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by MJE13002/D

SEMICONDUCTOR TECHNICAL DATA 

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5 Amp.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high–voltage.4 11. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v CASE 77–08 TO–225AA TYPE MAXIMUM RATINGS Rating Symbol MJE13002 MJE13003 Unit VCEO(sus) 300 400 Vdc Collector–Emitter Voltage VCEV 600 700 Vdc Emitter Base Voltage VEBO 9 Vdc Collector Current — Continuous — Peak (1) IC ICM 1. SPECIFICATION FEATURES: • Reverse Biased SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 0.5 Adc Total Power Dissipation @ TA = 25_C Derate above 25_C PD 1.25 4. Duty Cycle 10%. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. Junction to Case RθJC 3. 25 and 100_C .5 Adc Emitter Current — Continuous — Peak (1) IE IEM 2. Motor Controls. . They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators.5 to 1.12 _C/W Thermal Resistance. • 700 V Blocking Capability • SOA and Switching Applications Information.75 1.5 3 Adc Base Current — Continuous — Peak (1) IB IBM 0. Inverters. high–speed power switching inductive circuits where fall time is critical. . Solenoid/Relay drivers and Deflection circuits. Preferred devices are Motorola recommended choices for future use and best overall value. Inc. Designer’s and SWITCHMODE are trademarks of Motorola. 1995 Motorola Bipolar Power Transistor Device Data 1 . tc @ 1 A.2 Watts mW/_C Total Power Dissipation @ TC = 25_C Derate above 25_C PD 40 320 Watts mW/_C TJ. Tstg – 65 to + 150 _C Symbol Max Unit Thermal Resistance. 100_C is 290 ns (Typ).     !   *Motorola Preferred Device 1. Inc. REV 4  Motorola. Junction to Ambient RθJA 89 _C/W TL 275 _C Collector–Emitter Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Maximum Load Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms.

5 Adc. IB = 0.5 1 3 1 — — — — — — 1 1. VBE(off) = 1.75 µs tfi — 0. Figure 13) Storage Time Crossover Time (IC = 1 A. IB = 0) VCEO(sus) MJE13002 MJE13003 Collector Cutoff Current (VCEV = Rated Value.5 1 µs ts — 2 4 µs tf — 0. TC = 100_C) ICEV Emitter Cutoff Current (VEB = 9 Vdc. IB = 0.7 4 µs tc — 0. TC = 100_C) Fall Time (1) Pulse Test: PW = 300 µs.2 1. VBE(off) = 1. Motorola Bipolar Power Transistor Device Data .5 Vdc) (VCEV = Rated Value.4 0.25 Adc.25 Adc. IB = 0. IC = 1 A.7 µs tsv — 1. VCE = 10 Vdc. VCE = 2 Vdc) hFE — 8 5 — — 40 25 — — — — — — — — 0. IE = 0.5 Adc. Duty Cycle 1%) Fall Time Inductive Load. IB1 = 0. Duty Cycle 2 2%.ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ   ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max 300 400 — — — — — — — — 1 5 — — 1 Unit OFF CHARACTERISTICS (1) Collector–Emitter Sustaining Voltage (IC = 10 mA.1 fT 4 10 — MHz Cob — 21 — pF td — 0. IC = 0) IEBO Vdc mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with base reverse biased IS/b See Figure 11 RBSOA See Figure 12 ON CHARACTERISTICS (1) DC Current Gain (IC = 0. IB1 = IB2 = 0.5 Vdc.5 Adc.1 Adc) (IC = 1 Adc.1 MHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time (VCC = 125 Vdc. f = 0. IB = 0. VCE = 2 Vdc) (IC = 1 Adc. VBE(off) = 5 Vdc.29 0. tp = 25 µs.25 Adc) (IC = 1.2 A. IB = 0. f = 1 MHz) Output Capacitance (VCB = 10 Vdc.05 0.5 Adc.1 µs tr — 0. IB = 0.2 A.15 — µs Collector–Emitter Saturation Voltage (IC = 0. Vclamp = 300 Vdc. IB = 0. Clamped (Table 1.5 Adc) (IC = 1 Adc. TC = 100_C) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 100 mAdc.1 Adc) (IC = 1 Adc. TC = 100_C) VCE(sat) Base–Emitter Saturation Voltage (IC = 0.25 Adc) (IC = 1 Adc.

