ECE636 B2 Dynamics and Control of Voltage Source Converters (VSCs)

Winter 2013

Instructor: Dr. Yasser Mohamed Electrical and Computer Engineering Dept. University of Alberta Office W2-014 ECERF email: yasser2@ualberta.ca
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1. Electronic Power Processing

Outline
Overview of Electronic Power Processing Power Electronic Switches Classification of Power Converters Basic Configurations and Switching Strategies in VSCs 2

Overview of Electronic Power Processing

Power Electronic Switches

Power Electronics Switches

Uncontrollable Switch Diode On state is controlled; off state is controlled by the power circuit. Semi-controllable Switch Thyristor

Controlled Switches 1- Gate-Turn-Off Thyristor (GTO) 2- Integrated Gate-Commutated Thyristor (IGCT) 3- Insulated-Gate Bipolar Transistor (IGBT) 4- Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)

On/OFF states are controlled by the power circuit.

In ON state, the switch conducts current in one direction only (unidirectional switch). In OFF state, the switch blocks only positive voltages (unipolar) or both positive and negative voltages (bipolar), depending on the switch type.

Power Electronic Switches

Uncontrollable Switch : Diode 3 kV, 3 kA Fast recovery diode

Diode is a 2-terminal pn-junction device. Diode conducts when forward biased, i.e., when VAK>VF. VF1 to 4 V and is called forward voltage drop. When reverse biased, diode conducts a very small leakage current in reverse direction. If the reverse bias voltage exceeds reverse breakdown voltage, the device breaks down and conducts dangerously high reverse currents. This situation has to be avoided. On and OFF states of diode are controlled by the power circuit, not a control signal. That is why it is completely uncontrollable switch.

Power Electronic Switches

Semi-controllable Switch : Thyristor (Silicon Controlled Rectifier (SCR)) 4 kV, 3 kA

ON state of thyristor is controlled by a control signal, but its OFF state is controlled by the power circuit; thats why it is semi-controllable. When in OFF state, thyristor can block forward positive voltages (forward blocking voltage) below forward breakdown voltage and reverse voltages below reverse breakdown voltage. Thats why it is a bipolar unidirectional switch. Thyristor can be turned on by applying a positive gate current pulse when the device is f forward biased. To assume ON state, thyristor current must reach a certain level called latching current. To turn the thyristor off, its current has to brought below a certain level called holding current and a negative voltage has to be maintained across its terminals for longer than 6 a specified period of time.

Power Electronic Switches

Controllable Switch : Gate-Turn-Off Thyristor (GTO)

When forward biased, GTO can be turned on by injecting a positive current pulse of specified amplitude into the gate. When ON, the switch can be turned off by withdrawing a current pulse of specified magnitude from the gate. GTO is a Current Controlled Switch. A high negative gate current pulse of up to 1/3 of the anode current is required to turn off the GTO. This implies large power consumption in the gate drive circuit (high losses in the drive circuit). GTO is capable of withstanding reverse voltages (bipolar unidirectional switch). Typical GTO ratings are 6 kV, 6 kA, at switching frequency 500 Hz, and Von= 2-3 V. Very popular in 80s and 90s; now it is almost obsolete due to IGBT and IGCT!

Power Electronic Switches

Controllable Switch : Integrated Gate-Commutated Thyristor (IGCT)

IGCT is a newer semiconductor device (introduced in 1997) in the thyristor family that is replacing GTO in high power applications due to its superior characteristics. IGCT is a Voltage Controlled Switch. This implies very small power consumption in the gate drive circuit. IGCT has reverse voltage blocking capability (suitable for current-source inverters). IGCT is superior to GTO in that IGCT can operate without dv/dt snubbing at high current density, thanks to its improved switching characteristics. IGCT has low ON-state and turn-off losses as a result of minimized Silicon thickness. IGCT has low gate drive requirements especially during conduction. IGCT has low ON-state voltage drop. Typical IGCT ratings are 3 kA, 4.5kV, 500-2000 Hz, Von= 2.4 V, maximum turn-on di/dt= 3000 A/s, and maximum turn-off dv/dt= 4000 v/s.

