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BT151-500R

SCR, 12 A, 15mA, 500 V, SOT78
Rev. 05 — 2 March 2009 Product data sheet

1. Product profile
1.1 General description
Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.

1.2 Features and benefits
„ High reliability „ High surge current capability „ High thermal cycling performance

1.3 Applications
„ Ignition circuits „ Motor control „ Protection Circuits „ Static switching

1.4 Quick reference data
Table 1. VDRM IT(AV) IT(RMS) Quick reference Conditions Min half sine wave; Tmb ≤ 109 °C; see Figure 3 half sine wave; Tmb ≤ 109 °C; see Figure 1; see Figure 2 VD = 12 V; Tj = 25 °C; IT = 100 mA; see Figure 8 Typ Max 500 7.5 12 Unit V A A repetitive peak off-state voltage average on-state current RMS on-state current Symbol Parameter

Static characteristics IGT gate trigger current 2 15 mA

Product data sheet Rev. All rights reserved. 500 V. 12 A. Pin 1 2 3 mb K A G mb Pinning information Symbol Description cathode anode gate anode mb A G sym037 Simplified outline Graphic symbol K 1 2 3 SOT78 (TO-220AB.NXP Semiconductors BT151-500R SCR. SC-46) 3. heatsink mounted. Ordering information Type number Package Name Description Version BT151-500R TO-220AB. SOT78 2. 05 — 2 March 2009 2 of 11 . 3-lead SOT78 SC-46 TO-220AB BT151-500R_5 © NXP B.V. 15mA. Ordering information Table 3. Pinning information Table 2. 1 mounting hole. 2009. plastic single-ended package.

Tj(init) = 25 °C. RMS on-state current as a function of surge duration. Tj(init) = 25 °C half sine wave. Product data sheet Rev.NXP Semiconductors BT151-500R SCR. tp = 8. 12 A. SOT78 4.5 5 Unit V V A A A/µs A W °C °C A A A2s W V In accordance with the Absolute Maximum Rating System (IEC 60134). see Figure 5 tp = 10 ms.3 ms. see Figure 1. Symbol VDRM VRRM IT(AV) IT(RMS) dIT/dt IGM PGM Tstg Tj ITSM Limiting values Parameter repetitive peak off-state voltage repetitive peak reverse voltage average on-state current RMS on-state current rate of rise of on-state current peak gate current peak gate power storage temperature junction temperature non-repetitive peak on-state current I2t for fusing average gate power peak reverse gate voltage half sine wave. IG = 50 mA. Tmb ≤ 109 °C. Limiting values Table 4. maximum values RMS on-state current as a function of mounting base temperature. I2t PG(AV) VRGM 25 IT(RMS) (A) 20 001aaa954 16 IT(RMS) (A) 12 001aaa999 15 8 10 4 5 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 Tmb (°C) 150 Fig 2. 2009.5 12 50 2 5 150 125 132 120 72 0. maximum values BT151-500R_5 © NXP B. Tmb ≤ 109 °C. All rights reserved. Fig 1. 15mA.V. dIG/dt = 50 mA/µs Conditions Min -40 Max 500 500 7. see Figure 3 half sine wave. see Figure 2 IT = 20 A. sine-wave pulse over any 20 ms period half sine wave. 500 V. 05 — 2 March 2009 3 of 11 . see Figure 4. tp = 10 ms.

8 003aab830 a = 1.NXP Semiconductors BT151-500R SCR. maximum values BT151-500R_5 © NXP B. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents.57 2.8 2. 05 — 2 March 2009 4 of 11 . All rights reserved.2 10 4 conduction angle (degrees) 30 60 90 120 180 0 0 2 4 6 form factor a 4 2. 12 A. 15mA. maximum values 001aaa956 ITSM (A) dlT/dt limit 102 IT ITSM t tp Tj initial = 25 °C max 10 10−5 10−4 10−3 tp (s) 10−2 Fig 4.9 2. 500 V.9 1. SOT78 15 Ptot (W) 1. 103 Total power dissipation as a function of average on-state current. Product data sheet Rev. 2009.57 5 α 8 IT(AV) (A) Fig 3.V.2 1.

