Lab Report on P-N Junction Diode Fabrication of 1st Semester of M-Tech in VLSI & Microelectronics

FABRICATION AND CHARACTERIATION OF P-N JUNCTION DIODE.

INTRODUCTION Most semiconductor devices contain at least one junction between P type and N type. Material (sometimes metal semiconductor). This P-N junctions are the fundamental to the performance of function such as rectification and switching in electronic circuits. Here the discussion is about how the P-N junction diodes are made. The technology of junction fabrication is a broad subject which includes the accumulated knowledge and experience of many research and manufacturing groups forming junctions and making contacts to them in mountings suitable for device. Impurities of one type may be introduced into regions of a crystal which was grown by doping of the opposite type. In this case the doping is changed at the junction there are no gross changes in the latice structure itself. Dependind upon the manufacturing process There are many types of junctions such as i) gross junction ii) alloyed junction iii) diffused junctions. Among these junctions we made only diffused junction. The junction is formed by different technology such as (i) diffusion (ii) ion implantation (iii) chemical vapor deposition (CVD) (iv) Molecular beam epitaxy. Among these techniques we have used only diffusion technology.

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k) The vaccume coating unit : The vaccume coating unit with 5 X 10-6 mm of Hg Pr. f) De–ionized water plant : De–ionized water plant has been required for production of 18 MΩ water using doubled distilled water as the input. p) Others essential items : Some other general purpose things is requires such as tweezer. i) Masks : Masks is required to maintain appropriate size of the device. n) Temperature controlled heater :A chemical bench temperature controlled heater is required o) Voltmeter and Ammeter : voltmeter and ammeter is required for device performance measurement. valves and gas flow control have been used.type dopent. c) Oxygen and Nitrogen Gas :Highly pure oxygen and nitrogen gas together with cylinders. Wafers of 4 inch diameter and 350 µm thickness with resistivity 0.5 Ωcm orientation <100> is given for Semiconductor Diode Fabrication. d) Bubbler : A water bubbler attach with the gas lines for wet gas delivery is used. Safety Goggles. -2- . Photoresist Spinner & Baking furnace : A mask aligner and photoresist spinner and baking furnace is required for photo-lithography. e) Boron Nitride cakes : Boron Nitride cakes has been required for P. j) Ultra-Sonic vibrator : The ultra-sonic vibratior is required for cleaning purpose. b) The TemPress diffusion Furnace: The diffusion furnace has been fitted with quartz tubes in the stacks. l) Dryer : A dryer is required. The temperature rise and fall upto 1200 OC have been tested using the microprocessor based temperature controller. h) A diamond cutter : A Diamond cutter is required for chip seperation.Lab Report on P-N Junction Diode Fabrication of 1st Semester of M-Tech in VLSI & Microelectronics BASIC MATERIALS. vaccume with electron beam evaporation facility is used. CHEMICALS AND EQUIPMENTS FOR THE PROCESS :a) Silicon Wafer :appropriately designed silicon wafers have been procured from abroad. m) Mask Aligner . g) Chemicals :Other necessary electronic grade chemicals is required. Covering dress for lab etc.

E) Photo-lithography. D) Oxidation. F) Etching of SiO2 Layer G) Activation of Boron Nitride Predeposition. Oxidation Removal of Borosilicate glass. C) Cleaning of silicon wafer.Lab Report on P-N Junction Diode Fabrication of 1st Semester of M-Tech in VLSI & Microelectronics THE VARIOUS PROCESS STEPS FOR REALIZATION OF P-N JUNCTION DIODES ARE GIVEN BELOW :A) Testing of dopant by hot probe method. At first the probes of the voltmeter is touched on the silicon surface. 1 : (Hot probe testing to determine the wafer is P type or N type) -3- . H) Metalization. If the reading is positive then the wafer is of n type and if the voltage is negative then the wafer is P type. I) Photolithography J) Device separation K) Soldering or bonding for lead contact DETAILS STEPS FOR THE FABRICATION OF THE P-N JUNCTION DIODE. A ) Testing the type of dopant by hot probe methode. B) Etching and polishing of Silicon wafer. In our case the voltmeter shows positive reading and so it is concluded that the silicon wafer is of N-type. Fig. Then the positive terminal of the voltmeter is heated (with a soldering iron) and the reading is checked.