03 2 0.07 0.2 IB.1 0.02 0.03 0.4 0.VCE . Base–Emitter Voltage Figure 4. VOLTAGE (VOLTS) 1A 0.1 150°C 150°C 0.35 VBE(sat) @ IC/IB = 3 VBE(on) @ VCE = 2 V 1 0.07 0.05 0. BASE CURRENT (AMP) 1 2 0.7 1 2 IC.5 A REVERSE FORWARD 0 – 0.01 0.4 0 0. COLLECTOR CURRENT (AMP) Figure 3. DC Current Gain IC.5 Figure 2.6 1.2 0.6 10 7 5 0. COLLECTOR–EMITTER VOLTAGE (VOLTS)   80 60 hFE . COLLECTOR CURRENT ( µ A) 0. Capacitance 3 . REVERSE VOLTAGE (VOLTS) Figure 6.8 25°C 0.2 TJ = – 55°C 25°C 0.7 0.15 25°C 0. Collector–Emitter Saturation Region 104 500 VCE = 250 V 300 103 TJ = 25°C Cib C.1 0.002 0.5 A 0.02 0.5 0. COLLECTOR CURRENT (AMP) 1 2 2 TJ = 25°C 1.4 0.2 + 0.1 0.3 A 0. VOLTAGE (VOLTS) 1.02 0.1 IC.1 0. BASE–EMITTER VOLTAGE (VOLTS) Figure 5.6 0.8 Figure 1.4 VBE.03 0.5 0. DC CURRENT GAIN TJ = 150°C 40 30 25°C 20 – 55°C 10 8 VCE = 2 V VCE = 5 V 6 4 0. Collector Saturation Region 1. CAPACITANCE (pF) 200 TJ = 150°C 102 125°C 100°C 101 75°C 50°C 100 70 50 30 20 100 25°C 10–1 – 0.05 0.2 0.1 A 1.5 2 5 10 20 50 100 200 500 1000 1 VR. Collector Cutoff Region Motorola Bipolar Power Transistor Device Data + 0.05 0.05 0.4 V.25 IC/IB = 3 TJ = – 55°C 0.005 0.2 IC = 0.2 Cob 0.2 + 0.05 0.3 0.3 0.2 0.7 1 0 0.07 0.5 0.02 0. COLLECTOR CURRENT (AMP) IC.3 V.3 0.2 0.

05 0.08 0.40 0.5 25 100 1. Typical Inductive Switching Performance ICPK IC 0 Test Equipment Scope–Tektronics 475 or Equivalent t2 TIME VCE IB 25 µs +10.0% RB and RC adjusted for desired IB and IC Vclamp 90% Vclamp tsv 90% IC trv tc 10% Vclamp 90% IB1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Table 2.36 1 25 100 1.28 NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1 TIME Figure 7. tf < 10 ns Duty Cycle = 1.07 0.001 µF L 5V 2N2222 PW DUTY CYCLE ≤ 10% tr.T.23 0.10 0.7 0.1 k IB TUT SCOPE RB *SELECTED FOR ≥ 1 kV D1 VCE 51 1k 1N4933 T.16 0.30 0.26 0.22 0.0 V 2N2905 270 MJE200 CIRCUIT VALUES 0.26 0. Inductive Switching Measurements 4 Motorola Bipolar Power Transistor Device Data .08 0.13 0. – 4.10 0.30 0.U.3 1.16 0.5 V Lcoil (ICpk) Vclamp tr.05 0.  Table 1. RB = 47 Ω VCC = 20 V Vclamp = 300 Vdc OUTPUT WAVEFORMS TEST WAVEFORMS t1 Adjusted to Obtain IC IC(pk) t t1 VCE Lcoil (ICpk) t1 ≈ VCC tf VCE or Vclamp t2 ≈ t – 8.3 V tf CLAMPED IC tfi tti 10% ICPK 2% IC IC AMP TC _C tsv µs trv µs tfi µs tti µs tc µs 0.06 0.30 0. Test Conditions for Dynamic Performance RESISTIVE SWITCHING REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +5 V VCC 33 1N4933 +125 V MJE210 TEST CIRCUITS 0.6 0.5 25 100 1.29 1.35 0.02 µF NOTE PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1 47 100 1/2 W Coil Data: Ferroxcube Core #6656 Full Bobbin (~200 Turns) #20 – VBE(off) GAP for 30 mH/2 A Lcoil = 50 mH VCC = 125 V RC = 125 Ω D1 = 1N5820 or Equiv.8 3 0.14 0.5 1. tf ≤ 10 ns MR826* RC 33 1N4933 Vclamp IC RB 1k 68 1k +5 V 5.

