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P2N2222A Amplifier Transistors

NPN Silicon
Features

• These are Pb−Free Devices*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12 − 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C TO−92 CASE 29 STYLE 17

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COLLECTOR 1 2 BASE 3 EMITTER

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

3 STRAIGHT LEAD BULK PACK

12

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3 BENT LEAD TAPE & REEL AMMO PACK

2

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAM

P2N2 222A AYWW G G

A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)

ORDERING INFORMATION
Device P2N2222AG P2N2222ARL1G Package TO−92 (Pb−Free) TO−92 (Pb−Free) Shipping† 5000 Units/Bulk 2000/Tape & Ammo

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: P2N2222A/D

January, 2013 − Rev. 7

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VCE = 10 Vdc. TA = −55°C) (IC = 150 mAdc.0 − − − − − − IEBO ICEO IBEX nAdc nAdc nAdc 10 20 VCE(sat) Vdc VBE(sat) Vdc hre X 10− 4 hfe − hoe mMhos rb′Cc NF ps dB http://onsemi. VCE = 10 Vdc) (Note 1) Collector − Emitter Saturation Voltage (Note 1) (IC = 150 mAdc. f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc. 2.0 0. f = 1. f = 1. RS = 1.6 − − − − − 300 − − 0. IB = 50 mAdc) Base − Emitter Saturation Voltage (Note 1) (IC = 150 mAdc. VCE = 10 Vdc.0 − V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO 40 75 − − − 10 0. VCE = 10 Vdc. VCE = 20 Vdc. IE = 0.0 MHz) Input Impedance (IC = 1.0 Vdc) ON CHARACTERISTICS DC Current Gain (IC = 0. f = 1.0 kHz) (IC = 10 mAdc.5 Vdc. TA = 150°C) Emitter Cutoff Current (VEB = 3. VCE = 10 Vdc.01 10 10 Vdc Vdc Vdc nAdc mAdc Symbol Min Max Unit 6.0 kHz) (IC = 10 mAdc. f = 1.2 2.0 1.1 mAdc. IE = 0) (VCB = 60 Vdc.0 mAdc. f = 31. VCE = 10 Vdc) (IC = 10 mAdc. IB = 15 mAdc) (IC = 500 mAdc.com 2 .25 8.8 MHz) Noise Figure (IC = 100 mAdc.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc. VCE = 10 Vdc. VEB(off) = 3. Pulse Test: Pulse Width v 300 ms.0 Vdc.0 kHz) Output Admittance (IC = 1. IE = 0) Emitter − Base Breakdown Voltage (IE = 10 mAdc. VCE = 10 Vdc.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc. VCE = 10 Vdc) (IC = 10 mAdc. f = 1. IB = 15 mAdc) (IC = 500 mAdc.0%.P2N2222A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mAdc. VCE = 10 Vdc. f = 1.0 300 375 35 200 150 4. IC = 0. IC = 0) Collector Cutoff Current (VCE = 10 V) Base Cutoff Current (VCE = 60 Vdc.0 kHz) (IC = 10 mAdc.0 mAdc.0 1.0 mAdc.0 25 8. f = 100 MHz)C Output Capacitance (VCB = 10 Vdc.0 MHz) Input Capacitance (VEB = 0. IB = 50 mAdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (Note 2) (IC = 20 mAdc. VCE = 10 Vdc) (IC = 1. VCE = 1.0 kHz) Small−Signal Current Gain (IC = 1. f = 1.0 mAdc.0 kHz) 1.0 Vdc) (Note 1) (IC = 500 mAdc. VEB(off) = 3.25 − − 50 75 5.0 kW. f = 1. f = 1.0 25 − − − 8. Duty Cycle v 2. IB = 0) Collector − Base Breakdown Voltage (IC = 10 mAdc.0 MHz pF pF kW hFE 35 50 75 35 100 50 40 − − 0. IE = 0.0 4. f = 1. IC = 0) Collector Cutoff Current (VCE = 60 Vdc. VCB = 20 Vdc. fT Cobo Cibo hie 300 − − 2. VCE = 10 Vdc. VCE = 10 Vdc.3 1. VCE = 10 Vdc) (Note 1) (IC = 150 mAdc.0 kHz) (IC = 10 mAdc. VCE = 10 Vdc. fT is defined as the frequency at which |hfe| extrapolates to unity.