3)Removing inorganic compound :The wafer is then transferred in a beaker containing solution of H2SO4 : H2O2 at ratio 1:1 and is heated at 85 OC till the reaction stop then cleaned into DI water to remove inorganic compounds.Lab Report on P-N Junction Diode Fabrication of 1st Semester of M-Tech in VLSI & Microelectronics B) Chemical Etching or Polishing The given n type silicon wafer is a unpolished one. which are present on the semiconductor surface which detoriate the performance of the device. Here we have done the acid cleaning process. i) Acid cleaning process. 6)Removing Alkaline Organic Compound :The wafer is then immersed in a beaker containing solution of H2O : H2O2 : HCl at ratio 6:1:1 and heated at 70OC for 10 minute and then cleaned into DI water to remove alkaline organic compound. -4- . So polishing is required and is done by 20 % NAOH solution at temperature 85O C for 3 to 5 minutes. The furnace is maintained at a temp of 1000 OC in O2 ambient with gas flow rate 1 Lit/Minute for dry oxidation. 7)Rinsing and Drying :The wafer is rinsed in running DI water. 2)Removing Oil and Grease:The wafer is then transferred to a beaker containing hot (85 OC ) Acetone and again boiled for 5 minutes and followed by ultrasonic cleaning for 3 minute. 5)Removing Acidic Organic Compound :The wafer is then immersed in a beaker containing solution of H2O : H2O2 : NH4OH at ratio 5:1:1 and is heated at 70OC for 10 minutes and then passed into cold DI water to remove acidic organic compound. For wet oxidation the bubbler temp is maintained at 90 OC. The quartz boat with silicon wafer is then pushed very gently into the middle zone of the pre-heated (1000 OC ) nitrogen ambient furnace. The wafer is then dried with a wafer dryer. The cleaning process is done by i) Acid cleaning process and ii) dry plasma cleaning process. Now the wafer is ready to oxidation. C) Wafer Cleaning Wafer cleaning is a very important step in device fabrication process because of the variety of organic and inorganic contaminants of unknown origin. The oxidation process is carried out by three step oxidation first dry oxidation then Wet oxidation and then again dry oxidation. 4)Removing Silicon Di Oxide Layer : Then the wafer is dipped into 10% HF solution for for 2 to 3 minutes and again cleaned into DI water to remove SiO2 layer. The process followed by 15 min dry oxidation then 30 minute wet oxidation and again 15 minute dry oxidation. 1)Removing Dust Particle: The wafer is kept in a clean beaker containing hot (85 OC ) Tri-Chloro-Ethelyn (TCE) and boiled for 5 minutes followed by 3 minute ultrasonic cleaning to remove dust particle. D) Oxidation The cleaned silicon wafer then placed in a quartz boat between two wafer zone.

