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SKM150GB12VG

Absolute Maximum Ratings Symbol


IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE 20 V VCES 1200 V Tj = 25 C Tj = 175 C Tc = 25 C Tc = 80 C 1200 222 169 150 450 -20 ... 20 Tj = 125 C 10 -40 ... 175 Tc = 25 C Tc = 80 C 187 140 150 IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C 450 774 -40 ... 175 Tterminal = 80 C AC sinus 50Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V s C A A A A A C A C V

Conditions

Values

Unit

SEMITRANS 3

VGES tpsc Tj IF IFnom

Inverse diode

SKM150GB12VG Features
V-IGBT = 6. Generation Trench V-IGBT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) UL recognized, file no. E63532 Increased power cycling capability With integrated gate resistor Low switching losses at high di/dt

Tj = 175 C

IFRM IFSM Tj Module It(RMS) Tstg Visol

Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c)

Typical Applications*
AC inverter drives UPS Electronic welders

Conditions
IC = 150 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V VCC = 600 V IC = 150 A VGE = 15 V RG on = 4 RG off = 4 di/dton = 6100 A/s di/dtoff = 1700 A/s du/dtoff = 7800 V/ s per IGBT Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 25 C Tj = 150 C f = 1 MHz f = 1 MHz f = 1 MHz Tj = 25 C Tj = 150 C

min.

typ.
1.85 2.25 0.94 0.88 6.07 9.13

max.
2.30 2.55 1.04 0.98 8.4 10.47 6.5 0.3

Unit
V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ

Remarks
Case temperature limited to Tc = 125C max, recomm. Top = -40 ... +150C, product rel. results valid for Tj = 150

5.5

6 0.1 9 0.89 0.884 1650 5.0 320 45 10 550 72 16.5

0.2

K/W

GB by SEMIKRON Rev. 4 23.03.2011 1

SKM150GB12VG
Characteristics Symbol Conditions
Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C rF Tj = 25 C Tj = 150 C IF = 150 A Tj = 150 C di/dtoff = 4000 A/s T = 150 C j VGE = 15 V T j = 150 C VCC = 600 V per diode

min.

typ.
2.17 2.11 1.3 0.9 5.8 8.1 170 22 11

max.
2.49 2.42 1.5 1.1 6.6 8.8

Unit
V V V V m m A C mJ

Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0

SEMITRANS 3

IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE'

0.31 15 20

K/W nH m m

SKM150GB12VG Features
V-IGBT = 6. Generation Trench V-IGBT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) UL recognized, file no. E63532 Increased power cycling capability With integrated gate resistor Low switching losses at high di/dt

terminal-chip per module to heat sink M6

TC = 25 C TC = 125 C 3 to terminals M6 2.5

0.25 0.5 0.02 0.038 5 5 325

Rth(c-s) Ms Mt w

K/W Nm Nm Nm g

Typical Applications*
AC inverter drives UPS Electronic welders

Remarks
Case temperature limited to Tc = 125C max, recomm. Top = -40 ... +150C, product rel. results valid for Tj = 150

GB 2 Rev. 4 23.03.2011 by SEMIKRON

SKM150GB12VG

Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'

Fig. 2: Rated current vs. temperature IC = f (TC)

Fig. 3: Typ. turn-on /-off energy = f (IC)

Fig. 4: Typ. turn-on /-off energy = f (RG)

Fig. 5: Typ. transfer characteristic

Fig. 6: Typ. gate charge characteristic

by SEMIKRON

Rev. 4 23.03.2011

SKM150GB12VG

Fig. 7: Typ. switching times vs. IC

Fig. 8: Typ. switching times vs. gate resistor RG

Fig. 9: Transient thermal impedance

Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'

Fig. 11: CAL diode peak reverse recovery current

Fig. 12: Typ. CAL diode peak reverse recovery charge

Rev. 4 23.03.2011

by SEMIKRON

SKM150GB12VG

SEMITRANS 3

GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.

by SEMIKRON

Rev. 4 23.03.2011