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MUR1100E is a Preferred Device
SWITCHMODEt Power Rectifiers
Ultrafast “E” Series with High Reverse Energy Capability
These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes.
• 10 mjoules Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching • • • • • • •
Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175°C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 V These are Pb−Free Devices*
ULTRAFAST RECTIFIERS 1.0 AMPERES, 800−1000 VOLTS
• Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Lead Temperature for Soldering Purposes: • • •
Leads are Readily Solderable 260°C Max. for 10 Seconds Shipped in Plastic Bags; 1,000 per Bag Available Tape and Reel; 5,000 per Reel, by Adding a “RL’’ Suffix to the Part Number Polarity: Cathode Indicated by Polarity Band
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VRWM VR IF(AV) IFSM Value Unit V 800 1000 1.0 @ TA = 95°C 35 A A
PLASTIC AXIAL LEAD CASE 59
A MUR1x0E YYWW G G
Average Rectified Forward Current (Note 1) (Square Wave Mounting Method #3 Per Note 3) Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature Range
−65 to +175
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
A = Assembly Location MUR1x0E = Device Code x 8 or 10 Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
July, 2006 − Rev. 3
Publication Order Number: MUR180E/D
0 Amp. 1000 Units / Bag 5000 / Tape & Reel 1000 Units / Bag Shipping † http://onsemi. IREC = 0.0%. TJ = 25°C) Maximum Reverse Recovery Time (IF = 1. TJ = 25°C) Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage. *These packages are inherently Pb−Free. TJ = 150°C) (iF = 1.0 V) Controlled Avalanche Energy (See Test Circuit in Figure 6) 2. iR = 1.75 iR 600 10 trr 100 75 tfr WAVAL 75 10 ns mJ ns mA V ORDERING INFORMATION Device MUR180E MUR180EG MUR180ERL MUR180ERLG MUR1100E MUR1100EG MUR1100ERL MUR1100ERLG Package Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* 5000 / Tape & Reel Axial Lead* †For information on tape and reel specifications.25 Amp) Maximum Forward Recovery Time (IF = 1. di/dt = 50 Amp/ms) (IF = 0. TJ = 100°C) (Rated dc Voltage. vF 1. MUR1100E THERMAL CHARACTERISTICS Charateristics Maximum Thermal Resistance. Duty Cycle ≤ 2.0 Amp.0 Amp.50 1. Junction−to−Ambient Symbol RqJA Value See Note 3 Unit °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 Amp. including part orientation and tape sizes. Pulse Test: Pulse Width = 300 ms.0 Amp. di/dt = 100 Amp/ms. please refer to our Tape and Reel Packaging Specifications Brochure.com 2 . BRD8011/D. Recovery to 1.5 Amp.MUR180E.
Power Dissipation Figure 5.01 0.0 0 10 20 30 40 50 VR.07 0.1 2.1 0.0 0 0 0.9 1. IF(AV) .9 2.0 0.3 0.0 5.0 2.0 SQUARE WAVE 1. AVERAGE FORWARD CURRENT (AMPS) 3.5 1.7 0.0 TJ = 175°C 2. AVERAGE FORWARD CURRENT (AMPS) 5.0 1.0 (CAPACITIVE LOAD) PK + 20 I I 10 5.03 0. Typical Capacitance http://onsemi.com 3 . AVERAGE POWER DISSIPATION (WATTS) 5.0 4.0 0.3 0.3 1.0 100°C 1.0 2.5 2. INSTANTANEOUS FORWARD CURRENT (AMPS) 3.5 10 7.0 AV 3. MUR1100E ELECTRICAL CHARACTERISTICS 20 IR.0 20 TJ = 25°C C.7 0.MUR180E. REVERSE VOLTAGE (VOLTS) Figure 4.0 dc SQUARE WAVE 1.7 1.0 2. REVERSE CURRENT (m A) 1000 TJ = 175°C 100 10 7.5 0.0 IF(AV). AMBIENT TEMPERATURE (°C) Figure 3.1 0. CAPACITANCE (pF) 2.0 25°C 0.0 5. REVERSE VOLTAGE (VOLTS) TJ = 175°C 25°C Figure 2.3 vF.0 RATED VR RqJA = 50°C/W 3. INSTANTANEOUS VOLTAGE (VOLTS) 100 150 200 250 Figure 1.2 10 100°C 1.05 0.0 0 0 50 dc 0.5 1. Typical Forward Voltage TA.0 i F .02 4.01 0 100 200 300 400 500 600 700 800 900 1000 VR.5 0. Current Derating (Mounting Method #3 Per Note 3) PF(AV) . Typical Reverse Current* * The curves shown are typical for the highest voltage device in the grouping.1 1. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR.