(iv) Development of Photoresist : After exposure the wafer is developed and the image of the device is obtained. The BN wafer is activated in oxygen (flow rate 1 lit/min ambient at 1000 OC) for 30 minutes. i) Activation : Solid source of boron i. e. So for formation of diffusion area we used a bright field mask. (iii) UV Expose : The wafer is exposed by UV source with the help of mask aligner for 8 sec with appropriate mask. (v) Post Baking : After development the photoresist baked at 120 OC for 20 minute for better adhesion of the resist. (i) Coating of Photoresist by spining process : Vaccume holds the wafer on spinner and a few drops of negative photoresist given on the wafer.Lab Report on P-N Junction Diode Fabrication of 1st Semester of M-Tech in VLSI & Microelectronics Temperature Controller. 4 BN + 3O2 = 2 B2O3 + 2 N2 -5- . 2 Three Zone Furnace used for Oxidation and Deposition. Speed of the Spinner is maintained at 4000 RPM for formation of very thin layer (5μm ) of photoresist for uniform coating and better adhetion. E) Photolithography Photolithography is a process by which we get the proper structure of the device on the wafer. G) Diffusion : As the given wafer is N type so we need to diffuse P type impurity into the wafer to create P-N junction and we take Boron (P type) impurity for diffusion. The entire diffusion is consisting the following process. Photolithography process is done by some process steps as follows. (ii) Prebaking : The wafer coated with photoresist is then baked for 20 minute at 90 OC for better adhesion of the photoresist with wafer surface. During activation a skin of B2O3 is formed on the surface of BN wafer according to the following reaction. We use negative photoresist. boron nitride (BN) is placed on a quartz boat and is very slowly pushed to the middle region of the furnace. (3 Zone) Heating Coils Flue Gas Wafer on Quartz Boat Oxygen Gas Bubbler Fig . F) Etching of SiO2 layer The wafer is then dipped in 10% HF solution for 3 minute and the exposed SiO2 layer is etched away. (vi) Hard Photoresist removal : Hard photoresist is removed by acetone.

The vaccume level achieved upto 5 x 10-6 mm of Hg with the help of rotary (RP) and diffusion pump (DP). (iv) plasma technique when both are gas. Diffusion of boron was performed according to a reaction between B2O3 and silicon is 2B2O3+ 3 Si = 3 SiO2 + 4B iii) Oxidation : The furnace maintained at a temperature of 700 OC in the O2 ambient with gas flow rate 1 lit/min with bubbler temp 90 OC . -6- . In oxidation step the wafer is placed on a quartz boat inside a quartz tube at temperature 700 OC and wet oxygen is passed through the tube for 10 – 15 minute. H )Metalization Metalization is one of the most important steps of device fabrication. Now it is ready for metalization. Better adhesion gives always better performance of the fabricated device. Metalization has done by different techniques such as (i) Thermal Evaporation for low melting point of metal (ii) Electron beam technique when melting point of metal is high. The substrate is placed on the substrate holder. Presence of this layer prevents proper metalic contact with the chips. (iii) RF sputtering when metal oxide or bi-metals are used. Pre-deposition of boron was carried out for 1 hour. After oxidation the borosilicate glass layer becomes softend which can be easily removed from the surface by low concentrate (10%) HF solution treatment. Boron was transported to the silicon surface by the inert carrier gas (here nitrogen) at the diffusion temperature. Here the Electron beam technique is used. maintained at a temperature of 1000 OC in N2 ambient.Lab Report on P-N Junction Diode Fabrication of 1st Semester of M-Tech in VLSI & Microelectronics ii) Pre deposition of Boron : The photolithographic silicon wafer and the activated BN are then placed in quartz boat side by side within a spacing of 2 mm in between them. High vaccume region is required for metalization to achieve grater mean free path from source of metal (which to be deposited) to the substrate (wafer have to be metalised) because to avoid the collisions with other gas particles. iv) Borosilicate Glass Removal : During predeposition and oxidation process at temp 1000 OC the Boro-Silicate-Glass (BSG) becomes very hard and acts as insulating layer. The quartz boat and the silicon wafer is then pushed very gently into the middle zone of the furnace. The diffused silicon wafer pushed into the furnace for 10 to 15 minutes.

Lab Report on P-N Junction Diode Fabrication of 1st Semester of M-Tech in VLSI & Microelectronics The schematic diagram of Vaccume coating unit is given below: Fig. baking valve open. Silicon can capture air particles. RP off. DP off. when vaccume reached at 10-2 torr then backing closed. ii)Rotary pump (RP) on. Diffussion pump (DP) on. iv)Again backing valve opened. After deposition (Here aluminium deposition for ohmic contact) power switch off. baffel closed. viii)Backing closed. -7- . v)Water circulation on . when vaccume level 10-2 Torr then roughing valve closed. 3 (Vaccume coating unit) Density of silicon is very low so it condenses easily and also evaporated quickly. vii)After 20 minutes water circulation off. iii)Roughing valve open. Operation Steps of vaccume coating unit: i)Loading of the wafer. vi)Then power switch on . Baffel open and achieved high vaccume.

