BTA06 T/D/S/A BTB06 T/D/S/A

SENSITIVE GATE TRIACS

. . .

FEATURES VERY LOW IGT = 10mA max LOW IH = 15mA max BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734)

DESCRIPTION The BTA/BTB06 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2 t value Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/µs Parameter BTA BTB

A1 A2

G

TO220AB (Plastic)

Value Tc = 85°C Tc = 90°C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive 63 60 18 10 50 - 40 to + 150 - 40 to + 110 260 6

Unit A

ITSM

A

I2t dI/dt

A2s A/µs

Tstg Tj Tl

Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 400 T/D/S/A

°C °C °C

Symbol

BTA / BTB06600 T/D/S/A 600 700 T/D/S/A 700

Unit

VDRM VRRM

Repetitive peak off-state voltage Tj = 110°C

400

V

March 1995

1/5

2 IGT Linear slope VD=67%VDRM gate open (dI/dt)c = 2.75 10 5 10 5 V/µs V/µs 5 5 Suffix D 5 10 1.65 0.2 2 20 40 25 20 40 25 mA V mA S 10 10 A 10 25 V V µs mA mA Unit VD=VDRM RL=3.4 °C/W Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).5A/µs IG= 1.4 3. 2/5 .3kΩ VD=VDRM IG = 40mA dIG/dt = 0.BTA06 T/D/S/A / BTB06 T/D/S/A THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360 ° conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 4.01 0.5 0. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant T IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III IV VGT VGD tgt IL VD=12V (DC) RL=33Ω Tj=25°C Tj=110°C Tj=25°C Tj=25°C I-II-III-IV I-II-III-IV I-II-III-IV I-III-IV II IH * VTM * IDRM IRRM dV/dt * IT= 100mA gate open ITM = 8.5A tp= 380µs VDRM VRRM Rated Rated up to Tj=25°C Tj=25°C Tj=25°C Tj=110°C Tj=110°C MAX MAX MAX MAX TYP MIN Tj=110°C TYP 10 1 10 1 MAX MAX MAX MIN TYP TYP 10 20 15 10 20 15 1.7A/ms (dV/dt)c * * For either polarity of electrode A2 voltage with reference to electrode A1.3 2.2 3.

1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz).2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA).BTA06 T/D/S/A / BTB06 T/D/S/A ORDERING INFORMATION Package IT(RMS) A BTA (Insulated) 6 VDRM / VRRM V 400 600 700 BTB (Uninsulated) 400 600 700 T X X X X X X Sensitivity Specification D X X X X X X S X X X X X X A X X X X X X Fig. Fig. (Curves are cut off by (dI/dt)c limitation) Fig. Fig. 3/5 .3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB).4 : RMS on-state current versus case temperature.

5 : Relative vatiation of thermal impedance versus pulse duration.7 : Non Repetitive surge peak on-state current versus number of cycles.BTA06 T/D/S/A / BTB06 T/D/S/A Fig. Fig. Fig. 4/5 .6 : Relative variation of gate trigger current and holding current versus junction temperature.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 Fig.1 Zt h(j-a) tp( s) 0. Fig. Zth/Rth 1 Zt h( j-c) 0.9 : On-state characteristics (maximum values). and corresponding value of I2t.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms.

A.48 4.70 14.Sweden .158 1.119 4. This publication supersedes and replaces all information previously supplied. 10. Max.013 0.Thailand .413 14.Taiwan .Malaysia .Germany .025 0.55 4.20 10. Min.58 5.54 3.64 0.U.BTA06 T/D/S/A / BTB06 T/D/S/A PACKAGE MECHANICAL DATA TO220AB Plastic REF.85 6.Morocco .Spain .100 0.50 0.140 0.107 4. However.65 0.23 15.Printed in Italy .230 0.500 0.048 0.Singapore .Switzerland .176 0.85 0.026 2.70 0.045 0.87 0.N.401 0.18 0.Korea .United Kingdom .625 12.038 Cooling method : C Marking : type number Weight : 2.39 0.22 0.Malta .15 1.Japan .00 0. No license is granted by implication or otherwise under any patent or patent rights of SGS-TH OMSON Microelectronics.3 g Recommended torque value : 0.055 0.France .178 2.Italy .N.031 0. © 1995 SGS-THOMSON Microelectronics .8 m.All rights reserved.S.579 5.35 0. 5/5 .082 0.82 0.190 3.Brazil .70 0.560 0.80 1. A G I D B J H F O P L C M = N = A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia . Information furnished is believed to be accurate and reliable.58 0.Hong Kong . SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. Max.96 0.10 2.The Netherlands .00 0.50 0.270 4. Specifications mentioned in this publication are subject to change without notice.20 0. Maximum torque value : 1 m.