SOT78 160 ITSM (A) 120 003aab829 80 IT ITSM 40 t tp Tj initial = 25 °C max 0 1 10 102 number of cycles 103 Fig 5. All rights reserved. 2009. 500 V.NXP Semiconductors BT151-500R SCR. 05 — 2 March 2009 5 of 11 . Thermal characteristics Table 5.3 Unit K/W thermal resistance from see Figure 6 junction to mounting base thermal resistance from junction to ambient free air Rth(j-a) - 60 - K/W 10 Zth(j-mb) (K/W) 001aaa962 1 10−1 P δ= tp T 10−2 tp T t 10−3 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 6. Product data sheet Rev. maximum values 5. Transient thermal impedance from junction to mounting base as a function of pulse width BT151-500R_5 © NXP B. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles. 15mA. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ Max 1. 12 A.V.

Tj = 125 °C. All rights reserved. see Figure 10 IT = 23 A. see Figure 8 VD = 12 V. VR = 25 V. Symbol IGT IL IH VT VGT Characteristics Parameter gate trigger current latching current holding current on-state voltage gate trigger voltage Conditions VD = 12 V. exponential waveform. Tj = 25 °C. 500 V. Tj = 25 °C. Normalized gate trigger current as a function of junction temperature Fig 7.5 0. Tj = 25 °C. Tj = 125 °C ID IR dVD/dt off-state current reverse current rate of rise of off-state voltage VD = 500 V. dIG/dt = 5 A/µs. Tj = 125 °C VDM = 335 V.NXP Semiconductors BT151-500R SCR.1 130 1000 2 70 Max 15 40 20 1. Tj = 125 °C. exponential waveform.75 1.25 50 200 Typ 2 10 7 1. Tj = 125 °C VR = 500 V. 12 A.V. 05 — 2 March 2009 6 of 11 . see Figure 11 IT = 100 mA. minimum values BT151-500R_5 © NXP B. see Figure 9 VD = 12 V. Critical rate of rise of off-state voltage as a function of junction temperature. VD = 500 V. IG = 100 mA. Characteristics Table 6. (dIT/dt)M = 30 A/µs. IT = 100 mA. Product data sheet Rev. gate open circuit VDM = 335 V.1 0. 15mA. VD = 500 V. RGK = 100 Ω Min 0. see Figure 12 IT = 100 mA. VD = 12 V.5 Unit mA mA mA V V V mA mA V/µs V/µs µs µs Static characteristics Dynamic characteristics 104 dVD/dt (V/μs) 103 (1) 001aaa949 3 IGT IGT(25°C) 2 001aaa952 (2) 102 1 10 0 50 100 Tj (°C) 150 0 −50 0 50 100 Tj (°C) 150 Fig 8. Tj = 25 °C. Tj = 25 °C.4 0. RGK = 100 Ω.4 0. see Figure 7 tgt tq gate-controlled turn-on time commutated turn-off time ITM = 40 A. Tj = 25 °C VDM = 335 V.5 0. 2009. Tj = 125 °C.6 0. ITM = 20 A. SOT78 6. dVD/dt = 50 V/µs.

V. 05 — 2 March 2009 7 of 11 . SOT78 3 IL IL(25°C) 2 001aaa951 3 IH IH(25°C) 2 001aaa950 1 1 0 −50 0 50 100 Tj (°C) 150 0 −50 0 50 100 Tj (°C) 150 Fig 9. Product data sheet Rev. 12 A.NXP Semiconductors BT151-500R SCR.2 001aaa953 IT (A) 20 (1) (2) (3) 10 0. All rights reserved.6 VGT VGT(25°C) 1. Normalized gate trigger voltage as a function of junction temperature Fig 11. 15mA. Normalized latching current as a function of junction temperature 30 001aaa959 Fig 10.5 1 1. On-state current as a function of on-state voltage BT151-500R_5 © NXP B.5 VT (V) 2 0.8 0 0 0. Normalized holding current as a function of junction temperature 1.4 −50 0 50 100 Tj (°C) 150 Fig 12. 500 V. 2009.

Lead shoulder designs may vary. Product data sheet Rev. 05 — 2 March 2009 8 of 11 . 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e e c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.2 Notes 1.7 0.8 L1(1) 3.0 p 3.4 D 16.0 b2(2) 1.0 2. Package outline Plastic single-ended package. heatsink mounted.0 12.6 2.NXP Semiconductors BT151-500R SCR.3 1. Package outline SOT78 (TO-220AB) BT151-500R_5 © NXP B. SOT78 7.8 3. Dimension includes excess dambar.V.25 b 0. 1 mounting hole. All rights reserved.6 5.5 q 3.7 4. 3.79 L2(1) max. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 13.54 L 15.6 1.1 A1 1.2 D1 6. 15mA.6 b1(2) 1. 500 V.40 1.0 15.3 9. 2.9 0.0 c 0.7 e 2.7 Q 2. 12 A. 2009.9 E 10.30 2.