In our case the diamond scriber is used for the separation of P-N junction diode. -8- . Here the soldering technique is used. K) Lead contact : It is done with the help of bonding technique or otherwise soldering is required. J) Device-separation : It is the process by which we can separate single device from the wafer (single P-N junction diode from the wafer of many P-N junction diode).Lab Report on P-N Junction Diode Fabrication of 1st Semester of M-Tech in VLSI & Microelectronics Back side metalisation: Back side of the wafer Ag metalized same as above or coating a silver paste with paint brush. Hard-photoresist removal Hard photoresist is removed by acetone. Etching Aluminum etching is done on the selective portion. After that heat treatment is required at 110 OC for 10 minute and 700 OC for 45 second. I )Photolithography Photolithography is required for device isolation many deices can be fabricated in a single wafer. A thin metallic ware is soldered on both side of the device in our case. It is done by the same process as stated earlier photolithography process. If the backside coating is silver paste then it is happened before the Al metalization because heat treatment is required for Al at 450 OC to 500 OC for 45 Second.

Aluminum 8.Using steps 2-4 each away Aluminum except in P – contact areas.Expose photoresist through mask A.Use HF etch to remove SiO2 windows.Evaporate Aluminum onto the surface. Diffused Boron 7. Fig.Lab Report on P-N Junction Diode Fabrication of 1st Semester of M-Tech in VLSI & Microelectronics PICTORIAL STEPS IN THE FABRICATION OF DIFFUSED P-N JUNCTION 1.Remove photoresist and diffuse Boron through windows in the SiO2 layer. SiO2 2. 5.4 (Operational Steps) Characterization of the fabricated P-N junction diode -9- . P hotoresist 3.Remove unexposed photoresist. UV Ray Mask 4.Oxidize the Silicon wafer.Apply a layer of photoresist. Etched out SiO2 6.

Digital Multimeter as Ammeter.10 - . I C onst. iii. (Min step 1 mV. 6 (Connection Diagram Apparatus required for measurement: i. ii. V Const ant Cur r ent Const ant Vol t age Fine Course Fig. 5 (Circuit Diagram for performance test) Connection Diagram Power C onst. (Min step 1 μA in 200 μA range) Digital Multimeter as Voltmeter. Range 200 V DC) Variable voltage source (0-40 Volt with course and fine control). .Lab Report on P-N Junction Diode Fabrication of 1st Semester of M-Tech in VLSI & Microelectronics Circuit Diagram The basic circuit diagram of the voltage current characteristic of the P-N junction diode is given below: Variable Voltage Source Ammeter A Voltmeter V Diode to be tested Fig.

77 Reverse Bias Result Voltage -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 -0.6 0.042 0.3 2.086 -0.2 0 Current -0.0215 -0.0035 0.005 0.116 -0. The polishing time should be increased for better device performance and fabrication.053 -0.06 -0.318 0. .002 0 V-I Charestics of P-N Junction Diode 12 11 10 9 8 Current in mA 7 6 5 4 3 2 1 0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 -1 0 1 2 3 4 5 6 7 8 9 10 Voltage in Volts Remarks: The device though gives reading of a diode but still this diode cannot be used for commercial application as the entire process for device fabrication needs much more attention on cleanliness.018 0.0133 -0.001 0.0075 -0.97 6.389 -0.0141 0.5 0.0027 -0.0124 0.1 0.01 0.0065 0.4 10.8 1 2 3 4 5 6 7 8 9 10 Current 0.3 0.4 0.002 0.666 1.7 0.0039 -0.68 3.5 -0.202 0.04 -0.Lab Report on P-N Junction Diode Fabrication of 1st Semester of M-Tech in VLSI & Microelectronics Results: Forward Bias Results Voltage 0.11 - .2 0.

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