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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3918

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION
The 2SK3918 is N-channel MOS FET device that
www.DataSheet4U.com

ORDERING INFORMATION
PART NUMBER 2SK3918 2SK3918-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK)

features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

FEATURES
• Low on-state resistance RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low Ciss: Ciss = 1300 pF TYP. • 5 V drive available

(TO-251)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1

VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg

25 ±20 ±48 ±192 29 1.0 150 −55 to +150 22 48

V V A A W W °C °C A mJ

(TO-252)

Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2

IAS EAS

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D17077EJ3V0DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan

The mark

shows major revised points.

2004

MAX. VGS = 0 V di/dt = 100 A/µs 28 5 10 0.2SK3918 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 25 V.DataSheet4U. L VDD PG. 10 ±100 UNIT µA nA V S 2. RG = 25 Ω PG. ID = 24 A VGS = 10 V RG = 10 Ω MIN.0 Drain to Source On-state Resistance 7.0 V. ID = 12 A VGS = 10 V. 50 Ω RL VDD 2 Data Sheet D17077EJ3V0DS .2 mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance www.5 12 5.T.U. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.0 6 2. ID = 12 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 12.98 27 15 Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.5 V. VDS = 0 V VDS = 10 V.U.T.9 11 1300 310 220 13 14 38 14 3. ID = 1 mA VDS = 10 V. VGS = 0 V IF = 48 A. IG = 2 mA PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D. ID = 24 A VGS = 5.U. VGS = 0 V VGS = ±20 V. TYP.T.com Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 20 V VGS = 10 V ID = 48 A IF = 48 A.5 22.

Drain Current .Transient Thermal Resistance .V TRANSIENT THERMAL RESISTANCE vs.1 Single pulse 0. PULSE WIDTH 1000 rth(t) .°C www.s 10 100 1000 Data Sheet D17077EJ3V0DS 3 . CASE TEMPERATURE 120 PT .DataSheet4U.Pulse Width .1 1 10 100 VDS .2SK3918 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT .Case Temperature .Percentage of Rated Power .1 0.Case Temperature .31°C/W 1 0.W 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 100 80 60 40 20 0 TC .A 100 ID(DC) PW = 100 µs 10 RDS(on) Limited (at VGS = 10 V) 1 ms 1 Power Dissipation Limited 10 ms TC = 25°C Single pulse 0.°C FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) ID .Drain to Source Voltage .Total Power Dissipation .°C/W Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 4.com 0 25 50 75 100 125 150 175 TC .% TOTAL POWER DISSIPATION vs.01 100 µ 1m 10 m 100 m 1 PW .

1 1 10 100 ID .Channel Temperature . GATE TO SOURCE VOLTAGE 20 Pulsed 15 Pulsed 15 VGS = 5.V 100 VDS = 10 V ID = 1 mA 3 10 Tch = −55°C 25°C 75°C 125°C 150°C 2 1 VDS = 10 V Pulsed 0.mΩ RDS(on) . CHANNEL TEMPERATURE | yfs | .com VDS = 10 V Pulsed 0 GATE CUT-OFF VOLTAGE vs.Drain to Source On-state Resistance .1 0.0 V ID .A 1 0 -100 -50 0 50 100 150 200 Tch .A 1000 100 10 1 0.S FORWARD TRANSFER ADMITTANCE vs.V 4 Data Sheet D17077EJ3V0DS .0 V 10 10 V 5 10 ID = 24 A 5 0 1 10 100 1000 ID .DataSheet4U.Drain to Source Voltage .A Tch = −55°C 25°C 75°C 125°C 150°C www. DRAIN CURRENT 4 VGS(off) .V VGS .V 150 100 50 5. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 200 VGS = 10 V ID .mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs.Gate to Source Voltage .°C RDS(on) .Gate to Source Voltage .Drain Current .Drain Current .Gate Cut-off Voltage .Forward Transfer Admittance .01 0 1 2 3 0 1 2 3 4 5 6 VDS .Drain Current .Drain to Source On-state Resistance . DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs.1 Pulsed 0.2SK3918 DRAIN CURRENT vs.A 0 0 5 10 15 20 VGS .Drain Current .

mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs.1 1 10 100 ID . DRAIN TO SOURCE VOLTAGE 15 Ciss.Reverse Recovery Time .Channel Temperature .Drain to Source Voltage .ns 30 25 20 15 10 5 0 100 tf 10 td(off) tr td(on) VDD = 20 V 12.ns 100 10 1 0.Gate to Source Voltage .Drain Current .V VDD =12. tf .5 VF(S-D) .DataSheet4U.Diode Forward Current .Switching Time .1 1 Crss 10 100 www.V td(on).Diode Forward Current .V 1 1 10 IF .1 di/dt = 100 A/µs VGS = 0 V 100 0V 10 Pulsed 0.Drain to Source Voltage .nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs.A 100 Data Sheet D17077EJ3V0DS 5 VGS . td(off).2SK3918 RDS(on) . DIODE FORWARD CURRENT 1000 IF .V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 VDS .Drain to Source On-state Resistance . Coss.01 0.A 1000 VGS = 10 V trr .°C VDS .A 0 10 20 30 QG .Gate Charge . CHANNEL TEMPERATURE CAPACITANCE vs.01 0 0.5 V VGS = 10 V RG = 10 Ω ID = 48 A. Crss . tr.Source to Drain Voltage .5 V 5V VGS 10 8 6 4 VDS 2 0 1 0. 42 A (at VDD = 5 V) 12 .pF 10000 10 VGS = 10 V Ciss 1000 5 ID = 24 A Pulsed 0 -100 -50 0 50 100 150 200 Coss VGS = 0 V f = 1 MHz 100 0.com Tch .5 1 1.Capacitance .

01 www.A Energy Derating Factor .2SK3918 SINGLE AVALANCHE CURRENT vs.1 1 10 IAS = 22 A EAS = 48 mJ VDD = 12.% 120 100 80 60 40 20 0 0.Single Avalanche Current .com 25 50 75 100 125 150 L .DataSheet4U.5 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 22 A 10 VDD = 12.mH Starting Tch . INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 IAS .Inductive Load .5 V RG = 25 Ω VGS = 20 → 0 V Starting Tch= 25°C 1 0.Starting Channel Temperature .°C 6 Data Sheet D17077EJ3V0DS .

(9.2 10.8 ±0.1 0.5±0.3 MIN. Fin (Drain) 0. Drain 3. 6.3 MIN.7 TYP. No Plating 1 0.3 TYP.2SK3918 PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3) Mold Area 0.com 9.4 MAX. 6. 4 4.2 6.3 2. when exposed to this device.1 0.3 1. www.3 TYP. 4. 1.0 MIN.1 1.14 MAX. and quickly dissipate it once.3 TYP. 2) TO-252 (MP-3ZK) 2.5 ±0.1±0.1 1.2 5.1 ±0. 1.51 MIN. when it has occurred.5±0. Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Source Remark Strong electric field. can cause destruction of the gate oxide and ultimately degrade the device operation. Gate 2. Gate 2.1 6.1 TYP.0 TYP.14 MAX. 4 2.3±0.6 ±0.76 ±0. Source 4. 0. 2. Steps must be taken to stop generation of static electricity as much as possible. Source 4.0 MIN. 4.8 TYP.2 1.5±0.1 TYP.1 2.0 1.) 16.02 TYP.8 2 3 No Plating 0 to 0. Drain 3.2 5.3 TYP.25 0.5 ±0.12 2. 4.DataSheet4U.76±0. 0.1 No Plating 1 2 3 1.3 ±0. Data Sheet D17077EJ3V0DS 7 . 0.

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