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TPS601A(F

)
TOSHIBA Phototransistor Silicon NPN Epitaxial Planar

TPS601A(F)
Photoelectric Counter Position Detection Various Kinds Of Readers
Unit in mm

• • •

TO−18 metal CAN package High sensitivity. Sharp directivity. Incident light can be effectively used. : θ1/2 = ± 10° (typ.)

Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector−emitter voltage Emitter−collector voltage Collector current Collector power dissipation Collector power dissipation derating (Ta > 25°C) Operating temperature range Storage temperature range Symbol VCEO VECO IC PC ΔPC /°C Topr Tstg Rating 40 5 50 150 −1.2 −40~125 −55~150 Unit V V mA mW mW / °C °C °C

TOSHIBA

0−5A1

Weight: 0.39 g (typ.)

Pin Connection
2 1 1 . Emitter 2 . Collector

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2007-10-01

the lead should be formed at a distance of 2mm from the body of the device.TPS601A(F) Opto−Electrical Characteristics (Ta = 25°C) Characteristic Dark current Symbol ID (ICEO) Test Condition VCE = 30V. E = 0. Precaution Please be careful of the followings. standard tungsten lamp.F) Collector−emitter saturation voltage Switching time rise time fall time VCE (sat) tr tf λP θ 1 2 Min ― 100 100 200 400 ― ― ― ― ― Typ.5mm from the body of the device.F) TPS601A (C. Soldering shall be performed after lead forming. Soldering temperature: 260°C max. (Soldering portion of lead: Above 1.01 ― ― ― ― 0. Soldering time: 5s max.25 2 2 800 ±10 Max 0. 0.1mW / cm VCC = 5V.) 2. E = 0 TPS601A (F) Light current IL VCE = 3V TPS601A (A. 1.4 ― ― ― ― Unit μA μA IC = 30 μA.1mW / cm (Note) TPS601A (B.F) 2 E = 0. If the lead is formed. Product Indication Model name Monthly production lot S601A・ Production month (Jan-Dec are indicated by alphabets of A-L) Production year(last digit of A. IC = 10mA RL = 100Ω 2 (Note) V μs nm ° Peak sensitivity wavelength Half value angle Note: Color temperature = 2870K. is indicated) Letter color : Red 2 2007-10-01 .2 ― 300 600 1200 0.D.

3 VCE = 3V Ta = 25°C Color Temperature=2870K 0.) 200 100 Spectral Response (typ.TPS601A(F) Fig.1 Switching time test circuit Input TLN108(F) (GaAs LED) R RL VCC Input pulse 0 Output Output pulse 0 tr 10% tf 90% PC – Ta 160 10 2 ID – Ta (typ.1 0.1 0.) Ta = 25°C Light current IL (mA) (%) Relative sensitivity 10 2 10 5 3 50 30 10 5 3 1 0.3 1 3 30 1 400 600 800 1000 1200 Radiant incidence E (mW/cm ) Wavelength λ (nm) 3 2007-10-01 .) VCE = 30 V E=0 Allowable collector power Dissipation PC (mW) 120 Dark current ID (μA) 0 40 80 120 160 200 10 1 80 10-1 10-2 40 10-3 10-4 0 0 40 80 120 160 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IL – E 50 30 (typ.5 0.

0 0.1 0.6 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° (dB) Radiation Angle 4 0 -4 -8 -12 RL=100Ω 1kΩ -16 -20 1 500Ω 0.) (Ta = 25°C) 8 Relative input 30° 40° 50° 60° 70° 80° 90° 1. 1kΩ) 3 tf (RL=100Ω) tr (RL=100Ω) 5 1 0.3 1 tf (RL=1kΩ) 3 10 Collector current IC (mA) 4 2007-10-01 .8 0.TPS601A(F) Directional Sensitivity Characteristic (typ.) Ta=25°C Input TLN108(F) (GaAs LED) R Input pulse VCC Output 10V pulse Output td RL tr tf 90% 10% Switching time (μs) 200 100 50 30 tr (RL=10kΩ) tf (RL=10kΩ) tr (RL=1kΩ) 10 td (RL=10kΩ) td (RL=100Ω.4 0.02 0.) 12 Frequency Characteristics VCC = 5V 1200 Ta = 25℃ Light source = TLN108(F) (GaAs LED) (typ.2 0 90° 10 30 100 300 1000 Relative sensitivity Frequency f (kHz) Switching Characteristics (typ.

5 0.3 0.1 0.TPS601A(F) Relative IL – Ta 2.1mW/cm2 VCE = 3V 1.5 1 3 5 10 30 50 100 200 Distance d (mm) 5 2007-10-01 .1 1 3 5 10 30 50 100 300 500 1000 Ambient temperature Ta (°C) Distance d (mm) Coupling Characteristics With TLN108(F) 100 50 Ta =25°C (mA) 30 11.4 0 -40 0.2 0.1mW/cm2 1 0.1mW/cm d Relative light current 1.7 10 5 3 23 IE=4mW/sr Collector current IC 1 TPS601A(F) … IL = 226μA at VCE = 3V 0.) 100 50 Coupling Characteristics With TLN201(F) Ta = 25℃ 30 IE=25.5 E = 0.5mW/sr 10 5 3 TPS601A(F) using sample IL = 226μA at VCE = 3V 2 E = 0.3 d 0.6 (typ.0 E = 0.8 Collector current IC -20 0 20 40 60 80 100 (mA) 1 0.

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