# Diseinu eta Simulazio Elektronikoa

PRACTICA DE AULA 2009-04-27 Etapas de salida

NOTA: despreciar las corrientes de base
ANÁLISIS EN CONTINUA

VA = 15v ⇒ VB 3 = 15 + 0.6 = 15.6v
⇒ IC 2 =

VCC − VB 3 30 −15.6
=
= 14.4mA
RCb
1

VB 2 = IC 2 ⋅ REb + VBE 2,ON = 14.4 ⋅ 0.1+ 0.6 = 2.04v

⇒ I1b =

VCC − VB 2 30 − 2.04
=
= 2.33mA
R1b
12
R=

1

VB 2 2.04
=
= 875Ω
I1b 2.33

Diseinu eta Simulazio Elektronikoa
ANÁLISIS EN ALTERNA (Calculamos

ΔvCC =

(h

)

+ 1) ⋅ RL'

fe 3,4

=

hie 3,4 + ( h fe 3,4 + 1) ⋅ R

'
L

Δv EC Re = −

h fe 2 ⋅ RL''
hie 2 + ( h fe 2 + 1) ⋅ REb

(80 + 1) ⋅ 0.1 = 0.844
1.5 + (80 + 1) ⋅ 0.1

=−

RL'' = RCb RI CC =

150 ⋅ 0.9
= −7.25
3.5 + (150 + 1) ⋅ 0.1

1⋅ 9.6
= 0.9K
1+ 9.6

RI CC = hie 3,4 + ( h fe 3,4 + 1) ⋅ RL' = 1.5 + (80 + 1) ⋅ 0.1 = 9.6K

Δv EC = −

h fe1 ⋅ RL'''
300 ⋅ 0.438
=−
= −13.14
hie1
10

RL''' = RC R1b R RI ECRe =

1
= 438Ω
1 1
1
1
+ +
+
1 12 0.875 18.6

RI EC = hie 2 + ( h fe 2 + 1) ⋅ REb = 3.5 + (150 + 1) ⋅ 0.1 = 18.6K
Re

Δv = Δv EC ⋅ Δv EC Re ⋅ ΔvCC = (−13.14 ) ⋅ (−7.25) ⋅ (0.844 ) = 80.4

2

Diseinu eta Simulazio Elektronikoa

Rent = RI EC = 2.64K

RI EC = R1 R2 hie1 =

1
= 2.64K
1
1 1
+ +
5.6 10 10

Rsal = ROCC = 31Ω

ROCC =

hie 3,4 + RS' 1.5 + 1
=
= 31Ω
h fe 3,4 + 1 80 + 1

RS' = RCb ROECRe = RCb ∞ = RCb = 1K

3