Revision history Table 7. 2009. Product data sheet Rev. 15mA. 12 A. 500 V. Revision history Release date 20090302 Data sheet status Product data sheet Change notice Supersedes BT151_SER_L_R_4 Document ID BT151-500R_5 Modifications: BT151_SER_L_R_4 BT151_SERIES_3 (9397 750 13159) BT151_SERIES_2 BT151_SERIES_1 • • Package outline updated. All rights reserved. 05 — 2 March 2009 9 of 11 .NXP Semiconductors BT151-500R SCR. Product data sheet Product specification Product specification Product specification BT151_SERIES_3 BT151_SERIES_2 BT151_SERIES_1 - 20061023 20040607 19990601 19970901 BT151-500R_5 © NXP B. SOT78 8. Type number BT151-500R separated from data sheet BT151_SER_L_R_4.V.

expressed or implied. damage. This document supersedes and replaces all information supplied prior to the publication hereof.nxp. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant. 9. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document. the full data sheet shall prevail. Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. Contact information For more information.V. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. In case of any inconsistency or conflict between information in this document and such terms and conditions. the latter will prevail.com For sales office addresses. please visit: http://www. product names. SOT78 9. patents or other industrial or intellectual property rights. All rights reserved.com/profile/terms. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. which may result in modifications or additions.3 Disclaimers General — Information in this document is believed to be accurate and reliable. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development.nxp. including without limitation specifications and product descriptions. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale. at any time and without notice. nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury. This document contains the product specification. including those pertaining to warranty. For detailed and full information see the relevant full data sheet. space or life support equipment. conveyance or implication of any license under any copyrights. This document contains data from the preliminary specification. intellectual property rights infringement and limitation of liability.4 Trademarks Notice: All referenced brands.nxp. military. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. death or severe property or environmental 9. 15mA. However. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. service names and trademarks are the property of their respective owners. 2009. Exposure to limiting values for extended periods may affect device reliability. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 05 — 2 March 2009 10 of 11 . 9. authorized or warranted to be suitable for use in medical. 500 V. which is available on request via the local NXP Semiconductors sales office. as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. The latest product status information is available on the Internet at URL http://www. and as such is not complete. exhaustive or legally binding.NXP Semiconductors BT151-500R SCR. unless explicitly otherwise agreed to in writing by NXP Semiconductors. aircraft. NXP Semiconductors does not give any representations or warranties. as published at http://www. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Product data sheet Rev. please send an email to: salesaddresses@nxp.2 Definitions Draft — The document is a draft version only.com BT151-500R_5 © NXP B. Legal information 9. 12 A.com. 10. The term 'short data sheet' is explained in section "Definitions". The content is still under internal review and subject to formal approval. Suitability for use — NXP Semiconductors products are not designed. In case of any inconsistency or conflict with the short data sheet.

. . . . . . .10 Trademarks. . . .10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .NXP Semiconductors BT151-500R SCR. . .1 9.1 Quick reference data . . .2 Limiting values. . . . . . . . . . . . . . . . . . . .nxp. . . .4 10 Product profile . . . . . . . . . . . . . . . . . . . . 15mA. . . . . . . . . . . . . . . . . . . . . . . . .8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . All rights reserved. . . . . . . . . . . . SOT78 11. . . Contents 1 1. . . . . . . . . . . . . . . . . . . . . . .3 9. . . . . . . . . . . . . . . . . . . . . . . . . please send an email to: salesaddresses@nxp. 12 A. .5 Characteristics . . . . . . . . . .V. . .10 Please be aware that important notices concerning this document and the product(s) described herein. .10 Data sheet status . . . . . . .9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Pinning information . .1 General description . . . . . . . . . . . .10 Contact information. . . . . .10 Definitions . . . . . . . . . . . . . . .6 Package outline . . . . . .2 9. 2009. . . . . . . .1 Applications . . . . . . . . . . . . .3 1.com Date of release: 2 March 2009 Document identifier: BT151-500R_5 . . . . . . .1 1. . . . . . . . . . . . . .com For sales office addresses. .2 1. . . . . . . . . . . . . . . . . .1 Features and benefits . . . . please visit: http://www. . . . . . . . . . . . . . have been included in section ‘Legal information’. . . . . . . . . . .2 Ordering information . . . . . . For more information. . . . . .3 Thermal characteristics . © NXP B. . . . . . . . .4 2 3 4 5 6 7 8 9 9. . . . . . . . . . . . . 500 V. . . . . . . .