Power Electronic Switches

Controllable Switch : Insulated-Gate Bipolar Transistor (IGBT)

When forward biased, IGBT can be turned on by applying a positive voltage of specified value between the gate and source or emitter. The gate voltage has to be maintained for as long as the switch is to be ON. When ON, the switch can be turned off by applying a negative voltage of specified value between the gate and source or emitter. The gate voltage has to be maintained for as long as the switch is to be OFF. Note that only at the turn-on and turn-off, a current pulse will be input to or withdrawn from the gate. The gate current during ON and OFF states is practically equal to zero. IGBT is a Voltage Controlled Switch. This implies very small power consumption in the gate drive circuit. IGBT combines the advantages of MOSFET (low power consumption at the gate), low ON-state voltage drop, and GTO (reverse voltage blocking capability). IGBTs reverse voltages blocking capability is lower than that of positive voltage blocking. New generation IGBTs called Non-Punch-Through (NPT IGBTs) are capable of blocking higher reverse voltages, but are slower in switching. IGBT ratings can reach 3300 V, 1200 A, and switching times as low as 1 s with switching frequency up to 2 kHz for high power applications (Silicon IGBT). 9

Power Electronic Switches

Controllable Switch : Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)

When forward biased, MOSFET can be turned on by applying a positive voltage of specified value between gate and source. The gate voltage has to be maintained for as long as the switch is to be ON. When ON, the switch can be turned off by applying a negative voltage of specified value between gate and source. The gate voltage has to be maintained for as long as the switch is to be OFF. MOSFET is a Voltage Controlled Switch. This implies very small power consumption in the gate drive circuit. MOSFET is NOT capable of withstanding reverse voltages (Unipolar unidirectional switch). MOSFET is a Positive Temperature Coefficient device. In other words, as the device temperature rises, its ON-state resistance Ron rises as well. Typical MOSFET ratings are from 100 A and small voltage to 1000 V and small current. Switching frequency of MOSFETs can reach as high as 1 MHz for small power ratings.

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Power Electronic Switches

Switching Losses in Controlled Switches

The figure shows a typical situation for a controllable switch in a power electronic converter. Vd is the dc source voltage and Io represents the inductive load current. When the switch in ON, the dc voltage source supplies power to the load through the switch. When the switch is OFF, the diode freewheels the load current, as the inductive load current cannot be interrupted. Note that the interruption of an inductive current can cause dangerously high Ldi/dt voltages, unless an alternate path for the flow of current is provided to avoid this situation.

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Power Electronic Switches

Switching Losses in Controlled Switches

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Power Electronic Switches

Switching Losses in Controlled Switches
The energy loss during turn-on and turn-off processes in the switch is The energy loss during the on-state is The switching power losses (averaged over one switching period Ts) will be
with fs increasing Ploss inc

The conduction power loss (averaged over one switching period) will be

where fs is switching frequency, Von is the onstate voltage of the switch, and d is switch duty ratio.

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Power Electronic Switches

Switching Losses in Controlled Switches

Switching waveforms of a Silicon Carbide (SiC) MOSFET (Cree) at 225C.

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Power Electronic Switches

Switching Losses in Controlled Switches
1.5 MW Full scale wind turbine

@ 3 kHz switching frequency, rated power

Several MOSFETs are used to meet the current rating of 1.5 MW wind turbine.

silicon carbid

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Power Electronic Switches

Switching Losses in Controlled Switches
1.5 MW Full scale wind turbine Several MOSFETs are used to meet the current rating of 1.5 MW wind turbine.

constant efficiency over wide temperature range

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Power Electronic Switches

Future trend
kW cm 2

SiC IGBT and IGCT will dominate medium and high power applications. Higher switching frequencies with low switching losses will be feasible. Higher switching frequencies will yield higher power quality, smaller filter size, lower cost, and more importantly higher dynamic capabilities. Many topologies proposed for high power converters under limited switching frequencies will be obsolete. VSCs will be commonly used even in high power applications.

700

225 15 kV SiC IGBT 125 15 kV SiC IGBT Si 1 5 10 kHz

400

150

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Power Electronic Switches

How to give a unidirectional switch a reverse conduction capability?

bidirectional diode

In ON state, the switch conducts current in (a) Generic schematic diagram of a switch cell. (b) one direction only (unidirectional switch). Symbolic representations
of a switch cell.

In OFF state, the switch blocks only positive voltages (unipolar) or both positive and If the switch is reverse biased by a few negative voltages (bipolar), depending on the volts, the diode conducts and provides a switch type. path for the reverse current. VSCs require switching cells to provide two-way power flow medium.

