1. The strength of electric eld E on charge q for a force of F is, (a) mq (b) q/F (c) F/q (d) mF 2.

An electron in an electric eld travelled a distance of 2 m and falls through 6V, then the transit time of electron is given by (a) 28 1012 sec. (b) 2.75 1012 sec. (c) 2.75 106 sec. (d) 275 107 sec. 3. An electron starts at rest on one plate of a parallel plate capacitor , whose plates are 5cm apart. The applied voltage is zero at the instant the electron is released and it increases linearly form 0 to 10v in 0.1 msec. With what speed will the electron strike the positive plate? (a) 1.58 m/sec (b) 1.8 106 m/sec (c) 1.58 106 m/sec (d) 1.58 104 m/sec 4. Use of Aquadag coating on CRO screen is to collect outer side (highly deected) electrons, and return them to (a) cathode (b) Grid (c) Anode (d) Electron gun 5. The signal to observed on the screen of a CRO is applied to (a) Focusing anodes (b) Y - Plates (c) Accelerating anodes (d) X - Plates 6. The pre-accelerating anode and post accelerating anode are maintained at potential with respect to focussing anode (a) low (b) zero (c) Verylow (d) high 7. In C.R.O. no. of pairs of deection plates are (a) 1 (b) 6 (c) 2 (d) 4 8. Electrostatic Deection sensitivity is dened as (a) Deection on screen/ deecting voltage (b) Deection on screen * deecting voltage (c) Deection voltage + Deection on screen (d) Deection voltage / deection on screen 9. When two sinusoidal voltages are given to two sets of deecting plates then distinctive patterns obtained on CRO screen are called as (a) Lissajous gures (b) Horizontal gures (c) Vertical gures (d) Noise gures 10. The position of accelerating anode in CRT is (a) Between grid and Foussing anode (b) Between Focusing anode & vertical plate (c) Between cathode and grid. (d) Between vertical plate & Horizontal plate 11. A n-type material has (a) electrons as majority carriers (b) both positive and negative charge carriers are equal in number (c) holes as majority carriers (d) mobile positive ions 12. The intrinsic concentration nI is a function of (a) Temperature (b) Acceptor ions (c) humidity (d) Pressure 13. Determine the resistivity of pure silicon at 3000 K. assuming that the concentration of carriers at 3000 K is 1.6 1010 / Cm3 for silicon, mobilities are n = 1500 cm2 /V-Sec. p = 500 cm2 /V -sec. (a) 185,300 -Cm (b) 193,000 -Cm (c) 195,300 -Cm (d) 195,000 -Cm 14. The current in the circuit of gure14 is to be 10mA with VAA = 1.5V. Determine the value of R given that the diode is represented by V = 0.5V and Rf = 50

Figure 14 (a) 100 (b) 150 (c) 50 (d) 5 15. For the step graded junction diode incremental depletion capacitor CT is (a) ACO (1 (b) ACO (1 (c) ACO (1 (d) ACO (1
VD 1/2 ) VO VD 1/3 ) VO VD 1/2 ) VO VD 1/3 ) VO

16. The velocity of the electron is 106 m/s2 nd its mobility( m2 /v.s)if the electric eld is 100v/m (a) 108 (b) 104 (c) 104 (d) 102 17. In a forward biased PN diodes the injected hole current in the n - region is proportional to (a) Q (b) Q3 (c) Q2 (d) 1/Q 18. In N type material, the concentration of donor atom is given by (a) NV e(Ec EF )/kT (b) NC e(Ec EF )/kT (c) ND e(EF EC )/kT (d) NC NV e(EF EC ) /kT 19. In a tunnel diode, impurity concentration is of the order of (a) 1 in 107 (b) 1 in 103 (c) 1 in 105 (d) 1 in 109 20. The equivalent circuit of varactor diode is (a) Shown in gure20a

Figure 20a (b) Shown in gure20b

Figure 20b (c) Shown in gure20c

Figure 20c (d) Shown in gure20d

Figure 20d