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VS-10BQ100-M3

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Vishay Semiconductors

Schottky Rectifier, 1 A
FEATURES
Low forward voltage drop
Cathode Anode

Guard ring for enhanced ruggedness and long term reliability Small foot print, surface mountable High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C

PRODUCT SUMMARY
Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS SMB 1A 100 V 0.59 V 1 mA at 125 C 175 C Single die 1.0 mJ

Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION
The VS-10BQ100-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS


SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 s sine 1.0 Apk, TJ = 125 C Range CHARACTERISTICS Rectangular waveform VALUES 1 100 780 0.59 - 55 to 175 UNITS A V A V C

VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-10BQ100-M3 100 UNITS V

ABSOLUTE MAXIMUM RATINGS


PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 C, IAS = 0.5 A, L = 8 mH Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical TEST CONDITIONS 50 % duty cycle at TL = 143 C, rectangular waveform 5 s sine or 3 s rect. pulse Following any rated load condition and with rated VRRM applied VALUES 1.0 780 A 38 1.0 0.5 mJ A UNITS A

Revision: 29-May-12

Document Number: 93227 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-10BQ100-M3
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Vishay Semiconductors

ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL 1A Maximum forward voltage drop See fig. 1 VFM (1) 2A 1A 2A Maximum reverse leakage current See fig. 2 Typical junction capacitance Typical series inductance Maximum voltage rate of charge Note (1) Pulse width = 300 s, duty cycle = 2 % IRM CT LS dV/dt TJ = 25 C TJ = 125 C TEST CONDITIONS TJ = 25 C TJ = 125 C VR = Rated VR VALUES 0.75 0.82 0.59 0.65 0.5 1 65 2.0 10 000 mA pF nH V/s V UNITS

VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 C Measured lead to lead 5 mm from package body Rated VR

THERMAL - MECHANICAL SPECIFICATIONS


PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to lead Maximum thermal resistance, junction to ambient Approximate weight Marking device Notes
(1)

SYMBOL TJ (1), TStg RthJL (2) RthJA DC operation

TEST CONDITIONS

VALUES - 55 to 175 36

UNITS C

C/W 80 0.10 0.003 Case style SMB (similar DO-214AA) 1J g oz.

dP tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB

(2)

Revision: 29-May-12

Document Number: 93227 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-10BQ100-M3
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Vishay Semiconductors
10 175 C

IF - Instantaneous Forward Current (A)

10

IR - Reverse Current (mA)

1 0.1 0.01 0.001

150 C 125 C 100 C 75 C 50 C 25 C

TJ = 175 C

1
TJ = 125 C TJ = 25 C

0.0001

0.1 0.2 0.4 0.6 0.8 1.0 1.2

0.00001 0 20 40 60 80 100

VFM - Forward Voltage Drop (V)


Fig. 1 - Maximum Forward Voltage Drop Characteristics

VR - Reverse Voltage (V)


Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage

100

CT - Junction Capacitance (pF)


10 0 20 40 60 80 100

VR - Reverse Voltage (V)


Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

1 00

Z thJC - Thermal Impedance (C/W)

10

D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20

PDM t1

1 Single pulse (thermal resistance) 0.1 0.00001 Notes: 1. Duty factor D = t1/ t2 2. Peak TJ = Pdm x ZthJC + Tc 0.0001 0.001 0.01 0.1 1 10

t2 . . 100

t1 - Rectangular Pulse Duration (s)


Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)

Revision: 29-May-12

Document Number: 93227 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-10BQ100-M3
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0.8 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20

Vishay Semiconductors

Allowable Case Temperature (C)

180

160 150 140 130 120 110 0.0

D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20

Average Power Loss (W)

170

0.6

DC

RMS limit

0.4 DC 0.2

Square wave (D = 0.50) 80 % rated VR applied see note (1)

0 0.3 0.6 0.9 1.2 1.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

IF(AV) - Average Forward Current (A)


Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature

IF(AV) - Average Forward Current (A)


Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current

IFSM - Non-Repetitive Surge Current (A)

1000

100

At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000

tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR

Revision: 29-May-12

Document Number: 93227 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-10BQ100-M3
www.vishay.com ORDERING INFORMATION TABLE
Device code

Vishay Semiconductors

VS1 1 2 3 4 5 6 -

10
2

B
3

Q
4

100
5

-M3
6

Vishay Semiconductors product Current rating B = SMB Q = Schottky Q series Voltage rating (100 = 100 V) Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free

ORDERING INFORMATION (Example)


PREFERRED P/N VS-10BQ100-M3/5BT PREFERRED PACKAGE CODE 5BT MINIMUM ORDER QUANTITY 3200 PACKAGING DESCRIPTION 13" diameter plastic tape and reel

LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95401 www.vishay.com/doc?95403 www.vishay.com/doc?95404

Revision: 29-May-12

Document Number: 93227 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Disclaimer
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Material Category Policy


Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

Document Number: 91000