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TO -92

BT169H
SCR
Rev. 3 — 7 November 2011 Product data sheet

1. Product profile
1.1 General description
Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package.

1.2 Features and benefits
 High voltage capability  Planar passivated for voltage ruggedness and reliability  Sensitive gate

1.3 Applications
 Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI)  Ignition circuits  Low power latching circuits  Protection circuits / shut-down circuits: lighting ballasts  Protection circuits / shut-down circuits: Switched Mode Power Supplies

1.4 Quick reference data
Table 1. Symbol VDRM VRRM ITSM Quick reference data Parameter repetitive peak off-state voltage repetitive peak reverse voltage non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 8.3 ms half sine wave; Tj(init) = 25 °C; tp = 10 ms; see Figure 4; see Figure 5 IT(AV) IT(RMS) average on-state current RMS on-state current half sine wave; Tlead ≤ 83 °C; see Figure 3 half sine wave; Tlead ≤ 83 °C; see Figure 1; see Figure 2 VD = 12 V; IT = 10 mA; Tj = 25 °C; see Figure 7 Conditions Min Typ Max 800 800 10 9 Unit V V A A

-

-

0.5 0.8

A A

Static characteristics IGT gate trigger current 1 50 100 µA

Pin 1 2 3 Pinning information Symbol Description A G K anode gate cathode A G sym037 Simplified outline Graphic symbol K 321 SOT54 (TO-92) 3.V. Tlead ≤ 83 °C. Tj(init) = 25 °C. © NXP B.1 150 125 Unit V V A A A A A 2s A/µs A V W W °C °C In accordance with the Absolute Maximum Rating System (IEC 60134).8 10 9 0. Ordering information Package Name BT169H TO-92 Description plastic single-ended leaded (through hole) package. 3 — 7 November 2011 2 of 12 . Ordering information Table 3. Product data sheet Rev. sine-wave pulse IT = 2 A. see Figure 3 half sine wave. tp = 8. see Figure 4. see Figure 2 half sine wave. Tlead ≤ 83 °C. dIG/dt = 100 mA/µs Conditions Min -40 Max 800 800 0.41 50 1 5 2 0. see Figure 5 tp = 10 ms. 2011. IG = 10 mA. Pinning information Table 2.NXP Semiconductors BT169H SCR 2. see Figure 1. Tj(init) = 25 °C. tp = 10 ms. Symbol VDRM VRRM IT(AV) IT(RMS) ITSM Limiting values Parameter repetitive peak off-state voltage repetitive peak reverse voltage average on-state current RMS on-state current non-repetitive peak on-state current I2t for fusing rate of rise of on-state current peak gate current peak reverse gate voltage peak gate power average gate power storage temperature junction temperature over any 20 ms period half sine wave. I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj BT169H All information provided in this document is subject to legal disclaimers. Limiting values Table 4.5 0. 3 leads Version SOT54 Type number 4.3 ms half sine wave. All rights reserved.

8 2.9 101 conduction angle (degrees) 30 60 90 120 180 form factor a 4 2.5 001aab449 1 IT(RMS) (A) 0. All rights reserved.NXP Semiconductors BT169H SCR 2 IT(RMS) (A) 1.8 Fig 2. 2011.6 Fig 3.2 2.5 0.1 0.4 0.9 1. maximum values BT169H All information provided in this document is subject to legal disclaimers.6 1 0.3 0. © NXP B.2 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 150 Tlead (°C) Fig 1.6 2.4 4 a= 1.2 0.2 1.5 IT(AV) (A) 113 α 0. RMS on-state current as a function of lead temperature. Product data sheet Rev. RMS on-state current as a function of surge duration for sinusoidal currents 0.2 0 0 0.57 1.8 0. Total power dissipation as a function of average on-state current.57 0.V.4 125 0. 3 — 7 November 2011 3 of 12 .8 001aab450 (1) 0. maximum values 001aab446 77 Tlead(max) (°C) 89 Ptot (W) 0.

V. 3 — 7 November 2011 4 of 12 . maximum values BT169H All information provided in this document is subject to legal disclaimers. maximum values 003aac211 103 ITSM (A) 102 IT ITSM t tp Tj(init) = 25 °C max 10 1 10−5 10−4 10−3 tp (s) 10−2 Fig 5. © NXP B. All rights reserved. Non-repetitive peak on-state current as a function of pulse width. 2011.NXP Semiconductors BT169H SCR 10 ITSM (A) 8 003aac212 6 4 IT ITSM 2 t tp Tj(init) = 25 °C max 0 1 10 102 number of cycles 103 Fig 4. Product data sheet Rev. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles.

