) .268 (6.62) typ.508 ) .179 (4.035 (.79) .55) . Temperature Package Dimensions in Inches (mm) 2 1 pin one ID .190 (4.27) typ. .com 6 Document Number 83740 Rev.018 (.250 (6.89) .255 (6. 1.100 (2.230 (5.050 (1.vishay.110 (2.30) .031 (.022 (.14) . Permissible Power Dissipation vs.050 (1.48) . isfh610a_07 isfh610a_08 Figure 8.81) ISO Method A 3 4 .008 (.30) www.84) .300 (7.SFH617A Vishay Semiconductors VISHAY Ptot = f (TA) Pulse cycle D = parameter.76) .
.012 (.30) typ.040 (1.62) TYP .35) .249) .0) MIN.160 (4.25) .03) .8) .407 (10.028 (0.430 (10. .com 7 .4) .4.0040 (.92) .02) .36) .3) MAX.96) . Option 9 .315 (8.395 (10.1) . Option 7 . . 26-Oct-04 www.53) . 1.300 (7. 18450 Document Number 83740 Rev.51) .014 (0.406 (10. .300 (7.vishay.291 (7. 15° max.331 (8.391 (9.4) MIN.62) ref.VISHAY SFH617A Vishay Semiconductors Option 6 .102) .7) MIN.0098 (.6) .400 (10. .315 (8.00) min.307 (7.010 (0.180 (4.020 (.16) .375 (9.
Vishay Semiconductor GmbH. 3535. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. We reserve the right to make changes to improve technical design and may do so without further notice.com 8 Document Number 83740 Rev. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. injury or death associated with such unintended or unauthorized use. Fax number: 49 (0)7131 67 2423 www. arising out of. VISHAY 2. The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. B and C (transitional substances) respectively. damages.SFH617A Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Annex A. as well as their impact on the environment. Meet all present and future national and international statutory requirements. distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public. P. Council Decision 88/540/EEC and 91/690/EEC Annex A. D-74025 Heilbronn. Regularly and continuously improve the performance of our products. Parameters can vary in different applications. and expenses.O. 1. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3.vishay. 1. 26-Oct-04 . Germany Telephone: 49 (0)7131 67 2831. any claim of personal damage.B. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).4. costs. B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. processes. Various national and international initiatives are pressing for an earlier ban on these substances. the buyer shall indemnify Vishay Semiconductors against all claims. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application. directly or indirectly.
life-saving. The products shown herein are not designed for use in medical. express or implied. Except as provided in Vishay's terms and conditions of sale for such products. to any intellectual property rights is granted by this document. Vishay assumes no liability whatsoever. or infringement of any patent. or anyone on its behalf. relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose.com 1 . merchantability.vishay. or life-sustaining applications.. Information contained herein is intended to provide a product description only.Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. copyright. Inc. Document Number: 91000 Revision: 08-Apr-05 www. Vishay Intertechnology. assumes no responsibility or liability for any errors or inaccuracies. by estoppel or otherwise. No license. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. and disclaims any express or implied warranty. or other intellectual property right.
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