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Philips Semiconductors

Product specification

Thyristors

BT152B series

GENERAL DESCRIPTION
Glass passivated thyristors in a plastic envelope suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

QUICK REFERENCE DATA


SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT152BRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 400R 450 13 20 200 600R 650 13 20 200 800R 800 13 20 200 V A A A

PINNING - SOT404
PIN 1 2 3 mb DESCRIPTION cathode anode gate anode

PIN CONFIGURATION
mb

SYMBOL

a
2 1 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(AV) IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current half sine wave; Tmb 103 C all conduction angles half sine wave; Tj = 25 C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 50 A; IG = 0.2 A; dIG/dt = 0.2 A/s CONDITIONS MIN. -40 MAX. -400R -600R -800R 4501 6501 800 13 20 200 220 200 200 5 5 5 20 0.5 150 125 UNIT V A A A A A2s A/s A V V W W C C

I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. September 1997 1 Rev 1.100

Philips Semiconductors

Product specification

Thyristors

BT152B series

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 55 MAX. 1.1 UNIT K/W K/W Thermal resistance junction to mounting base Thermal resistance minimum footprint, FR4 board junction to ambient

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 40 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 C VD = VDRM(max); VR = VRRM(max); Tj = 125 C MIN. 0.25 TYP. 3 25 15 1.4 0.6 0.4 0.2 MAX. 32 80 60 1.75 1.5 1.0 UNIT mA mA mA V V V mA

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt tq PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform gate open circuit VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s; ITM = 40 A VD = 67% VDRM(max); Tj = 125 C; ITM = 50 A; VR = 25 V; dITM/dt = 30 A/s; dVD/dt = 50 V/s; RGK = 100 MIN. 200 TYP. 300 2 70 MAX. UNIT V/s s s

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Thyristors

BT152B series

25

Ptot / W
conduction angle degrees 30 60 90 120 180 form factor

BT152
a
4 2.8 2.2 1.9 1.57

Tmb(max) / C

97.5

250

ITSM / A

BT152 IT ITSM

20

a = 1.57 1.9 2.2 2.8 4

103

200

time T Tj initial = 25 C max

15

108.5

150

10

114

100

119.5

50

5 IT(AV) / A

10

125 15

10 100 Number of half cycles at 50Hz

1000

Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV).
ITSM / A dI T /dt limit BT152

Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

1000

50

IT(RMS) / A

BT152

40

30
100

20
IT T I TSM time

10

Tj initial = 25 C max 10 10us 100us T/s 1ms 10ms

0 0.01

0.1 1 surge duration / s

10

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 10ms.
BT152

Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 103C.
VGT(Tj) VGT(25 C)

25

IT(RMS) / A

1.6
103 C

BT151

20

1.4 1.2 1

15

10

0.8
5

0.6
0 50 Tmb / C 100 150

0 -50

0.4 -50

50 Tj / C

100

150

Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Thyristors

BT152B series

3 2.5 2 1.5

IGT(Tj) IGT(25 C)

BT152

50

IT / A Tj = 125 C Tj = 25 C

BT152

40

Vo = 1.12 V Rs = 0.015 ohms

30

typ

max

20

1 0.5 0 -50
10

50 Tj / C

100

150

0.5

1 VT / V

1.5

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IL(Tj) IL(25 C)

Fig.10. Typical and maximum on-state characteristic.

3 2.5 2 1.5 1

BT145

10

Zth j-mb (K/W)

BT152

0.1
P D tp

0.01

0.5 0 -50
0.001 10us 0.1ms 1ms 10ms tp / s 0.1s 1s

50 Tj / C

100

150

10s

Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj.
IH(Tj) IH(25 C)

Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp.
dVD/dt (V/us)

3 2.5

BT152

10000

RGK = 100 Ohms

2 1.5 1 0.5 0 -50

1000
gate open circuit

100

50 Tj / C

100

150

10

50 Tj / C

100

150

Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj.

Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Thyristors

BT152B series

MECHANICAL DATA
Dimensions in mm Net Mass: 1.4 g
10.3 max 4.5 max 1.4 max

11 max 15.4

2.5 0.85 max (x2) 2.54 (x2)

0.5

Fig.13. SOT404 : centre pin connected to mounting base.


Notes 1. Epoxy meets UL94 V0 at 1/8".

MOUNTING INSTRUCTIONS
Dimensions in mm
11.5

9.0

17.5 2.0

3.8

5.08

Fig.14. SOT404 : minimum pad sizes for surface mounting.


Notes 1. Plastic meets UL94 V0 at 1/8".

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Thyristors

BT152B series

DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

LIFE SUPPORT APPLICATIONS


These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

September 1997

Rev 1.100