All rights reserved. 3 — 7 November 2011 5 of 12 . Symbol Rth(j-lead) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to lead thermal resistance from junction to ambient Conditions see Figure 6 printed circuit board mounted: lead length = 4 mm Min Typ 150 Max 60 Unit K/W K/W 102 Zth(j-lead) (K/W) 10 001aab451 1 P δ= tp T 10−1 tp T t 10−2 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 6. Thermal characteristics Table 5. © NXP B.V. Product data sheet Rev.NXP Semiconductors BT169H SCR 5. 2011. Transient thermal impedance from junction to lead as a function of pulse width BT169H All information provided in this document is subject to legal disclaimers.

BT169H All information provided in this document is subject to legal disclaimers. IT = 10 mA.V.NXP Semiconductors BT169H SCR 6. RGK = 1 kΩ Min 1 0. see Figure 7 VD = 12 V.5 0.5 1.25 0. Tj = 25 °C. RGK = 1 kΩ.7 0. Tj = 25 °C.05 0. RGK = 1 kΩ Tj = 125 °C. (dIT/dt)M = 30 A/µs.3 150 Typ 50 2 1. Tj = 125 °C. IT = 10 mA.8 0. Tj = 125 °C. IT = 10 mA. see Figure 8 VD = 12 V. Tj = 25 °C VDM = 402 V.1 0.2 A.5 0. RGK = 1 kΩ. All rights reserved. Tj = 25 °C.05 350 Max 100 6 3 1. Normalized gate trigger current as a function of junction temperature Fig 8. Tj = 125 °C. Tj = 25 °C.6 A. Normalized latching current as a function of junction temperature © NXP B. RGK = 1 kΩ. Product data sheet Rev. exponential waveform. VD = 800 V. VR = 35 V. dVD/dt = 2 V/µs. see Figure 10 VD = 12 V.5 mA. see Figure 12 ITM = 2 A. see Figure 11 ID IR dVD/dt off-state current reverse current rate of rise of off-state voltage VD = 800 V. see Figure 11 VD = 800 V. Symbol IGT IL IH VT VGT Characteristics Parameter gate trigger current latching current holding current on-state voltage gate trigger voltage Conditions VD = 12 V. ITM = 1. see Figure 9 IT = 1. VR = 800 V VDM = 536 V. Characteristics Table 6. 2011.1 Unit µA mA mA V V V mA mA V/µs Static characteristics Dynamic characteristics tgt tq gate-controlled turn-on time commutated turn-off time - 2 100 - µs µs 3 IGT IGT(25°C) 2 001aab502 3 IL IL(25°C) 2 001aab503 1 1 0 −50 0 50 100 Tj (°C) 150 0 −50 0 50 100 Tj (°C) 150 Fig 7. dIG/dt = 0. 3 — 7 November 2011 6 of 12 .1 A/µs. Tj = 125 °C. Tj = 25 °C. RGK = 1 kΩ. IG = 0. IG = 10 mA.

© NXP B.187 Ω (1) Tj = 125 °C. Rs = 0.4 −50 0 50 100 Tj (°C) 150 10 0 50 100 Tj (°C) 150 Fig 11.2 001aab501 Fig 10. maximum values (3) Tj = 25 °C. minimum values BT169H All information provided in this document is subject to legal disclaimers.NXP Semiconductors BT169H SCR 3 IH IH(25°C) 2 001aab504 5 IT (A) 4 001aab454 3 2 1 1 (1) (2) (3) 0 −50 0 50 100 Tj (°C) 150 0 0.4 1.8 102 (1) 0. On-state current as a function of on-state voltage 104 dVD/dt (V/μs) 103 003aag957 0.V.8 Vo = 1.2 2 VT (V) 2. 3 — 7 November 2011 7 of 12 . Normalized holding current as a function of junction temperature 1. typical values (2) Tj = 125 °C. Normalized gate trigger voltage as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature. maximum values Fig 9. 2011. All rights reserved.067 V.6 VGT VGT(25°C) 1. Product data sheet Rev.

7 L1(1) max.4 d 1.5 12.2 3. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. 3 leads SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.4 E 4. Package outline Plastic single-ended leaded (through hole) package.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm Note 1.66 0.40 b1 0. 2011. All rights reserved.6 e 2.NXP Semiconductors BT169H SCR 7.45 0.0 b 0.27 L 14. Product data sheet Rev. 3 — 7 November 2011 8 of 12 .54 e1 1. © NXP B.8 4. Package outline SOT54 (TO-92) BT169H All information provided in this document is subject to legal disclaimers. 2.55 c 0.2 5.V.48 0.7 1.5 Fig 13.38 D 4. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 JEITA SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 A 5.

NXP Semiconductors BT169H SCR 8.V. Revision history Release date 20111107 Data sheet status Product data sheet Product data sheet Change notice Supersedes BT169H v. 2011. © NXP B. 3 — 7 November 2011 9 of 12 . 20110526 BT169H All information provided in this document is subject to legal disclaimers.1 Document ID BT169H v.2 BT169H v. Product data sheet Rev. All rights reserved.3 Modifications: BT169H v.2 • Various changes to content. Revision history Table 7.