07 0. TIME OR PULSE WIDTH (ms) 50 P(pk) t1 t2 DUTY CYCLE.5 0. TIME ( µs) t.05 0. ] RESISTIVE SWITCHING PERFORMANCE 2 VCC = 125 V IC/IB = 5 TJ = 25°C 1 tr 2 0. However. However. separate measurements must be made on each waveform to determine the total switching time.07 0. 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms.3 0.01 0.02 0.5 0. 90% IB1 to 10% Vclamp trv = Voltage Rise Time. for designers of high frequency converter circuits. Turn–Off Time 0. However. 10 – 90% Vclamp tfi = Current Fall Time.7 0.03 r(t). For the designer. there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222: PSWT = 1/2 VCCIC(tc)f In general. 90 – 10% IC tti = Current Tail.2 0. rise.1 td @ VBE(off) = 5 V 1 0.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0. COLLECTOR CURRENT (AMP) Figure 8.5 1 2 3 5 10 20 t.03 0.01 0.02 0.05 0.07 0.03 0.05 0.3 0.05 tf 0. the following new terms have been defined.01 SINGLE PULSE 0.2 0.5 0.1 0. for inductive loads which are common to SWITCHMODE power supplies and hammer drivers.1 0.7 0.07 0.1 0.3 1 2 500 1000 0.  SWITCHING TIMES NOTE In resistive switching circuits. tsv = Voltage Storage Time. at lower test currents this relationship may not be valid. and storage times have been defined and apply to both current and voltage waveforms since they are in phase. Turn–On Time Figure 9. fall.1 0.7 IC.3 0. t rv + t fi t c.1 0.2 0.05 0.02 0. D = t1/t2 100 200 Figure 10. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) VCC = 125 V IC/IB = 5 TJ = 25°C ts 3 t.1 1 0. TIME ( µs) 0.2 0.5 D = 0.5 0.02 ZθJC(t) = r(t) RθJC RθJC = 3.7 0.2 0.2 0. Thermal Response Motorola Bipolar Power Transistor Device Data 5 .03 0.7 10 20 0. current and voltage waveforms are not in phase. COLLECTOR CURRENT (AMP) IC.05 0.02 0.03 0. As is common with most switching transistors.3 0.02 0. resistive switching is specified at 25_C and has become a benchmark for designers.2 0. 10 – 2% IC tc = Crossover Time. For this reason.3 0. Therefore. the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C.5 10 7 5 0.

