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NanoTera.

chAnnualPlenaryMeeting,Bern,May30,2013

EnablingAutonomousSensorNodes: TunableCarbonNanotubeElectro MechanicalResonators(CabTuRes)


C.Hierold/C.Roman W.Andreoni,A.Magrez/L.Forr,O.Grning,A.Ionescu, M.Kayal,B.Nelson,D.Poulikakos,D.Briand/N.deRooij

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Overview

5mm

CabTuRes proposesaSiP solutiontointegrateCNTresonators(NEMS)withreadout electronics(CMOSIC)withinapackageadaptedtoapplication(capwafer) CabTuRes isaninterdisciplinaryengineeringresearchprojectatthecrossroadsbetween basicscienceandengineeringwithgreatinnovationpotential.

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Rationale:massbalance
Miniaturizationperseisnotthe motivationbutallthebenefitscoming withminiaturization.

Yes,itisminiatureanditrequiresultra lowpower toexcite/readoutananoresonator UnprecedentedmassresolutionincomparisontonanowiresandQCMs(~1cm size)inUHVandlowtemperaturedemonstratedinliterature

SNRandQforSWNTresonatorsatambientconditionsmustbeinvestigated

UnprecedentedmechanicaltuningrangeofSWNTs(yieldstrainupto 510%)allowsforaverylargemeasurementrangeinclosedloopoperation. Highsensitivityformassbalancebecauseoflowm andhigh0 Goal:ultralowpowerandsmallsize&weightisconditionalforautonomous sensorsystems

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Potentialapplications
Portablemicroanalytical systems Singlemoleculemassspectrometry
thefirstdemonstrationofmassspectrometrybasedonsingle biologicalmoleculedetectionwitha[NEMS][Naik etal,Nature Nano4,445(2009)]

achemicalsensortechnologybasedonresonant NEMSmassdetectorsthat[performed] chromatographicanalysisof13chemicals withina5stimewindow.[Lietal,NanoLett.10,3899 (2010)]

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TheCabTuResTeam
T6:System inPackage T3:MEMS withCNTs T2:SWNTfund. properties

T4:CNTmech. interfaces

T1:CNTgrowth &integration T5:CMOSIC &sys.model

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HighlightsofResearchAchievements

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CNTNEMSresonators

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NottheworstCNTresonatortechnology

Competition:ebeam litho, DCgatestraining


[Sazonova04]

CabTuRes:photolitho, MEMSactuatorstraining

[Peng06]

[Witkamp06]

[ShihWeiLee]

[Lassagne08]

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FeaturesofCNTNEMStechnology
ShihWeiLee

MatthiasMuoth

SilicononInsulator

Leeetal,to be submitted to Sens and Actuators A

Lowvoltage,largestroke (0.5m/V)thermalactuators

decoupledactuationRFsignalpaths

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SOIprocessflow

(a)

(d)

(b)

Leeetal,IEEE NEMS2011,p.37

(e)

(c)

(f)

Si

SiO2

Catalyst

Al2O3

Cr/Au
15

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FeaturesofCNTNEMStechnology
ShihWeiLee

MatthiasMuoth

smallgatehysteresis
Leeetal,to be submitted to Nanotechnology

stableelectricalcontacts

*measurementsdonotnecessarilycorrespondtothedisplayedCNFETSEM

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Resonatorresults
ShihWeiLee StuartTruax

DCtunable, CNTresonators

Leeetal,submitted to APL

*measurementsdonotnecessarilycorrespondtothedisplayedCNFETSEM

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AnotherpromisingCNTNEMSprocess
MatthiasMuoth

piezoresistive,ultraclean, suspendedCNFETs

Muothetal,MEMS2013,p.496

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SecondCNTNEMSprocess

highresonator density(106/cm2)

JiCao

Wladek Grabinski SebastianBartsch

preciseCNT alignment

hysteresis freeCNFETs

Caoetal,IEDM2012

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SecondCNTNEMSprocess
L=750 nm

CNTresonators @RT

JiCao

Wladek Grabinski SebastianBartsch

[Cao12]

DCtunable resonance

L=1 m

higherQ @77K

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CNTsynthesis,integrationandproperties

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Growingcarbonnanotubes

narrowdiameter distribution

MassimoSpina ArnaudMagrez

preciselylocatedCo catalystnanoparticles

highyield CNTgrowth

narrowdiameter distribution

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Growingcarbonnanotubes
MassimoSpina ArnaudMagrez

localizedCNTgrowth

T:1000C,Ethanol, laminarflowofAr (10ln/h)+H2 (20ln/h),10min

nanoparticledepositiononMEMS

flowalignedCNTgrowth

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Clampingandtribologyatcontacts
SimoneSchrle ManishK.Tiwari

inSEM manipulation

inTEM manipulation

LateralForce Microscopy

processformech.clampingstudies

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Clampingandtribologyatcontacts
SimoneSchrle ManishK.Tiwari

~85nmdefl. ~1.4%strain (L~1m)

~150nmdefl. ~4.4%strain

unclampedCNTs

CNTsclampedwEBIDPt

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ChemisorptiononCNTs
W.Andreoni O.Grning

Jaap Kroes FabioPietrucci

STM/STSofOonCNT

ab initioDFT

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Interfaceelectroniccircuits

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SystemTopology&Implementation

interface circuit topology

ChristianKauth

MarcPastre

frontend electronics
noise

gain

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SystemTopology&Implementation

interface circuit topology

ChristianKauth

MarcPastre

feedbackIC

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SystemTopology&Implementation

interface circuit topology

ChristianKauth

MarcPastre

actuator drive

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Systemassembly

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ThroughSiliconVias
Teru Akiyama DanickBriand RokhayaGueye

highTresistant Ta/Pt TSVs

ohmiccontacts

RFTSVs

systemintegrationconcept

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Capwaferandstudconnections
Teru Akiyama DanickBriand RokhayaGueye

encapsulation process

Eutecticbonding, T=415C,P=1100mbar, t=30min

CMOS NEMS assembly

systemintegrationconcept

StudbumpstechnologybyHybridS.A

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Additionalinformationandtechnicaldetails

Formoreinformationpleaseconsultanyofthe7CabTuResposters

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TheCabTuResteamthanksyou!

Grouppictureon14.10.2009atETHZurich
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