3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. NXP Semiconductors does not give any representations or warranties. nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury.NXP Semiconductors BT169H SCR 9. breach of contract or any other legal theory. shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer. Suitability for use — NXP Semiconductors products are not designed. costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence). special or consequential damages (including . costs or problem which is based on any weakness or default in the customer’s applications or products. However. 3 — 7 November 2011 10 of 12 . Draft — The document is a draft version only. the full data sheet shall prevail. at any time and without notice. unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Legal information 9. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products. Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). This document contains data from the preliminary specification. warranty. © NXP B. expressed or implied. NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. which may result in modifications or additions. and as such is not complete. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned. In no event shall NXP Semiconductors be liable for any indirect. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. damage. incidental. The latest product status information is available on the Internet at URL http://www. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document. exhaustive or legally binding. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. This document contains the product specification. Document status [1] [2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. 2011. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 9.lost profits. Product data sheet Rev. and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. BT169H All information provided in this document is subject to legal disclaimers. 9. Notwithstanding any damages that customer might incur for any reason whatsoever. as well as for the planned application and use of customer’s third party customer(s). or the application or use by customer’s third party customer(s). The term 'short data sheet' is explained in section "Definitions".2 Definitions Preview — The document is a preview version only. All rights reserved. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.without limitation . life-critical or safety-critical systems or equipment. This document supersedes and replaces all information supplied prior to the publication hereof.1 Data sheet status Product status [3] Development Qualification Production Definition This document contains data from the objective specification for product development. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. death or severe property or environmental damage. In case of any inconsistency or conflict with the short data sheet. business interruption. lost savings. including without limitation specifications and product descriptions. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document. which may result in modifications or additions. NXP Semiconductors does not accept any liability related to any default. authorized or warranted to be suitable for use in life support. In no event however. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. The content is still under internal review and subject to formal approval. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The document is still subject to formal approval.com. punitive. For detailed and full information see the relevant full data sheet.V. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. which is available on request via the local NXP Semiconductors sales office. as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.nxp. NXP does not accept any liability in this respect. Applications — Applications that are described herein for any of these products are for illustrative purposes only.

CoReUse. Bitport. Export might require a prior authorization from competent authorities. HiPerSmart. Export control — This document as well as the item(s) described herein may be subject to export control regulations. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant. please send an email to: salesaddresses@nxp. customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications.com For sales office addresses. STARplug. please visit: http://www. EZ-HV. FabKey. TriMedia and UCODE — are trademarks of NXP B. Bitsound. CoolFlux. Silicon Tuner.V. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified. 2011. SmartXA.NXP Semiconductors BT169H SCR In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 9. All rights reserved. as published at http://www. damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk.nxp. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. It is neither qualified nor tested in accordance with automotive testing or application requirements. 10. 3 — 7 November 2011 11 of 12 . Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale. © NXP B. conveyance or implication of any license under any copyrights. Product data sheet Rev. use and specifications. I-CODE. DESFire.com BT169H All information provided in this document is subject to legal disclaimers. service names and trademarks are the property of their respective owners. MoReUse.V. TOPFET. Adelante. unless otherwise agreed in a valid written individual agreement.nxp. Contact information For more information. QLPAK.4 Trademarks Notice: All referenced brands. and (c) customer fully indemnifies NXP Semiconductors for any liability. TrenchMOS. the product is not suitable for automotive use. MIFARE. HITAG. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. SiliconMAX. I²C-bus logo. patents or other industrial or intellectual property rights.com/profile/terms. MIFARE Plus. ITEC. Labelution. MIFARE Ultralight. GreenChip. ICODE. product names.

. . . . . . . © NXP B. . . . . . . . . . . . . . . . . .1 Features and benefits . . . .10 Data sheet status . . . . . . Contents 1 1.9 Legal information. . . . .2 Limiting values. . .1 Applications . . . For more information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1. . . . . . . .1 Quick reference data . . . . . . .1 1. . . . . . . . . . . . All rights reserved. .1 General description . . . . .4 2 3 4 5 6 7 8 9 9. .2 Ordering information . . . . . . . . . . . . . have been included in section ‘Legal information’. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Trademarks. . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein. . . .6 Package outline . . . .5 Characteristics . .2 1. .8 Revision history . . . . . . . . . . . . . . . . . . .com For sales office addresses. . . . .nxp. . . . . . . . . . . . . . .4 10 Product profile . . . .2 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . .3 9. . . . . . . . . . . . . . . . . . . . . .10 Disclaimers . . . . .NXP Semiconductors BT169H SCR 11. . . . . 11 Contact information. . . . . . please visit: http://www. . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . .10 Definitions . . . . . . . . . . . . . . . . . .com Date of release: 7 November 2011 Document identifier: BT169H . . . . . . . . . . . please send an email to: salesaddresses@nxp. . . . . . . . . . . . . . . . . . .1 9. .V. . . . . . . . . . . . . . . . . . . . . . . . . 2011. . . . . . . . . . . . . . . . .