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Classification of Converters
A-

According to Commutation (the process of current transfer from outgoing switch (switch turned of) to incoming switch (switch turned on)
1-

line-commutated (or naturally-commutated converter): The commutation process depends on the AC voltage polarity

- 6-pulse line-commutated converter, widely used in conventional HVDC transmission 19 systems.

Classification of Converters
According to Commutation (the process of current transfer from outgoing switch (switch turned of) to incoming switch (switch turned on)
2-

Forced-commutated (or self-commutated converter) Gate-Turn Off Switches control the current transfer process

full-bridge, single-phase, two-level VSC

three-wire, three-phase, two-level VSC

three-phase current-source converter

note that CSC is single direction

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Classification of Converters
B-

According to DC-Source Characteristics

Three-phase current-source converter

Three-phase voltage-source converter

+
Vd _

Id

unidirectional converter bidirectional converter

Three-phase impedance-source (Z-source) converter

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Classification of Converters
According to DC-Source Characteristics
Three-phase voltage-source converter - AC voltage is less than dc voltage

Buck (step-down) dc/ac converter (buck inverter) Or Boost (step-up) ac/dc converter (boost rectifier)

+
Vd _

- Low number of passive components (low losses)

- Switching cells are used. IGBTs offer fast switching, low losses and high ratings. SiC IGBTs will remarkably extend the range power ratings and switching frequencies - DC-link voltage has fixed polarity. Film-type DC capacitors offer high density, smaller size, and higher reliability.

-AC voltage is pulsed. Reflecting waves can be yielded with long cables between the converter the load (e.g motor) Output voltage and load current in a 3-ph - Dominating in broad band of applications (up to 22 VSC HVDC light) with increasing capacity.

Classification of Converters
According to DC-Source Characteristics
- Three-phase VSC motor drive with long cable. Unmatched impedance causes high voltage reflected wave that can damage winding insulation. - Even in short cables, this can be a problem when the frequency of oscillation matches internal high frequency resonant modes in the motor. Pulse at the motor

One solution to this problem is use matching and damping filter (e.g. RLC filter)
the other solution for reflecting wave problem (resonance) is using CSC

Pulse at the inverter

Typical line-to-ground voltage oscillation in a PWM-based induction motor drive with 40m cable due to the reflected-wave phenomenon.

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Classification of Converters
According to DC-Source Characteristics - AC voltage is greater than dc voltage Three-phase current-source converter Buck (step-down) ac/dc converter (buck rectifier) Or Boost (step-up) dc/ac converter (boost inverter)
Id

- Bulky dc-inductor is usually needed (high losses)

- Switching cells cant be used. Switches should offer unidirectional current flow and bipolar voltage blocking. Although bipolar versions of the GTO and the IGCT are commercially available, they are limited in terms of switching speed and are mainly tailored for very high-power electronic converters. - DC-link current has fixed polarity.

- AC voltage is sinusoidal. This is a good feature for large motors with long cables (e.g. submerged ac motors).
- Less frequently used in the industry.

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Classification of Converters
According to Source Characteristics
Three-phase impedance-source (Z-source) converter -The impedance network at the input gives the converter a buck-boost nature in both rectifier and inverter modes. -Higher utilization of passive components increases the losses. -Not highly accepted in the industry due to higher losses

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Basic Configurations and Switching Strategies in VSCs

Basic Configurations Single Phase Half-bridge 2-level VSC Single Phase Full-bridge 2-level VSC 3-Phase Full-Bridge 2Level VSC Multi-module VSCs Multi-level VSCs Switching Strategies Sinusoidal Pulse-Width Modulated (PWM) Square-Wave VSCs Selective harmonic Elimination Voltage Cancellation (for single phase VSCs)

Space Vector Pulse Width Modulation (SVPWM)

Sinusoidal PWM with 3rd-Harmonic Injection

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References

- Mohan, Undeland and Robbins, Power Electronics: Converters, Applications, and Design, 3rd Edition, John Wiley & Sons, Inc., 2003.

-Yazdani and R. Iravani, Voltage-sourced converters in power systems, Modeling, Control, and Applications, John Willy, 2010.
- Hui Zhang, and Leon M. Tolbert, Efficiency impact of silicon carbide power electronics for modern wind turbine full scale frequency converter, IEEE Transactions on Industrial Electronics, vol. 58, no. 1, pp. 21-28, 2011. - F. Peng, Z-Source inverters, IEEE Transactions on Industrial Applications, vol. 39, no., 2, pp. 504 510, 2003.

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