4 5V 3V 0 0 100 200 300 1. Reverse Bias Safe Operating Area POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.02 0. the transistor must not be subjected to greater dissipation than the curves indicate. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C.2 0 20 40 60 80 100 120 140 160 TC. CASE TEMPERATURE (°C) Figure 13.8 MJE13003 MJE13002 0. COLLECTOR CURRENT (AMP) 10 5 2 100 µs 1 10 µs 5. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. 1. i. T J(pk) is variable depending on power level. load line shaping. SAFE OPERATING AREA INFORMATION FORWARD BIAS IC.  The Safe Operating Area figures shown in Figures 11 and 12 are specified ratings for these devices under the test conditions shown. RC snubbing.2 VBE(off) = 9 V TJ ≤ 100°C IB1 = 1 A 0. etc. T J(pk) may be calculated from the data in Figure 10.6 For inductive loads. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13.5 1.6 THERMAL DERATING 0. Figure 12 gives RBSOA characteristics.0 ms dc 0. COLLECTOR CURRENT (AMP) 1.e. COLLECTOR–EMITTER VOLTAGE (VOLTS) 500 Figure 11.05 0. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current conditions during reverse biased turn–off. REVERSE BIAS IC. in most cases.8 0.0 ms TC = 25°C 0. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. with the base to emitter junction reverse biased. COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS) Figure 12. This can be accomplished by several means such as active clamping. The data of Figure 11 is based on TC = 25_C.4 0. At high case temperatures.5 V 400 500 700 600 800 VCEV.1 0. high voltage and high current must be sustained simultaneously during turn–off.01 5 THERMAL LIMIT (SINGLE PULSE) BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO MJE13002 MJE13003 10 20 50 100 200 300 VCE. Forward Bias Power Derating 6 Motorola Bipolar Power Transistor Device Data . Second breakdown limitations do not derate the same as thermal limitations.2 0. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current..

305 0. 1982.15 1.66 0.025 0.148 0.025 0. 2.93 1.42 2.66 2.76 4.026 0.055 0. DIMENSIONING AND TOLERANCING PER ANSI Y14.88 3.050 0.020 0.41 0.63 14. CONTROLLING DIMENSION: INCH.145 0.04 7.5M.69 3.155 0.130 0.425 0. COLLECTOR 3. C M 1 2 3 H K J V G S R 0.39 BSC 1.095 0.74 2.575 0.30 2.64 0.115 0.01 1.105 0.61 16.158 0.035 0.094 BSC 0.  PACKAGE DIMENSIONS –B– U F Q –A– NOTES: 1. EMITTER CASE 77–08 TO–225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 7 .39 0.50 7.63 5 _ TYP 3.095 0.80 11.02 ––– STYLE 3: PIN 1.51 0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0. BASE 2.040 ––– MILLIMETERS MIN MAX 10.25 (0.27 2.045 0.435 0.93 3.655 5 _ TYP 0.295 0.010) A M M B M D 2 PL 0.25 (0.015 0.39 0.

Tai Po. Inc. 3–14–2 Tatsumi Koto–Ku.com – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H. subsidiaries. even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. damages.. P. How to reach us: USA / EUROPE: Motorola Literature Distribution. 8B Tai Ping Industrial Park. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application.K. Motorola makes no warranty. Motorola does not convey any license under its patent rights nor the rights of others. and distributors harmless against all claims. Motorola. Hong Kong. Motorola products are not designed. affiliates. 03–3521–8315 MFAX: RMFAX0@email. “Typical” parameters can and do vary in different applications. 852–26629298 8 ◊ Motorola Bipolar Power Transistor Device Data *MJE13002/D* MJE13002/D . 51 Ting Kok Road. is an Equal Opportunity/Affirmative Action Employer.  Motorola reserves the right to make changes without further notice to any products herein. and reasonable attorney fees arising out of. or authorized for use as components in systems intended for surgical implant into the body. intended. nor does Motorola assume any liability arising out of the application or use of any product or circuit. or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. and expenses. Buyer shall indemnify and hold Motorola and its officers. any claim of personal injury or death associated with such unintended or unauthorized use. including without limitation consequential or incidental damages.mot. N. costs. Motorola and are registered trademarks of Motorola.. or other applications intended to support or sustain life. Ltd. Tokyo 135. including “Typicals” must be validated for each customer application by customer’s technical experts.T.O. and specifically disclaims any and all liability. Phoenix. representation or guarantee regarding the suitability of its products for any particular purpose.. 1–800–441–2447 JAPAN: Nippon Motorola Ltd. Toshikatsu Otsuki.sps. Japan. Inc. Arizona 85036. directly or indirectly. employees. Tatsumi–SPD–JLDC. 6F Seibu–Butsuryu–Center. All operating parameters. Box 20912.

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