MUR180E.5 AMPS/DIV. Although it is not recommended to design for this condition. By solving the loop equation at the point in time when S1 is opened. the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. and goes to zero at t2. it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed. due to di/dt effects. and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. TIME BASE: 20 ms/DIV.com 4 . It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device. EQUATION (2): 2 W [ 1 LI LPK AVAL 2 1 CH1 ACQUISITIONS SAVEREF SOURCE CH2 217:33 HRS STACK REF REF CHANNEL 1: VDUT 500 VOLTS/DIV. BV 2 DUT W [ 1 LI LPK AVAL 2 BV –V DUT DD ǒ Ǔ CH1 CH2 500V 50mV A 20ms 953 V VERT CHANNEL 2: IL 0. The oscilloscope picture in Figure 8. and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite EQUATION (1): component resistances. Test Circuit Figure 7. When S1 is closed at t0 the current in the inductor IL ramps up linearly. Current−Voltage Waveforms The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. MUR1100E +VDD IL 40 mH COIL VD MERCURY SWITCH ID ID VDD t0 t1 t2 t BVDUT DUT S1 IL Figure 6. shows the information obtained for the MUR8100E (similar die construction as the MUR1100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. Current−Voltage Waveforms http://onsemi. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly. when this induced voltage reaches the breakdown voltage of the diode. and energy is stored in the coil. Figure 8. Equation (2).
com 5 . junction−to−ambient (RqJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. MUR1100E NOTE 3 — AMBIENT MOUNTING DATA Data shown for thermal resistance.C. Board with 1−1/2 ″ X 1−1/2″ Copper Surface http://onsemi.MUR180E. L 1/4 1/2 65 72 80 87 50 Units °C/W °C/W °C/W MOUNTING METHOD 1 ÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉ MOUNTING METHOD 2 L L ÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉ L L Vector Pin Mounting ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ MOUNTING METHOD 3 L = 3/8 ″ Board Ground Plane P. TYPICAL VALUES FOR RqJA IN STILL AIR Mounting Method 1 2 RqJA 3 Lead 1/8 52 67 Length.
affiliates.70 0. ANODE SWITCHMODE is a trademark of Semiconductor Components Industries.00 2.com Order Literature: http://www.079 0. This literature is subject to all applicable copyright laws and is not for resale in any manner. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. subsidiaries. LLC. Denver.5M. and expenses. or other applications intended to support or sustain life.71 0. Box 5163. DIMENSIONING AND TOLERANCING PER ANSI Y14. including “Typicals” must be validated for each customer application by customer’s technical experts. CONTROLLING DIMENSION: INCH. SCILLC products are not designed.40 −−− K F D DIM A B D F K A POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F K STYLE 1: PIN 1.com 6 MUR180E/D .10 5. 3. 1982. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application. All operating parameters.27 25. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. and distributors harmless against all claims.161 0. including without limitation special. SCILLC does not convey any license under its patent rights nor the rights of others.onsemi. POLARITY DENOTED BY CATHODE BAND. costs. CATHODE (POLARITY BAND) 2.050 1. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.onsemi. Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www. LLC (SCILLC). consequential or incidental damages.205 0.com/orderlit For additional information.86 −−− 1. nor does SCILLC assume any liability arising out of the application or use of any product or circuit. or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. SCILLC makes no warranty.028 0.com N. ON Semiconductor and are registered trademarks of Semiconductor Components Industries. Buyer shall indemnify and hold SCILLC and its officers. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe. 2. or authorized for use as components in systems intended for surgical implant into the body.000 −−− MILLIMETERS MIN MAX 4. MUR1100E PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U B NOTES: 1.20 2. please contact your local Sales Representative http://onsemi. and specifically disclaims any and all liability. employees. damages. any claim of personal injury or death associated with such unintended or unauthorized use. intended. Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi. even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.106 0.034 −−− 0. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC is an Equal Opportunity/Affirmative Action Employer. representation or guarantee regarding the suitability of its products for any particular purpose.MUR180E. 5. INCHES MIN MAX 0. directly or indirectly. and reasonable attorney fees arising out of. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O.
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