0 10 20 30 IC.0% 1 kW 200 +16 V 0 < 2 ns CS* < 10 pF -14 V < 20 ns 1k 1N914 - 4 V CS* < 10 pF 1. Turn−Off Time 1000 700 500 hFE. IC = 150 mAdc.0 Vdc.0% + 30 V 200 Scope rise time < 4 ns *Total shunt capacitance of test jig.0 5. Turn−On Time Figure 2. IB1 = 15 mAdc) (Figure 1) (VCC = 30 Vdc. COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1. IB1 = IB2 = 15 mAdc) (Figure 2) td tr ts tf − − − − 10 25 225 60 ns ns ns ns Symbol Min Max Unit SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V +16 V 0 - 2 V 1. and oscilloscope.0 2.0 V VCE = 10 V 0. DC CURRENT GAIN 300 200 TJ = 125°C 25°C 100 70 50 30 20 10 0. Figure 1. DC Current Gain http://onsemi.0 to 100 ms. DUTY CYCLE ≈ 2.7 1.0 k Figure 3.0 to 100 ms.0 3.1 -55°C VCE = 1.0 7. IC = 150 mAdc.com 3 . connectors.2 0.P2N2222A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc. VBE(off) = −2.5 0.3 0. DUTY CYCLE ≈ 2.

0 k 5.3 0.0 5.0 mA 10 mA 150 mA 500 mA 0.com 4 .1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t.0 4. RS = 200 W 100 mA. FREQUENCY (kHz) RS.02 0.2 0 0.0 NF.0 6.0 k 10 k 20 k 50 k 100 k f.0 5.0 NF. Collector Saturation Region 200 100 70 50 t.005 0.0 3. TIME (ns) 30 20 10 7. NOISE FIGURE (dB) IC = 50 mA 100 mA 500 mA 1. RS = 4. RS = 150 W 500 mA. NOISE FIGURE (dB) IC = 1.1 0.0 10 20 30 50 Figure 4.0 10 20 30 50 70 100 IC.0 2.0 5.0 2.0 2.0 kW RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1. SOURCE RESISTANCE (OHMS) Figure 7. BASE CURRENT (mA) 2.02 0.2 0.8 0.0 3.0 7.5 1. Turn − On Time Figure 6. TIME (ns) tf Figure 5. Frequency Effects Figure 8.0 5.0 TJ = 25°C 0.0 5.05 0.0 k 2.6 IC = 1.0 kW 50 mA.03 0. Turn − Off Time 10 8.5 1.0 7. COLLECTOR CURRENT (mA) 200 300 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.2 0.0 10 20 50 100 0 50 100 200 500 1.P2N2222A VCE .0 10 20 30 50 70 100 IC. COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 mA 6. COLLECTOR CURRENT (mA) 200 300 500 t′s = ts .0 kHz 8. Source Resistance Effects http://onsemi.01 0. RS = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 IB.0 2.01 0.05 0.4 0.1 0.0 4.0 mA.0 5.0 0 0.

CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.2 0.0 5.2 0.0 2.5 - 1.0 - 1.0 2.0 5. Current−Gain Bandwidth Product 1.0 10 20 30 IC.2 0 0.0 k 0.8 VBE(sat) @ IC/IB = 10 0.P2N2222A 30 20 CAPACITANCE (pF) Ceb 10 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T. COLLECTOR CURRENT (mA) 500 1.0 10 20 IC. “On” Voltages Figure 12.0 3.7 1.0 5. COLLECTOR CURRENT (mA) 50 70 100 Figure 9. VOLTAGE (VOLTS) +0.0 2.5 0 - 0.3 0.1 0.0 TJ = 25°C 0.0 7.5 1.0 0.5 - 2.0 2.4 1. Temperature Coefficients http://onsemi.5 0.1 0. Capacitances Figure 10.0 5.0 7.0 Ccb 3.1 0.com 5 .0 V COEFFICIENT (mV/ °C) V.0 5. COLLECTOR CURRENT (mA) 500 Figure 11.0 VCE(sat) @ IC/IB = 10 - 2.0 10 20 50 100 200 IC.6 VBE(on) @ VCE = 10 V 0.0 3.2 50 100 200 0.5 1.5 RqVB for VBE RqVC for VCE(sat) 0.0 2.

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