MMSD914 Small Signal Diode

February 2005

MMSD914
Small Signal Diode

SOD123
COLOR BAND DENOTES CATHODE TOP MARKING: 5D

Absolute Maximum Ratings *
Symbol
VRRM IF(AV) IFSM

Ta = 25°C unless otherwise noted

Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature

Value
100 200 1.0 2.0 -55 to +150 150

Unit
V mA A A °C °C

TSTG TJ

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RθJA Power Dissipation Thermal Resistance, Junction to Ambient
TC = 25°C unless otherwise noted

Parameter

Value
400 312

Unit
mW °C/W

Electrical Characteristics
Symbol
VR VF IR

Parameter
Breakdown Voltage Forward Voltage Reverse Leakage IR = 5.0µA IR = 100µA IF = 10mA

Conditions

Min.
75 100

Max.

Units
V V

1.0 25 50 5.0 4.0 4.0 2.5

V nA µA µA pF ns V

VR = 20V VR = 20V, TA = 150°C VR = 75V VR = 0V, f = 1.0MHz IF = 10mA, VR = 6.0V, IRR = 1.0mA, RL = 100Ω IF = 50mA, Peak square wave pulse width = 0.1µS, 5kHz - 100kHz rep rate

CT trr VF(peak)

Total Capacitance Reverse Recovery Time Peak Forward Recovery Voltage

©2005 Fairchild Semiconductor Corporation

1

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MMSD914 Rev. C

MMSD914 Small Signal Diode

Typical Characteristics

4.0

400

Ta= 25 °C

Reverse Recovery Time [nS]

3.5
300

3.0

Current [mA]

2.5

200

IF

(AV

)

-A V

ER

AG

2.0

ER E

CT

100

IF IE

DC U

RR

1.5
0

EN

TmA
150

1.0 10 20 30 40 50 60

0

50

100

Reverse Current [mA]

Ambient Temperature, T A [ ° C]

Figure 7. Reverse Recovery Time vs Reverse Current TRR - IR 10 mA vs 60 mA

Figure 8. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA)

500

Power Dissipation, P [mW ] D

400

DO-35 Pkg
300

SOT-23 Pkg
200

100

0 0 50 100 150 200

Average T em perature, I O [ ° C ]

Figure 9. Power Derating Curve

MMSD914 Small Signal Diode

Typical Characteristics

150

Ta= 25 °C

300

Ta= 25 ° C

Reverse Voltage, V R [V]

Reverse Current, IR [nA]
1 2 3 5 10 20 30 50 100

140

250

200

130

150

120

100

50

110

0

Reverse Current, IR [uA]

10

20

30

50

70

100

Reverse Voltage, V R [V]

Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100uA

Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100 V

Ta= 25 °C
450 700

Ta= 25 ° C

Forward Voltage, VF [mV]

Forward Voltage, VF [mV]
1 2 3 5 10 20 30 50 100

650

400

600

350

550

300

500

250 450 0.1 0.2 0.3 0.5 1 2 3 5 10

Forward Current, IF [uA]

Forward Current, IF [mA]

Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 uA

Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA
1.3

Ta= 25 ° C

Ta= 25 ° C

Forward Voltage, VF [V]

Total Capacitance [pF]
10 20 30 50 100 200 300 500

1.4

1.2

1.2

1.0

1.1

0.8

0.6

1.0 0 2 4 6 8 10 12 14

Forw ard C urrent, I F [m A ]

R everse V oltage [V ]

Figure 5. Forward Voltage vs Forward Current VF - 10 - 800 mA

Figure 6. Total Capacitance vs Reverse Voltage

MMSD914 Small Signal Diode

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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

Rev. I15

2 MMSD914 Rev. C

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